H. Stuchlíková

发表

Basic features of transport in microcrystalline silicon

J. Stuchlík, A. Fejfar, J. Kǒcka, 2003 .

Silicon thin films deposited at very low substrate temperatures

A. Fejfar, J. Kǒcka, H. Uyama, 2003 .

Properties of thin film silicon, prepared at high growth rate in a wide range of thicknesses

J. Stuchlík, A. Fejfar, J. Kǒcka, 2008 .

Anisotropic carrier transport in preferentially oriented polycrystalline silicon films fabricated by very-high-frequency plasma enhanced chemical vapor deposition using fluorinated source gas

A. Fejfar, T. Kamiya, J. Kǒcka, 2000 .

Formation of microcrystalline silicon at low temperatures and role of hydrogen

J. Stuchlík, A. Fejfar, J. Kǒcka, 2004 .

Model of transport in microcrystalline silicon

J. Stuchlík, A. Fejfar, J. Kǒcka, 2002 .

Microcrystalline silicon -- Relation of transport properties and microstructure

J. Stuchlík, A. Fejfar, J. Kǒcka, 1999 .

Optoelectronic Properties of Hydrogenated Amorphous Substoichiometric Silicon Carbide with Low Carbon Content Deposited on Semi‐Transparent Boron‐Doped Diamond

J. Stuchlík, A. Poruba, Z. Remeš, 2019, physica status solidi (a).

Comparative study of catalyst-induced doping and metal incorporation in silicon nanowires

J. Stuchlík, A. Fejfar, Martin Müller, 2019, Applied Physics Letters.

Structure and Properties of Silicon Thin Films Deposited at Low Substrate Temperatures

A. Macková, A. Fejfar, J. Kǒcka, 2003 .

Light emitting wide band gap a-Si:H deposited by microwave electron cyclotron resonance plasma-enhanced chemical vapour deposition

J. Valenta, A. Poruba, J. Kǒcka, 2000 .

Microcrystalline Silicon - Relation between Transport and Microstructure

J. Stuchlík, A. Fejfar, J. Kǒcka, 2001 .

Characterization of grain growth, nature and role of grain boundaries in microcrystalline silicon—review of typical features

J. Stuchlík, A. Fejfar, J. Kǒcka, 2006 .

Microcrystalline silicon, grain boundaries and role of oxygen

J. Stuchlík, A. Fejfar, J. Kǒcka, 2009 .

Charge transport in microcrystalline Si : the specific features

J. Stuchlík, A. Fejfar, J. Kǒcka, 2001 .

A simple tool for quality evaluation of the microcrystalline silicon prepared at high growth rate

J. Stuchlík, A. Fejfar, J. Kǒcka, 2008 .

Ultrasharp Si nanowires produced by plasma‐enhanced chemical vapor deposition

J. Stuchlík, A. Fejfar, J. Kǒcka, 2010 .

Amorphous/microcrystalline silicon superlattices—the chance to control isotropy and other transport properties

J. Stuchlík, A. Fejfar, J. Kǒcka, 2001 .

Role of a‐Si:H in lateral growth of crystalline silicon nanowires using Pb and In catalysts

J. Stuchlík, A. Fejfar, Martin Müller, 2016 .

The physics and technological aspects of the transition from amorphous to microcrystalline and polycrystalline silicon

A. Stemmer, J. Stuchlík, A. Fejfar, 2004 .

Importance of the transport isotropy in μc-Si:H thin films for solar cells deposited at low substrate temperatures

A. Fejfar, A. Poruba, J. Kǒcka, 2002 .

The structure and growth mechanism of Si nanoneedles prepared by plasma-enhanced chemical vapor deposition

J. Stuchlík, A. Fejfar, J. Kǒcka, 2010, Nanotechnology.

Transport anisotropy in microcrystalline silicon studied by measurement of ambipolar diffusion length

J. Stuchlík, A. Fejfar, A. Poruba, 2001 .

A simple quality factor for characterization of thin silicon films

J. Stuchlík, A. Fejfar, J. Kǒcka, 2008 .