Shuguang Zhang

发表

Effect of InGaAs interlayer on the properties of GaAs grown on Si (111) substrate by molecular beam epitaxy

Wenliang Wang, W. Lei, Fangliang Gao, 2014 .

Effects of growth rate on structural property and adatom migration behaviors for growth of GaInNAs/GaAs (001) by molecular beam epitaxy

W. Lei, Fangliang Gao, Shuguang Zhang, 2018 .

The temperature dependence of atomic incorporation characteristics in growing GaInNAs films

Wen Lei, Shizhong Zhou, W. Lei, 2015 .

The mechanism of indium-assisted growth of (In)GaN nanorods: eliminating nanorod coalescence by indium-enhanced atomic migration.

Fangliang Gao, Shuguang Zhang, Guoqiang Li, 2017, Nanoscale.

Effect of Si doping in barriers of InGaN/GaN multiple quantum wells on the performance of green light-emitting diodes

R. Hao, Shuguang Zhang, Zhiting Lin, 2015 .

Growth of InN Nanowires with Uniform Diameter on Si(111) Substrates: Competition Between Migration and Desorption of In Atoms.

Fangliang Gao, Shuguang Zhang, Guoqiang Li, 2017, Small.

Enhanced charge separation and interfacial charge transfer of InGaN nanorods/C3N4 heterojunction photoanode

Fangliang Gao, Shuguang Zhang, Guoqiang Li, 2019, Electrochimica Acta.

Surface passivation of InGaN nanorods using H3PO4 treatment for enhanced photoelectrochemical performance

Fangliang Gao, Shuguang Zhang, Guoqiang Li, 2019, Journal of Power Sources.

Achieving high-quality In0.3Ga0.7As films on GaAs substrates by low-temperature molecular beam epitaxy

W. Lei, Fangliang Gao, Shuguang Zhang, 2014 .

Correlations among morphology, composition, and photoelectrochemical water splitting properties of InGaN nanorods grown by molecular beam epitaxy

Fangliang Gao, Shuguang Zhang, Guoqiang Li, 2018, Nanotechnology.

Synthesis of homogeneous and high-quality GaN films on Cu(111) substrates by pulsed laser deposition

Wenliang Wang, Shuguang Zhang, Shizhong Zhou, 2014 .

Effect of InxGa1-xAs interlayer on the properties of In0.3Ga0.7As epitaxial films grown on Si (111) substrates by molecular beam epitaxy

W. Lei, Fangliang Gao, Xiaona Zhang, 2015 .

Strain relaxation of the In0.53Ga0.47As epi-layer grown on a Si substrate using molecular beam epitaxy

W. Lei, Fangliang Gao, Xiaona Zhang, 2014 .

The Mechanism of the Photostability Enhancement of Thin-Film Transistors Based on Solution-Processed Oxide Semiconductors Doped with Tetravalent Lanthanides

L. Lan, Junbiao Peng, Shuguang Zhang, 2022, Nanomaterials.

Crystallographic plane and topography-dependent growth of semipolar InGaN nanorods on patterned sapphire substrates by molecular beam epitaxy.

Y. Gan, Fangliang Gao, Shuguang Zhang, 2018, Nanoscale.

Growth of InAs Quantum Dots on GaAs (511)A Substrates: The Competition between Thermal Dynamics and Kinetics.

Fangliang Gao, Shuguang Zhang, Guoqiang Li, 2016, Small.

Deposition of nonpolar m-plane InGaN/GaN multiple quantum wells on LiGaO2(100) substrates

Wenliang Wang, Fangliang Gao, Shuguang Zhang, 2014 .

Enhancing the photovoltaic performance of GaAs/graphene Schottky junction solar cells by interfacial modification with self assembled alkyl thiol monolayer

W. Lei, Fangliang Gao, Shuguang Zhang, 2018 .