B. Salem

M. Mouis, M. Legallais, B. Salem, 2017, 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).

An innovative large scale integration of silicon nanowire-based field effect transistors

Thi Thu Thuy Nguyen, M. Mouis, M. Legallais, 2017 .

Tunable enhancement of light absorption and scattering in Si1−xGexnanowires

T. Baron, B. Salem, A. Chehaidar, 2012 .

Postgrowth intermixing of strain engineered InAs/GaAs quantum dots

L. Sfaxi, H. Maaref, B. Salem, 2014 .

Growth and characterization of InAs quantum dots on GaAs (100) emitting at 1.31μm.

G. Guillot, L. Grenouillet, B. Salem, 2003 .

Impact of Substrate Biasing During AlN Growth by PEALD on Al2O3/AlN/GaN MOS Capacitors

M. Charles, R. Gwoziecki, C. Le Royer, 2021, Advanced Materials Interfaces.

Tunnelling current in Schottky diodes containing InAs quantum dots

B. Salem, M. Gendry, N. Hamdaoui, 2011 .

Study of CVD nanowire high-k metal interface quality for interconnect level MOS devices

C. Morin, J. Hartmann, T. Ernst, 2011 .

Coulomb charging effect of electrons in InAs/InAlAs quantum dots studied by capacitance techniques

H. Maaref, B. Salem, M. Gendry, 2011 .

Analysis of the role of inter-nanowire junctions on current percolation effects in silicon nanonet field-effect transistors

Thi Thu Thuy Nguyen, G. Ghibaudo, M. Mouis, 2020 .

Electrical characteristics of silicon percolating nanonet-based field effect transistors in the presence of dispersion

G. Ghibaudo, M. Mouis, T. Cazimajou, 2017 .

Evaluation of Silicon Nanonet Field Effect Transistor as Photodiodes

E. Abdel-Rahman, M. Kayaharman, M. Yavuz, 2017, ECSA 2017.

Fabrication of top-down gold nanostructures using a damascene process

T. Baron, D. Drouin, B. Salem, 2017 .

Band gap tuning of InAs∕InP quantum sticks using low-energy ion-implantation-induced intermixing

V. Aimez, P. Regreny, B. Salem, 2005 .

Strong carrier confinement and evidence for excited states in self-assembled InAs quantum islands grown on InP(001)

G. Guillot, C. Monat, G. Hollinger, 2002 .

Strong carrier confinement in self-assembled InAs/InP[001] elongated quantum islands emitting at 1.5 /spl mu/m

G. Guillot, C. Monat, G. Hollinger, 2002, Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307).

Photoluminescence from Er-doped silicon rich oxide thin films

B. Salem, V. Calvo, F. Mazen, 2006 .

H3PO4-based wet chemical etching for recovery of dry-etched GaN surfaces

M. Charles, P. Besson, M. Legallais, 2021, Applied Surface Science.

Optical anisotropy and photoluminescence temperature dependence for self-assembled InAs quantum islands grown on vicinal (001) InP substrates

J. Brault, G. Guillot, C. Monat, 2002 .

Low size dispersion of inas quantum islands emitting at 1.55/spl mu/m on InP [001]

J. Brault, O. Marty, C. Monat, 2002, Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307).

Monolithically integrated InGaAs/AlGaAs multiple quantum well photodetectors on 300 mm Si wafers

C. Leroux, J. Coignus, L. Virot, 2021, AIP Advances.

Impact of ion-implantation-induced band gap engineering on the temperature-dependent photoluminescence properties of InAs/InP quantum dashes

V. Aimez, P. Regreny, H. Maaref, 2010 .

Optical properties of self-assembled InAs quantum islands grown on InP(001) vicinal substrates

J. Brault, G. Guillot, C. Monat, 2001 .

Optimizing the spacer layer thickness of vertically stacked InAs/GaAs quantum dots

O. Marty, L. Sfaxi, H. Maaref, 2006 .

Photoluminescence studies of stacked InAs/InP quantum sticks

O. Marty, G. Guillot, C. Monat, 2005 .

Effect of spacer layer thickness on the optical properties of stacked InAs/InAlAs quantum wires grown on InP (001)

J. Brault, O. Marty, H. Maaref, 2003 .

First evidence of superiority of Si nanonet field effect transistors over multi-parallel Si nanowire ones in view of electrical DNA hybridization detection

Thi Thu Thuy Nguyen, M. Mouis, V. Stambouli, 2018, Materials Research Express.

InAs/GaSb thin layers directly grown on nominal (0 0 1)-Si substrate by MOVPE for the fabrication of InAs FINFET

G. Patriarche, Mickael Martin, T. Baron, 2019, Journal of Crystal Growth.

Hole emission processes from InAs quantum dots grown on p-type InAlAs/InP(0 0 1)

H. Maaref, B. Salem, G. Brémond, 2006 .

Effective generation lifetime depth profile in InAs quantum dots grown on InAlAs/InP(0 0 1)

H. Maaref, B. Salem, G. Brémond, 2005 .

An improved AFM cross-sectional method for piezoelectric nanostructures properties investigation: application to GaN nanowires

Thierry Baron, Xin Xu, Laurent Montès, 2011, Nanotechnology.

PiezoNEMS: Semiconductor nanowires and heterostructures for sensing and energy harvesting

M. Mouis, F. Rochette, B. Bercu, 2012, 2012 International Semiconductor Conference Dresden-Grenoble (ISCDG).

Patterned growth of high aspect ratio silicon wire arrays at moderate temperature

C. Morin, T. Baron, A. Brioude, 2011 .

Effects of thermal annealing on the structural and electrical properties of ZnO thin films for boosting their piezoelectric response

G. Ardila, V. Consonni, B. Salem, 2021, Journal of Alloys and Compounds.

From Si nanowire to SiC nanotube

D. Chaussende, G. Ferro, L. Latu-Romain, 2011 .

High-performance silicon nanowire field-effect transistor with silicided contacts

T. Baron, P. Gentile, B. Salem, 2011 .

Impact of droplet composition on the nucleation rate and morphology of vapor-liquid-solid GeSn nanowires

V. Dubrovskii, P. Gentile, B. Salem, 2020, Nanotechnology.

Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate

B. Salem, B. Ilahi, M. Baira, 2018, Nanoscale Research Letters.

Effect of HCl on the doping and shape control of silicon nanowires

T. Baron, P. Gentile, B. Salem, 2012, Nanotechnology.

Modeling the Elongation of Nanowires Grown by Chemical Bath Deposition Using a Predictive Approach

V. Consonni, B. Salem, X. Baillin, 2019, The Journal of Physical Chemistry C.

Capacitance-voltage analysis of InAs quantum dots grown on InAlAs/InP(0 0 1)

Hichem Maaref, R. Ajjel, M. Gendry, 2008, Microelectron. J..

Capacitance–voltage profile characteristics of Schottky barrier structure with InAs quantum dots grown on InAlAs/InP(001)

O. Marty, H. Maaref, B. Salem, 2006 .

Investigation of GeSn/Ge quantum dots’ optical transitions for integrated optics on Si substrate

B. Salem, B. Ilahi, M. Baira, 2019, Results in Physics.

Electrical properties of self-assembled InAs/InAlAs quantum dots on InP

H. Maaref, B. Salem, G. Brémond, 2010 .

Optical properties of self-organized InAs nanostructures grown on InAlAs/InP(001)

J. Brault, O. Marty, H. Maaref, 2003 .

Influence of substrate biasing on structural, chemical and electrical properties of Al2O3 thin films deposited by PEALD

M. Legallais, B. Salem, F. Bassani, 2022, Semiconductor Science and Technology.

Distribution of barrier heights in metal/n-InAlAs Schottky diodes from current–voltage–temperature measurements

B. Salem, M. Gendry, N. Hamdaoui, 2014 .

Deep level transient spectroscopy studies at low temperature of In0.52Al0.48As epilayers

H. Maaref, B. Salem, G. Brémond, 2007 .

Evidence of excited levels in self-organized InAs/InP(0 0 1) islands with low size dispersion

G. Guillot, C. Monat, G. Hollinger, 2003 .

Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP(001)

Michel Gendry, Geneviève Grenet, J. Brault, 2002 .

Material engineering of percolating silicon nanowire networks for reliable and efficient electronic devices

Thi Thu Thuy Nguyen, M. Mouis, T. Cazimajou, 2019 .

Arsenic pressure and spacer layer thickness effects on the optical properties of stacked InAs/InAlAs quantum dot array

H. Maaref, B. Salem, X. Marie, 2005 .

Linear and Nonlinear Intersubband Optical Properties of Direct Band Gap GeSn Quantum Dots

B. Salem, B. Ilahi, M. Baira, 2019, Nanomaterials.

Thermally activated inter-dots carriers' transfer in InAs QDs with InGaAs underlying layer: Origin and dependence on the post-growth intermixing

V. Aimez, L. Sfaxi, H. Maaref, 2016 .

Carriers' localization and thermal redistribution in post growth voluntarily tuned quantum dashes' size/composition distribution

V. Aimez, H. Maaref, B. Salem, 2014 .

Impact of the wetting layer thickness on the emission wavelength of direct band gap GeSn/Ge quantum dots

B. Salem, B. Ilahi, R. Al-Saigh, 2017 .

Formation mechanisms of ZnO nanowires on polycrystalline Au seed layers for piezoelectric applications

V. Consonni, B. Salem, E. Sarigiannidou, 2019, Nanotechnology.

Silicon nanowires: Diameter dependence of growth rate and delay in growth

Thierry Baron, Bassem Salem, Jean-Christophe Harmand, 2010 .

Ion channeling effects on quantum well intermixing in phosphorus-implanted InGaAsP/ InGaAs/ InP

V. Aimez, B. Salem, D. Morris, 2005 .

Composition-dependent interfacial abruptness in Au-catalyzed Si(1-x)Ge(x)/Si/Si(1-x)Ge(x) nanowire heterostructures.

G. Patriarche, T. Baron, V. Dubrovskii, 2014, Nano letters.

Growth strategies to control tapering in Ge nanowires

T. Baron, P. Gentile, B. Salem, 2014 .

Vertically integrated silicon-germanium nanowire field-effect transistor

T. Baron, P. Gentile, B. Salem, 2011 .

Controlled growth of SiGe nanowires by addition of HCl in the gas phase

L. Latu-Romain, J. Kreisel, T. Baron, 2011 .

Growth and characterization of gold catalyzed SiGe nanowires and alternative metal-catalyzed Si nanowires

L. Latu-Romain, J. Kreisel, T. Baron, 2011, Nanoscale research letters.

Self-connected horizontal silicon nanowire field effect transistor

T. Baron, P. Gentile, B. Salem, 2009 .

Improvement of AlN film quality using plasma enhanced atomic layer deposition with substrate biasing.

G. Ghibaudo, T. Baron, E. Martinez, 2020, ACS applied materials & interfaces.

Chemical Bath Deposition of ZnO Nanowires Using Copper Nitrate as an Additive for Compensating Doping.

V. Consonni, B. Salem, X. Baillin, 2021, Inorganic chemistry.

Control of the interfacial abruptness of Au-catalyzed Si-Si1−xGex heterostructured nanowires grown by vapor–liquid–solid

L. Latu-Romain, G. Patriarche, T. Baron, 2014 .

Interfacial abruptness in axial Si/SiGe heterostructures in nanowires probed by scanning capacitance microscopy

L. Latu-Romain, G. Patriarche, T. Baron, 2014 .

Control of heterointerface and strain mapping in Au catalyzed axial Si-Si 1-x Ge x nanowires

L. Latu-Romain, G. Patriarche, T. Baron, 2014 .

Functional Devices from Bottom-Up Silicon Nanowires: A Review

Thi Thu Thuy Nguyen, M. Legallais, T. Arjmand, 2022, Nanomaterials.

Effects of Zinc Nitrate and HMTA on the Formation Mechanisms of ZnO Nanowires on Au Seed Layers

V. Consonni, B. Salem, X. Baillin, 2023, Crystal Growth & Design.

Reversible Al Propagation in SixGe1–x Nanowires: Implications for Electrical Contact Formation

T. Baron, P. Gentile, B. Salem, 2020, ACS applied nano materials.

Wideband frequency and in situ characterization of aluminum nitride (AlN) in a metal/insulator/metal (MIM) configuration

T. Lacrevaz, C. Bermond, B. Fléchet, 2011 .

ELECTRICAL CHARACTERIZATION OF PLANAR SILICON NANOWIRE FIELD-EFFECT TRANSISTORS

T. Baron, L. Cagnon, P. Gentile, 2012 .

Geometrical control of photocurrent in active Si nanowire devices

V. Aimez, P. Gentile, D. Drouin, 2012 .

Improved characteristics of a terahertz set-up built with an emitter and a detector made on proton-bombarded GaAs photoconductive materials

Vincent Aimez, Jacques Beauvais, Bassem Salem, 2006 .

Engineering Self-Assembly of a High-χ Block Copolymer for Large-Area Fabrication of Transistors Based on Functional Graphene Nanoribbon Arrays

B. Salem, M. Zelsmann, A. Legrain, 2019, Chemistry of Materials.

Optical investigation of phosphorous-ion-implantation induced InAs/GaAs quantum dots' intermixing

V. Aimez, L. Sfaxi, H. Maaref, 2008 .

Impact of laser anneal on NiPt silicide texture and chemical composition

C. Lavoie, R. Beneyton, L. Clément, 2017 .

Optimization of GOPS-Based Functionalization Process and Impact of Aptamer Grafting on the Si Nanonet FET Electrical Properties as First Steps towards Thrombin Electrical Detection

M. Mouis, V. Stambouli, B. Salem, 2020, Nanomaterials.

Surface recombination velocity measurements of efficiently passivated gold-catalyzed silicon nanowires by a new optical method.

Bassem Salem, N. Magnea, Fabrice Oehler, 2010, Nano letters.

Optical properties of self-assembled InAs quantum dots grown on InAlAs/InP(001)

J. Brault, G. Guillot, B. Salem, 2002 .

Influence of the Cl2 etching on the Al2O3/GaN metal–oxide–semiconductor interface

B. Salem, E. Pargon, S. Boubenia, 2022, Journal of Vacuum Science & Technology B.

Fabrication and characterization of silicon nanowire p-i-n MOS gated diode for use as p-type tunnel FET

Gerard Ghibaudo, Thierry Baron, P. Periwal, 2015 .

Verifying the band gap narrowing in tensile strained Ge nanowires by electrical means

T. Baron, P. Gentile, B. Salem, 2020, Nanotechnology.

Morphology Transition of ZnO from Thin Film to Nanowires on Silicon and its Correlated Enhanced Zinc Polarity Uniformity and Piezoelectric Responses.

G. Ardila, V. Consonni, B. Salem, 2020, ACS applied materials & interfaces.

Integration of SiC-1D nanostructures into nano-field effect transistors

L. Latu-Romain, M. Ollivier, E. Bano, 2015 .

Persistence of In/Ga intermixing beyond the emission energy blueshift saturation of proton-implanted InAs/GaAs quantum dots

H. Maaref, V. Aimez, L. Sfaxi, 2010 .

Intermixing of InAs/GaAs quantum dots by proton implantation and rapid thermal annealing

V. Aimez, L. Sfaxi, H. Maaref, 2009 .

Inhomogeneous broadening and alloy intermixing in low proton dose implanted InAs/GaAs self-assembled quantum dots

H. Maaref, V. Aimez, L. Sfaxi, 2008, Nanotechnology.

From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001)

J. Brault, O. Marty, G. Guillot, 2004 .

Tuneable polarity and enhanced piezoelectric response of ZnO thin films grown by metal-organic chemical vapour deposition through the flow rate adjustment

V. Consonni, B. Salem, X. Mescot, 2021, Materials Advances.

Micro-photoluminescence study of single self-organized InAs/InP quantum sticks

G. Guillot, C. Monat, B. Salem, 2005 .

High density and taper-free boron doped Si1−xGex nanowire via two-step growth process

T. Baron, B. Salem, J. Barnes, 2014 .

From planar to vertical nanowires field-effect transistors

L. Latu-Romain, T. Baron, P. Gentile, 2012 .

Functionalized silicon nanowires/conjugated polymer hybrid solar cells: Optical, electrical and morphological characterizations

T. Baron, H. Maaref, P. Gentile, 2015 .

Chemical Stability of Si-SiC Nanostructures under Physiological Conditions

V. Stambouli, E. Bano, M. Legallais, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

Spacer layer thickness effects on the photoluminescence properties of InAs/GaAs quantum dot superlattices

O. Marty, L. Sfaxi, H. Maaref, 2003 .

Optical properties of 1.3 μm room temperature emitting InAs quantum dots covered by In0.4Ga0.6As/GaAs hetero-capping layer

G. Guillot, L. Sfaxi, H. Maaref, 2005 .

Understanding and improving the low optical emission of InGaAs quantum wells grown on oxidized patterned (001) silicon substrate

Mickael Martin, T. Baron, N. Rochat, 2018 .

Fabrication of SiC nanopillars by inductively coupled SF6/O2 plasma etching

D. Chaussende, L. Latu-Romain, E. Bano, 2012 .

Sub-10 nm plasma nanopatterning of InGaAs with nearly vertical and smooth sidewalls for advanced n-fin field effect transistors on silicon

Thierry Baron, Erwine Pargon, Bassem Salem, 2017 .

Size and shape effects on excitons and biexcitons in single InAs∕InP quantum dots

Michel Gendry, Bassem Salem, Gérard Guillot, 2006 .

Synthesis of AlOxNy thin films using a two-step PE-ALD process

E. Martinez, B. Salem, F. Bassani, 2023, AIP Advances.

Implementing the Reactor Geometry in the Modeling of Chemical Bath Deposition of ZnO Nanowires

V. Consonni, B. Salem, X. Baillin, 2022, Nanomaterials.

Smooth plasma etching of GeSn nanowires for gate-all-around field effect transistors

E. Eustache, B. Salem, S. David, 2021, Semiconductor Science and Technology.

Influence of the AZO Electrode on ZnO Nanowire Growth by PLI-MOCVD and Related Piezoelectric Performance: Implications for Mechanical Energy Transducers

G. Ardila, V. Consonni, B. Salem, 2023, ACS Applied Nano Materials.

Dopant profiling in silicon nanowires measured by scanning capacitance microscopy

D. Mariolle, T. Baron, P. Gentile, 2014 .

Impact of Post-Deposition Anneal on ALD Al2O3/etched GaN Interface for Gate-First MOSc-HEMT

R. Gwoziecki, N. Rochat, B. Salem, 2023, Power Electronic Devices and Components.

Role played by the nanowire/nanowire junctions in the electrical properties of semiconductor percolating silicon nanowire networks

Thi Thu Thuy Nguyen, M. Mouis, T. Cazimajou, 2020, Journal of Applied Physics.

Chemical-vapour-deposition growth and electrical characterization of intrinsic silicon nanowires

Thierry Baron, H. Jamgotchian, Bassem Salem, 2009 .

High Figure-of-Merit in Al-Doped ZnO Thin Films Grown by ALD through the Al Content Adjustment

G. Ardila, V. Consonni, B. Salem, 2023, Materialia.

Composition-dependent interfacial abruptness in Au-catalyzed Si(1-x)Ge(x)/Si/Si(1-x)Ge(x) nanowire heterostructures.

G. Patriarche, T. Baron, V. Dubrovskii, 2014, Nano letters.

Correlation between the Dimensions and Piezoelectric Properties of ZnO Nanowires Grown by PLI-MOCVD with Different Flow Rates

G. Ardila, V. Consonni, B. Salem, 2023, Nanoenergy Advances.

Effect of Al2O3 thickness and oxidant precursors on the interface composition and contamination in Al2O3/GaN structures

B. Salem, E. Martinez, M. Veillerot, 2024, SSRN Electronic Journal.