J. Greenlee

发表

Study of cation-dominated ionic-electronic materials and devices

J. Greenlee, 2014 .

Comparison of Interfacial and Bulk Ionic Motion in Analog Memristors

J. Greenlee, W. L. Calley, M. Moseley, 2013, IEEE Transactions on Electron Devices.

Effect of Reduced Extended Defect Density in MOCVD Grown AlGaN/GaN HEMTs on Native GaN Substrates

K. Hobart, A. Koehler, T. Anderson, 2016, IEEE Electron Device Letters.

Radiation Effects on LiNbO $_2$ Memristors for Neuromorphic Computing Applications

peixiong zhao, M. Alles, J. Bi, 2013, IEEE Transactions on Nuclear Science.

Ultraviolet detector based on graphene/SiC heterojunction

Jordan D. Greenlee, David I. Shahin, K. Hobart, 2015 .

Characterization of an Mg‐implanted GaN p–i–n diode

K. Hobart, T. Anderson, J. Greenlee, 2015 .

Symmetric Multicycle Rapid Thermal Annealing: Enhanced Activation of Implanted Dopants in GaN

Jordan D. Greenlee, Francis J. Kub, Jennifer K. Hite, 2015 .

Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties

K. Hobart, C. Eddy, T. Anderson, 2014 .

Comparison of AlN encapsulants for high-temperature GaN annealing

K. Hobart, C. Eddy, T. Anderson, 2014 .

Characterization of a selective AlN wet etchant

Jordan D. Greenlee, Francis J. Kub, Andrew D. Koehler, 2015 .

Defect reduction in MBE-grown AlN by multicycle rapid thermal annealing

Jordan D. Greenlee, K. Hobart, A. Koehler, 2016, Electronic Materials Letters.

Improvements in the Annealing of Mg Ion Implanted GaN and Related Devices

Jordan D. Greenlee, Francis J. Kub, Jennifer K. Hite, 2016, IEEE Transactions on Semiconductor Manufacturing.

Elimination of Basal Plane Dislocations in Epitaxial 4H-SiC via Multicycle Rapid Thermal Annealing

J. Freitas, P. Klein, J. Greenlee, 2015 .

Process optimization of multicycle rapid thermal annealing of Mg-implanted GaN

K. Hobart, C. Eddy, T. Anderson, 2014, 2014 IEEE Workshop on Wide Bandgap Power Devices and Applications.

Temporary Bonding with Polydimethylglutarimide Based Lift Off Resist as a Layer Transfer Platform

H. Baumgart, K. Hobart, A. Koehler, 2015 .

In situ Auger probe enabling epitaxy composition control of alloys by elemental surface analysis

J. Greenlee, W. L. Calley, M. Moseley, 2013 .

Hyperspectral Electroluminescence Characterization of OFF-State Device Characteristics in Proton Irradiated High Voltage AlGaN/GaN HEMTs

K. Hobart, A. Koehler, T. Anderson, 2016 .

Liquid Phase Electro-Epitaxy of Memristive LiNbO2 Crystals

M. Tellekamp, J. Greenlee, W. Doolittle, 2014 .

Spatiotemporal drift-diffusion simulations of analog ionic memristors

Jordan D. Greenlee, M. Tellekamp, J. Greenlee, 2013 .

In-situ Oxygen x-ray Absorption Spectroscopy Investigation of the Resistance Modulation Mechanism in LiNbO2 Memristors

Jordan D. Greenlee, W. Alan Doolittle, Cherno Jaye, 2012 .

Halide based MBE of crystalline metals and oxides

J. Greenlee, W. L. Calley, W. Doolittle, 2012 .

Molecular beam epitaxy growth of niobium oxides by solid/liquid state oxygen source and lithium assisted metal-halide chemistry

M. Tellekamp, J. Greenlee, W. Doolittle, 2015 .

NbN Capping Layer for Enhanced Thermal Processing of Group III-Nitride Semiconductor Devices

R. Dupuis, K. Hobart, A. Koehler, 2017 .

Observation and control of the surface kinetics of InGaN for the elimination of phase separation

J. Greenlee, G. Namkoong, M. Moseley, 2012 .

Structural, Optical, and Electrical Characterization of Monoclinic β-Ga2O3 Grown by MOVPE on Sapphire Substrates

Jaime A. Freitas, Jordan D. Greenlee, Fritz J. Kub, 2016, Journal of Electronic Materials.

Substrate-Dependent Effects on the Response of AlGaN/GaN HEMTs to 2-MeV Proton Irradiation

Jordan D. Greenlee, Francis J. Kub, Andrew D. Koehler, 2014, IEEE Electron Device Letters.

Impact of Surface Passivation on the Dynamic ON-Resistance of Proton-Irradiated AlGaN/GaN HEMTs

David I. Shahin, K. Hobart, A. Koehler, 2016, IEEE Electron Device Letters.

Selective p-type Doping of GaN:Si by Mg Ion Implantation and Multicycle Rapid Thermal Annealing

Jordan D. Greenlee, J. Freitas, K. Hobart, 2016 .

Temporal and spatial modeling of analog memristors

Jordan Greenlee, J. Greenlee, 2011 .

(Invited) From MRTA to SMRTA: Improvements in Activating Implanted Dopants in GaN

K. Hobart, T. Anderson, J. Greenlee, 2015 .

Improved Vertical GaN Schottky Diodes with Ion Implanted Junction Termination Extension

Jordan D. Greenlee, Fritz J. Kub, Jennifer K. Hite, 2016 .

Spatial Mapping of Pristine and Irradiated AlGaN/GaN HEMTs With UV Single-Photon Absorption Single-Event Transient Technique

S. Buchner, A. Koehler, T. Anderson, 2016, IEEE Transactions on Nuclear Science.

Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs

P. Specht, K. Hobart, A. Koehler, 2015 .

Degradation mechanisms of AlGaN/GaN HEMTs on sapphire, Si, and SiC substrates under proton irradiation

P. Specht, K. Hobart, A. Koehler, 2014, 2014 IEEE Workshop on Wide Bandgap Power Devices and Applications.

Proton Radiation-Induced Void Formation in Ni/Au-Gated AlGaN/GaN HEMTs

P. Specht, K. Hobart, A. Koehler, 2014, IEEE Electron Device Letters.

Editors' Choice—On the Radiation Tolerance of AlGaN/GaN HEMTs

David I. Shahin, K. Hobart, A. Koehler, 2016 .

Comparison of AlN Encapsulants for Bulk GaN Multicycle Rapid Thermal Annealing

Jordan D. Greenlee, K. Hobart, V. Wheeler, 2015 .

(Invited) Failure Mechanisms in AlGaN/GaN HEMTs Irradiated with 2MeV Protons

P. Specht, K. Hobart, A. Koehler, 2015 .