J. Wong-Leung

P. Bhattacharya, C. Jagadish, J. Wong-Leung, 2002, 2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601).

Understanding the true shape of Au-catalyzed GaAs nanowires.

Chennupati Jagadish, Hark Hoe Tan, Hannah J. Joyce, 2014, Nano letters.

Twinning superlattice formation in GaAs nanowires.

C. Jagadish, P. Caroff, J. Wong-Leung, 2013, ACS nano.

Perovskite Photovoltaic Integrated CdS/TiO2 Photoanode for Unbiased Photoelectrochemical Hydrogen Generation.

K. Catchpole, H. Tan, C. Jagadish, 2018, ACS applied materials & interfaces.

Influence of Interface Morphology on Hysteresis in Vapor‐Deposited Perovskite Solar Cells

Jay B. Patel, M. Johnston, H. Snaith, 2017 .

Compound semiconductor nanowires for optoelectronic devices

C. Jagadish, H. Joyce, J. Wong-Leung, 2013, 2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEOPR).

Improvement of minority carrier lifetime in GaAs/AlxGa1−xAs core-shell nanowires

C. Jagadish, J. Wong-Leung, Q. Gao, 2012, COMMAD 2012.

Direct Observation of the Impurity Gettering Layers in Polysilicon-Based Passivating Contacts for Silicon Solar Cells

D. Macdonald, A. Cuevas, S. Phang, 2018 .

Impurity Gettering by Diffusion-doped Polysilicon Passivating Contacts for Silicon Solar Cells

D. Macdonald, A. Cuevas, S. Phang, 2018, 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC).

Effect of boron on formation of interstitial‐related luminescence centres in ion implanted silicon

J. McCallum, S. Charnvanichborikarn, J. Wong-Leung, 2011 .

Identification by photoluminescence and positron annihilation of vacancy and interstitial intrinsic defects in ion-implanted silicon

C. P. Burrows, J. Wong-Leung, P. G. Coleman, 2006 .

The effect of nitridation on the polarity and optical properties of GaN self-assembled nanorods.

H. Tan, C. Jagadish, P. Caroff, 2018, Nanoscale.

InP-based radial heterostructures grown on [100] nanowires

H. Tan, C. Jagadish, P. Caroff, 2014, 2014 Conference on Optoelectronic and Microelectronic Materials & Devices.

Polarization tunable, multicolor emission from core-shell photonic III-V semiconductor nanowires.

H. Tan, C. Jagadish, J. Wong-Leung, 2012, Nano letters.

Nanoindentation-induced deformation of Ge

M. Swain, J. Wong-Leung, P. Munroe, 2002 .

Mechanical Deformation of Crystalline Silicon During Nanoindentation

M. Swain, J. Wong-Leung, P. Munroe, 2000 .

Flow modulation epitaxy of hexagonal boron nitride

C. Jagadish, J. Wong-Leung, M. Lysevych, 2018, 2D Materials.

High Efficiency Perovskite‐Silicon Tandem Solar Cells: Effect of Surface Coating versus Bulk Incorporation of 2D Perovskite

K. Catchpole, B. Richards, Yun Liu, 2020, Advanced Energy Materials.

Selective Intermixing of InGaAs/GaAs Quantum Dot Infrared Photodetectors

C. Jagadish, I. McKerracher, G. Jolley, 2011, IEEE Journal of Quantum Electronics.

Light Absorption and Recycling in Hybrid Metal Halide Perovskite Photovoltaic Devices

Jay B. Patel, Nakita K. Noel, M. Johnston, 2020, Advanced Energy Materials.

InGaAsP as a Promising Narrow Band Gap Semiconductor for Photoelectrochemical Water Splitting.

H. Tan, C. Jagadish, Y. Wan, 2019, ACS applied materials & interfaces.

CdS/TiO2 photoanodes via solution ion transfer method for highly efficient solar hydrogen generation

H. Tan, C. Jagadish, P. Narangari, 2018 .

Ultralow surface recombination velocity in InP nanowires probed by terahertz spectroscopy.

Chennupati Jagadish, H. Hoe Tan, Suriati Paiman, 2012, Nano letters.

Effects of rapid thermal annealing on device characteristics of InGaAs∕GaAs quantum dot infrared photodetectors

P. Harrison, H. Tan, C. Jagadish, 2006 .

Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector

P. Bhattacharya, C. Jagadish, J. Wong-Leung, 2003 .

Understanding the role of facets and twin defects in the optical performance of GaAs nanowires for laser applications.

H. Tan, C. Jagadish, J. Cairney, 2021, Nanoscale horizons.

Engineering III–V Nanowires for Optoelectronics: From Visible to Terahertz

Stephanie O. Adeyemo, Djamshid A. Damry, H. Tan, 2019, OSA Advanced Photonics Congress (AP) 2019 (IPR, Networks, NOMA, SPPCom, PVLED).

Semiconductor nanowires in terahertz photonics: From spectroscopy to ultrafast nanowire-based devices

Djamshid A. Damry, H. Tan, C. Jagadish, 2017, 2017 10th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies (UCMMT).

InxGa1−xAs nanowires with uniform composition, pure wurtzite crystal phase and taper-free morphology

H. Tan, C. Jagadish, M. Johnston, 2015, Nanotechnology.

Improving the Morphology and Crystal Quality of AlN Grown on Two-Dimensional hBN

H. Tan, C. Jagadish, J. Wong-Leung, 2020 .

Simultaneous Selective-Area and Vapor-Liquid-Solid Growth of InP Nanowire Arrays.

H. Tan, C. Jagadish, P. Caroff, 2016, Nano letters.

Insights into Twinning Formation in Cubic and Tetragonal Multi-cation Mixed-Halide Perovskite

J. Wong-Leung, The Duong, K. Weber, 2020 .

Polarity-driven 3-fold symmetry of GaAs/AlGaAs core multishell nanowires.

J. Etheridge, H. Tan, C. Jagadish, 2013, Nano letters.

Photoluminescence Excitation Spectroscopy of Diffused Layers on Crystalline Silicon Wafers

D. Macdonald, Hieu T. Nguyen, S. Phang, 2016, IEEE Journal of Photovoltaics.

Controlling the morphology, composition and crystal structure in gold-seeded GaAs(1-x)Sb(x) nanowires.

H. Tan, C. Jagadish, P. Caroff, 2015, Nanoscale.

Tunable Polarity in a III–V Nanowire by Droplet Wetting and Surface Energy Engineering

H. Tan, C. Jagadish, P. Caroff, 2015, Advanced materials.

Effect of implant temperature on secondary defects created by MeV Sn implantation in silicon

C. Jagadish, J. Wong-Leung, J. Gerald, 2001 .

Effective Passivation of InGaAs Nanowires for Telecommunication Wavelength Optoelectronics

H. Tan, C. Jagadish, Hieu T. Nguyen, 2022, Advanced Optical Materials.

A transmission electron microscopy study of defects formed through the capping layer of self-assembled InAs/GaAs quantum dot samples

H. Tan, C. Jagadish, J. Wong-Leung, 2006 .

Tuning the crystal structure and optical properties of selective area grown InGaAs nanowires

H. Tan, C. Jagadish, Hieu T. Nguyen, 2021, Nano Research.

Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon

C. Jagadish, B. Johnson, J. McCallum, 2012 .

Electron-pinned defect-dipoles for high-performance colossal permittivity materials.

Hua Chen, Yun Liu, Jennifer Wong-Leung, 2013, Nature materials.

Non-Equilibrium Formation Of Silicon Nitride During Both Ball Milling And Ion Bombardment

J. Wong-Leung, M. Giersig, Z. L. Li, 1997 .

Phase perfection in zinc Blende and Wurtzite III-V nanowires using basic growth parameters.

Chennupati Jagadish, Hannah J Joyce, Jennifer Wong-Leung, 2010, Nano letters.

Ion-Implantation-Induced Extended Defect Formation in (0001) and (1120) 4H-SiC

J. Wong-Leung, B. Svensson, M. Linnarsson, 2005 .

Ultra-micro-indentation of silicon and compound semiconductors with spherical indenters

M. Swain, J. Wong-Leung, M. Swain, 1999 .

A comparison of extended defect formation induced by ion implantation in (0 0 0 1) and (1 1 2 0) 4

J. Wong-Leung, B. Svensson, M. Linnarsson, 2003 .

Effect of crystal orientation on the implant profile of 60 keV Al into 4H-SiC crystals

J. Wong-Leung, B. Svensson, M. Janson, 2003 .

Analysis of semiconductors by ion channelling: Applications and pitfalls

H. Tan, J. Wong-Leung, J. Davies, 1998 .

Rutherford backscattering and channeling study of Au trapped at cavities in silicon

J. Wong-Leung, James S. Williams, 1996 .

The role of Fe on the crystallisation of α-Si3N4 from amorphous Si–N formed by ion implantation

J. Wong-Leung, P. Deenapanray, J. Gerald, 1999 .

Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon

C. Jagadish, J. Wong-Leung, J. Zou, 2000 .

Gettering of copper to hydrogen‐induced cavities in silicon

R. Elliman, J. Wong-Leung, M. Petravić, 1995 .

Direct observation of voids in the vacancy excess region of ion bombarded silicon

J. Wong-Leung, M. Conway, B. Williams, 2001 .

Voids and Nanocavities in Silicon

J. Wong-Leung, James S. Williams, 2009 .

Ion irradiation-induced disordering of semiconductors: defect structures and applications

C. Jagadish, J. Wong-Leung, H. Tan, 2005 .

Interaction of defects and metals with nanocavities in silicon

H. Bernas, J. Wong-Leung, Xianfang Zhu, 2001 .

Interactions of Point Defects and Impurities With Open Volume Defects in Silicon

H. Bernas, J. Wong-Leung, M. Conway, 2010 .

Gettering of platinum and silver to cavities formed by hydrogen implantation in silicon

J. Wong-Leung, A. Kinomura, M. Petravić, 1997 .

Equilibrium shape of nano-cavities in H implanted ZnO

C. Jagadish, J. Wong-Leung, B. Svensson, 2015 .

Defect formation and thermal stability of H in high dose H implanted ZnO

C. Jagadish, J. Wong-Leung, P. Parkinson, 2013 .

Self-assembled Au nanoparticles in SiO2 by ion implantation and wet oxidation

S. Charnvanichborikarn, J. Wong-Leung, James Williams, 2009 .

Achieving a narrow size distribution of Au particles at a precise depth in SiO2 by segregation of Au precipitates

S. Charnvanichborikarn, J. Wong-Leung, M. Conway, 2009, Nanotechnology.

The role of oxygen on the stability of gettering of metals to cavities in silicon

D. Eaglesham, D. Jacobson, J. Wong-Leung, 1999 .

Efficient gettering of low concentrations of copper contamination to hydrogen induced nanocavities in silicon

J. Wong-Leung, A. Kinomura, Y. Nakano, 1998 .

Microstructural difference between platinum and silver trapped in hydrogen induced cavities in silicon

J. Wong-Leung, A. Kinomura, M. Petravić, 1998 .

The influence of cavities and point defects on boron diffusion in silicon

J. Wong-Leung, M. Petravić, James S. Williams, 1998 .

The Influence of Cavities and Point Defects on Cu Gettering and B'Diffusion in Si

J. Wong-Leung, M. Petravić, James S. Williams, 1997 .

Gettering of metals to nanocavities in silicon

J. Wong-Leung, A. Kinomura, M. Petravić, 1996, 1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings.

Defect Evolution in Hydrogen Implanted Silicon

J. Wong-Leung, M. Petravić, C. Ascheron, 1996 .

Diffusion and trapping of Au to cavities induced by H-implantation in Si

J. Wong-Leung, E. Nygren, James S. Williams, 1995 .

Transient Diffusion and Gettering of Au and Cu to Cavities in Si

J. Wong-Leung, E. Nygren, James S. Williams, 1995 .

Gettering of Au to dislocations and cavities in silicon

J. Wong-Leung, E. Nygren, James S. Williams, 1995 .

Direct correlation of R-line luminescence with rod-like defect evolution in ion-implanted and annealed silicon

C. Jagadish, S. Charnvanichborikarn, J. Wong-Leung, 2011 .

Effect of ion mass on the evolution of extended defects during annealing of MeV ion-implanted p-type Si

C. Jagadish, J. Wong-Leung, J. Gerald, 1999 .

Electrical characterization of the threshold fluence for extended defect formation in p-type silicon implanted with MeV Si ions

C. Jagadish, J. Wong-Leung, J. Gerald, 1998 .

Fluence, flux, and implantation temperature dependence of ion-implantation-induced defect production in 4H-SiC

A. Hallén, C. Jagadish, J. Wong-Leung, 2005 .

Mechanical deformation of InP and GaAs by spherical indentation

M. Swain, J. Wong-Leung, P. Munroe, 2001 .

Transmission electron microscopy observation of deformation microstructure under spherical indentation in silicon

M. Swain, J. Wong-Leung, P. Munroe, 2000 .

Low loss, thin p-clad 980-nm InGaAs semiconductor laser diodes with an asymmetric structure design

H. Tan, C. Jagadish, J. Wong-Leung, 2003 .

Comparison of the structural properties of Zn-face and O-face single crystal homoepitaxial ZnO epilayers grown by RF-magnetron sputtering

J. Wong-Leung, A. Azarov, B. Svensson, 2017 .

Engineering the Photoresponse of InAs Nanowires.

Chennupati Jagadish, Abhay A Sagade, Stephan Hofmann, 2017, ACS applied materials & interfaces.

Solubility limits of dopants in 4H–SiC

U. Zimmermann, C. Jagadish, J. Wong-Leung, 2003 .

Exploring the band structure of Wurtzite InAs nanowires using photocurrent spectroscopy

H. Jackson, H. Tan, C. Jagadish, 2019, Nano Research.

Multiwavelength Single Nanowire InGaAs/InP Quantum Well Light-Emitting Diodes.

H. Tan, C. Jagadish, Yuerui Lu, 2019, Nano letters.

Long minority carrier lifetime in Au-catalyzed GaAs/AlxGa1−xAs core-shell nanowires

Chennupati Jagadish, Jennifer Wong-Leung, Qiang Gao, 2012 .

The role of arsine in the self-assembled growth of InAs∕GaAs quantum dots by metal organic chemical vapor deposition

Chennupati Jagadish, Hark Hoe Tan, Jennifer Wong-Leung, 2006 .

Identification of Hydrogen Related Defects in Proton Implanted Float-zone Silicon

A. Hallén, C. Jagadish, J. Wong-Leung, 2003 .

Suppression of interdiffusion in GaAs/AlGaAs quantum-well structure capped with dielectric films by deposition of gallium oxide

Chennupati Jagadish, Hark Hoe Tan, Lap Van Dao, 2002 .

Engineering III–V Semiconductor Nanowires for Device Applications

H. Tan, C. Jagadish, S. Karuturi, 2019, Advanced materials.

Anomalous diffusion of intrinsic defects in K+ implanted ZnO using Li as tracer

C. Jagadish, J. Wong-Leung, B. Svensson, 2012 .

Critical Temperature for the Conversion from Wurtzite to Zincblende of the Optical Emission of InAs Nanowires

F. Bechstedt, M. Capizzi, A. Polimeni, 2017 .

Mechanical deformation in silicon by micro-indentation

M. Swain, J. Wong-Leung, P. Munroe, 2001 .

Selective-area epitaxy of pure wurtzite InP nanowires: high quantum efficiency and room-temperature lasing.

H. Tan, C. Jagadish, P. Caroff, 2014, Nano letters.

Tailoring GaAs, InAs, and InGaAs Nanowires for Optoelectronic Device Applications

C. Jagadish, Jennifer Wong-Leung, Qiang Gao, 2011, IEEE Journal of Selected Topics in Quantum Electronics.

Growth and Characterization of InAs/GaAs Quantum Dots and Diode Lasers

H. Tan, C. Jagadish, J. Wong-Leung, 2006, 2006 International Conference on Nanoscience and Nanotechnology.

Highly regular rosette-shaped cathodoluminescence in GaN self-assembled nanodisks and nanorods

H. Tan, C. Jagadish, Bijun Zhao, 2020, Nano Research.

Understanding the Chemical and Structural Properties of Multiple-Cation Mixed Halide Perovskite

W. Rickard, J. Wong-Leung, The Duong, 2019, The Journal of Physical Chemistry C.

Nanowires grown on InP (100): growth directions, facets, crystal structures, and relative yield control.

H. Tan, C. Jagadish, P. Caroff, 2014, ACS nano.

Zn precipitation and Li depletion in Zn implanted ZnO

C. Jagadish, J. Wong-Leung, B. Svensson, 2016 .

Acceptor-like deep level defects in ion-implanted ZnO

C. Jagadish, J. Wong-Leung, B. Svensson, 2012 .

Unraveling the influence of CsCl/MACl on the formation of nanotwins, stacking faults and cubic supercell structure in FA-based perovskite solar cells

G. Andersson, J. Wong-Leung, K. Weber, 2021 .

The formation, migration, agglomeration and annealing of vacancy-type defects in self-implanted Si

J. Wong-Leung, G. Davies, R. Harding, 2007 .

Photoluminescence response of ion-implanted silicon

C. P. Burrows, J. Wong-Leung, R. Harding, 2006 .

Effect of boron on interstitial-related luminescence centers in silicon

C. Jagadish, B. Johnson, J. McCallum, 2010 .

Vacancy and interstitial depth profiles in ion-implanted silicon

A. Hallén, P. Pellegrino, C. Jagadish, 2003 .

Point defect engineered Si sub-bandgap light-emitting diodes

Federico Capasso, Yu Yang, Jiming Bao, 2007, SPIE Micro + Nano Materials, Devices, and Applications.

Ion implantation effects in silicon with high carbon content characterised by photoluminescence

J. Wong-Leung, G. Davies, R. Harding, 2003 .

Proton Irradiation Induced Intermixing in In_xGa_1-xAs/InP Quantum Wells

L. Dao, H. Tan, C. Jagadish, 2004, Conference on Optoelectronic and Microelectronic Materials and Devices, 2004..

Proximity gettering of Au to ion beam induced defects in silicon

J. Poate, D. Eaglesham, D. Jacobson, 1995 .

How InAs crystal phase affects the electrical performance of InAs nanowire FETs

A. R. Ullah, A. Micolich, H. Tan, 2014, 2014 Conference on Optoelectronic and Microelectronic Materials & Devices.

Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors

A. R. Ullah, A. Micolich, C. Jagadish, 2013, 1306.4394.

Growth of straight InAs-on-GaAs nanowire heterostructures.

Chennupati Jagadish, Jonas Johansson, Hannah J Joyce, 2011, Nano letters.

Cathodoluminescence visualisation of local thickness variations of GaAs/AlGaAs quantum-well tubes on nanowires

J. Etheridge, H. Tan, C. Jagadish, 2020, Nanotechnology.

Ion implantation induced defects in ZnO

C. Jagadish, J. Wong-Leung, B. Svensson, 2012 .

Capture cross sections of the acceptor level of iron–boron pairs in p-type silicon by injection-level dependent lifetime measurements

Jennifer Wong-Leung, Andres Cuevas, D. Macdonald, 2001 .

Anderson-like localization in ultrathin nanocomposite alloy films on polymeric substrates

Peter J. Murphy, Kamil Zuber, J. Wong-Leung, 2012 .

Effects of high temperature annealing on defects and luminescence properties in H implanted ZnO

C. Jagadish, J. Wong-Leung, B. Svensson, 2014 .

Role of defects and grain boundaries in the thermal response of wafer-scale hBN films

C. Jagadish, J. Wong-Leung, D. Chugh, 2020, Nanotechnology.

Defect formation due to the crystallization of deep amorphous volumes formed in silicon by mega electron volt (MeV) ion implantation

J. McCallum, J. Wong-Leung, A. Liu, 2001 .

The crystallisation of deep amorphous wells in silicon produced by ion implantation

J. McCallum, J. Wong-Leung, Amelia C. Y. Liu, 2001 .

Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation

P. Pellegrino, C. Jagadish, J. Wong-Leung, 2001 .

Separation of Vacancy and Interstitial Depth Profiles in Proton- and Boron-Implanted Silicon

A. Hallén, P. Pellegrino, C. Jagadish, 2002 .

Ion mass effect on vacancy-related deep levels in Si induced by ion implantation

C. Jagadish, J. Wong-Leung, B. Svensson, 2002 .

Comparative study of the electrical and structural characterization of the sub-threshold damage in n- and p-type Si implanted with MeV ions

C. Jagadish, J. Wong-Leung, J. Fitzgerald, 1998, 1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140).

Tuning the bandgap of InAs quantum dots by selective-area MOCVD

H. Tan, C. Jagadish, J. Wong-Leung, 2008 .

InAs quantum dots grown on InGaAs buffer layers by metal-organic chemical vapor deposition

H. Tan, C. Jagadish, J. Wong-Leung, 2005 .

Formation of precipitates in heavily boron doped 4H-SiC

J. Wong-Leung, M. Linnarsson, N. Nordell, 2006 .

InAs nanowire arrays for room-temperature ultra-broadband infrared photodetection.

Weiqi Jin, H. Tan, C. Jagadish, 2023, Nanoscale.

Suppression of ion-implantation induced porosity in germanium by a silicon dioxide capping layer

J. Wong-Leung, D. Pastor, M. Aziz, 2016 .

Ion Implantation Processing and Related Effects in SiC

A. Hallén, C. Jagadish, J. Wong-Leung, 2006 .