D. Koleske

D. Koleske, A. Fischer, J. Wendt, 2009, 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference.

Studies of high field transport in GaN/AlGaN heterostructures

A. Allerman, D. Ferry, S. Goodnick, 2004, Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004..

Log‐Pile TiO2 Photonic Crystal for Light Control at Near‐UV and Visible Wavelengths

D. Koleske, Y. Lee, A. Fischer, 2010, Advanced materials.

"Noncontact" pumping of semiconductor nanocrystals via nonradiative energy transfer from a proximal quantum well

M. Petruska, M. Achermann, V. Klimov, 2004, Conference on Lasers and Electro-Optics, 2004. (CLEO)..

Thermal activation of Mg-doped GaN as monitored by electron paramagnetic resonance spectroscopy

A. Wickenden, D. Koleske, R. Henry, 2004 .

Spatial mapping of efficiency of GaN/InGaN nanowire array solar cells using scanning photocurrent microscopy.

Jonathan J. Wierer, George T. Wang, Qiming Li, 2013, Nano letters.

Influence of pH on the Quantum-Size-Controlled Photoelectrochemical Etching of Epitaxial InGaN Quantum Dots

George T. Wang, J. Tsao, M. Coltrin, 2015 .

Photoelectrochemical etching of epitaxial InGaN thin films: Self-limited kinetics and nanostructuring

George T. Wang, J. Tsao, M. Coltrin, 2015 .

The influence of OMVPE growth pressure on the morphology, compensation, and doping of GaN and related alloys

W. J. Moore, J. Freitas, A. Wickenden, 2000 .

InGaN/GaN multiple-quantum-well light-emitting diodes grown on Si(111) substrates with ZrB2(0001) buffer layers

David J. Smith, J. Roberts, M. Crawford, 2012 .

Deep level investigation of p-type GaN using a simple photocurrent technique

G. Thaler, D. Koleske, A. Armstrong, 2008 .

Controlling Indium Incorporation in InGaN Barriers with Dilute Hydrogen Flows.

Jonathan J. Wierer, D. Koleske, A. Fischer, 2014 .

InGaN quantum dots for high efficiency blue and green light emitters

Jeremy B. Wright, George T. Wang, J. Tsao, 2014, 2014 Conference on Lasers and Electro-Optics (CLEO) - Laser Science to Photonic Applications.

Ultrafast and band-selective Auger recombination in InGaN quantum wells

M. Crawford, Xiaoyang Zhu, D. Koleske, 2016 .

GaN Decomposition in Ammonia

A. Wickenden, D. Koleske, R. Henry, 1999 .

High resolution X-ray diffraction and X-ray topography study of GaN on sapphire

A. Wickenden, D. Koleske, R. Henry, 1999 .

Optically detected magnetic resonance of (effective-mass) shallow acceptors in Si-doped GaN homoepitaxial layers.

S. S. Park, B. V. Shanabrook, J. Han, 2003 .

Phase degradation in B x Ga 1-x N films grown at low temperature by metalorganic vapor phase epitaxy

A. Allerman, D. Koleske, M. Moseley, 2017 .

On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590 nm with AlGaN interlayers

Jonathan J. Wierer, P. Kotula, D. Koleske, 2015 .

Metalorganic vapor phase epitaxy of AlN on sapphire with low etch pit density

D. Koleske, J. Figiel, J. R. Creighton, 2017 .

The Use of AlN Interlayers to Improve GaN Growth on A-Plane Sapphire

J. Freitas, A. Wickenden, M. Twigg, 1999 .

Location Of Residual Donors In GaN Epitaxial Layers

R. Davis, A. Wickenden, D. Koleske, 1997 .

Composition and structure of the GaN{0001¯}-(1×1) surface

A. Wickenden, M. Sung, D. Koleske, 1996 .

Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)

W. J. Moore, B. V. Shanabrook, S. Denbaars, 2002 .

Different character of the donor-acceptor pair-related 3.27 eV band and blue photoluminescence in Mg-doped GaN. Hydrostatic pressure studies

M. Boćkowski, J. Freitas, A. Wickenden, 2000 .

Optically detected magnetic resonance of shallow donor – shallow acceptor and deep (2.8–3.2 eV) recombination from Mg-doped GaN

B. V. Shanabrook, J. Freitas, A. Wickenden, 1999 .

Optically detected electron-nuclear double resonance of epitaxial GaN

A. Wickenden, W. Carlos, J. A. Freitas, 1998 .

Low resistance ohmic contact to p-type GaN using Pd/Ir/Au multilayer scheme

A. Allerman, I. Adesida, Jae‐Hyung Jang, 2005 .

Facile abstraction of chemisorbed D on Si(100) by atomic H

S. Gates, D. Koleske, J. Schultz, 1993 .

Potential Si atomic layer epitaxy processes using halogenated Si precursors

S. Gates, D. Koleske, D. Beach, 1993 .

COMMUNICATIONS Influence of Si surface structure on reaction mechanism: Atomic hydrogen + adsorbed Br

S. Gates, D. Koleske, 1993 .

Nanofabrication of tunable nanowire lasers via electron and ion-beam based techniques.

Jeremy B. Wright, George T. Wang, Qiming Li, 2012 .

Quantitative and Depth-Resolved Investigation of Deep-Level Defects in InGaN/GaN Heterostructures

M. Crawford, D. Koleske, A. Armstrong, 2011 .

Final LDRD Report: Nanoengineering for Solid-State Lighting

S. Report, Shawn-Yu Lin, E. Schubert, 2009 .

3-D Mapping of Quantum Wells in a GaN/InGaN Core-Shell Nanowire Light Emitting Diode Array.

Jonathan J. Wierer, George T. Wang, Qiming Li, 2013 .

Current-Voltage Characteristics of Ungated AlGaN/GaN Heterostructures

M. Ancona, S. Binari, A. Wickenden, 1999 .

Spectroscopic Investigation of Traps Producing Current Collapse In AlGaN/GaN Hemt Structures

S. Binari, P. Klein, A. Wickenden, 2001 .

Growth and characterization of epitaxial layers on aluminum nitride substrates prepared from bulk, single crystals

M. Shur, M. Khan, R. Gaska, 2002 .

L. Lauhon, D. Koleske, Xiaochen Ren, 2015 .

InGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor deposition

H. Atwater, G. Thaler, M. Crawford, 2008 .

Magnetic Resonance Studies of High-Resistivity GaN Films Grown on Al2O3

J. Freitas, A. Wickenden, D. Koleske, 1996 .

Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers

A. A. Allerman, C. R. Abernathy, Paula P. Provencio, 2005 .

Identifying threading dislocations in GaN films and substrates by electron channelling

R. Davis, L. Porter, D. Koleske, 2011, Journal of microscopy.

Kinetic Study of the Oxidation of Gallium Nitride in Dry Air

S. D. Wolter, Daniel D. Koleske, Suzanne E. Mohney, 1998 .

Surface dynamics of ordered Cu3Au(001) studied by elastic and inelastic helium atom scattering

S. Sibener, D. Koleske, B. Gans, 1992 .

Structure and Dynamics of Cu3Au(001) Studied by Elastic and Inelastic Helium Atom Scattering

S. Sibener, D. Koleske, B. Gans, 1990 .

Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN

Daniel D. Koleske, Mark E. Twigg, A. Wickenden, 2002 .

Influence of oxygen dissolution history on reconstruction behavior of a stepped metal surface

S. Darling, S. Sibener, D. Koleske, 2002 .

Reconstruction kinetics of a stepped metallic surface: step doubling and singling of Ni(977) induced by low oxygen coverages

S. Sibener, D. Koleske, D. Gaspar, 1996 .

Hydrogen on polycrystalline diamond films: Studies of isothermal desorption and atomic deuterium abstraction

J. N. Russell, S. Gates, J. Butler, 1995 .

Study of GaN films by pulsed laser photoelectron spectroscopy

Richard T. Williams, H. Morkoç, A. Wickenden, 1998 .

FROM SCATTERING AND RECOILING SPECTROMETRY TO SCATTERING AND RECOILING IMAGING. DISCUSSION

D. C. Jacobs, M. Sung, D. Koleske, 1995 .

Contribution of deep-level defects to decreasing radiative efficiency of InGaN/GaN quantum wells with increasing emission wavelength

Daniel D. Koleske, Mary H. Crawford, Andrew M. Armstrong, 2014 .

Three-dimensional mapping of quantum wells in a GaN/InGaN core-shell nanowire light-emitting diode array.

Ping Lu, Sonal Padalkar, Jonathan J. Wierer, 2013, Nano letters.

In situ measurements of the critical thickness for strain relaxation in AlGaN∕GaN heterostructures

Daniel D. Koleske, Karen Charlene Cross, S. R. Lee, 2004 .

Connection between GaN and InGaN growth mechanisms and surface morphology

M. Coltrin, M. Crawford, D. Koleske, 2014 .

Indium induced step transformation during InGaN growth on GaN

S. R. Lee, G. Thaler, M. Coltrin, 2010 .

Thermal stability of thin InGaN films on GaN

G. Thaler, M. Crawford, D. Koleske, 2010 .

Epitaxial Si films on Ge(100) grown via H/Cl exchange

Daniel D. Koleske, M. Copel, Stephen M. Gates, 1993 .

Atomic layer epitaxy of Si on Ge(100): Direct recoiling studies of film morphology

S. Gates, D. Koleske, 1994 .

Atomic layer epitaxy of Si on Ge(100) using Si2Cl6 and atomic hydrogen

Daniel D. Koleske, Stephen M. Gates, S. Gates, 1994 .

Solid-State Lighting: Toward Smart and Ultraefficient Materials, Devices, Lamps, and Systems

R. F. Karlicek, Robert F. Karlicek, Michael E. Coltrin, 2015 .

Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence

A. A. Allerman, Arthur J. Fischer, William G. Breiland, 2002 .

GaN decomposition in H2 and N2 at MOVPE temperatures and pressures

Daniel D. Koleske, Mark E. Twigg, Alma Wickenden, 2001 .

Enhanced GaN decomposition in H2 near atmospheric pressures

A. Wickenden, M. Twigg, D. Koleske, 1998 .

Surface morphology of Si on Si(100) grown below 500 °C using H/Cl exchange chemistry

S. Gates, D. Koleske, 1993 .

Precursors for Si atomic layer epitaxy: Real time adsorption studies on Si(100)

Daniel D. Koleske, Stephen M. Gates, S. Gates, 1992 .

Elemental marking of Si on Si(100) interfaces

S. Gates, D. Koleske, 1992 .

Deterministically placed quantum dots for quantum nanophotonics

D. Koleske, A. Fischer, G. Subramania, 2016, 2016 18th International Conference on Transparent Optical Networks (ICTON).

The dependence of the structure and electronic properties of wurtzite GaN surfaces on the method of preparation

A. Wickenden, D. Koleske, V. Bermudez, 1998 .

Efficient electron-stimulated desorption of hydrogen from GaN(0001)

A. Wickenden, D. Koleske, R. Henry, 1999 .

Electronic structure of H/GaN(0001): An EELS study of Ga-H formation

A. Wickenden, D. Koleske, R. Henry, 1999 .

HREELS of H/GaN(0001): evidence for Ga termination

A. Wickenden, D. Koleske, R. Henry, 1999 .

Growth model for GaN with comparison to structural, optical, and electrical properties

Daniel D. Koleske, A. Wickenden, D. Koleske, 1998 .

Internal quantum efficiency and non-radiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

S. R. Lee, G. Thaler, M. Schubert, 2009, 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference.

Determination of energy-band offsets between GaN and AlN using excitonic luminescence transition in AlGaN alloys

J. Lin, Hongxing Jiang, R. T. Senger, 2006 .

Vibrational dynamics of a stepped metallic surface: Step-edge phonons and terrace softening on Ni(977)

S. Sibener, D. Koleske, D. Gaspar, 1995 .

Generation of pseudorandom sequences for use in cross‐correlation modulation

Steven J. Sibener, D. D. Koleske, S. Sibener, 1992 .

The impact of piezoelectric polarization and nonradiative recombination on the performance of (0001) face GaN/InGaN photovoltaic devices

Jonathan J. Wierer, D. Koleske, A. Fischer, 2010 .

Enhancement of electrical and structural properties of GaN layers grown on vicinal-cut, a-plane sapphire substrates

J. Freitas, A. Wickenden, M. Twigg, 1998 .

The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes

E. Fred Schubert, Jong Kyu Kim, Daniel D. Koleske, 2009 .

Method for determining the radiative efficiency of GaInN quantum wells based on the width of efficiency-versus-carrier-concentration curve

E. Fred Schubert, Jaehee Cho, Daniel D. Koleske, 2012 .

Dependence of radiative efficiency and deep level defect incorporation on threading dislocation density for InGaN/GaN light emitting diodes

Daniel D. Koleske, Mary H. Crawford, Karl R. Westlake, 2012 .

Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes

E. Fred Schubert, Jaehee Cho, Jing Wang, 2010 .

Temperature‐dependent light‐output characteristics of GaInN light‐emitting diodes with different dislocation densities

E. Fred Schubert, Jaehee Cho, Jong Kyu Kim, 2010 .

III-nitride core–shell nanowire arrayed solar cells

Jonathan J. Wierer, George T. Wang, Qiming Li, 2012, Nanotechnology.

OPTICAL DETECTION OF ELECTRON PARAMAGNETIC RESONANCE IN ELECTRON-IRRADIATED GAN

G. D. Watkins, V. Härle, R. Molnar, 1999 .

Temperature dependence and anharmonicity of phonons on Ni( 110) and Cu( 110) using molecular dynamics simulations

S. Sibener, D. Koleske, 1993 .

Molecular dynamics simulations of the basal planes of Ni and Cu using Finnis-Sinclair potentials

S. Sibener, D. Koleske, 1993 .

Phonons on fcc (100), (110), and (111) surfaces using Lennard-Jones potentials

S. Sibener, D. Koleske, 1992 .

Phonons on fcc (100), (110), and (111) surfaces using Lennard-Jones potentials. II: Temperature dependence of surface phonons studied with molecular dynamics

S. Sibener, D. Koleske, 1992 .

Resistivity control in unintentionally doped GaN films grown by MOCVD

Daniel D. Koleske, Mark E. Twigg, A. Wickenden, 2004 .

Surface composition and structure of GaN epilayers on sapphire

A. Wickenden, M. Sung, D. Koleske, 1997 .

Ohmic contacts to Al‐rich AlGaN heterostructures

A. Allerman, A. Baca, D. Koleske, 2017 .

Growth and design of deep-UV (240–290 nm) light emitting diodes using AlGaN alloys

A. A. Allerman, Arthur J. Fischer, Paula P. Provencio, 2004 .

Phonons on fcc ( 100 ) , ( 1 I 0 ) , and ( I 11 ) surfaces using Lennard-Jones potentials

S. Sibener, D. Koleske, 2002 .

Understanding GaN nucleation layer evolution on sapphire.

A. Allerman, M. Coltrin, D. Koleske, 2004 .

Emissivity-correcting mid-infrared pyrometry for group-III nitride MOCVD temperature measurement and control

W. Breiland, G. Thaler, M. Crawford, 2008 .

Emissivity-correcting near-UV pyrometry for group-III nitride OMVPE.

Daniel D. Koleske, James Randall Creighton, D. Koleske, 2006 .

Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers

Wei Sun, Nelson Tansu, Daniel D. Koleske, 2017 .

Design and calibration of a scanning force microscope for friction, adhesion, and contact potential studies

Kathryn J. Wahl, Richard J. Colton, Gil U. Lee, 1995 .

Isothermal desorption of hydrogen from polycrystalline diamond films

J. N. Russell, S. Gates, J. Butler, 1994 .

Bulk GaN and AlGaN∕GaN heterostructure drift velocity measurements and comparison to theoretical models

R. J. Shul, David K. Ferry, Daniel D. Koleske, 2005 .

Issues associated with the metalorganic chemical vapor deposition of ScGaN and YGaN alloys.

G. Thaler, M. Crawford, D. Koleske, 2009 .

Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers

Jonathan J. Wierer, M. Crawford, D. Koleske, 2015 .

Optically detected magnetic resonance of the red and near-infrared luminescence in Mg-doped GaN

O. Ambacher, M. Stutzmann, M. Brandt, 2001 .

Quantitative and depth-resolved deep level defect distributions in InGaN/GaN light emitting diodes.

S. R. Lee, M. Crawford, D. Koleske, 2012, Optics express.

On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms

E. Fred Schubert, Jaehee Cho, Daniel D. Koleske, 2011, CLEO: 2011 - Laser Science to Photonic Applications.

Multi-Colour Nanowire Photonic Crystal Laser Pixels

Sheng Liu, Igal Brener, Ping Lu, 2013, Scientific Reports.

Semi-polar GaN materials technology for high IQE green LEDs.

M. Coltrin, M. Crawford, P. Fini, 2013 .

Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition

W. J. Moore, B. V. Shanabrook, S. Denbaars, 2002 .

Energy Frontier Research Center for Solid-State Lighting Science: Exploring New Materials Architectures and Light Emission Phenomena

E. Fred Schubert, Weng W. Chow, Jeffrey Y. Tsao, 2014 .

Effects of material growth technique and Mg doping on Er3+ photoluminescence in Er-implanted GaN

S. G. Bishop, Ki Wook Kim, J. Myoung, 2001 .

THE ORIGIN OF RED LUMINESCENCE FROM MG-DOPED GAN

M. Stutzmann, M. Brandt, A. Wickenden, 1999 .

Aluminum, magnesium, and gold contacts to contamination free n-GaN surfaces

A. Kahn, A. Wickenden, D. Koleske, 2001 .

Energy band engineering of InGaN/GaN multi-quantum-well solar cells via AlGaN electron- and hole-blocking layers

Xuanqi Huang, Houqiang Fu, Jossue Montes, 2018, Applied Physics Letters.

Reliability analysis of InGaN/GaN multi-quantum-well solar cells under thermal stress

Zhijian Lu, H. Chen, D. Koleske, 2017 .

Improving emission uniformity and linearizing band dispersion in nanowire arrays using quasi-aperiodicity

M. Povinelli, D. Koleske, G. Subramania, 2017 .

Enhanced light‐extraction from a GaN waveguide using micro‐pillar TiO2SiO2 graded‐refractive‐index layers

E. Schubert, M. Crawford, Jaehee Cho, 2011 .

Final LDRD report : design and fabrication of advanced device structures for ultra high efficiency solid state lighting.

A. Allerman, M. Crawford, J. Wendt, 2005 .

Electroreflectance studies of Stark shifts and polarization-induced electric fields in InGaN/GaN single quantum wells

S. R. Kurtz, D. Koleske, R. Kaplar, 2004 .

Quantum-confined stark effect and polarization field in single quantum well InGaN/GaN LEDs.

Daniel D. Koleske, Robert James Kaplar, S. R. Kurtz, 2005 .

Scanning Probe Microscope Study of Mixed Chain-Length Phase-Segregated Langmuir-Blodgett Monolayers

Gil U. Lee, R. Colton, D. Koleske, 1996 .

Thermal Desorption of Deuterium from GaN(0001)

D. Koleske, R. Henry, Y. Yang, 2001 .

Multi-color arrays of III-nitride photonic crystal nanowire lasers on a single chip

Jeremy B. Wright, George T. Wang, Qiming Li, 2013, CLEO: 2013.

Dopants on Si(100) surfaces: useful probes of silicon atomic layer epitaxy?

S. Gates, D. Koleske, 1993 .

Influence of AlN nucleation layer temperature on GaN electronic properties grown on SiC

S. Binari, A. Wickenden, M. Twigg, 2002 .

Raman scattering, photoluminescence, and X-ray diffraction studies of GaN layers grown on misoriented sapphire substrates

A. Wickenden, M. Twigg, D. Koleske, 2002 .

Effects of surface treatment on the velocity–field characteristics of AlGaN/GaN heterostructures

A. Allerman, D. Ferry, S. Goodnick, 2004 .

Measurements of the velocity-field characteristic in AlGaN/GaN heterostructures

Stephen M. Goodnick, David K. Ferry, Daniel D. Koleske, 2002 .

Desorption of hydrogen from GaN(0001) observed by HREELS and ELS

A. Wickenden, D. Koleske, R. Henry, 1999 .

Donors in hydride-vapor-phase epitaxial GaN

W. J. Moore, B. V. Shanabrook, J. A. Freitas, 2002 .

Using optical reflectance to measure GaN nucleation layer decomposition kinetics

M. Coltrin, D. Koleske, M. J. Russell, 2005 .

Ion implantation damage recovery in GaN

D. Koleske, K. Sickafus, I. Usov, 2009 .

Hydrogen configurations, formation energies, and migration barriers in GaN

A. Allerman, D. Koleske, S. Myers, 2003 .

Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress

J. A. Roussos, J. A. Mittereder, David F. Storm, 2003 .

Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping

E. Fred Schubert, Jaehee Cho, Daniel D. Koleske, 2010 .

Repeatability of Si concentration measurements in Si-doped GaN films

A. Wickenden, P. Chi, D. Simons, 1997 .

The influence of strain and mosaic structure on electrical and optical properties of GaN films on sapphire substrates

A. Wickenden, J. A. Freitas, D. Koleske, 1997 .

Surface energy constraints for heteroepitaxial growth on compliant substrates: Morphology of GaN grown on Sc layers

J. Freitas, A. Wickenden, D. Koleske, 1996 .

Nanostructural engineering of nitride nucleation layers for GaN substrate dislocation reduction.

G. Thaler, M. Coltrin, D. Koleske, 2009 .

Chapter 10 – Structural defects in nitride heteroepitaxy

A. Wickenden, M. Twigg, D. Koleske, 2000 .

Enhanced GaN Decomposition at Movpe Pressures

A. Wickenden, M. Twigg, D. Koleske, 1999 .

Growth of GaN on porous SiC and GaN substrates

C. D. Lee, C. K. Inoki, I. Adesida, 2003 .

Combined MOCVD and MBE growth of GaN on porous SiC

C. K. Inoki, D. Koleske, T. Kuan, 2003 .

Optical and electrical step-recovery study of minority-carrier transport in an InGaN∕GaN quantum-well light-emitting diode grown on sapphire

S. R. Kurtz, D. Koleske, R. Kaplar, 2004 .

Characterization of Minority-Carrier Hole Transport in Nitride-Based Light-Emitting Diodes with Optical and Electrical Time-Resolved Techniques

A. Allerman, M. Crawford, D. Koleske, 2004 .

The impact of nitridation and nucleation layer process conditions on morphology and electron transport in GaN epitaxial films

Daniel D. Koleske, Mark E. Twigg, James C. Culbertson, 1999 .

The microstructure of GaN nucleation layers grown by MOCVD on (11 2 0) sapphire versus pressure and temperature

T. Wojtowicz, P. Ruterana, A. Wickenden, 2003 .

Effect of growth temperature on the microstructure of the nucleation layers of GaN grown by MOCVD on (11 2 0) sapphire

T. Wojtowicz, P. Ruterana, A. Wickenden, 2002 .

Microstructure of GaN Grown on (11 2 0) Sapphire

P. Ruterana, A. Wickenden, M. Twigg, 2000 .

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells

Harry A. Atwater, Arthur J. Fischer, Daniel D. Koleske, 2010 .

Light Trapping in Ultrathin Plasmonic Solar Cells References and Links

G. Whitesides, R. Walters, H. Atwater, 2022 .

Solid‐State Lighting: Toward Smart and Ultra‐efficient Solid‐State Lighting (Advanced Optical Materials 9/2014)

R. F. Karlicek, Jonathan J. Wierer, George T. Wang, 2014 .

Ga vacancies and grain boundaries in GaN

A. Wickenden, M. Twigg, D. Koleske, 2003 .

Solid-State Lighting: Toward Smart and Ultraefficient Materials, Devices, Lamps, and Systems

R. F. Karlicek, Jonathan J. Wierer, George T. Wang, 2015 .

Influence of barrier thickness on the performance of InGaN/GaN multiple quantum well solar cells

Daniel D. Koleske, Jonathan J. Wierer, D. Koleske, 2012 .

Yun-Han Lee, Shin-Tson Wu, Ruidong Zhu, 2022 .

Identifying threading dislocations in GaN films and substrates by electron channelling

R. Davis, L. Porter, D. Koleske, 2011, Journal of microscopy.

Magnetic resonance studies of defects in GaN with reduced dislocation densities

S. S. Park, Richard J. Molnar, Evan R. Glaser, 2001 .

Improved InGaN LED Efficiency using Photonic Crystal Patterning and Surface Plasmon Enhanced Emission

J. Wendt, D. Koleske, Y. Lee, 2008 .