D. Cott

发表

Heterogeneous TiO2/V2O5/Carbon Nanotube Electrodes for Lithium-Ion Batteries.

C. Detavernier, Shao-Ren Deng, S. Bals, 2017, ACS applied materials & interfaces.

In vitro recording of neural activity using carbon nanosheet microelectrodes

N. Collaert, C. Lopez, M. Volder, 2014 .

Bottom-up SiO2 embedded carbon nanotube electrodes with superior performance for integration in implantable neural microsystems.

Wolfgang Eberle, Carmen Bartic, Gustaaf Borghs, 2012, ACS nano.

Three-Dimensional Analysis of Carbon Nanotube Networks in Interconnects by Electron Tomography without Missing Wedge Artifacts

Gustaaf Van Tendeloo, Hugo Bender, Thomas Hantschel, 2010, Microscopy and Microanalysis.

Ge nFET with high electron mobility and superior PBTI reliability enabled by monolayer-Si surface passivation and La-induced interface dipole formation

L. Witters, N. Collaert, S. Sioncke, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Si-passivated Ge nMOS gate stack with low Dit and dipole-induced superior PBTI reliability using 3D-compatible ALD caps and high-pressure anneal

K. Wostyn, J. Geypen, H. Bender, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Processing Technologies for Advanced Ge Devices

Naoto Horiguchi, Jerome Mitard, Liesbeth Witters, 2017 .

Record GmSAT/SSSAT and PBTI Reliability in Si-Passivated Ge nFinFETs by Improved Gate-Stack Surface Preparation

K. Wostyn, H. Dekkers, D. Mocuta, 2019, IEEE Transactions on Electron Devices.

Analysis of admittance measurements of MOS capacitors on CVD grown bilayer MoS2

I. Radu, M. Heyns, D. Lin, 2019, 2D Materials.

Synthesis of large area carbon nanosheets for energy storage applications

Iuliana Radu, Stefan De Gendt, Philippe M. Vereecken, 2013 .

Interface admittance measurement and simulation of dual gated CVD WS2 MOSCAPs: mapping the DIT(E) profile

I. Radu, M. Heyns, D. Cott, 2021 .

Carbon nanotube interconnects: Electrical characterization of 150 nm CNT contacts with Cu damascene top contact

M. H. van der Veen, G. Groeseneken, C. Huyghebaert, 2011, 2011 IEEE International Interconnect Technology Conference.

Synthesis of a 3D network of Pt nanowires by atomic layer deposition on a carbonaceous template.

C. Detavernier, Shao-Ren Deng, S. Bals, 2014, Nanoscale.

Atomic layer deposition of high-k dielectrics on single-walled carbon nanotubes: a Raman study

H. Wong, Zhenan Bao, S. Van Elshocht, 2013, Nanotechnology.

Nanostructured TiO2/carbon nanosheet hybrid electrode for high-rate thin-film lithium-ion batteries

C. Detavernier, Shao-Ren Deng, P. Vereecken, 2014, Nanotechnology.

Atomic layer deposition-based synthesis of photoactive TiO2 nanoparticle chains by using carbon nanotubes as sacrificial templates

C. Detavernier, S. Lenaerts, Shao-Ren Deng, 2014, 1410.5942.

Preparation of oriented mesoporous carbon nano-filaments within the pores of anodic alumina membranes.

T. Bein, M. Morris, N. Petkov, 2006, Journal of the American Chemical Society.

Electrical characterization of CNT contacts with Cu Damascene top contact

G. Beyer, M. Heyns, C. Huyghebaert, 2013 .

Large Area Carbon Nanosheet Capacitors

I. Radu, A. Stesmans, M. Alsalhi, 2014 .

Saturation Photo-Voltage Methodology for Semiconductor/Insulator Interface Trap Spectroscopy

T. Ivanov, A. Stesmans, H. Arimura, 2016 .

Paramagnetic oxide traps in Sc2O3-passivated (100)Ge/HfO2 stacks

A. Thean, A. Stesmans, H. Arimura, 2015 .

Photocatalytic acetaldehyde oxidation in air using spacious TiO2 films prepared by atomic layer deposition on supported carbonaceous sacrificial templates

C. Detavernier, S. Lenaerts, Shao-Ren Deng, 2014, 1410.4405.

Atomic layer deposition-based synthesis of photoactive TiO2 nanoparticle chains by using carbon nanotubes as sacrificial templates

C. Detavernier, S. Lenaerts, Shao-Ren Deng, 2014, 1410.5942.

Electrodeposition and Characterization of Manganese Dioxide Thin Films on Silicon Pillar Arrays for 3D Thin-Film Lithium-Ion Batteries

C. Huyghebaert, A. Radisic, P. Vereecken, 2014 .

Electrical and structural characterization of 150 nm CNT contacts with Cu damascene top metallization

M. H. van der Veen, C. Huyghebaert, Z. Tokei, 2012, 2012 IEEE International Interconnect Technology Conference.

Porous nanostructured metal oxides synthesized through atomic layer deposition on a carbonaceous template followed by calcination

C. Detavernier, Shao-Ren Deng, S. Bals, 2015, 1502.07233.

A 2nd Generation of 14/16nm-node compatible strained-Ge pFINFET with improved performance with respect to advanced Si-channel FinFETs

H. Mertens, R. Ritzenthaler, A. Hikavyy, 2016, 2016 IEEE Symposium on VLSI Technology.

Electrochemical Tailoring of Catalyst Nanoparticles for CNT Spatial-Dimension Control

K. Maex, M. Heyns, S. Gendt, 2010 .

Diels-Alder reactions between maleic anhydride and furan derivatives in supercritical CO2

J. Holmes, D. Cott, K. Ziegler, 2005 .

Self-limiting electropolymerization of ultrathin, pinhole-free poly(phenylene oxide) films on carbon nanosheets

M. Heyns, R. Muller, P. Vereecken, 2015 .

Integration of Vertical Carbon Nanotube Bundles for Interconnects

M. Heyns, G. Groeseneken, K. Kellens, 2009, ECS Transactions.

Growth and characterization of horizontally suspended CNTs across TiN electrode gaps

G. Groeseneken, S. Gendt, P. Vereecken, 2010, Nanotechnology.

Dual Role of Hydrogen in Low Temperature Plasma Enhanced Carbon Nanotube Growth

S. Gendt, P. Vereecken, D. Cott, 2015 .

Optimization of multi-walled carbon nanotube–metal contacts by electrical stressing

J. Boland, A. Verhulst, D. Cott, 2010, Nanotechnology.

Nucleation and growth mechanism for atomic layer deposition of Al2O3 on two-dimensional WS2 monolayer

C. Dee, A. Delabie, Sireesha Pedaballi, 2023, Journal of Vacuum Science & Technology A.

High‐density growth of horizontally aligned carbon nanotubes for interconnects

J. Robertson, Guofang Zhong, Can Zhang, 2010 .

Growth of vertically-aligned carbon nanotube forests on conductive cobalt disilicide support

J. Robertson, B. Hickey, Guofang Zhong, 2010 .

Direct correlation between the measured electrochemical capacitance, wettability and surface functional groups of CarbonNanosheets

M. Heyns, P. Vereecken, D. Cott, 2014 .

Wafer-Level Electrical Evaluation of Vertical Carbon Nanotube Bundles as a Function of Growth Temperature

C. Huyghebaert, X. Ke, D. Cott, 2013 .

Integration and electrical characterization of carbon nanotube via interconnects

M. Heyns, G. Groeseneken, Yunlong Li, 2011 .

Measuring the electrical resistivity and contact resistance of vertical carbon nanotube bundles for application as interconnects

Guido Groeseneken, Marc Heyns, Stefan De Gendt, 2011, Nanotechnology.

ALD of Al 2 O 3 for Carbon Nanotube vertical interconnect and its impact on the electrical properties

O. Richard, H. Bender, M. Heyns, 2011 .

Wafer-scale integration of double gated WS2-transistors in 300mm Si CMOS fab

T. Schram, K. Devriendt, I. Radu, 2020, 2020 IEEE International Electron Devices Meeting (IEDM).

Dual gate synthetic MoS2 MOSFETs with 4.56µF/cm2 channel capacitance, 320µS/µm Gm and 420 µA/µm Id at 1V Vd/100nm Lg

I. Radu, S. Sutar, Q. Smets, 2021, 2021 IEEE International Electron Devices Meeting (IEDM).

Dual gate synthetic WS2 MOSFETs with 120μS/μm Gm 2.7μF/cm2 capacitance and ambipolar channel

I. Radu, D. Lin, S. Sutar, 2020, 2020 IEEE International Electron Devices Meeting (IEDM).

Editors' Choice—Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures

B. Douhard, O. Richard, D. Mocuta, 2018 .

A record GmSAT/SSSAT and PBTI reliability in Si-passivated Ge nFinFETs by improved gate stack surface preparation

K. Wostyn, D. Mocuta, N. Horiguchi, 2019, 2019 Symposium on VLSI Technology.

Scaling of double-gated WS2 FETs to sub-5nm physical gate length fabricated in a 300mm FAB

H. Mertens, Z. Tao, T. Schram, 2021, International Electron Devices Meeting.

Impact of gate stack processing on the hysteresis of 300 mm integrated WS2 FETs

T. Schram, G. Kar, B. Kaczer, 2023, 2023 IEEE International Reliability Physics Symposium (IRPS).

Understanding charge traps for optimizing Si-passivated Ge nMOSFETs

B. Kaczer, L. Witters, N. Collaert, 2016, 2016 IEEE Symposium on VLSI Technology.

Toward high-performance and reliable Ge channel devices for 2 nm node and beyond

A. Hikavyy, E. Rosseel, N. Horiguchi, 2020, 2020 IEEE International Electron Devices Meeting (IEDM).

Electrical improvement of CNT contacts with Cu damascene top metallization

M. H. van der Veen, C. Huyghebaert, Z. Tokei, 2013, 2013 IEEE International Interconnect Technology Conference - IITC.

Growth and Integration of High-Density CNT for BEOL Interconnects

M. Heyns, G. Groeseneken, A. Verhulst, 2008 .

Growth of vertically-aligned carbon nanotube forests on conductive cobalt disilicide support

J. Robertson, B. Hickey, Guofang Zhong, 2010 .

Growth and Electrical Characterization of Horizontally Aligned CNTs

P. Vereecken, D. Cott, C. Santini, 2009, ECS Transactions.

Growth of carbon nanotubes as horizontal interconnects

J. Robertson, Can Zhang, P. Vereecken, 2008 .

2D materials: roadmap to CMOS integration

C. Huyghebaert, A. Leonhardt, D. Lin, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

Wafer‐Scale Integration of Single Layer Graphene Electro‐Absorption Modulators in a 300 mm CMOS Pilot Line

K. Vandersmissen, C. Huyghebaert, A. Centeno, 2023, Laser & Photonics Reviews.

Wafer-scale graphene electro-absorption modulators fabricated in a 300 mm CMOS platform

K. Vandersmissen, C. Huyghebaert, A. Centeno, 2023, Photonex.

Graphene electro-absorption modulators integrated at wafer-scale in a CMOS fab

Cedric Huyghebaert, Joris Van Campenhout, Marianna Pantouvaki, 2021, 2021 Symposium on VLSI Circuits.