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High mobility SiGe/Si transistor structures on sapphire substrates using ion implantation

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Growth and characterization of superconducting V3Si on Si and Al2O3 by molecular beam epitaxial techniques

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Characterization of Si (sub X)Ge (sub 1-x)/Si Heterostructures for Device Applications Using Spectroscopic Ellipsometry

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High frequency performance of Sb-heterostructure millimeter-wave diodes

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Fabrication and characterization of electrostatic Si∕SiGe quantum dots with an integrated read-out channel

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Deep-level transient spectroscopy of Si/Si1–x–yGexCy heterostructures

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Evidence of segregation in (100) strained Si1−xGex alloys grown at low temperature by molecular beam epitaxy

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Sb-heterostructure millimeter-wave zero-bias diodes

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Characterization of High Ge Content SiGe Heterostructures and Graded Alloy Layers Using Spectroscopic Ellipsometry

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Ellipsometric study of Si(0.5)Ge(0.5)/Si strained-layer superlattices

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High mobility SiGe/Si n-type structures and field effect transistors on sapphire substrates

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Temperature dependent minority electron mobilities in strained Si/sub 1-x/Ge/sub x/ (0.2/spl les/x/spl les/0.4) layers

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Temperature Dependent Minority Electron Mobilities in Strained Si Ge Layers

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P-type SiGe/Si Superlattice Cooler

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Sputtered gold as an effective Schottky gate for strained Si∕SiGe nanostructures

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High Mobility SiGe/Si n-MODFET Structures and Devices on Sapphire Substrates

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High Electron Mobility in SiGe/Si n-MODFET Structures on Sapphire Substrates

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Strain relaxation kinetics in Si1–xGex/Si heterostructures

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High cooling power density SiGe/Si microcoolers

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Use of Low Temperature Si MBE Growth Techniques for High Performance SiGe/Si Electronics

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Fast and High-Fidelity State Preparation and Measurement in Triple-Quantum-Dot Spin Qubits

Aaron M. Jones, R. Lanza, A. Hunter, 2021, PRX Quantum.

Substitutional C fraction and the influence of C on Si dimer diffusion in Si1−yCy alloys grown on (001) and (118) Si

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Measurement of the valence band offset in novel heterojunction systems: Si/Ge (100) and AlSb/ZnTe (100)

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Stabilizing the surface morphology of Si1−x−yGexCy/Si heterostructures grown by molecular beam epitaxy through the use of a silicon-carbide source

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Observation of a (2×8) surface reconstruction on Si1−xGex alloys grown on (100) Si by molecular‐beam epitaxy

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Thermal conductivity of Si/SiGe and SiGe/SiGe superlattices

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Improved growth morphology of Si–Ge–C heterostructures through the use of Sb surfactant-assisted molecular beam epitaxy

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Measurement of valley splitting in high-symmetry Si/SiGe quantum dots

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Cooling Power Density of SiGe/Si Superlattice Micro Refrigerators

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High Cooling Power Density of SiGe/Si Superlattice Microcoolers

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Reliability of microwave SiGe/Si heterojunction bipolar transistors

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X- and Ku-band amplifiers based on Si/SiGe HBT's and micromachined lumped components

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Thermal Conductivity of Si/SiGe Superlattices

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On-chip high speed localized cooling using superlattice microrefrigerators

Yan Zhang, Gehong Zeng, A. Shakouri, 2006, IEEE Transactions on Components and Packaging Technologies.

Band offsets in Si/Si1−x−yGexCy heterojunctions measured by admittance spectroscopy

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Long-term reliability of Si-Si/sub 0.7/Ge/sub 0.3/-Si HBTs from accelerated lifetime testing

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Measurement of Seebeck coefficient perpendicular to SiGe superlattice

Yan Zhang, A. Shakouri, R. Singh, 2002, Twenty-First International Conference on Thermoelectrics, 2002. Proceedings ICT '02..

THE EFFECT OF DEFECTS AND ACOUSTIC IMPEDANCE MISMATCH ON HEAT CONDUCTION SIGE BASED SUPERLATTICES

A. Majumdar, A. Shakouri, A. Abramson, 2002 .

Resonant Tunneling Diodes

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Direct electrical measurement of the electron g factor in ultra-thin InGaAs/InP single quantum wells

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Single-Electron-Spin Measurements in Si-Based Semiconductor Nanostructures

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Materials optimization for high power silicon germanium heterostructure bipolar transistors at X-band frequencies

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