Tomohisa Kato

M. Umeno, T. Jimbo, Ming-Jui Yang, 1994, Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC).

Simple physical model for the sign of the Hall coefficient in variable-range hopping conduction in heavily Al-doped p-type 4H-SiC

K. Kojima, H. Okumura, Tomohisa Kato, 2021, Japanese Journal of Applied Physics.

Temperature-Dependent Behavior of 4H-Silicon Carbide Surface Morphology Etched Using Chlorine Trifluoride Gas

Tomohisa Kato, Hitoshi Habuka, K. Tanaka, 2009 .

Anomalous Conduction between the Band and Nearest-Neighbor Hopping Conduction Regions in Heavily Al-Doped p-Type 4H-SiC

K. Kojima, H. Okumura, Tomohisa Kato, 2020 .

Control of temperature distribution to suppress macro-defects in solution growth of 4H-SiC crystals

H. Okumura, Tomohisa Kato, T. Mitani, 2019, Journal of Crystal Growth.

Polarity Inversion of SiC(0001) during the Al Doped PVT Growth

H. Okumura, Tomohisa Kato, Tomonori Miura, 2015 .

Micro-structural analysis of local damage introduced in subsurface regions of 4H-SiC wafers during chemo-mechanical polishing

M. Kitabatake, J. Senzaki, H. Okumura, 2016 .

Silicon carbide epitaxial layer growths on Acheson seed crystals from silicon melt

Tomohisa Kato, K. Arai, M. Khan, 2002 .

Effect of Dental Treatment on Activities of Daily Living in the Disabled Elderly

S. Sonoda, E. Saitoh, Tomohisa Kato, 2003 .

High Throughput SiC Wafer Polishing with Good Surface Morphology

Tomohisa Kato, K. Arai, S. Nishizawa, 2007 .

Dependence of conduction mechanisms in heavily Al-doped 4H-SiC epilayers on Al concentration

K. Kojima, H. Okumura, Tomohisa Kato, 2018, Applied Physics Express.

In situ x-ray topography of silicon carbide during crystal growth by sublimation method

W. Bahng, Tomohisa Kato, H. Yamaguchi, 2000 .

Dependences of contraction/expansion of stacking faults on temperature and current density in 4H-SiC p–i–n diodes

R. Iijima, H. Okumura, T. Shinohe, 2018 .

Short minority carrier lifetimes in highly nitrogen-doped 4H-SiC epilayers for suppression of the stacking fault formation in PiN diodes

H. Tsuchida, T. Kimoto, H. Okumura, 2016 .

Reduction of threading screw dislocations in 4H-SiC crystals by a hybrid method with solution growth and physical vapor transport growth

Tomohisa Kato, T. Mitani, Naoyoshi Komatsu, 2021 .

Nondestructive measurements of depth distribution of carrier lifetimes in 4H-SiC thick epitaxial layers using time-resolved free carrier absorption with intersectional lights.

K. Kojima, H. Okumura, Tomohisa Kato, 2020, The Review of scientific instruments.

Low VF 4H-SiC N-i-P diodes using newly developed low-resistivity p-type substrates

M. Sometani, J. Senzaki, K. Kojima, 2019, Japanese Journal of Applied Physics.

Growth of P-type 4H–SiC single crystals by physical vapor transport using aluminum and nitrogen co-doping

H. Okumura, Tomohisa Kato, K. Eto, 2017 .

Characterization of the Defect Evolution in Thick Heavily Al-Doped 4H-SiC Epilayers

H. Tsuchida, K. Kojima, H. Okumura, 2014 .

Comparative Study of Performance of SiC SJ-MOSFETs Formed by Multi-epitaxial Growth and Trench-filling Epitaxial Growth

M. Sometani, S. Harada, K. Kojima, 2022, 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Challenges of High-Performance and High-Reliablity in SiC MOS Structures

K. Fukuda, J. Senzaki, Atsushi Shimozato, 2012 .

Large Diameter and Long Length Growth of SiC Single Crystal

Tomohisa Kato, K. Arai, S. Nishizawa, 2004 .

Determination of carrier concentration by Fano interference of Raman scattering in heavily doped n-type 4H-SiC

K. Kojima, H. Okumura, Tomohisa Kato, 2012 .

Platinum additive impacts on vapor-liquid-solid growth chemical interface for high-quality SiC single crystal films

S. Maruyama, H. Okumura, Tomohisa Kato, 2020 .

Quantitative Analysis of Nanoscale Step Dynamics in High-Temperature Solution-Grown Single Crystal 4H-SiC via In Situ Confocal Laser Scanning Microscope

Shingo Maruyama, Tomohisa Kato, Hajime Okumura, 2017 .

Thermoelectric Properties of Single-Crystalline SiC and Dense Sintered SiC for Self-Cooling Devices

S. Yamaguchi, Y. Okamoto, Tomohisa Kato, 2011 .

Suppression of the Forward Degradation in 4H-SiC PiN Diodes by Employing a Recombination-Enhanced Buffer Layer

H. Tsuchida, T. Kimoto, H. Okumura, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

Screw and edge dislocations-induced internal strain around micropipes of 6H-SiC single crystals

T. Okuda, Tomohisa Kato, H. Ohsato, 2001 .

Injected carrier concentration dependence of the expansion of single Shockley-type stacking faults in 4H-SiC PiN diodes

H. Tsuchida, T. Kimoto, H. Okumura, 2018 .

Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes

H. Tsuchida, T. Kimoto, K. Fukuda, 2016 .

Temperature Dependence of Double Shockley Stacking Fault Behavior in Nitrogen-Doped 4h-Sic Studied by In-Situ Synchrotron X-Ray Topography

M. Tagawa, Tomohisa Kato, S. Harada, 2020, Acta Materialia.

Immobilization Phenomenon of Partials Surrounding Double Shockley Stacking Faults in Heavily Nitrogen Doped 4H-SiC Crystal with Thermal Anneal

H. Tsuchida, I. Kamata, H. Okumura, 2018, Materials Science Forum.

Structural analysis of double-layer Shockley stacking faults formed in heavily-nitrogen-doped 4H-SiC during annealing

H. Tsuchida, I. Kamata, T. Kimoto, 2017 .

Observation of double Shockley stacking fault expansion in heavily-nitrogen-doped 4H-SiC using PL technique

H. Tsuchida, I. Kamata, T. Kimoto, 2017 .

Difference of double Shockley-type stacking faults expansion in highly nitrogen-doped and nitrogen-boron co-doped n-type 4H-SiC crystals

H. Tsuchida, T. Ise, H. Okumura, 2017 .

Internal stress around micropipes in 6H-SiC substrates

Manijeh Razeghi, H. Ohsato, Tomohisa Kato, 1999, Photonics West.

Growth of 4H-SiC in Current-Controlled Liquid Phase Epitaxy

H. Okumura, Tomohisa Kato, Tetsuo Takahashi, 2013 .

Observation of surface polarity dependent phonons in SiC by deep ultraviolet Raman spectroscopy

H. Okumura, Tomohisa Kato, H. Harima, 2007 .

Determination of free carrier density in the low doping regime of 4H-SiC by Raman scattering

H. Tsuchida, K. Kojima, H. Okumura, 2008 .

Evaluation of the increase in threading dislocation during the initial stage of physical vapor transport growth of 4H-SiC

S. Tsukimoto, H. Okumura, Tomohisa Kato, 2018 .

Spatial Distribution of Carrier Concentration in 4H-SiС Crystal Grown by Solution Method

K. Aoyagi, M. Tagawa, Zhen Wang, 2016 .

Sign of Hall coefficient in nearest-neighbor hopping conduction in heavily Al-doped p-type 4H-SiC

K. Kojima, H. Okumura, Tomohisa Kato, 2020, Japanese Journal of Applied Physics.

Transition of conduction mechanism from band to variable-range hopping conduction due to Al doping in heavily Al-doped 4H-SiC epilayers

K. Kojima, H. Okumura, Tomohisa Kato, 2019, Japanese Journal of Applied Physics.

Modification of the surface morphology of 4H-SiC by addition of Sn and Al in solution growth with SiCr solvents

H. Okumura, Tomohisa Kato, T. Mitani, 2017 .

Simultaneous growth of two differently oriented GaN epilayers on (1 1 · 0) sapphire II. A growth model of (0 0 · 1) and (10 · 0) GaN

M. Razeghi, T. Okuda, A. Saxler, 1998 .

Simultaneous growth of two different oriented GaN epilayers on (1 1 . 0) sapphire. I. Morphology and orientation

M. Razeghi, T. Okuda, A. Saxler, 1997 .

Morphology of twinned GaN grown on (11·0) sapphire substrates

M. Razeghi, T. Okuda, A. Saxler, 1997 .

Epitaxial orientation and a growth model of (0 0·1) GaN thin film on (1 1 1) spinel substrate

T. Okuda, Tomohisa Kato, H. Ohsato, 1998 .

Expansion and contraction of single Shockley stacking faults in SiC epitaxial layer under ultraviolet irradiation

H. Shiomi, H. Okumura, Tomohisa Kato, 2019, Applied Physics Express.

Local Strain Distribution and Microstructure of Grinding-Induced Damage Layers in SiC Wafer

S. Tsukimoto, J. Senzaki, K. Kojima, 2018, Journal of Electronic Materials.

Relationship between depth of basal-plane dislocations and expanded stacking faults by application of forward current to 4H–SiC p-i-n diodes

J. Senzaki, K. Kojima, H. Okumura, 2019, Applied Physics Express.

Reducing warpage of thick 4H-SiC epitaxial layers by grinding the back of the substrate

S. Tsukimoto, K. Kojima, H. Okumura, 2019, Japanese Journal of Applied Physics.

AlN bulk single crystal growth on 6H-SiC substrates by sublimation method

K. Sanada, H. Okumura, Tomohisa Kato, 2010 .

Chlorine Trifluoride Gas Etching Design for Quickly and Uniformly Removing a Thick C-Face 4H-Silicon Carbide Layer

Tomohisa Kato, Hitoshi Habuka, Yoshinao Takahashi, 2022, ECS Advances.

Solvent Design for High-Purity SiC Solution Growth

M. Tagawa, Tomohisa Kato, S. Harada, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

Origin of the Internal Stress Around the Micropipe of 6H-SiC Single Crystal

Takashi Okuda, Tomohisa Kato, T. Okuda, 2000 .

Dislocation constraint by etch back process of seed crystal in the SiC sublimation growth

Tomohisa Kato, K. Arai, S. Nishizawa, 2001 .

Depth Distribution of Defects in SiC PiN Diodes Formed Using Ion Implantation or Epitaxial Growth

Tomohisa Kato, Shuhei Fukaya, Y. Yonezawa, 2021 .

Planarization of 6-Inch 4H-SiC Wafer Using Catalyst-Referred Etching

Y. Sano, Tomohisa Kato, K. Yamauchi, 2014 .

20 kV-Class Ultra-High Voltage 4H-SiC n-IE-IGBTs

M. Sometani, H. Okumura, Tomohisa Kato, 2019 .

Direct Visualization of Kinetic Reversibility of Crystallization and Dissolution Behavior at Solution Growth Interface of SiC in Si-Cr Solvent

S. Maruyama, H. Okumura, Tomohisa Kato, 2021, Surfaces and Interfaces.

Effect of aluminum addition on the surface step morphology of 4H–SiC grown from Si–Cr–C solution

H. Okumura, Tomohisa Kato, Tetsuo Takahashi, 2015 .

Massive reduction of threading screw dislocations in 4H-SiC crystals grown by a hybrid method combined with solution growth and physical vapor transport growth on higher off-angle substrates

Tomohisa Kato, T. Mitani, K. Momose, 2021 .

Application of Defect Conversion Layer by Solution Growth for Reduction of TSDs in 4H-SiC Bulk Crystals by PVT Growth

H. Okumura, Tomohisa Kato, T. Mitani, 2019, Materials Science Forum.

Growth rate and surface morphology of 4H–SiC crystals grown from Si–Cr–C and Si–Cr–Al–C solutions under various temperature gradient conditions

H. Okumura, Tomohisa Kato, Tetsuo Takahashi, 2014 .

Enlargement Growth of Large 4H-SiC Bulk Single Crystal

H. Okumura, Tomohisa Kato, K. Arai, 2011 .

Influence of Additives on Surface Smoothness and Polytype Stability in Solution Growth of n-Type 4H-SiC

H. Okumura, Tomohisa Kato, T. Mitani, 2017, Materials Science Forum.

Morphological stability of 4H-SiC crystals in solution growth on {0001} and {11̅0m} surfaces

H. Okumura, Tomohisa Kato, T. Mitani, 2017 .

Growth Rate and Surface Morphology of 4H-SiC Single Crystal Grown under Various Supersaturations Using Si-C Solution

H. Okumura, Tomohisa Kato, Tetsuo Takahashi, 2013 .

Correlation between reliability of thermal oxides and dislocations in n-type 4H-SiC epitaxial wafers

Kenji Fukuda, Tomohisa Kato, K. Fukuda, 2006 .

The photoelastic constant and internal stress around micropipe defects of 6H-SiC single crystal

Takashi Okuda, Tomohisa Kato, T. Okuda, 1999 .

Effects of Al addition to Si-based flux on the growth of 4H-SiC films by vapour–liquid–solid pulsed laser deposition

S. Maruyama, H. Okumura, Tomohisa Kato, 2017 .

4H-SiC Growth from Si-Cr-C Solution under Al and N Co-Doping Conditions

H. Okumura, Tomohisa Kato, Tetsuo Takahashi, 2015 .

Change in Surface Morphology by Addition of Impurity Elements in 4H-SiC Solution Growth with Si Solvent

H. Okumura, Tomohisa Kato, Tetsuo Takahashi, 2015 .

Effect of Forced Convection by Crucible Design in Solution Growth of SiC Single Crystal

H. Okumura, Tomohisa Kato, T. Ujihara, 2015 .

Control of Void Formation in 4H-SiC Solution Growth

H. Okumura, Tomohisa Kato, Tetsuo Takahashi, 2012 .

Growth of Low Resistivity p-Type 4H-SiC Crystals by Sublimation with Using Aluminum and Nitrogen Co-Doping

H. Okumura, Tomohisa Kato, K. Eto, 2016 .

Flux-Controlled Sublimation Growth by an Inner Guide-Tube

W. Bahng, Tomohisa Kato, K. Arai, 2002 .

Effect of Al addition to Si–Ni flux on pulsed laser deposition of SiC thin films

S. Maruyama, H. Okumura, Tomohisa Kato, 2016 .

Influences of Solution Flow and Lateral Temperature Distribution on Surface Morphology in Solution Growth of SiC

H. Okumura, Tomohisa Kato, T. Ujihara, 2015 .

Microstructural Analysis of Damaged Layer Introduced during Chemo-Mechanical Polishing

M. Kitabatake, S. Tsukimoto, K. Kojima, 2014 .

Immobilization of Partial Dislocations Bounding Double Shockley Stacking Faults in 4h-Sic Observed by in Situ Synchrotron X-Ray Topography

M. Dudley, M. Tagawa, Tomohisa Kato, 2021, SSRN Electronic Journal.

Growth Study of p-Type 4H-SiC with Using Aluminum and Nitrogen Co-Doping by 2-Zone Heating Sublimation Method

H. Okumura, Tomohisa Kato, Tomonori Miura, 2015 .

High-Quality SiC Bulk Single Crystal Growth Based on Simulation and Experiment

W. Bahng, Tomohisa Kato, H. Yamaguchi, 2004 .

Effect of heat transfer on macroscopic and microscopic crystal quality in silicon carbide sublimation growth

Tomohisa Kato, K. Arai, S. Nishizawa, 2007 .

Stress Analysis of SiC Bulk Single Crystal Growth by Sublimation Method

Tomohisa Kato, K. Arai, S. Nishizawa, 2003 .

Effects of Dislocations on Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer

K. Fukuda, J. Senzaki, Atsushi Shimozato, 2005 .

AlN bulk single crystal growth on SiC and AlN substrates by sublimation method

K. Sanada, H. Okumura, Tomohisa Kato, 2010, International Conference on Indium Phosphide and Related Materials.

Origin analysis of expanded stacking faults by applying forward current to 4H-SiC p–i–n diodes

J. Senzaki, K. Kojima, H. Okumura, 2017 .

13-kV, 20-A 4H-SiC PiN Diodes for Power System Applications

Kenji Fukuda, Toshihiko Hayashi, Makoto Mizukami, 2014 .

Investigation of In-Grown Dislocations in 4H-SiC Epitaxial Layers

K. Kojima, H. Okumura, Tomohisa Kato, 2006 .

Defect and Growth Analysis of SiC Bulk Single Crystals with High Nitrogen Doping

Tomohisa Kato, K. Arai, S. Nishizawa, 2007 .

Observation of multilayer Shockley-type stacking fault formation during process of epitaxial growth on highly nitrogen-doped 4H-SiC substrate

H. Okumura, Tomohisa Kato, H. Osawa, 2019, Japanese Journal of Applied Physics.

Growth of Low Resistivity n-Type 4H-SiC Bulk Crystals by Sublimation Method Using Co-Doping Technique

H. Okumura, Tomohisa Kato, Tomonori Miura, 2014 .

Reducing Stacking Faults in Highly Doped N-Type 4H-SiC Crystal

S. Ito, K. Kojima, J. Kojima, 2011 .

Characterization of double Shockley-type stacking faults formed in lightly doped 4H-SiC epitaxial films

J. Senzaki, K. Kojima, H. Okumura, 2018 .

Determination of Etch Rate Behavior of 4H–SiC Using Chlorine Trifluoride Gas

Y. Fukai, H. Okumura, Tomohisa Kato, 2007 .

Characterization of stacking faults with emission wavelengths of over 500 nm formed in 4H-SiC epitaxial films

J. Senzaki, K. Kojima, H. Okumura, 2017 .

Chlorine Trifluoride Gas Transport and Etching Rate Distribution in Silicon Carbide Dry Etcher

Tomohisa Kato, Hitoshi Habuka, Ken Nakagomi, 2015 .

Non-Plasma Dry Etcher Design for 200 mm-Diameter Silicon Carbide Wafer

Tomohisa Kato, Kenta Irikura, Hitoshi Habuka, 2019 .

Etching Rate Profile of C-Face 4H-SiC Wafer Depending on Total Gas Flow Rate of Chlorine Trifluoride and Nitrogen

Tomohisa Kato, Kenta Irikura, Hitoshi Habuka, 2019 .

Chlorine Trifluoride Gas Distributor Design for Single-Crystalline C-Face 4H-Silicon Carbide Wafer Etcher

Tomohisa Kato, Kenta Irikura, Hitoshi Habuka, 2019, Materials Science Forum.

4H-Silicon Carbide Wafer Surface after Chlorine Trifluoride Gas Etching

Tomohisa Kato, Hitoshi Habuka, Shogo Okuyama, 2018, Materials Science Forum.

A Method to Adjust Polycrystalline Silicon Carbide Etching Rate Profile by Chlorine Trifluoride Gas

Tomohisa Kato, Hitoshi Habuka, Shogo Okuyama, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

Formation and Removal of Carbon Film on Silicon Carbide Surface Using Chlorine Trifluoride Gas

Tomohisa Kato, Hitoshi Habuka, Yoshinao Takahashi, 2016 .

Development of Silicon Carbide Dry Etcher Using Chlorine Trifluoride Gas

Tomohisa Kato, Hitoshi Habuka, D. Yajima, 2014 .

Density of Etch Pits on C-Face 4H-SiC Surface Produced by ClF3 Gas

Tomohisa Kato, Hitoshi Habuka, Toshimitsu Kanai, 2012 .

Density and Behavior of Etch Pits on C-Face 4H-SiC Surface Produced by CIF3 Gas

Tomohisa Kato, Hitoshi Habuka, Toshimitsu Kanai, 2012 .

4H-SiC Surface Morphology Etched Using ClF3 Gas

Tomohisa Kato, Hitoshi Habuka, K. Tanaka, 2010 .

4H Silicon Carbide Etching Using Chlorine Trifluoride Gas

Y. Fukai, H. Okumura, Tomohisa Kato, 2008 .

Etching Rate Behavior of 4H-Silicon Carbide Using Chlorine Trifloride Gas

Y. Fukai, H. Okumura, Tomohisa Kato, 2008 .

Etch Pits on 4H-SiC Surface Produced by ClF3 Gas

Tomohisa Kato, Hitoshi Habuka, K. Tanaka, 2011 .

Relationship between Temperature Dependencies of Resistivity and Hall Coefficient in Heavily Al-Doped 4H-SiC Epilayers

K. Kojima, H. Okumura, Tomohisa Kato, 2019, Materials Science Forum.

Comparison of Conduction Mechanisms in Heavily Al-Doped 4H-SiC and Heavily Al- and N-Codoped 4H-SiC

K. Kojima, H. Okumura, Tomohisa Kato, 2018, Materials Science Forum.

Reliability of Gate Oxides on 4H-SiC Epitaxial Surface Planarized by CMP Treatment

M. Kitabatake, J. Senzaki, Atsushi Shimozato, 2013 .

Effect of Radiation in Solid during SiC Sublimation Growth

Tomohisa Kato, S. Nishizawa, S. Nakashima, 2006 .

Growth and Evaluation of High Quality SiC Crystal by Sublimation Method

Tomohisa Kato, H. Yamaguchi, K. Arai, 2002 .

Numerical Simulation of Heat and Mass Transfer in SiC Sublimation Growth

Tomohisa Kato, K. Arai, S. Nishizawa, 2002 .

In-situ Observation of SiC Bulk Single Crystal Growth by X-Ray Topography

Tomohisa Kato, H. Yamaguchi, K. Arai, 2000 .

X-ray Topographic Study of SiC Crystal at High Temperature

W. Bahng, Tomohisa Kato, H. Yamaguchi, 2000 .

SiC Single Crystal Growth Rate Measurement by In-Situ Observation using the Transmission X-Ray Technique

Tomohisa Kato, H. Yamaguchi, K. Arai, 2000 .

In-situ observation of silicon carbide sublimation growth by X-ray topography

Tomohisa Kato, H. Yamaguchi, K. Arai, 2001 .

MOCVD growth of high-quality AlGaAs on Si substrates for high-efficiency solar cells

Takashi Jimbo, Chunlin Shao, Tomohisa Kato, 1997 .

Electric Discharge Machining for Silicon Carbide and Related Materials

Hideaki Takahashi, S. Yamaguchi, Tomohisa Kato, 2008 .

Structural analysis of interfacial dislocations and expanded single Shockley-type stacking faults in forward-current degradation of 4H-SiC p-i-n diodes

J. Senzaki, K. Kojima, H. Okumura, 2019, Japanese Journal of Applied Physics.

Initiation of Shockley Stacking Fault Expansion in 4H-SiC P-i-N Diodes

R. Iijima, H. Okumura, Tomohisa Kato, 2019, Materials Science Forum.

Development of ultrahigh voltage SiC power devices

K. Takao, T. Kimoto, D. Okamoto, 2014, 2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE ASIA).

Extension of Stacking Faults in 4H-SiC pn Diodes under a High Current Pulse Stress

H. Okumura, Tomohisa Kato, K. Hamada, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

Defect Characterization of 4H-SiC Bulk Crystals Grown on Micropipe Filled Seed Crystals

K. Kojima, Tomohisa Kato, K. Arai, 2005 .