M. Mesrine

Investigation of the P–As substitution at GaAs/Ga0.51In0.49P interfaces by photoluminescence under pressure

J. Massies, A. Aurand, J. Leymarie, 2001 .

Photoluminescence studies of As P exchange in GaAs/GaInP2 quantum wells grown by chemical beam epitaxy

A. Aurand, J. Leymarie, A. Vasson, 1998 .

Molecular Beam Epitaxy of GaN under N-rich Conditions using NH3

J. Massies, N. Grandjean, M. Mesrine, 1999 .

Efficiency of NH3 as nitrogen source for GaN molecular beam epitaxy

J. Massies, N. Grandjean, M. Mesrine, 1998 .

Photoluminescence energy and interface chemistry of GaInP/GaAs quantum wells

J. Massies, N. Grandjean, M. Mesrine, 1997 .

Indium surface segregation during chemical beam epitaxy of Ga1-xInxAs/GaAs and Ga1-xInxP/GaAs heterostructures

J. Massies, N. Grandjean, M. Mesrine, 1997 .

High resolution earth observation from geostationary orbit by optical aperture synthesys

David Laubier, Frédéric Cassaing, P. Blanc, 2006, International Conference on Space Optics.