Baijun Zhang

Baijun Zhang, Liuan Li, Fan Yang, 2016, 2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

Effect of Gan interlayer thickness on the Algan/Gan heterostructure field-effect transistors for self-terminated wet etching process

Baijun Zhang, Liuan Li, Fan Yang, 2016, 2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

Normally-off GaN recessed-gate MOSFET fabricated by selective area growth technique

Baijun Zhang, Yao Yao, J. Ao, 2014 .

Enhancement-mode AlGaN/GaN heterostructure field effect transistors fabricated by selective area growth technique

G. Wang, Hao Jiang, Baijun Zhang, 2011 .

The influence of Al composition in AlGaN back barrier layer on leakage current and dynamic RON characteristics of AlGaN/GaN HEMTs

Baijun Zhang, Liuan Li, Fan Yang, 2017 .

High Threshold Voltage Uniformity and Low Hysteresis Recessed-Gate Al2O3/AlN/GaN MISFET by Selective Area Growth

Baijun Zhang, Yao Yao, Liuan Li, 2017, IEEE Transactions on Electron Devices.

Influence of interface contamination on transport properties of two-dimensional electron gas in selective area growth AlGaN/GaN heterostructure

Baijun Zhang, Yao Yao, Liuan Li, 2016, Journal of Materials Science: Materials in Electronics.

Synthesis and characterization of p-type NiO films suitable for normally-off AlGaN/GaN HFETs application

Baijun Zhang, Liuan Li, Zhisheng Wu, 2017 .

Influences of periodic Si delta-doping on the characteristics of n-GaN grown on Si (111) substrate

Baijun Zhang, Jianliang Jiang, P. Xiang, 2014 .

Tunable MQW-DBR lasers using selective area growth

Wei Wang, Guoyang Xu, Xiaojie Wang, 2000, International Conference on Thin Film Physics and Applications.

Influence of the carbon-doping location on the material and electrical properties of a AlGaN/GaN heterostructure on Si substrate

Baijun Zhang, Yao Yao, Guilin Zhou, 2015 .

Low-leakage current and high-breakdown voltage GaN-on-Si (111) System with an AlGaN impurity blocking layer

Baijun Zhang, Fan Yang, Zijun Chen, 2016, Journal of Materials Science: Materials in Electronics.

Current transport mechanism of AlGaN/GaN Schottky barrier diode with fully recessed Schottky anode

Baijun Zhang, Yao Yao, Guilin Zhou, 2014 .

Schottky performance variation on r-plane and c-plane of GaN micro truncated-pyramid grown by selective area MOCVD

Baijun Zhang, Zhisheng Wu, Yang Liu, 2017 .

Schottky diodes of Ni/Au on n-GaN grown on sapphire and SiC substrates

M. Umeno, T. Egawa, T. Jimbo, 2001 .

Novel Quaternary AlInGaN/GaN Heterostructure Field Effect Transistors on Sapphire Substrate

T. Egawa, Baijun Zhang, H. Ishikawa, 2006 .

Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates

Baijun Zhang, Z. Feng, Tao Lin, 2018, Nanoscale Research Letters.

Effect of AlN/GaN superlattice buffer on the strain state in GaN-on-Si(111) system

Baijun Zhang, Yao Yao, Guilin Zhou, 2014 .

Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect transistors grown on Si substrate

Baijun Zhang, Yao Yao, Guilin Zhou, 2015 .

High Quality GaN Grown on Si(111) Using Fast Coalescence Growth

G. Wang, Hao Jiang, Yu Zhao, 2011, Japanese Journal of Applied Physics.

A novel normally-off GaN MISFET with an in-situ AlN space layer using selective area growth

Baijun Zhang, Liuan Li, Fan Yang, 2016, 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

The suppression of background doping in selective area growth technique for high performance normally-off AlGaN/GaN MOSFET

Baijun Zhang, Yao Yao, Guilin Zhou, 2015, Journal of Materials Science: Materials in Electronics.

Comparison of Two Types of Recessed-Gate Normally-Off AlGaN/GaN Heterostructure Field Effect Transistors

Baijun Zhang, Yao Yao, Y. Wen, 2012 .

Enhancing light extraction of GaN-based blue light-emitting diodes by a tuned nanopillar array

Juntao Li, C. Jin, Baijun Zhang, 2014 .

Quasi-vertical GaN heterojunction diodes with p-NiO anodes deposited by sputtering and post-annealing

Baijun Zhang, Liuan Li, Kang Zhang, 2020 .

Influence of adatom migration on wrinkling morphologies of AlGaN/GaN micro-pyramids grown by selective MOVPE*

Baijun Zhang, Zhisheng Wu, Yang Liu, 2017 .

120 GHz Frequency-Doubler Module Based on GaN Schottky Barrier Diode

Yuebo Liu, Baijun Zhang, Dehai Zhang, 2022, Micromachines.

Electrical properties of MOCVD-grown GaN on Si (111) substrates with low-temperature AlN interlayers

Baijun Zhang, Yao Yao, P. Xiang, 2013 .

Self-powered GaN ultraviolet photodetectors with p-NiO electrode grown by thermal oxidation

L. Wang, Baijun Zhang, J. Ao, 2018 .

Three‐Dimensional Covalent‐Organic Frameworks Loaded with Highly Dispersed Ultrafine Palladium Nanoparticles as Efficient Heterogeneous Catalyst

Xiaoying Lu, Jing Sun, Baijun Zhang, 2020, ChemNanoMat.

Double-Sided Sapphire Optrodes with Conductive Shielding Layers to Reduce Optogenetic Stimulation Artifacts

Tim C. Lei, P. Mak, M. Vai, 2022, Micromachines.

Influence of the Surface Material and Illumination upon the Performance of a Microelectrode/Electrolyte Interface in Optogenetics

Tim C. Lei, P. Mak, M. Vai, 2021, Micromachines.

Superfluorescence of Sub-Band States in C-Plane In0.1Ga0.9N/GaN Multiple-QWs

C. Ding, Baijun Zhang, Zesheng Lv, 2022, Nanomaterials.

High-temperature-grown quaternary AlInGaN epilayers and multiple quantum wells for ultraviolet emission

T. Egawa, T. Jimbo, Baijun Zhang, 2004 .

A chip-level electrothermal-coupled design model for high-power light-emitting diodes

Bingfeng Fan, Baijun Zhang, Baijun Zhang, 2010 .

Multi-channel AlGaN/GaN Schottky barrier diodes with a half through-hole

Baijun Zhang, S. Liu, Xinqiang Wang, 2021 .

Enhanced light emission from InGaN/GaN quantum wells by using surface plasmonic resonances of silver nanoparticle array

C. Jin, Baijun Zhang, Wan Wei, 2014 .

Enhancement of GaN-Based Light-Emitting Diodes Transferred From Si (111) Substrate Onto Electroplating Cu Submount With TiO$_{2}$/SiO$_{2}$–Al Omnidirectional Reflector

Baijun Zhang, P. Xiang, Ming-gang Liu, 2014, Journal of Display Technology.

Vertical-conducting InGaN/GaN multiple quantum wells LEDs with AlN/GaN distributed Bragg reflectors on Si(111) substrate

Baijun Zhang, P. Xiang, Ming-gang Liu, 2014 .

A review of GaN-based optoelectronic devices on silicon substrate

Yang Liu, Baijun Zhang, Baijun Zhang, 2014 .

Thin-film InGaN multiple-quantum-well light-emitting diodes transferred from Si (111) substrate onto copper carrier by selective lift-off

Takashi Jimbo, Hiroyasu Ishikawa, Takashi Egawa, 2005 .

The breakdown behavior of GaN epitaxial material on silicon

Baijun Zhang, Liuan Li, Fan Yang, 2016, 2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

The influences of AlN/GaN superlattices buffer on the characteristics of AlGaN/GaN-on-Si (111) template

Baijun Zhang, Yao Yao, Guilin Zhou, 2015 .

Improving the Quality of GaN on Si(111) Substrate with a Medium-Temperature/High-Temperature Bilayer AlN Buffer

C. Surya, K. Leung, Baijun Zhang, 2013 .

Dual-Color InGaN/GaN Pyramidal Micro Light-Emitting Diode Selectively Grown on SiO$_{2}$ Masked Si Substrate

Baijun Zhang, Zhisheng Wu, Yang Liu, 2016, Journal of Display Technology.

High-performance, single-pyramid micro light-emitting diode with leakage current confinement layer

Baijun Zhang, Jianliang Jiang, Ming-gang Liu, 2015 .

Electrically Driven Single Pyramid InGaN/GaN Micro Light-Emitting Diode Grown on Silicon Substrate

Baijun Zhang, Jianliang Jiang, P. Xiang, 2015, Journal of Display Technology.

A numerical study of the emission enhancement of light emitting diodes with an interfacial photonic crystal resonance reflector

Gang Wang, Yu Zhao, Baijun Zhang, 2009 .