S. Cheung

发表

Extraction of Schottky diode parameters from forward current-voltage characteristics

N. Cheung, S. Cheung, 1986 .

Correlation between solid-state reaction and electrical properties of the Rh/GaAs Schottky contact

E. Haller, T. Sands, S. Cheung, 1987 .

High‐temperature annealing characteristics of tungsten and tungsten nitride Schottky contacts to GaAs under different annealing conditions

E. Haller, S. Cheung, K. Yu, 1988 .

Refractory metal nitride rectifying contacts on GaAs

N. Cheung, S. Cheung, C. Liang, 1987 .

Thermal stability and barrier height enhancement for refractory metal nitride contacts on GaAs

N. Cheung, S. Cheung, C. Liang, 1987 .

Schottky barrier degradation of the W/GaAs system after high-temperature annealing

E. Haller, N. Cheung, T. Sands, 1986 .

The effects of annealing encapsulant and ambient on the barrier height of WNx /GaAs contact and self-aligned gate field effect transistor fabrication

E. Haller, N. Cheung, S. Cheung, 1988 .