H. Xin

发表

Self-assembled GaInNAs quantum dots for 1.3 and 1.55 μm emission on GaAs

Charles W. Tu, C. Tu, M. Sopanen, 2000 .

Pulsed laser deposition of PZT/BaRuO3 BI-Layered films on silicon substrate

M. Okuyama, Chenglu Lin, Lirong Zheng, 1997 .

Synthesis of InNxP1−x thin films by N ion implantation

J. Beeman, E. Haller, C. Tu, 2001 .

Formation of diluted III–V nitride thin films by N ion implantation

J. Beeman, E. Haller, C. Tu, 2001 .

Heavily nitrogen-doped III-V semiconductors for high-efficiency solar cells

S. K. Deb, C. Tu, H. Xin, 2000, Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036).

Alloy states in dilute GaAs1-xNx alloys (x<1%)

C. Tu, W. Ge, H. Xin, 2003 .

Scaling of band-gap reduction in heavily nitrogen doped GaAs

C. Tu, H. Xin, A. Mascarenhas, 2001 .

Direct Observation of NN Pairs Transfer in GaP1-xNx （x=0.12%）

C. Tu, H. Xin, Lu Yi-jun, 2005 .

Free carrier and/or exciton trapping by nitrogen pairs in diluteGaP1−xNx

C. Tu, M. Capizzi, A. Polimeni, 2005 .

Experimental evidence for N-induced strong coupling of host conduction band states inGaNxP1−x: Insight into the dominant mechanism for giant band-gap bowing

I. Buyanova, M. Izadifard, Weimin M. Chen, 2004 .

Photoluminescence properties of GaNP/GaP multiple quantum wells grown by gas source molecular beam epitaxy

C. Tu, H. Xin, 2000 .

Over 80% Drain Efficiency CW AlGaN/GaN HEMT Power Amplifier

H. Xin, B. Achiriloaie, A. Mkhitarian, 2008 .

Observation of quantum dot-like behavior of GaInNAs in GaInNAs/GaAs quantum wells

K. Kavanagh, C. Tu, H. Xin, 1999 .

GaInNAs/GaAs multiple quantum wells grown by gas-source molecular beam epitaxy

C. Tu, H. Xin, 1998 .

FORMATION OF BURIED CARBON NITRIDE BY HIGH-DOSE NITROGEN IMPLANTATION INTO CARBON THIN-FILM

S. Zou, Xiaohong Shi, Chenglu Lin, 1995 .

Formation of Ga interstitials in (Al,In)yGa1−yNxP1−x alloys and their role in carrier recombination

I. Buyanova, M. Izadifard, Weimin M. Chen, 2004 .

Gas-source MBE growth of Ga(In)NP/GaP structures and their applications for red light-emitting diodes

Y. G. Hong, C. Tu, H. Xin, 2001 .

GaN/sub 0.011/P/sub 0.989/-GaP double-heterostructure red light-emitting diodes directly grown on GaP substrates

C. Tu, H. Xin, R. Welty, 2000, IEEE Photonics Technology Letters.

On a possible origin of the 2.87 eV optical transition in GaNP

I. Buyanova, C. Tu, H. Xin, 2006 .

Improving properties of GaInNAs with a short-period GaInAs/GaNAs superlattice

H. Xin, C. Tu, Y. G. Hong, 2000, Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107).

Direct determination of electron effective mass in GaNAs/GaAs quantum wells

I. Buyanova, Weimin M. Chen, C. Tu, 2000 .

Temperature dependence of the GaNxP1−x band gap and effect of band crossover

I. Buyanova, Weimin M. Chen, C. Tu, 2002 .

Band anticrossing in GaP 1-x N x alloys

E. Haller, Y. G. Hong, C. Tu, 2002 .

Minority carrier transport properties of GaInNAs heterojunction bipolar transistors with 2% nitrogen

P. Asbeck, C. Tu, H. Xin, 2004 .

Evolution of the electron localization in a nonconventional alloy system GaAs1−xNx probed by high-magnetic-field photoluminescence

Y. G. Hong, C. Tu, H. Xin, 2003 .

Formation of BaTiO_3 and PbTiO_3 thin films under mild hydrothermal conditions

M. Okuyama, Chenglu Lin, Lirong Zheng, 1996 .

Mechanism for rapid thermal annealing improvements in undoped GaNxAs1−x/GaAs structures grown by molecular beam epitaxy

C. W. Tu, Irina Buyanova, P. N. Hai, 2000 .

Nitrogen passivation induced by atomic hydrogen : The GaP1-yNy case

I. Buyanova, Weimin M. Chen, C. Tu, 2003 .

Direct experimental evidence for unusual effects of hydrogen on the electronic and vibrational properties of GaNxP1−x alloys : a proof for a general property of dilute nitrides

I. Ivanov, I. Buyanova, M. Izadifard, 2004 .

Structural properties of a GaNxP1−x alloy: Raman studies

I. Buyanova, Weimin M. Chen, C. Tu, 2001 .

Electronic structure of heavily and randomly nitrogen doped GaAs near the fundamental band gap

C. Tu, H. Xin, A. Mascarenhas, 2001 .

Formation of nonradiative defects in molecular beam epitaxial GaNxAs1−x studied by optically detected magnetic resonance

I. Buyanova, Weimin M. Chen, C. Tu, 2001 .

Optical properties of GaNAs/GaAs structures

I. Buyanova, Weimin M. Chen, C. Tu, 2001 .

Recombination Processes of GaNAs/GaAs structures: Effect of Rapid Thermal Annealing

I. Buyanova, Weimin M. Chen, C. Tu, 2001 .

Optical and electronic properties of GaNAs/GaAs structures

I. Buyanova, C. Tu, E. Goldys, 2000, COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices.

Effect of growth temperature on photoluminescence of GaNAs/GaAs quantum well structures

I. Buyanova, Weimin M. Chen, C. Tu, 1999 .

Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy

C. W. Tu, Irina Buyanova, Bo Monemar, 1999 .

Optical study of localized and delocalized states in GaAsN/GaAs

C. Tu, W. Ge, P. Tan, 2003 .

Optical study of electronic states in GaAsN

J. Liu, C. Tu, W. Ge, 2002, 2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601).

Hydrogen-related effects in diluted nitrides

I. Buyanova, Weimin M. Chen, C. Tu, 2003 .

Magnetospectroscopy of high-purity InP grown by gas source molecular beam epitaxy

H. Xin, Xuezhao Shi, Can-Ming Hu, 1998 .

Effect of band anticrossing on the optical transitions in GaAs1-xNx/GaAs multiple quantum wells

E. Haller, C. Tu, Junqiao Wu, 2001 .

Gas-source molecular beam epitaxial growth and thermal annealing of GaInNAs/GaAs quantum wells

Charles W. Tu, K. Kavanagh, C. Tu, 2000 .

Band Anticrossing in III-N-V Alloys

Charles W. Tu, Eugene E. Haller, Daniel J. Friedman, 2001 .

Nitrogen incorporation in GaInP for novel heterojunction bipolar transistors

P. Asbeck, H. Xin, K. Mochizuki, 2000, Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122).

Nature of room-temperature photoluminescence in ZnO

Wladek Walukiewicz, Joel W. Ager, G. Cantwell, 2005 .

Origin of bandgap bowing in GaNP alloys

I. Buyanova, M. Izadifard, Weimin M. Chen, 2004 .

Discrete and continuous spectrum of nitrogen-induced bound states in heavily doped GaAs{sub 1-x}N{sub x}

C. Tu, H. Xin, J. Geisz, 2001 .

GaAs/Ga0.89In0.11N0.02As0.98/GaAs NpN double heterojunction bipolar transistor with low turn-on voltage

P. Asbeck, C. Tu, H. Xin, 2002 .

Annealing behavior of p-type Ga[sub 0.892]In[sub 0.108]N[sub x]As[sub 1−x] (0≤X≤0.024) grown by gas-source molecular beam epitaxy

C. Tu, M. Geva, H. Xin, 1999 .

Properties of Ga-interstitial defects in AlxGa 1-xNyP1-y

I. Buyanova, Weimin M. Chen, Y. G. Hong, 2005 .

Time-resolved studies of photoluminescence in GaNxP1−x alloys: Evidence for indirect-direct band gap crossover

J. Bergman, I. Buyanova, Weimin M. Chen, 2002 .

Signature of an intrinsic point defect in GaN x As 1-x

I. Buyanova, Weimin M. Chen, C. Tu, 2001 .

Nature of the fundamental band gap in GaNxP1−x alloys

E. Haller, C. Tu, J. Ager, 2000 .

Effects of nitrogen on the band structure of GaNxP1−x alloys

C. Tu, H. Xin, A. Mascarenhas, 2000 .

Annealing behavior of p-type Ga0.892In0.108NxAs1−x (0⩽X⩽0.024) grown by gas-source molecular beam epitaxy

C. Tu, M. Geva, H. Xin, 1999 .

Quantum dot-like behavior of GaInNAs in GaInNAs/GaAs quantum wells grown by gas-source molecular-beam epitaxy

C. W. Tu, Ziqiang Zhu, K. Kavanagh, 1999 .

Effects of rapid thermal annealing on GaInNAs/GaAs multiple quantum wells

K. Kavanagh, C. Tu, H. Xin, 1999 .

Valence-band splitting and shear deformation potential of dilute GaAs 1 − x N x alloys

C. Tu, H. Xin, A. Mascarenhas, 2000 .

Optical transitions in the isoelectronically doped semiconductor GaP:N: An evolution from isolated centers, pairs, and clusters to an impurity band

C. Tu, H. Xin, A. Mascarenhas, 2000 .

Radiative recombination mechanism in GaNxP1−x alloys

I. Buyanova, Weimin M. Chen, C. Tu, 2002 .

Photothermal ionization identification of residual donors in high purity InP grown by gas source molecular beam epitaxy

H. Xin, S. Shen, P. L. Liu, 1996 .

Properties of GaAsN/GaAs quantum wells studied by optical detection of cyclotron resonance

I. Buyanova, Weimin M. Chen, C. Tu, 2001 .

GaInNP: a novel material for electronic and optoelectronic applications

H. Xin, R. André, C. Tu, 2001, Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198).

Type I band alignment in the GaN x As 1-x /GaAs quantum wells

I. Buyanova, Weimin M. Chen, C. Tu, 2000 .

Novel optoelectronic materials: GaInNAs and Ga(In)NP

C. Tu, M. Sopanen, H. Xin, 2000, LEOS 2000. 2000 IEEE Annual Meeting Conference Proceedings. 13th Annual Meeting. IEEE Lasers and Electro-Optics Society 2000 Annual Meeting (Cat. No.00CH37080).

GaN0.011P0.989 red light-emitting diodes directly grown on GaP substrates

C. Tu, H. Xin, R. Welty, 2000 .

Effect of nitrogen on the band structure of III-N-V alloys

Charles W. Tu, Wei Shan, Wladek Walukiewicz, 2000, Photonics West - Optoelectronic Materials and Devices.

Effects of hydrogen on doping of GaInNAs grown by gas-source molecular beam epitaxy

C. Tu, M. Geva, H. Xin, 2000 .

Photoluminescence characterization of GaNAs/GaAs structures grown by molecular beam epitaxy

I. Buyanova, Weimin M. Chen, C. Tu, 2000 .

Formation of an impurity band and its quantum confinement in heavily doped GaAs:N

C. Tu, H. Xin, A. Mascarenhas, 2000 .

Evolution of GaAs{sub 1-x}N{sub x} conduction states and giant Au/GaAs{sub 1-x}N{sub x} Schottky barrier reduction studied by ballistic electron emission spectroscopy

C. Tu, V. Narayanamurti, H. Xin, 2000 .

Investigation of p-type GaInNAs for heterojunction bipolar transistor base layers

P. Asbeck, C. Tu, H. Xin, 1999 .

Heterojunction bipolar transistors implemented with GaInNAs materials

P. Asbeck, C. Tu, H. Xin, 2002 .

Magnetic resonance signatures of grown-in defects in GaInNP alloys grown on a GaAs substrate

I. Buyanova, M. Izadifard, Weimin M. Chen, 2005 .

Hydrogen-induced improvements in optical quality of GaNAs alloys

I. Buyanova, M. Izadifard, Weimin M. Chen, 2003 .

Application of hydrothermal mechanism for tailor-making perovskite titanate films

Chenglu Lin, Lirong Zheng, H. Xin, 1996, 9th International Symposium on Electrets (ISE 9) Proceedings.

Analysis of band anticrossing in GaNxP1-x alloys

I. Buyanova, M. Izadifard, Weimin M. Chen, 2004 .

Structural properties of carbon nitride films prepared by high dose nitrogen implantation into carbon thin films

S. Zou, Xiaohong Shi, Chenglu Lin, 1996 .

Origin of the nitrogen-induced optical transitions inGaAs1−xNx

M. Seong, C. Tu, H. Xin, 2003 .

Vibrational properties of the H-N-H complex in dilute III-N-V alloys : Infrared spectroscopy and density functional theory

W. Fowler, Y. G. Hong, C. Tu, 2008 .

Unusual carrier thermalization in a dilute GaAs1−xNx alloy

C. Tu, Xianshu Luo, W. Ge, 2007 .

Temperature behavior of the GaNP band gap energy

I. Buyanova, Weimin M. Chen, C. Tu, 2003 .

Evolution of the GaN x P 1 − x alloy band structure: A ballistic electron emission spectroscopic investigation

C. Tu, V. Narayanamurti, H. Xin, 2002 .

Strain relaxation in GaNxP1−x alloy: effect on optical properties

I. Buyanova, Weimin M. Chen, C. Tu, 2001 .

Raman Studies of GaNP Alloy

I. Buyanova, Weimin M. Chen, C. Tu, 2001 .

Growth of cubic boron nitride thin films by a field-ionization source-assisted pulsed laser deposition

S. Zou, Xiaohong Shi, Chenglu Lin, 1995 .