J. Leymarie

发表

Investigation of the P–As substitution at GaAs/Ga0.51In0.49P interfaces by photoluminescence under pressure

J. Massies, A. Aurand, J. Leymarie, 2001 .

MOVPE of AlxGa1−xAs alloys above 850° C

A. Leycuras, B. Gil, J. Leymarie, 1988 .

Influence of optical confinement and excitonic absorption on strong coupling in a bulk GaN microcavity grown on silicon

J. Leymarie, A. Vasson, M. Leroux, 2012 .

Optical and structural analysis of ultra-long GaAs nanowires after nitrogen-plasma passivation

R. LaPierre, C. Bougerol, J. Leymarie, 2020 .

Photoluminescence studies of As P exchange in GaAs/GaInP2 quantum wells grown by chemical beam epitaxy

A. Aurand, J. Leymarie, A. Vasson, 1998 .

Effects of segregation on the optical properties of (In,Ga)As/GaAs quantum wells grown by MBE under various conditions

J. Massies, N. Grandjean, J. Leymarie, 1997 .

Circumventing the miscibility gap in InGaN nanowires emitting from blue to red

C. Bougerol, V. Dubrovskii, J. Leymarie, 2018, Nanotechnology.

Polariton lasing in a hybrid bulk ZnO microcavity

Sophie Bouchoule, Georg Rossbach, Nicolas Grandjean, 2011 .

Patterned silicon substrates: A common platform for room temperature GaN and ZnO polariton lasers

J. Zúñiga-Pérez, J. Leymarie, M. Leroux, 2014, 1404.7743.

Fabrication and characterization of a room-temperature ZnO polariton laser

G. Patriarche, J. Zúñiga-Pérez, J. Leymarie, 2013 .

Experimental observation of strong light-matter coupling in ZnO microcavities : Influence of large excitonic absorption

J. Leymarie, A. Vasson, M. Leroux, 2008, 0812.3383.

Relaxation and emission of Bragg-mode and cavity-mode polaritons in a ZnO microcavity at room temperature

T. Bretagnon, B. Gil, J. Leymarie, 2009, 0905.4351.

Spatially resolved optical control of GaN grown by selective area hydride vapor phase epitaxy

J. Leymarie, E. Gil, Y. André, 2015 .

Inconsistency of basic optical processes in plasmonic nanocomposites

T. Araki, Y. Nanishi, J. Leymarie, 2009 .

Room-Temperature Optical Tunability and Inhomogeneous Broadening in 2D-Layered Organic-Inorganic Perovskite Pseudobinary Alloys.

J. Even, J. Leymarie, J. Lauret, 2014, The journal of physical chemistry letters.

Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280nm

R. Dupuis, A. Ougazzaden, G. Patriarche, 2015 .

Strong light-matter coupling in ultrathin double dielectric mirror GaN microcavities

J. Leymarie, A. Vasson, M. Leroux, 2008 .

From evidence of strong light–matter coupling to polariton emission in GaN microcavities

J. Massies, M. Gurioli, A. Vinattieri, 2007 .

Growth by Molecular Beam Epitaxy and Optical Properties of a Ten‐Period AlGaN/AlN Distributed Bragg Reflector on (111)Si

J. Massies, J. Leymarie, A. Vasson, 2001 .

Electrical and optical properties of InN with periodic metallic in insertions

T. Araki, Y. Nanishi, J. Leymarie, 2009 .

High reflectance dielectric distributed Bragg reflectors for near ultra-violet planar microcavities: SiO2/HfO2 versus SiO2/SiNx

G. Patriarche, J. Zúñiga-Pérez, J. Leymarie, 2016 .

Charge and spin transport over record distances in GaAs metallic n -type nanowires

J. Leymarie, C. Robert-Goumet, G. Monier, 2020, Physical Review B.

Accurate determination of homogeneous and inhomogeneous excitonic broadening in ZnO by linear and nonlinear spectroscopies

J. Leymarie, E. Mallet, T. Shubina, 2013 .

ZnO-Based Polariton Laser Operating at Room Temperature: From Excitonic to Photonic Condensate

J. Zúñiga-Pérez, J. Leymarie, M. Leroux, 2012, 1207.7172.

Strong light–matter coupling in GaN microcavities grown on silicon(111) at room temperature

J. Massies, J. Leymarie, A. Vasson, 2006 .

Strong light-matter coupling at room temperature in simple geometry GaN microcavities grown on silicon

J. Massies, J. Leymarie, A. Vasson, 2005 .

Observation of Rabi splitting in a bulk GaN microcavity grown on silicon

J. Massies, J. Leymarie, A. Vasson, 2003 .

Advances in the Realisation of GaN-Based Microcavities: Towards Strong Coupling at Room Temperature

J. Massies, J. Leymarie, A. Vasson, 2003 .

LO-phonon-assisted polariton lasing in a ZnO-based microcavity

J. Leymarie, M. Leroux, F. Semond, 2011, 1112.0043.

Photoluminescence study of the Be acceptor at the centre of quantum wells with sizes in the range 28 - 300 Å

J. M. Chamberlain, J. Leymarie, A. Vasson, 1996 .

Investigation of N2 plasma GaAs surface passivation efficiency against air exposure: Towards an enhanced diode

P. Hoggan, J. Leymarie, B. Gruzza, 2022, Applied Surface Science.

Polariton condensation phase diagram in wide-band-gap planar microcavities: GaN versus ZnO

J. Zúñiga-Pérez, J. Leymarie, M. Leroux, 2015, 1512.05985.

Mie resonances, infrared emission, and the band gap of InN.

A. Kavokin, H. Amano, J. Leymarie, 2003, Physical review letters.

Study of GaN layer crystallization on GaAs(100) using electron cyclotron resonance or glow discharge N2 plasma sources for the nitriding process

P. Hoggan, C. Bougerol, J. Leymarie, 2019, Applied Surface Science.

Optical investigations of bulk and multi-quantum well nitride-based microcavities

J. Massies, J. Leymarie, A. Vasson, 2009 .

The low temperature limit of the excitonic Mott density in GaN: an experimental reassessment

J. Zúñiga-Pérez, J. Leymarie, B. Alloing, 2022, New Journal of Physics.

Strong coupling of exciton-polaritons in a bulk GaN planar waveguide: quantifiying the Rabi splitting

E. Cambril, J. Leymarie, F. Semond, 2020, 2002.05066.

Hybrid cavity polaritons in a ZnO-perovskite microcavity

J. Zúñiga-Pérez, P. Audebert, J. Leymarie, 2011 .

Homoepitaxial nonpolar (10-10) ZnO/ZnMgO monolithic microcavities: Towards reduced photonic disorder

S. Chenot, J. Zúñiga-Pérez, M. Grundmann, 2016 .

Terahertz electroluminescence of surface plasmons from nanostructured InN layers

I. P. Soshnikov, Xiaodong Wang, V. Shalygin, 2010 .

The determination of e14 in (111)B-grown (In,Ga)As/GaAs strained layers

J. Leymarie, A. Vasson, R. Grey, 1998 .

Optical properties of InN with stoichoimetry violation and indium clustering

I. Akasaki, Q. Guo, J. Leymarie, 2005 .

High-pressure photoluminescence study of GaAs doped with various donor species

J. Sallese, J. Leymarie, M. Leroux, 1991 .

MONOLAYER THICKNESS CONTROL OF INXGA1-XAS/GAAS QUANTUM-WELLS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY

J. Massies, N. Grandjean, J. Leymarie, 1994 .

Ultralong and defect-free GaN nanowires grown by the HVPE process.

C. Bougerol, J. Leymarie, G. Monier, 2014, Nano letters.

Conduction band offset ratio of the (In,Ga)As/GaAs system and (In,Ga)As alloy properties

J. Leymarie, C. Monier, P. Disseix, 1997 .

Optical and excitonic properties of ZnO films

D. Buell, J. Pérez, J. Leymarie, 2009 .

Excitonic parameters of GaN studied by time-of-flight spectroscopy

J. Bergman, B. Gil, J. Leymarie, 2011, 1104.2749.

Resonant light delay in GaN with ballistic and diffusive propagation.

J. Bergman, A. Kavokin, J. Leymarie, 2007, Physical review letters.

Edge-emitting polariton laser and amplifier based on a ZnO waveguide

E. Cambril, J. Zúñiga-Pérez, J. Leymarie, 2017, Light: Science & Applications.

INDIUM SEGREGATION EFFECTS IN (111)B-GROWN (IN, GA)AS/GAAS PIEZOELECTRIC QUANTUM WELLS

J. Leymarie, A. Vasson, R. Grey, 1999 .

InGaN/GaN quantum wells grown by molecular-beam epitaxy emitting from blue to red at 300 K

Nicolas Grandjean, Benjamin Damilano, Jean Massies, 2000 .

Annealing effects on InGaAsN∕GaAs quantum wells analyzed using thermally detected optical absorption and ten band k−p calculations

J. Massies, B. Damilano, J. Leymarie, 2007 .

MOVPE grown periodic AlN/BAlN heterostructure with high boron content

R. Dupuis, A. Ougazzaden, J. Leymarie, 2015 .

From excitonic to photonic polariton condensate in a ZnO-based microcavity.

G. Patriarche, J. Zúñiga-Pérez, J. Leymarie, 2013, Physical review letters.

Hydride VPE: the unexpected process for the fast growth of GaAs and GaN nanowires with record aspect ratio and polytypism-free crystalline structure

Christelle Varenne, François Réveret, Dominique Castelluci, 2013, Smart Materials, Nano-, and Micro- Smart Systems.

AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm

R. Dupuis, A. Ougazzaden, G. Patriarche, 2015 .

AlN/AlGaN Bragg-Reflectors for UV Spectral Range Grown by Molecular Beam Epitaxy on Si (111)

Lionel Hirsch, Fabrice Semond, Mathieu Leroux, 2002 .

Optical investigations and absorption coefficient determination of InGaN/GaN quantum wells

Nicolas Grandjean, Benjamin Damilano, Jean Massies, 2002 .

Comparison of thermally detected optical absorption and electromodulation spectra of GaAs/AlGaAs quantum wells

J. M. Chamberlain, J. Leymarie, A. Vasson, 1994 .

Localized plasmons at pores and clusters within inhomogeneous indium nitride films

J. Leymarie, A. Vasson, B. Monemar, 2007 .

Determination of the refractive indices of AlN, GaN, and AlxGa1−xN grown on (111)Si substrates

Fabrice Semond, Jean Massies, M. Mihailovic, 2003 .

Temperature Dependence of Optical Properties of h-GaN Films Studied by Reflectivity and Ellipsometry

J. Massies, N. Grandjean, J. Leymarie, 2000 .

OPTICAL STUDY OF SEGREGATION EFFECTS ON THE ELECTRONIC PROPERTIES OF MOLECULAR-BEAM-EPITAXY GROWN (IN,GA)AS/GAAS QUANTUM WELLS

J. Massies, N. Grandjean, J. Leymarie, 1997 .

Thermally detected optical absorption and photoluminescence in a GaAs/GaAlAs multiquantum well sample

J. M. Chamberlain, M. Henini, J. Leymarie, 1993 .

First investigation on an ultra-thin InAs/InP single quantum well by thermally detected optical absorption spectroscopy

B. Gil, J. Leymarie, A. Vasson, 1993 .

Modelling of thermally detected optical absorption and luminescence of (In, Ga)N/GaN heterostructures

J. Massies, N. Grandjean, J. Leymarie, 2000 .

Fabrication and characterization of ultrathin double dielectric mirror GaN microcavities

J. Leymarie, A. Vasson, M. Leroux, 2008 .

Optical spectroscopy at cryogenic temperatures using a Block-Piermarini diamond-anvil cell

J. Leymarie, M. Leroux, G. Meheut, 1988 .

InN/In nanocomposites: Plasmonic effects and a hidden optical gap

T. Araki, Y. Nanishi, J. Leymarie, 2008, 0806.4516.

InN/In nanocomposites: Evidences of plasmonic effects and hidden gap

T. Araki, Y. Nanishi, J. Leymarie, 2008, 0806.4509.

Fabrication and Optical Properties of a Fully-Hybrid Epitaxial ZnO-Based Microcavity in the Strong-Coupling Regime

J. Zúñiga-Pérez, J. Leymarie, M. Leroux, 2011, 1105.0747.

Influence of the mirrors on the strong coupling regime in planar GaN microcavities

J. Massies, J. Leymarie, A. Vasson, 2008, 0805.3090.

High-pressure photoluminescence of GaAs co-doped with Se and Ge

J. Leymarie, M. Leroux, P. Gibart, 1995 .

Nitrogen bound exciton spectroscopy in GaAs under pressure

J. Leymarie, M. Leroux, G. Neu, 1989 .

Strong Coupling of Exciton-Polaritons in a Bulk GaN Planar Waveguide: Quantifying the Coupling Strength

E. Cambril, J. Zúñiga-Pérez, J. Leymarie, 2020, Physical Review Applied.

Toward polariton lasing in a zinc oxide microcavity: Design and preliminary results

J. Zúñiga-Pérez, J. Leymarie, M. Leroux, 2010 .

Relaxation and emission of Bragg-mode and cavity-mode polaritons in a ZnO microcavity at room temperature

T. Bretagnon, B. Gil, J. Leymarie, 2009, 0905.4351.

Femtosecond time-resolved interferences of resonantly excited excitons in bulk GaN

J. Leymarie, A. Vasson, B. Beaumont, 2004 .

Indirect observation of single-exciton quantum beats in the time-resolved reflection of a single quantum well

A. Kavokin, J. Leymarie, A. Vasson, 1999 .

Surface-plasmon resonances in indium nitride with metal-enriched nano-particles

W. Schaff, J. Leymarie, A. Vasson, 2006 .

Plasmonic effects in InN‐based structures with nano‐clusters of metallic indium

J. Leymarie, A. Vasson, V. Jmerik, 2006 .

Optical properties of InN related to surface plasmons

W. Schaff, H. Amano, J. Leymarie, 2005 .

Competition between horizontal and vertical polariton lasing in planar microcavities

J. Zúñiga-Pérez, J. Leymarie, M. Leroux, 2018, Physical Review B.

RBS studies of AlGaN/AlN Bragg reflectors

P. Moretto, J. Massies, N. Grandjean, 2003 .

Resonant Raman spectroscopy on InN

W. Schaff, J. Leymarie, A. Vasson, 2005 .

Improved GaInAs/GaAs heterostructures by high growth rate molecular beam epitaxy

Nicolas Grandjean, Mathieu Leroux, Jean Massies, 1994 .

Epitaxial growth of InAsxP1-x/InP quantum wells by HVPE

J. Leymarie, B. Gruzza, D. Castelluci, 1999 .

Inhomogeneous InGaN and InN with In-enriched Nanostructures

J. Leymarie, A. Vasson, B. Monemar, 2007 .

Continuous wave and ultra-fast reflectivity studies for the determination of GaN excitonic oscillator strengths as a function of the in-plane biaxial strain

J. Leymarie, A. Vasson, Y. André, 2006 .

Strong coupling of light with A and B excitons in GaN microcavities grown on silicon

Fabrice Semond, Mathieu Leroux, Jean Massies, 2006 .

Comparative optical characterization of GaN grown by metal-organic vapor phase epitaxy, gas source molecular beam epitaxy and halide vapor phase epitaxy

J. Massies, N. Grandjean, J. Leymarie, 1997 .

Effects of non‐stoichiometry and compensation on fundamental parameters of heavily‐doped InN

T. Araki, Y. Nanishi, J. Leymarie, 2007 .

Continuous-wave and ultrafast coherent reflectivity studies of excitons in bulk GaN

J. Leymarie, A. Vasson, M. Leroux, 2008 .

Modelling of strong coupling regime in bulk GaN microcavities using transfer matrix and quasiparticle formalisms

J. Massies, J. Leymarie, A. Vasson, 2010 .

Characteristics of Exciton-polaritons in Zno- Based Hybrid Microcavities

H. Morkoç, P. Lagoudakis, F. Laussy, 2022 .

Thermally detected optical absorption and photoluminescence studies of InGaAsN/GaAs quantum wells

J. Leymarie, A. Vasson, H. Carrère, 2004 .