S. R. Kurtz

Deep levels in p-type InGaAsN lattice matched to GaAs

Steven A. Ringel, Eric Daniel Jones, Andrew A. Allerman, 1999 .

Advances in AlGaN-based deep UV LEDs.

S. R. Lee, A. Allerman, W. Chow, 2004 .

A three-dimensional photonic crystal operating at infrared wavelengths

Bradley K. Smith, M. Sigalas, R. Biswas, 1998, Nature.

Progress in the growth of mid-infrared InAsSb emitters by metal-organic chemical vapor deposition

A. A. Allerman, K. C. Baucom, R. M. Biefeld, 1998 .

Microstructures of InAs1−xSbx (x = 0.07–0.14) alloys and strained-layer superlattices

R. M. Biefeld, S. R. Kurtz, D. Follstaedt, 1995 .

Structural and Electrical Characterization of Highly Tetrahedral-Coordinated Diamond-Like Carbon Films Grown by Pulsed-Laser Deposition

D. Tallant, M. Siegal, T. Friedmann, 1994 .

InAsSb‐based mid‐infrared lasers (3.8–3.9 μm) and light‐emitting diodes with AlAsSb claddings and semimetal electron injection, grown by metalorganic chemical vapor deposition

R. M. Biefeld, A. Allerman, S. R. Kurtz, 1996 .

Long-wavelength, InAsSb strained-layer superlattice photovoltaic infrared detectors

I. J. Fritz, R. M. Biefeld, T. E. Zipperian, 1989, IEEE Electron Device Letters.