J. Torvik

发表

Photovoltaic manufacturing: Present status, future prospects, and research needs

Vasilis Fthenakis, Juanita Kurtin, Ingrid Repins, 2011 .

Cathodoluminescence study of erbium and oxygen coimplanted gallium nitride thin films on sapphire substrates

Fereydoon Namavar, Jacques I. Pankove, R. J. Feuerstein, 1995 .

The effect of threading dislocations, Mg doping, and etching on the spectral responsivity in GaN-based ultraviolet detectors

S. Nakamura, J. Pankove, J. Torvik, 1999 .

First demonstration of 4H-SiC RF bipolar junction transistors on a semi-insulating substrate with f/sub T//f/sub MAX/ of 7/5.2 GHz

J. Torvik, I. Perez-Wurfl, Chih-Fang Huang, 2005, IEEE MTT-S International Microwave Symposium Digest, 2005..

Molecular doping of gallium nitride

J. Pankove, J. Torvik, I. Grzegory, 1999 .

4H-SiC bipolar junction transistor with high current and power density

J. Torvik, I. Perez-Wurfl, B. Zeghbroeck, 2003 .

Electrical characterization of GaN/SiC n-p heterojunction diodes

J. Pankove, T. Moustakas, J. Torvik, 1998 .

GaN/SiC heterojunction bipolar transistors

J. Pankove, J. Torvik, B. Zeghbroeck, 2000 .

Interfacial effects during GaN growth on 6H-SiC

J. Pankove, C. Magee, J. Torvik, 1999 .

Optical characterization of GaN/SiC n-p heterojunctions and p-SiC

J. Pankove, J. Torvik, C. Qiu, 1998 .

The Doping and Characterization of Erbium-Implanted Gan

F. Namavar, R. Feuerstein, J. Pankove, 1997 .

Luminescence at 1539 nm from erbium and oxygen implanted GaN

F. Namavar, R. Feuerstein, J. Pankove, 1996, 1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings.

First Demonstration of 4H-SiC RF Bipolar Junction Transistors on a Semi-insulating Substrate with fT/fMAX of 7/5.2 GHz

J. Torvik, I. Perez-Wurfl, Chih-Fang Huang, 2005 .

Analysis of Power Dissipation and High Temperature Operation in 4H-SiC Bipolar Junction Transistors with 4.9 MW/cm2 Power Density Handling Ability

J. Torvik, I. Perez-Wurfl, B. van Zeghbroeck, 2004 .

Optimized reactive ion etch process for high performance SiC bipolar junction transistors

J. Torvik, I. Perez-Wurfl, B. Zeghbroeck, 2007 .

A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C

Jacques I. Pankove, J. T. Torvik, J. Pankove, 1999 .

ELECTROLUMINESCENCE FROM ERBIUM AND OXYGEN COIMPLANTED GAN

F. Namavar, R. Feuerstein, J. Pankove, 1996 .

PHOTO-, CATHODO-, AND ELECTROLUMINESCENCE FROM ERBIUM AND OXYGEN CO-IMPLANTED GAN

F. Namavar, R. Feuerstein, J. Pankove, 1997 .

Annealing Study of Erbium and Oxygen Implanted Gallium Nitride

F. Namavar, R. Feuerstein, J. Pankove, 1996 .

OPTICAL PROPERTIES OF GAN GROWN OVER SIO2 ON SIC SUBSTRATES BY MOLECULAR BEAM EPITAXY

J. Pankove, T. Moustakas, J. Torvik, 1998 .

Chapter 2 – Dopants in GaN

J. Torvik, 2000 .

GaN/SiC HBTs and related issues

J. Pankove, J. Torvik, B. Zeghbroeck, 2000 .

Luminescence studies of erbium-doped gallium nitride

R. Feuerstein, J. Pankove, J. Torvik, 1994, Proceedings of 5th European Quantum Electronics Conference.