P. Eliáš

发表

Formation of interfaces in InGaP/GaAs/InGaP quantum wells

R. Kúdela, J. Novák, M. Kučera, 2000 .

MOCVD growth of InxGa1−xAs/GaAs multiple quantum well and superlattice structures for optical modulators

R. Kúdela, J. Novák, M. Kučera, 1998 .

Columnar microstructure of the ZnO shell layer deposited on the GaP nanowires

I. Vávra, J. Novák, P. Eliáš, 2014 .

Nanorods and nanocones for advanced sensor applications

J. Novák, P. Eliáš, S. Hasenöhrl, 2018, Applied Surface Science.

Optical and mechanical properties of a compact ZnO layer with embedded GaP nanowires

J. Kovač, J. Novák, P. Eliáš, 2017 .

Fabrication of nanocones by RIE on GaP

P. Eliáš, S. Hascik, 2019, Journal of Physics: Conference Series.

TECHNICAL NOTE: GaAs/AlAs/InGaP heterostructure: a versatile material basis for cantilever designs

D. Gregušová, R. Kúdela, I. Kostic, 2010 .

Ohmic contacts to p-GaP/n-ZnO core/shell nanowires based on Au metallization

M. Blaho, R. Stoklas, J. Novák, 2013 .

GaP/ZnO nanowires with a radial pn heterojunction

J. Novák, P. Eliáš, I. Novotný, 2012, The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems.

Formation of a compact Ga-doped ZnO layer over vertical free-standing GaP nanowires

J. Kovač, J. Novák, P. Eliáš, 2017 .

GaP nanocones covered with silver nanoparticles for surface-enhanced Raman spectroscopy

J. Novák, P. Eliáš, S. Hasenöhrl, 2018, Applied Surface Science.

Near-field analysis of GaP nanocones

J. Novák, P. Eliáš, S. Hasenöhrl, 2021 .

Structural and optical properties of individual GaP/ZnO core–shell nanowires

I. Vávra, M. Mikulics, J. Novák, 2013 .

Photoluminescence of single GaP/ZnO core-shell nanowires

I. Vávra, M. Mikulics, J. Novák, 2012, The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems.

Investigation of a nanostructured GaP/MoS2 p-n heterojunction photodiode

J. Novák, P. Eliáš, S. Hasenöhrl, 2022, AIP Advances.

WHO FORGOT THEY WERE UNEMPLOYED

P. Eliáš, 2007 .

Conformal AZ5214-E resist deposition on patterned (1 0 0) InP substrates

D. Gregušová, I. Kostic, P. Eliáš, 2006 .

In(Ga)N 3D Growth on GaN-Buffered On-Axis and Off-Axis (0001) Sapphire Substrates by MOCVD

J. Kuzmík, F. Gucmann, M. Kučera, 2022, Nanomaterials.

Twinned nanoparticle structures for surface enhanced Raman scattering

P. Eliáš, S. Hasenöhrl, D. Pudiš, 2020 .

Patterning of pyramidal recesses in (100)InP substrate

I. Kostic, P. Eliáš, J. Soltýs, 2011 .

Study of ordinary facets revealed in (1 0 0) InP by etching in HCl

I. Kostic, P. Eliáš, J. Soltýs, 2007 .

Micromachining of mesa and pyramidal-shaped objects in (1 0 0) InP substrates

I. Kostic, P. Eliáš, J. Soltýs, 2005 .

Wet-etch bulk micromachining of (100) InP substrates

Ivan Kostic, Peter Eliáš, I. Kostic, 2004 .

Analysis of the core–shell interface between zinc-blende GaP and wurtzite ZnO

I. Vávra, M. Mikolasek, J. Novák, 2014 .

Zinc-doped gallium phosphide nanowires for photovoltaic structures

R. Stoklas, J. Novák, P. Eliáš, 2013 .

Conformal, planarizing and bridging AZ5214-E layers deposited by a ‘draping’ technique on non-planar III–V substrates

I. Kostic, P. Eliáš, P. Štrichovanec, 2006 .

Study of the growth and structural properties of InMnAs dots grown on high-index surfaces by MOVPE

I. Vávra, J. Novák, P. Eliáš, 2010 .

InMnAs dots grown on GaAs surfaces etched via AlAs sacrificial layer

I. Vávra, J. Novák, P. Eliáš, 2008, International Conference on Advanced Semiconductor Devices and Microsystems.

Switching Magnetization Magnetic Force Microscopy — An Alternative to Conventional Lift-Mode MFM

Ivan Kostič, Ján Fedor, Ján Maňka, 2011 .

Magnetic elements for switching magnetization magnetic force microscopy tips

V. Novosad, D. Gregušová, J. Fedor, 2010 .

Preparation of thin Ga-doped ZnO layers for core–shell GaP/ZnO nanowires

I. Vávra, R. Stoklas, J. Novák, 2012 .

Technology and properties of a vector hall sensor

Ivan Kostic, Dagmar Gregusová, Peter Eliás, 2006, Microelectron. J..

OMCVD growth of InP and InGaAs on InP non-planar substrates patterned with {110} quasi facets

I. Kostic, P. Eliáš, S. Hasenöhrl, 2001 .

CCl4-Based RIE Pattern Transfer into Facets of Mesas Formed by Wet Etching in InP(100)

I. Kostic, P. Eliáš, S. Hascik, 2006 .

Hall bar device processing on patterned substrates using optical lithography

J. Fedor, P. Eliáš, S. Hasenöhrl, 2002 .

Polar diagram of wet-etched [100] InP

I. Kostic, P. Eliáš, S. Hasenőhrl, 2002, Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307).

Crystallographic dependence of OMVPE InGaAs/InP lateral growth on patterned (100) InP substrates prepared by wet etching

I. Kostic, P. Eliáš, S. Hasenöhrl, 2000 .

GaAs Nanomembranes in the High Electron Mobility Transistor Technology

M. Blaho, D. Gregušová, R. Kúdela, 2021, Materials.

Approaching the pT range with a 2DEG InGaAs/InP Hall sensor at 77 K

W. Kwok, P. Eliáš, S. Hasenöhrl, 2000 .

Methanol sensor for integration with GaP nanowire photocathode

J. Novák, A. Laurenčíková, S. Hasenohrl, 2017, Microtechnologies.

Preparation of stair-step grooves by wet etching of AlAs/GaAs heterostructures and MOCVD growth of QWR

I. Vávra, J. Novák, M. Kučera, 1999 .

Characterization of an AlGaAs/GaAs quantum well prepared on objects of pyramidal shape

I. Vávra, R. Kúdela, J. Novák, 2011 .

InN crystal habit, structural, electrical, and optical properties affected by sapphire substrate nitridation in N-polar InN/InAlN heterostructures

J. Kuzmík, R. Stoklas, F. Gucmann, 2021 .