D. Mencaraglia

发表

Comparison of optical and electrical gap of electrodeposited CuIn(S,Se)2 determined by spectral photo response and I–V–T measurements

J. P. Connolly, A. Darga, J. Guillemoles, 2007 .

Charge Transport and Contact Resistance in Coplanar Devices Based on Colloidal Polyaniline Dispersion

J. Vanel, Y. Bonnassieux, D. Mencaraglia, 2016 .

Defects in solid phase and laser crystallised polysilicon thin film transistors

D. Pribat, D. Mencaraglia, P. Legagneux, 1998 .

Helium Dilution as a Means to Obtain a Low Defect Density Hydrogenated Amorphous Silicon at High Deposition Rates in RF Glow-Discharge Systems

P. Cabarrocas, J. Kleider, Z. Djebbour, 1991 .

Comparison of transport and defects properties in hydrogenated polymorphous and amorphous silicon

M. Mehring, R. Brüggemann, P. Cabarrocas, 2002 .

Wide range local resistance imaging on fragile materials by conducting probe atomic force microscopy in intermittent contact mode

K. Bouzehouane, Y. Bonnassieux, P. Chrétien, 2016 .

Characterization of ITO/CuPc/AI and ITO/ZnPc/Al structures using optical and capacitance spectroscopy

P. Destruel, D. Mencaraglia, I. Séguy, 2003 .

Admittance spectroscopy defect density of electrodeposited CuIn(S,Se)2 and its correlation with solar cells performances

J. P. Connolly, D. Lincot, A. Darga, 2008 .

Analysis of electronic transport properties of thin film CuIn(S,Se)2 solar cells based on electrodeposition

J. P. Connolly, A. Darga, V. Bermudez, 2008 .

On Charge Carrier Recombination in Sb2S3 and Its Implication for the Performance of Solar Cells

G. Dennler, B. O'Regan, A. Darga, 2013 .

Subgap modulated photocurrent spectroscopy and its application to the study of the solar cell absorber defect distributions

Z. Djebbour, D. Mencaraglia, A. Migan-Dubois, 2010 .

Sub-Gap Modulated Photo Current Spectroscopy performed on Cu(Inx,Ga1 − x)(Sey,S1 − y)2 based solar cells

N. Barreau, D. Lincot, A. Darga, 2008 .

Two step wet surface treatment influence on the electronic properties of Cu(In,Ga)Se2 solar cells

J. P. Connolly, Olivier Roussel, D. Lincot, 2008 .

Admittance spectroscopy of cadmium free CIGS solar cells heterointerfaces

D. Lincot, A. Darga, N. Naghavi, 2006 .

Electrical characterization of ITO/CuPc/Al diodes using temperature dependent capacitance spectroscopy and I–V measurements

P. Destruel, D. Mencaraglia, I. Séguy, 2004 .

Studies of buried interfaces Cu(In,Ga)Se2/CdS XPS and electrical investigations

D. Lincot, J. Guillemoles, A. Etcheberry, 2003 .

Admittance spectroscopy for non-crystalline thin film devices characterization: comparison of Cu(In,Ga)Se2 and a-Si:H cases

Z. Djebbour, D. Mencaraglia, S. Saad, 2003 .

XPS and electrical studies of buried interfaces in Cu(In,Ga)Se2 solar cells

D. Lincot, J. Guillemoles, A. Etcheberry, 2002 .

Interface Defects in CIGS-Based Solar Cells From Coupled Electrical and Chemical Points of View

D. Lincot, J. Guillemoles, A. Etcheberry, 2001 .

Investigation of the metastability behavior of CIGS based solar cells with ZnMgO-Zn(S,O,OH) window-buffer layers

G. Renou, D. Lincot, A. Darga, 2011 .

Electrical characterization of CIGSe solar cells metastability with Zn(S,O,OH)–ZnMgO interface buffer layers

G. Renou, D. Lincot, A. Darga, 2010 .

Comparative study of Cu(In,Ga)Se2/(PVD)In2S3 and Cu(In,Ga)Se2/(CBD)CdS heterojunction based solar cells by admittance spectroscopy, current–voltage and spectral response measurements

N. Barreau, A. Darga, Z. Djebbour, 2008 .

Study of traps in P3HT:PCBM based organic solar cells using fractional thermally stimulated current (FTSC) technique

Yunfei Zhou, A. Darga, M. Krueger, 2011 .

A new treatment of Schottky barrier capacitance-voltage characteristics: Discussion of usual assumptions and determination of the deep gap states density in a-Si1−xGex:H alloys

J. Kleider, Z. Djebbour, D. Mencaraglia, 1989 .

Analysis of efficiency limiting processes in thin film Cu(In,Ga)(S,Se)2 electrodeposited solar cells

N. Naghavi, O. Kerrec, Z. Djebbour, 2010, 1006.1058.

Bulk and surface structural properties of Si1−x−yGexCy layers processed on Si(001) by pulsed laser induced epitaxy

C. Clerc, D. Bouchier, F. Houzé, 1996 .

Infrared and resonance Raman spectroscopic studies of semiconductors - doped amorphous silicon

D. Mencaraglia, P. V. Huong, J. Baixeras, 1984 .

Thermal bias annealing experiments on aluminum/silicon nitride/hydrogenated amorphous silicon top gate structures

J. Kleider, D. Mencaraglia, C. Longeaud, 1996 .

Optimisation of the hydrogen content in a-Si:H deposited at high rate by dc magnetron sputtering

J. Kleider, Z. Djebbour, D. Mencaraglia, 1993 .

Evolution of the density of states profile above midgap in a-SiGe:H alloys from complementary transport measurements

J. Kleider, Z. Djebbour, D. Mencaraglia, 1989 .

Influence of hydrogen on electronic transport in dc triode sputtered amorphous silicon

E. Arene, D. Mencaraglia, C. Longeaud, 1984 .

Wafer-bonding and film transfer for advanced PV cells

D. Mencaraglia, C. Jaussaud, E. Jalaguier, 2003 .

III–V Solar Cells

J. P. Connolly, D. Mencaraglia, 2013, 1301.1278.

Enhanced photoconductivity in nitrogen-doped amorphous silicon prepared by d.c. sputtering

D. Mencaraglia, J. Baixeras, P. Andro, 1978 .

Transition from diffusive to ballistic capture related to hydrogen incorporation in amorphous silicon

J. Kleider, D. Mencaraglia, 1987 .

Oxygen adsorption-desorption effect on the electrical properties of a-Si:H layers

D. Mencaraglia, M. Aoucher, T. Mohammed‐Brahim, 1995 .

Carrier collection efficiency of Schottky diodes on triode dc sputtered hydrogenated amorphous silicon: Transport properties of holes

E. Arene, D. Mencaraglia, J. Baixeras, 1984 .

Electrical Properties of Amorphous Silicon Transistors and MIS‐Devices: Comparative Study of Top Nitride and Bottom Nitride Configurations

Jean-Paul Kleider, Joseph Richard, Alain Rolland, 1993 .

Electronic properties of silicon thin films prepared by hot-wire chemical vapour deposition

R. Brüggemann, J. Kleider, D. Mencaraglia, 2000 .

Growth of high quality micrometer scale GaAs/Si crystals from (001) Si nano-areas in SiO2

N. Cherkashin, D. Bouchier, J. Alvarez, 2014 .

Coil-to-sample distance influence on contactless QSSPC effective lifetime measurements : application to silicon wafers passivated by thin amorphous layers

J. Alvarez, J. Kleider, Z. Djebbour, 2011 .

High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed

J. P. Connolly, N. Cherkashin, D. Bouchier, 2016, Scientific Reports.

Designing III–V multijunction solar cells on silicon

J. P. Connolly, D. Bouchier, D. Mencaraglia, 2013, 1312.2908.

Laser-induced deposition of aluminium on gallium arsenide and silicon nitride from trimethylamine alane

D. Tonneau, D. Mencaraglia, J. Bourée, 1993 .

Laser-induced deposition of aluminium on gallium arsenide from trimethylamine alane

D. Tonneau, D. Mencaraglia, J. Bourée, 1993 .

Multiscale in modelling and validation for solar photovoltaics

J. P. Connolly, J. C. Rimada, Frederic Cortés Juan, 2018 .

Field-profile determination in amorphous Si−Ge alloy Schottky barriers

J. Kleider, D. Mencaraglia, C. Longeaud, 1991 .

Theoretical study of the quasistatic capacitance of metal–insulator–semiconductor structures in amorphous semiconductors

J. Kleider, D. Mencaraglia, 1995 .

Admittance frequency dependence of Schottky barriers formed on dc triode sputtered amorphous silicon: Hydrogen influence on deep gap state characteristics

J. Kleider, D. Mencaraglia, A. Amaral, 1985 .

Hydrogen, microstructure and defect density in hydrogenated amorphous silicon

P. Cabarrocas, J. Kleider, Z. Djebbour, 1992 .

Comparison of Al/SiN/a-Si:H and Al/SiO2/a-Si:H top gate structures under thermal bias stresses

J. Kleider, D. Mencaraglia, Fadi Dayoub, 1997 .

Hydrogen influence on the optoelectronic properties of triode dc sputtered amorphous silicon: Disorder effects on deep gap states characteristics

J. Kleider, D. Mencaraglia, J. Baixeras, 1985 .

Influence of Ga content on defects in CuInxGa1−xSe2 based solar cell absorbers investigated by sub gap modulated photocurrent and admittance spectroscopy

Nicolas Barreau, John Kessler, Zakaria Djebbour, 2011 .

Application of abrupt cut-off models in the analysis of the capacitance spectra of conjugated polymer devices

D. Mencaraglia, R. Faria, L. F. Santos, 2009 .

GaAs microcrystals selectively grown on silicon: Intrinsic carbon doping during chemical beam epitaxy with trimethylgallium

J. P. Connolly, D. Bouchier, M. Descoins, 2017, Journal of Applied Physics.

Temperature dependent impedance spectroscopy on polyaniline based devices

D. Mencaraglia, L. Santos, R. Faria, 2006, IEEE Transactions on Dielectrics and Electrical Insulation.

Toward high efficiency ultra-thin CIGSe based solar cells using light management techniques

Daniel Lincot, Muriel Bouttemy, Arnaud Etcheberry, 2012, OPTO.

Influence of Cu off-stoichiometry on wide band gap CIGSe solar cells

L. Arzel, N. Barreau, A. Darga, 2011 .

Study of the electronic properties of wide band gap CIGSe solar cells: Influence of copper off-stoichiometry

L. Arzel, N. Barreau, A. Darga, 2012 .

Determination of the density of states in p-doped hydrogenated amorphous silicon by means of the modulated photocurrent experiment

J. Kleider, D. Mencaraglia, C. Longeaud, 1993 .