M. Legallais

发表

Monolithic fabrication of nano-to-millimeter scale integrated transistors based on transparent and flexible silicon nanonets

Thi Thu Thuy Nguyen, M. Mouis, T. Cazimajou, 2019, Nano Futures.

Development of a robust fabrication process for single silicon nanowire-based omega gate transistors on polyamide substrate

M. Legallais, T. Arjmand, B. Salem, 2020, Semiconductor Science and Technology.

Toward the integration of Si nanonets into FETs for biosensing applications

M. Mouis, M. Legallais, B. Salem, 2017, 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).

An innovative large scale integration of silicon nanowire-based field effect transistors

Thi Thu Thuy Nguyen, M. Mouis, M. Legallais, 2017 .

Impact of Substrate Biasing During AlN Growth by PEALD on Al2O3/AlN/GaN MOS Capacitors

M. Charles, R. Gwoziecki, C. Le Royer, 2021, Advanced Materials Interfaces.

Wafer-scale HfO2 encapsulated silicon nanowire field effect transistor for efficient label-free DNA hybridization detection in dry environment

M. Mouis, V. Stambouli, M. Östling, 2019, Nanotechnology.

Analysis of the role of inter-nanowire junctions on current percolation effects in silicon nanonet field-effect transistors

Thi Thu Thuy Nguyen, G. Ghibaudo, M. Mouis, 2020 .

Electrical characteristics of silicon percolating nanonet-based field effect transistors in the presence of dispersion

G. Ghibaudo, M. Mouis, T. Cazimajou, 2017 .

Evaluation of Silicon Nanonet Field Effect Transistor as Photodiodes

E. Abdel-Rahman, M. Kayaharman, M. Yavuz, 2017, ECSA 2017.

H3PO4-based wet chemical etching for recovery of dry-etched GaN surfaces

M. Charles, P. Besson, M. Legallais, 2021, Applied Surface Science.

First evidence of superiority of Si nanonet field effect transistors over multi-parallel Si nanowire ones in view of electrical DNA hybridization detection

Thi Thu Thuy Nguyen, M. Mouis, V. Stambouli, 2018, Materials Research Express.

Fast re-oxidation kinetics and conduction pathway in Spark Plasma Sintered ferroelectric ceramics

S. Fourcade, F. Mauvy, M. Legallais, 2018 .

High‐Throughput Experimentation and Computational Freeway Lanes for Accelerated Battery Electrolyte and Interface Development Research

M. Winter, A. Benayad, I. Cekic‐Laskovic, 2021, Advanced Energy Materials.

Influence of substrate biasing on structural, chemical and electrical properties of Al2O3 thin films deposited by PEALD

M. Legallais, B. Salem, F. Bassani, 2022, Semiconductor Science and Technology.

Material engineering of percolating silicon nanowire networks for reliable and efficient electronic devices

Thi Thu Thuy Nguyen, M. Mouis, T. Cazimajou, 2019 .

Mechanisms involved in the hydrothermal growth of ultra-thin and high aspect ratio ZnO nanowires

M. Legallais, C. Ternon, T. Demes, 2017 .

Improvement of AlN film quality using plasma enhanced atomic layer deposition with substrate biasing.

G. Ghibaudo, T. Baron, E. Martinez, 2020, ACS applied materials & interfaces.

Functional Devices from Bottom-Up Silicon Nanowires: A Review

Thi Thu Thuy Nguyen, M. Legallais, T. Arjmand, 2022, Nanomaterials.

Low Temperature Processing to Form Oxidation Insensitive Electrical Contact at Silicon Nanowire/Nanowire Junctions

T. Baron, M. Legallais, C. Ternon, 2015 .

Chemical Stability of Si-SiC Nanostructures under Physiological Conditions

V. Stambouli, E. Bano, M. Legallais, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

Role played by the nanowire/nanowire junctions in the electrical properties of semiconductor percolating silicon nanowire networks

Thi Thu Thuy Nguyen, M. Mouis, T. Cazimajou, 2020, Journal of Applied Physics.

Silicon Nanowires: Low Temperature Processing to Form Oxidation Insensitive Electrical Contact at Silicon Nanowire/Nanowire Junctions (Adv. Electron. Mater. 10/2015)

T. Baron, M. Legallais, C. Ternon, 2015 .