K. Yasutake

发表

Impacts of noble gas dilution on Si film structure prepared by atmospheric-pressure plasma enhanced chemical transport

Hiroaki Kakiuchi, Kazuya Kishimoto, H. Ohmi, 2008 .

Formation of SiO2/Si structure with low interface state density by atmospheric-pressure VHF plasma oxidation

H. Ohmi, H. Kakiuchi, K. Yasutake, 2012 .

Formation of microcrystalline SiC films by chemical transport with a high-pressure glow plasma of pure hydrogen

H. Ohmi, H. Kakiuchi, K. Yasutake, 2010 .

Antistatic Technique for Suppressing Charging in Focused Ion Beam Systems Using Microprobing and Ion-Beam-Assisted Deposition

Heiji Watanabe, K. Yasutake, H. Komoda, 2005 .

Self-limiting oxidation of SiGe alloy on silicon-on-insulator wafers

M. Umeno, Heiji Watanabe, K. Yasutake, 2006 .

Dislocations and Ultrasonic Attenuation in Paratellurite

K. Yasutake, K. Yoshii, K. Sugiura, 1991 .

Effect of H2 Flow Rate on High-Rate Etching of Si by Narrow-Gap Microwave Hydrogen Plasma

H. Ohmi, H. Kakiuchi, K. Yasutake, 2013, Plasma Chemistry and Plasma Processing.

Synchrotron X-Ray Topography of Lattice Undulation of Bonded Silicon-On-Insulator Wafers

M. Umeno, K. Yasutake, K. Fukuda, 2004 .

Plasma parameters in very high frequency argon plasmas mixed with nitrogen at atmospheric pressure

Kazushi Yoshida, H. Ohmi, H. Kakiuchi, 2021 .

Plasma parameters in very high frequency helium and argon plasmas at atmospheric pressure

Kazushi Yoshida, H. Ohmi, H. Kakiuchi, 2020 .

Comparison of ordered structure in buried oxide layers in high-dose, low-dose, and internal-thermal-oxidation separation-by-implanted-oxygen wafers

M. Umeno, K. Yasutake, K. Fukuda, 2005 .

Atmospheric pressure plasma chemical vapor deposition system for high-rate deposition of functional materials

Y. Mori, H. Kakiuchi, K. Yasutake, 2000 .

Investigation of deposition characteristics and properties of high-rate deposited silicon nitride films prepared by atmospheric pressure plasma chemical vapor deposition

Y. Mori, H. Ohmi, H. Kakiuchi, 2005 .

Effect of hydrogen on the structure of high-rate deposited SiC on Si by atmospheric pressure plasma chemical vapor deposition using high-power-density condition

Y. Mori, H. Ohmi, H. Kakiuchi, 2006 .

Structural Characterization of Polycrystalline 3C–SiC Films Prepared at High Rates by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Monomethylsilane

H. Ohmi, H. Kakiuchi, K. Yasutake, 2006 .

Deep-level characterization in semi-insulating GaAs by photo-induced current and Hall effect transient spectroscopy

H. Kakiuchi, K. Yasutake, K. Yoshii, 1997 .

Concentration and thermal release of hydrogen in amorphous silicon carbide films prepared by rf sputtering

K. Yasutake, Y. Suzaki, K. Yoshii, 1997 .

Lifetime of metastable fluorine atoms

Y. Mori, M. Shimizu, H. Ohmi, 2001 .

Velocity spectrometer for a neutral atomic beam

Y. Mori, M. Shimizu, H. Ohmi, 2000 .

Hydrogen atom density in narrow-gap microwave hydrogen plasma determined by calorimetry

H. Ohmi, H. Kakiuchi, K. Yasutake, 2016 .

Study of the interaction between molten indium and sub-atmospheric pressure hydrogen glow discharge for low-temperature nanostructured metallic particle film deposition

H. Ohmi, H. Kakiuchi, K. Yasutake, 2017 .

Novel charge neutralization techniques applicable to wide current range of FIB processing in FIB-SEM combined system

Masaaki Yoshida, Yoh Yamamoto, Hirotaka Komoda, 2006, Microelectron. Reliab..

Charge Neutralization Using Focused 500 eV Electron Beam in Focused Ion Beam System

Heiji Watanabe, K. Yasutake, H. Komoda, 2005 .

Microcrystalline Si films grown at low temperatures (90–220 °C) with high rates in atmospheric-pressure VHF plasma

H. Ohmi, H. Kakiuchi, K. Yasutake, 2009 .

Enhancement of film-forming reactions for microcrystalline Si growth in atmospheric-pressure plasma using porous carbon electrode

H. Ohmi, H. Kakiuchi, K. Yasutake, 2008 .

Pulsed very high-frequency plasma-enhanced chemical vapor deposition of silicon films for low-temperature (120 °C) thin film transistors

H. Ohmi, H. Kakiuchi, K. Yasutake, 2020, Journal of Physics D: Applied Physics.

Influence of H2/SiH4 Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma Chemical Vapor Deposition

Y. Mori, H. Ohmi, H. Kakiuchi, 2006 .

Magnesium hydride film formation using subatmospheric pressure H2 plasma at low temperature

H. Ohmi, H. Kakiuchi, K. Yasutake, 2016 .

On-site SiH4 generator using hydrogen plasma generated in slit-type narrow gap

H. Ohmi, H. Kakiuchi, K. Yasutake, 2018 .

Interface properties of SiOxNy layer on Si prepared by atmospheric-pressure plasma oxidation-nitridation

H. Ohmi, H. Kakiuchi, K. Yasutake, 2013, Nanoscale Research Letters.

Room-Temperature Silicon Nitrides Prepared with Very High Rates (>50 nm/s) in Atmospheric-Pressure Very High-Frequency Plasma

K. Nakamura, H. Ohmi, H. Kakiuchi, 2010 .

Low refractive index silicon oxide coatings at room temperature using atmospheric-pressure very high-frequency plasma

H. Ohmi, H. Kakiuchi, K. Yasutake, 2010 .

Highly efficient oxidation of silicon at low temperatures using atmospheric pressure plasma

M. Harada, Heiji Watanabe, H. Ohmi, 2007 .

Crystallization behaviour of amorphous Si1-xCx films prepared by R.F. sputtering

K. Yasutake, Y. Suzaki, K. Yoshii, 1991 .

Analysis of Origin of Threshold Voltage Change Induced by Impurity in Fully Silicided NiSi/SiO2 Gate Stacks

T. Tatsumi, T. Hase, Heiji Watanabe, 2005 .

Significant enhancement of Si oxidation rate at low temperatures by atmospheric pressure Ar/O2 plasma

M. Harada, Heiji Watanabe, H. Ohmi, 2007 .

Plasma-enhanced chemical-vapor-deposited oxide for low surface recombination velocity and high effective lifetime in silicon

S. K. Pang, Z. Chen, A. Rohatgi, 1993 .

Low-temperature synthesis of microcrystalline 3C-SiC film by high-pressure hydrogen-plasma-enhanced chemical transport

H. Ohmi, H. Kakiuchi, K. Yasutake, 2011 .

Characterization of hydrogenated amorphous Si1 xCxfilms prepared at extremely high rates using very high frequency plasma at atmospheric pressure

H. Ohmi, H. Kakiuchi, K. Yasutake, 2003 .

Controllability of structural and electrical properties of silicon films grown in atmospheric-pressure very high-frequency plasma

H. Ohmi, H. Kakiuchi, K. Yasutake, 2018, Journal of Physics D: Applied Physics.

Metal induced hydrogen effusion from amorphous silicon

H. Ohmi, H. Kakiuchi, K. Yasutake, 2007 .

Characterization of intrinsic amorphous silicon layers for solar cells prepared at extremely high rates by atmospheric pressure plasma chemical vapor deposition

Yuzo Mori, Hiroaki Kakiuchi, Kumayasu Yoshii, 2005 .

Characterization of Si and SiOx films deposited in very high‐frequency excited atmospheric‐pressure plasma and their application to bottom‐gate thin film transistors

H. Ohmi, H. Kakiuchi, K. Yasutake, 2015 .

Effective phase control of silicon films during high-rate deposition in atmospheric-pressure very high-frequency plasma: Impacts of gas residence time on the performance of bottom-gate thin film transistors

H. Ohmi, H. Kakiuchi, K. Yasutake, 2013 .

Study on the Growth of Microcrystalline Silicon Films in Atmospheric-Pressure VHF Plasma Using Porous Carbon Electrode

H. Ohmi, H. Kakiuchi, K. Yasutake, 2013 .

Formation of silicon dioxide layers at low temperatures (150—400°C) by atmospheric pressure plasma oxidation of silicon

M. Harada, H. Ohmi, H. Kakiuchi, 2007 .

High-rate growth of epitaxial silicon at low temperatures (530–690 °C) by atmospheric pressure plasma chemical vapor deposition

Y. Mori, H. Ohmi, H. Kakiuchi, 2003 .

Silicon film formation by chemical transport in atmospheric-pressure pure hydrogen plasma

H. Ohmi, H. Kakiuchi, K. Yasutake, 2007 .

X-ray diffraction measurements of internal strain in Si nanowires fabricated using a self-limiting oxidation process

M. Nagase, M. Umeno, K. Yasutake, 2005 .

Oxygen Precipitation and Microdefects in Czochralski-Grown Silicon Crystals

M. Umeno, K. Yasutake, H. Kawabe, 1983, May 16.

Study on silicon removal property and surface smoothing phenomenon by moderate-pressure microwave hydrogen plasma

H. Ohmi, H. Kakiuchi, K. Yasutake, 2021, Materials Science in Semiconductor Processing.

Efficiency of silane gas generation in high-rate silicon etching by narrow-gap microwave hydrogen plasma

H. Ohmi, H. Kakiuchi, K. Yasutake, 2016 .

Selective deposition of a crystalline Si film by a chemical sputtering process in a high pressure hydrogen plasma

H. Ohmi, H. Kakiuchi, K. Yasutake, 2015 .

MINORITY CARRIER DIFFUSION LENGTH AND DEFECT LEVELS IN PLASTICALLY DEFORMED SILICON CRYSTALS

Yo Tanaka, K. Yasutake, K. Yoshii, 1990 .

Extremely high-rate deposition of silicon thin films prepared by atmospheric plasma CVD method with a rotary electrode

K. Murata, M. Tanaka, S. Okamoto, 2003, 3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of.

Molecular beam epitaxial growth of AlN single crystalline films on Si (111) using radio-frequency plasma assisted nitrogen radical source

H. Kakiuchi, K. Yasutake, K. Yoshii, 1998 .

Copper dry etching by sub-atmospheric-pressure pure hydrogen glow plasma

Y. Kubota, H. Ohmi, H. Kakiuchi, 2016 .

Formation of silicon carbide at low temperatures by chemical transport of silicon induced by atmospheric pressure H2/CH4 plasma

H. Ohmi, H. Kakiuchi, K. Yasutake, 2008 .

Improvement of deposition characteristics of silicon oxide layers using argon-based atmospheric-pressure very high-frequency plasma

H. Ohmi, H. Kakiuchi, K. Yasutake, 2022, Journal of Applied Physics.

Silicon Oxide Coatings with Very High Rates (>10 nm/s) by Hexamethyldisiloxane-Oxygen Fed Atmospheric-Pressure VHF Plasma: Film-Forming Behavior Using Cylindrical Rotary Electrode

H. Ohmi, H. Kakiuchi, K. Yasutake, 2012, Plasma Chemistry and Plasma Processing.

Highly efficient formation process for functional silicon oxide layers at low temperatures (≤ 120 °C) using very high-frequency plasma under atmospheric pressure

H. Ohmi, H. Kakiuchi, K. Yasutake, 2019, Precision Engineering.

Atmospheric-pressure low-temperature plasma processes for thin film deposition

H. Ohmi, H. Kakiuchi, K. Yasutake, 2014 .

Study on the growth of heteroepitaxial cubic silicon carbide layers in atmospheric-pressure H2-based plasma.

H. Ohmi, H. Kakiuchi, K. Yasutake, 2011, Journal of Nanoscience and Nanotechnology.

High-quality epitaxial Si growth at low temperatures by atmospheric pressure plasma CVD

H. Ohmi, H. Kakiuchi, K. Yasutake, 2008 .

An atomically controlled Si film formation process at low temperatures using atmospheric-pressure VHF plasma

H. Ohmi, H. Kakiuchi, K. Yasutake, 2011, Journal of physics. Condensed matter : an Institute of Physics journal.

Photoluminescence Study of Defect-Free Epitaxial Silicon Films Grown at Low Temperatures by Atmospheric Pressure Plasma Chemical Vapor Deposition

Heiji Watanabe, H. Ohmi, H. Kakiuchi, 2007 .

Low-Temperature Growth of Epitaxial Si Films by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Porous Carbon Electrode

Heiji Watanabe, H. Ohmi, H. Kakiuchi, 2006 .

Atmospheric Pressure Plasmas: Low-Temperature Processes

H. Ohmi, H. Kakiuchi, K. Yasutake, 2016 .

High-rate HMDSO-based coatings in open air using atmospheric-pressure plasma jet

H. Ohmi, H. Kakiuchi, K. Yasutake, 2012 .

On-site tetrafluoroethylene gas generation from moderate-pressure pure tetrafluoromethane plasma reactor

I. Sakai, J. Abe, H. Hayashi, 2021 .

Significant Improvement of Copper Dry Etching Property of a High-Pressure Hydrogen-Based Plasma by Nitrogen Gas Addition

H. Ohmi, H. Kakiuchi, K. Yasutake, 2019, ACS omega.

Determination of plasma impedance of microwave plasma system by electric field simulation

H. Ohmi, H. Kakiuchi, K. Yasutake, 2017 .

Sample tilting technique for preventing electrostatic discharge during high-current FIB gas-assisted etching with XeF2

Hirotaka Komoda, Chie Moritani, Kazutaka Takahashi, 2007, Microelectron. Reliab..

Analysis of the effective stresses acting on twinning partial dislocations in silicon

K. Yasutake, S. Shimizu, H. Kawabe, 1987 .

Compression Tests of Heat-Treated Czochralski-Grown Silicon Crystals

M. Umeno, K. Yasutake, H. Kawabe, 1982, January 16.

Mechanical properties of heat‐treated Czochralski‐grown silicon crystals

M. Umeno, K. Yasutake, H. Kawabe, 1980 .

Velocity of twinning partial dislocations in silicon

M. Umeno, K. Yasutake, S. Shimizu, 1987 .

Gas-phase kinetics in atmospheric-pressure plasma-enhanced chemical vapor deposition of silicon films

H. Ohmi, H. Kakiuchi, K. Yasutake, 2021, Journal of Applied Physics.

Crack healing and fracture strength of silicon crystals

M. Umeno, K. Yasutake, H. Kawabe, 1986 .

Formation of indium nitride nanostructures by atmospheric pressure plasma nitridation of molten indium

Kazushi Yoshida, H. Ohmi, H. Kakiuchi, 2021, Journal of Applied Physics.

Correlation between Deposition Parameters and Structures of the SiNx Films Deposited at Extremely High Rates by Atmospheric Pressure Plasma CVD

Y. Mori, H. Ohmi, H. Kakiuchi, 2004 .

The effect of pretreatment for SiH 4 gas by microwave plasma on Si film formation behavior by thermal CVD

H. Ohmi, H. Kakiuchi, K. Yasutake, 2020 .

Lifetime measurement of metastable fluorine atoms using electron cyclotron resonance plasma source

M. Shimizu, H. Ohmi, H. Kakiuchi, 2006 .

Reactive ion etching process of SiO2 film using on-site synthesized C2F4 from CF4

I. Sakai, J. Abe, H. Hayashi, 2021 .

Diffusion of excessively adsorbed hydrogen atoms on hydrogen terminated Si(100)(2×1) surface

H. Ohmi, H. Kakiuchi, K. Yasutake, 2021, AIP Advances.

Selective Boron Elimination from B2H6–SiH4 Gas Mixtures for Purifying Si

H. Ohmi, H. Kakiuchi, K. Yasutake, 2016 .

Characteristics of in-situ phosphorus-doped silicon selective epitaxial growth at atmospheric pressure

Heiji Watanabe, H. Iwamoto, S. Kadomura, 2008 .

Investigation of In-situ Boron-Doped Si Selective Epitaxial Growth by Comparison with Arsenic Doping

Heiji Watanabe, H. Iwamoto, S. Kadomura, 2008 .

Suppression of surface segregation and heavy arsenic doping into silicon during selective epitaxial chemical vapor deposition under atmospheric pressure

Heiji Watanabe, H. Iwamoto, S. Kadomura, 2007 .

Atmospheric In situ Arsenic-Doped SiGe Selective Epitaxial Growth for Raised-Extension N-type Metal–Oxide–Semiconductor Field-Effect Transistor

Heiji Watanabe, Y. Miyanami, H. Iwamoto, 2007 .

Heavy arsenic doping of silicon grown by atmospheric pressure selective epitaxial chemical vapor deposition

Heiji Watanabe, Y. Miyanami, H. Iwamoto, 2007 .

In situ arsenic-doped Si1−yCy selective epitaxial growth under atmospheric pressure

Heiji Watanabe, H. Iwamoto, S. Kadomura, 2008 .

Effects of Surface Temperature on High-Rate Etching of Silicon by Narrow-Gap Microwave Hydrogen Plasma

H. Ohmi, H. Kakiuchi, K. Yasutake, 2012 .

Purified Silicon Film Formation from Metallurgical-Grade Silicon by Hydrogen-Plasma-Induced Chemical Transport

H. Ohmi, H. Kakiuchi, K. Yasutake, 2011 .

Chemical Transport Deposition of Purified Poly-Si Films from Metallurgical-grade Si Using Subatmospheric-pressure H 2 Plasma

H. Ohmi, H. Kakiuchi, K. Yasutake, 2010 .

Selective epitaxial growth of in situ carbon‐doped silicon on silicon substrates

Heiji Watanabe, H. Iwamoto, S. Kadomura, 2008 .

PFC-Free Dry Etching Method for Si Using Narrow-Gap VHF Plasma at Subatmospheric Pressure

Hiroaki Kakiuchi, Kazuya Kishimoto, H. Ohmi, 2010 .

High‐rate preparation of thin Si films by atmospheric‐pressure plasma enhanced chemical transport

H. Ohmi, K. Kishimoto, H. Kakiuchi, 2008 .

Low-Temperature Crystallization of Amorphous Silicon by Atmospheric-Pressure Plasma Treatment in H2/He or H2/Ar Mixture

Heiji Watanabe, H. Ohmi, H. Kakiuchi, 2006 .

Low temperature growth of InGaAs/GaAs strained-layer single quantum wells

Akihiro Takeuchi, Kiyoshi Yasutake, Hiroaki Kakiuchi, 1997 .

Defect-free growth of epitaxial silicon at low temperatures (500–800 °C) by atmospheric pressure plasma chemical vapor deposition

H. Ohmi, H. Kakiuchi, K. Yasutake, 2005 .

Impact of Physical Vapor Deposition-Based In situ Fabrication Method on Metal/High-k Gate Stacks

Heiji Watanabe, K. Yasutake, T. Shimura, 2007 .

Characterization of strained Si wafers by X-ray diffraction techniques

M. Umeno, Heiji Watanabe, A. Ogura, 2008 .

Heteroepitaxial growth of cubic SiC on Si using very‐high‐frequency plasma at atmospheric pressure

H. Ohmi, H. Kakiuchi, K. Yasutake, 2008 .

Creation of perfect surfaces

Hidekazu Mimura, Yuzo Mori, Kazuto Yamauchi, 2005 .

Modeling and characterization of interface state parameters and surface recombination velocity at plasma enhanced chemical vapor deposited SiO2–Si interface

Ajeet Rohatgi, S. K. Pang, Z. Chen, 1994 .

Mechanical Properties of Heat-treated CZ–Si Wafers from Brittle to Ductile Temperature Range

Masataka Umeno, Hideaki Kawabe, M. Umeno, 1982 .

Role of Nitrogen Incorporation into Hf-Based High-k Gate Dielectrics for Termination of Local Current Leakage Paths

T. Chikyow, N. Umezawa, S. Kamiyama, 2005 .

Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties

Y. Nara, Heiji Watanabe, K. Yasutake, 2005 .

Thermal and photo-induced surface damage in paratellurite

H. Kakiuchi, K. Yasutake, H. Yamada, 1997 .

Low-Temperature Growth of Epitaxial Si at High Rates by Atmospheric Pressure Plasma CVD (1st Report)-Investigation of the Growth Condition-

Y. Mori, H. Ohmi, H. Kakiuchi, 2003 .

Low Temperature Growth of Polycrystalline Silicon Films by Plasma Chemical Vapor Deposition under Higher Pressure than Atmospheric Pressure

K. Yamamura, H. Kakiuchi, K. Yasutake, 1993 .

Effect of Silane Concentration on Structure of the Poly-Si Films Prepared at High Rates by Atmospheric Pressure Plasma CVD

Y. Mori, H. Ohmi, H. Kakiuchi, 2005 .

Spatial fluctuation of dielectric properties in Hf-based high-k gate films studied by scanning capacitance microscopy

S. Kamiyama, Y. Nara, H. Ogiso, 2005 .

White X-ray Topography of Lattice Undulation in Bonded Silicon-on-Insulator Wafers

M. Umeno, K. Yasutake, S. Iida, 2006 .

Large-Area X-Ray Topographs of Lattice Undulation of Bonded Silicon-On-Insulator Wafers

M. Umeno, K. Yasutake, K. Fukuda, 2003 .

High-Rate Deposition of Amorphous SiC Films by Atmospheric Pressure Plasma Chemical Vapor Deposition (2nd Report)

Y. Mori, H. Ohmi, H. Kakiuchi, 2004 .