F. Fang

8 W continuous wave front‐facet power from broad‐waveguide Al‐free 980 nm diode lasers

John C. Connolly, Dan Botez, Dmitri Z. Garbuzov, 1996 .

High power, high efficiency vcsel arrays with narrow emission spectrum

W. Hitchens, R. Nabiev, A. Mooradian, 2005 .

A new interpretation for performance improvement of high-efficiency vertical blue light-emitting diodes by InGaN/GaN superlattices

F. Fang, F. Jiang, Guangxu Wang, 2015 .

Effect of V-shaped Pit area ratio on quantum efficiency of blue InGaN/GaN multiple-quantum well light-emitting diodes

F. Fang, Z. Quan, J. L. Liu, 2016, Optical and Quantum Electronics.

Effect of V-shaped Pit area ratio on quantum efficiency of blue InGaN/GaN multiple-quantum well light-emitting diodes

F. Fang, F. Jiang, Guangxu Wang, 2016 .

Effects of thickness ratio of InGaN to GaN in superlattice strain relief layer on the optoelectrical properties of InGaN-based green LEDs grown on Si substrates

F. Fang, F. Jiang, Guangxu Wang, 2017 .

Performance enhancement of yellow InGaN-based multiple-quantum-well light-emitting diodes grown on Si substrates by optimizing the InGaN/GaN superlattice interlayer

F. Fang, F. Jiang, Guangxu Wang, 2018 .

High continuous wave power, 0.8 μm-band, Al-free active-region diode lasers

Dan Botez, Luke J. Mawst, R. F. Nabiev, 1997 .

High CW power 0.8 /spl mu/m-band Al-free active-region diode lasers

J. K. Wade, L. Mawst, R. Nabiev, 1996, Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society.