P. Capper

发表

Infrared Detectors and Emitters: Materials and Devices

Peter Capper, P. Capper, C. T. Elliott, 2001 .

Bulk Crystal Growth: Methods and Materials

P. Capper, 2017 .

Measurement of CdxHgi‐xTe composition depth profiles using auger electron spectrometry on bevelled sections

P. Capper, I. Gale, J. Clegg, 1995 .

Use of Forced Mixing via the Accelerated Crucible Rotation Technique (ACRT) in Bridgman Growth of Cadmium Mercury Telluride (CMT)

P. Capper, 2008 .

Bulk growth of cadmium mercury telluride (CMT) using the Bridgman/accelerated crucible rotation technique (ACRT)

P. Capper, C. Maxey, C. Butler, 2005 .

Factors affecting the electrical characteristics of cadmium mercury telluride crystals

P. Capper, J. E. Harris, B. Bartlett, 1980 .

Arsenic diffusion effects in CdxHg1-xTe layers grown by metal-organic vapour phase epitaxy

P. Capper, I. Gale, J. Clegg, 1989 .

Narrow-Bandgap II-VI Semiconductors: Growth

P. Capper, 2017 .

Incorporation and activation of group V elements in MOVPE-grown CdxHg1-xTe

P. Capper, C. Maxey, B. C. Easton, 1989 .

Activation kinetics of the As acceptor in HgCdTe

P. Capper, D. Shaw, 2008 .

Low temperature thermal annealing effects in bulk and epitaxial CdxHg1−xTe

C. L. Jones, P. Capper, C. Maxey, 1999 .

The phase diagram of the pseudo-binary system CdTe-HgTe and the segregation of CdTe

C. L. Jones, J. Brice, P. Capper, 1986 .

The role of accelerated crucible rotation in the growth of Hg1−xCdxTe and CdTe/CdZnTe

P. Capper, 1994 .

Bridgman growth and assessment of CdTe and CdZnTe using the accelerated crucible rotation technique

C. L. Jones, P. Capper, J. E. Harris, 1993 .

Effect of process changes on the properties of CdxHg1−xTe crystals grown by Bridgman using ACRT

C. L. Jones, P. Capper, W. Coates, 1990 .

Bridgman growth of CdxHg1−xTe— A review

P. Capper, 1989 .

Fluid flows induced in tall narrow containers by A.C.R.T.

E. J. Pearce, C. L. Jones, P. Capper, 1986 .

Bridgman growth of Cdx Hg1-xTe using acrt

C. L. Jones, P. Capper, J.J.G. Gosney, 1986 .

Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials

M. Mauk, P. Capper, 2007 .

Apparatus for top-seeded growth from high temperature solutions

P. Capper, M. D'agostino, D. Elwell, 1975 .

Minority carrier lifetime in doped and undoped p-type CdxHg1-xTe

P. Capper, D. Lacklison, 1987 .

Sulphur diffusion in CdTe and the phase diagram of the CdS–CdTe pseudo-binary alloy

S. Romani, G. Conibeer, P. Capper, 1999 .

Extrinsic doping of CdxHg1−xTe— A review

P. Capper, 1989 .

Impurity segregation in CdxHg1-xTe crystals grown using ACRT

C. L. Jones, J. Roberts, P. Capper, 1988 .

Crucible rotation and crystal growth in the Czochralski geometry

P. Capper, D. Elwell, 1975 .

Appraisal of BaO/B2O3/BaF2 fluxes for the growth of yttrium aluminium garnet

P. Capper, D. Elwell, 1974 .

Progress in bulk cadmium mercury telluride over the last 25 years

P. Capper, 2015, Journal of Materials Science: Materials in Electronics.

Bulk Growth of Cadmium Mercury Telluride (CMT)

P. Capper, 2010 .

Bulk Growth of Mercury Cadmium Telluride (MCT)

P. Capper, 2010 .

Bulk growth techniques

P. Capper, 1997 .

A study of casting in the CdxHg1-xTe system

P. Capper, J. E. Harris, B. Bartlett, 1979 .

Introduction to Metalorganic Vapor Phase Epitaxy

P. Capper, S. Irvine, 2019, Metalorganic Vapor Phase Epitaxy (MOVPE).

Minority carrier lifetime in n‐type Bridgman grown Hg1−xCdxTe

C. L. Jones, R. Pratt, P. Capper, 1983 .

Epitaxial Crystal Growth: Methods and Materials

P. Capper, S. Irvine, T. Joyce, 2017 .

Intrinsic and extrinsic doping

P. Capper, 1997 .

Viscosity and density of BaO/B2O3/BaF2 fluxes and solutions

C. M. Lawrence, P. Capper, D. Elwell, 1974 .

Semiconductors, Compound—Material Properties

P. Capper, V. Swaminathan, 2003 .

Crystal growth technology : from fundamentals and simulation to large-scale production

P. Capper, H. Scheel, 2008 .

The effects of growth speed on the compositional variations in crystals of cadmium mercury telluride

P. Capper, J. E. Harris, B. Bartlett, 1979 .

Effects of annealing on the electrical properties of Cd/x/Hg/1-x/Te

C. L. Jones, P. Capper, M. Quelch, 1982 .

On the cooling rates of large‐diameter silicon crystals

P. Capper, J. Wilkes, 1978 .

The effects of heat treatment on dislocation‐free oxygen‐containing silicon crystals

P. Capper, P. Capper, A. W. Jones, 1977 .

Springer Handbook of Electronic and Photonic Materials

Safa Kasap, Peter Capper, Cyril Koughia, 2007 .

Journal of Materials Science: Materials in Electronics August 2001

Peter Capper, P. Capper, 2001 .

Oscillatory-Driven Fluid Flow Control during Crystal Growth from the Melt

P. Capper, E. Zharikov, 2015 .

Zn concentration determination in CdZnTe by NIR spectroscopy

T. Skauli, P. Capper, C. Maxey, 1999 .

Properties of Narrow-Gap Cadmium-Based Compounds

Peter Capper, P. Capper, 1995 .

Liquid Phase Epitaxy of MCT

P. Capper, 2010 .

Growth of CdxHg1−xTe: Comparison of some properties with the predictions of two melt growth models

E. J. Pearce, P. Capper, M. Quelch, 1983 .

Factors affecting isotherm shape during Bridgman crystal growth

P. Capper, I. Kenworthy, J. Gosney, 1984 .

Thermal modelling of bridgman crystal growth

P. Capper, J. Gosney, C. Jones, 1982 .

Effect of ACRT rotation parameters on Bridgman grown CdxHg1−xTe crystals

P. Capper, W. Coates, C. Ard, 1989 .

Interfaces and flow regimes in ACRT grown CdxHg1−xTe crystals

J. Brice, P. Capper, W. Coates, 1988 .

Quenching studies in CdxHg1−xTe crystals grown using ACRT

P. Capper, W. Coates, C. Ard, 1987 .

Application of the accelerated crucible rotation technique to the Bridgman growth of CdxHg1− xTe: Simulations and crystal growth

C. L. Jones, P. Capper, P. Capper, 1984 .

ACRT: A review of models

J. Brice, P. Capper, J. Gosney, 1986 .

Quenching studies in bridgman-grown CdxHg1−xTe

P. Capper, M. Quelch, J. Gosney, 1983 .

Chemical analysis of and dopant/impurity behaviour in Hg1−xCdxTe and related materials

J. Roberts, P. Capper, 1994 .

The behaviour of selected impurities in CdxHg1−xTe

P. Capper, 1982 .

Influence of stoichiometry on the electrical activity of impurities in Hg(1−x)Cd(x)Te

J. Roberts, P. Capper, W. Coates, 1988 .

Growth and characterisation of CdxHg1-xTe grown by LPE using a novel sliding boat

J. L. Page, J. Brice, P. Capper, 1987 .

Electrical properties and annealing behaviour of CdxHg1−xTe grown by LPE and MOVPE

P. Capper, C. Maxey, B. C. Easton, 1986 .

Macro- and microsegregation of Zn in bridgman-grown CdZnTe

P. Capper, J. E. Harris, I. Gale, 1995 .

A reply to “further comments on segregation during bridgman growth of CdxHg1-xTe”

P. Capper, C. Jones, 1985 .

Comments on segregation during bridgman growth of CdxHg1-xTe

P. Capper, I. Kenworthy, J. Gosney, 1983 .

An improved system for the Bridgman growth of crystals with toxic and/or highly volatile components

P. Capper, J. E. Harris, D. Nicholson, 1979 .

Mercury Cadmium Telluride: Growth, Properties and Applications

Peter Capper, J. Garland, P. Capper, 2010 .

Hall effect measurements on Bridgman-grown CdxHg1-xTe and their analysis

P. Capper, D. Lacklison, 1987 .

Substrate orientation effects in CdxHg1−xTe grown by MOVPE

P. Capper, C. Maxey, B. C. Easton, 1989 .

Extended defects in epitaxial cadmium mercury telluride

P. Capper, A. Willoughby, C. Maxey, 1996 .

MOVPE Growth of Cadmium Mercury Telluride and Applications

P. Capper, C. Maxey, I. Baker, 2019, Metalorganic Vapor Phase Epitaxy (MOVPE).

Current status of large-area MOVPE growth of HgCdTe device heterostructures for infrared focal plane arrays

L. G. Hipwood, Chris Shaw, C. D. Maxey, 2006 .

Metal-organic vapor-phase epitaxial growth of HgCdTe device heterostructures on three-inch-diameter substrates

Neil T. Gordon, C. D. Maxey, C. L. Jones, 2003 .

N-Type Hg1−xCdxTe: Undoped x = 0.3 LPE material for sprite IR detectors

P. Capper, E. O'Keefe, D. Dutton, 1996 .

Matrix and impurity element distributions in CdHgTe (CMT) and (Cd,Zn)(Te,Se) compounds by chemical analysis

P. Capper, I. Gale, C. Maxey, 1996 .

Impurity survey analysis of CdxHgi−xTe by laser scan mass spectrometry

P. Capper, I. Gale, C. Maxey, 1995 .

Assessment of doped CdxHg1-xTe structures using bevelled sections

P. Capper, M. Hastings, I. Gale, 1993 .

Extrinsic doping at low concentrations for CDxHg1-xTe layers grown by MOVPE

P. Capper, I. Gale, J. Clegg, 1990 .

Computer controlled deposition of cmt heterostructures by Movpe

P. Capper, C. Maxey, B. C. Easton, 1986 .

Crystal growth technology : semiconductors and dielectrics

P. Capper, P. Rudolph, 2010 .

Bulk Crystal Growth of Electronic, Optical and Optoelectronic Materials (Wiley Series in Materials for Electronic & Optoelectronic Applications)

Peter Capper, P. Capper, 2005 .

Thermobalance for growth rate determinations on rotating crystals

P. Capper, M. D'agostino, D. Elwell, 1975 .

Type conversion of CdxHg1-xTe grown by liquid phase epitaxy

P. Capper, E. O'Keefe, C. Ard, 1993 .

Electron beam induced current assessment of doped and diffused junctions in epitaxial CdxHg1−xTe

B. Matthews, P. Capper, M. Hastings, 1994 .

Minority‐carrier lifetime in doped and undoped n‐type CdxHg1−xTe

R. Pratt, P. Capper, J. Hewett, 1986 .

Determination of acceptor ionisation energies in CdxHg1-xTe

P. Capper, W. Coates, I. Kenworthy, 1990 .

Minority carrier lifetime in doped and undoped epitaxially grown n-type CdxHg1−xTe

P. Capper, D. Dutton, N. Metcalfe, 1995 .

MCT MATERIALS ASPECTS

P. Capper, 2001 .

Electron mobility in p-type epitaxially grown CdxHg1-xTe

P. Capper, N. Gordon, N. Metcalfe, 1995 .

Electron mobility in p-type epitaxially grown Hg1-xCdxTe

Neil T. Gordon, P. Capper, N. E. Metcalfe, 1993 .

Transient and steady-state lifetime measurements on epitaxially grown CdxHg1-xTe

P. Capper, A. McAllister, N. Metcalfe, 1993 .

The properties of gold in Bridgman grown CdxHg1-xTe

P. Capper, M. Quelch, C. Jones, 1983 .

Properties of mercury cadmium telluride

J. C. Brice, Peter Capper, J. Brice, 1987 .

Acceptor doping of bridgman-grown CdxHg1−xTe

J. Roberts, P. Capper, I. Kenworthy, 1985 .

Wavelength mapping of mixed semiconductors using an automatic IR spectrophotometer

P. Capper, I. Kenworthy, M. R. Bennett, 1984 .

Use of near-infrared as a screening technique for CdZnTe substrates

T. Skauli, P. Capper, C. Maxey, 1999 .

Band edge absorption in CdxHg1−xTe grown by metal-organic vapour phase epitaxy

P. Capper, C. Maxey, B. C. Easton, 1989 .

Impurities and metalorganic chemical‐vapor deposition growth of mercury cadmium telluride

J. Roberts, P. Capper, I. Gale, 1991 .

A review of impurity behavior in bulk and epitaxiaL Hg1−xCdxTe

P. Capper, 1991 .

MCT: A UK Retrospective—Reminiscences of a Crystal Grower

Peter Capper, P. Capper, 2017, Journal of Electronic Materials.

Diode R0A in p-type epitaxially grown undoped CdxHg1-xTe

P. Capper, M. Hastings, N. Metcalfe, 1999 .

Determination of Shockley - Read trap parameters in n- and p-type epitaxial

P. Capper, D. Dutton, N. Metcalfe, 1996 .

Minority carrier diffusion length in undoped p-type epitaxially grown CdxHg1-xTe

P. Capper, M. Hastings, N. Metcalfe, 1999 .

Narrow-gap II-VI Compounds for Optoelectronic and Electromagnetic Applications

Peter Capper, P. Capper, 2012 .

Activation of arsenic in epitaxial Hg1-xCdxTe (MCT)

D. Shaw, P. Capper, P. Capper, 2006, SPIE Optics + Photonics.

Investigation of parameters to obtain reduced Shockley–Read traps and near radiatively limited lifetimes in MOVPE-grown MCT

Neil T. Gordon, C. D. Maxey, C. L. Jones, 2000 .

Group V acceptor doping of CdxHg1−xTe layers grown by metal-organic vapour phase epitaxy

P. Capper, C. Maxey, B. C. Easton, 1988 .

Conductivity type conversion in Hg1-xCdxTe

P. Capper, D. Shaw, 2000 .

Growth of long wavelength infrared MCT emitters on conductive substrates

T. Ashley, M. Houlton, P. Capper, 2001 .

Bulk growth of near-IR cadmium mercury telluride (CMT)

P. Capper, C. Maxey, C. Butler, 2004 .

Journal of Materials Science: Materials in Electronics August 2001

P. Capper, 2001 .

Vacancy Control of LPE and MOVPE Grown CdxHg1-xTe by Annealing Techniques

P. Capper, M. Hastings, P. Mackett, 1995 .

Bulk crystal growth of electronic, optical & optoelectronic materials

Peter Capper, P. Capper, 2005 .