H. Ishiwara

发表

Enhancement of lateral solid phase epitaxial growth in evaporated amorphous Si films by phosphorus implantation

Hiroshi M. Yamamoto, H. Ishiwara, S. Furukawa, 1985 .

Current status of ferroelectric-gate Si transistors and challenge to ferroelectric-gate CNT transistors

Hiroshi Ishiwara, H. Ishiwara, 2009 .

Impact of HfTaO Buffer Layer on Data Retention Characteristics of Ferroelectric-Gate FET for Nonvolatile Memory Applications

Minghua Tang, Zhi Ye, H. Ishiwara, 2011, IEEE Transactions on Electron Devices.

Proposal of Adaptive-Learning Neuron Circuits with Ferroelectric Analog-Memory Weights

H. Ishiwara, 1993 .

Roles of Buffer Layers in Epitaxial Growth of SrTiO3 Films on Silicon Substrates

H. Ishiwara, B. Moon, 1994 .

High Quality Ultrathin La2O3 Films for High-k Gate Insulator

H. Iwai, H. Ishiwara, E. Tokumitsu, 2001, 31st European Solid-State Device Research Conference.

Current Status of Ferroelectric Random-Access Memory

Hiroshi Ishiwara, Yoshihiro Arimoto, Y. Arimoto, 2004 .

Study on Stability of Pentacene-Based Metal–Oxide–Semiconductor Diodes in Air Using Capacitance–Voltage Characteristics

Y. Yamashita, M. Akhtaruzzaman, H. Ishiwara, 2009 .

Ferroelectric random access memories : fundamentals and applications

M. Okuyama, Y. Arimoto, H. Ishiwara, 2004 .

Characterization of Nonvolatile Memory Behaviors of Al/Poly(vinylidene fluoride–trifluoroethylene)/Al2O3/ZnO Thin-Film Transistors

Sung-Min Yoon, Hiroshi Ishiwara, Doo-Hee Cho, 2010 .

Drain Current Characteristics of Ferroelectric Gate-All-Around Si Nanowire Transistors Based on Drift/Diffusion Transport Theory

H. Ishiwara, S. Ohmi, Masakazu Ibata, 2012 .

Theoretical Considerations on Lateral Spread of Implanted Ions

Hiroshi Ishiwara, Hideki Matsumura, Seijiro Furukawa, 1972 .

A New Circuit Simulation Model of Ferroelectric Capacitors

Y. Arimoto, H. Ishiwara, T. Tamura, 2002 .

Nonvolatile ferroelectric-gate field-effect transistors using SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si structures

H. Ishiwara, E. Tokumitsu, Gen Fujii, 1999 .

Range Distribution Theory Based on Energy Distribution of Implanted Ions

H. Ishiwara, S. Furukawa, 1972 .

Epitaxial Growth of SrTiO3 Films on Si(100) Substrates Using a Focused Electron Beam Evaporation Method

H. Ishiwara, H. Mori, 1991 .

Antiphase disorder in epitaxial GaAs films grown on CaxSr1−xF2 (100) with higher crystallographic symmetry

H. Ishiwara, S. Furukawa, K. Tsutsui, 1986 .

Large Remanent Polarization in Sm-Substituted BiFeO3 Thin Film Formed by Chemical Solution Deposition

Z. Zhong, H. Ishiwara, Y. Sugiyama, 2010 .

Oriented Growth of SrTiO 3 Films on Si(100) Substrates Using In—situ Cleaning By Excited Hydrogen

H. Ishiwara, K. Azuma, 1988 .

Hysteresis characteristics of vacuum-evaporated ferroelectric PbZr0.4Ti0.6O3 films on Si(111) substrates using CeO2 buffer layers

H. Ishiwara, E. Tokumitsu, Byung-Eun Park, 1997 .

PAPER Special Section on Fundamentals and Applications of Advanced Semiconductor Devices Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors

H. Ishiwara, S. Ohmi, 2012 .

Adaptive-Learning Neuron Integrated Circuits Using Metal-Ferroelectric (SrBi Ta O )-Semiconductor (MFS) FET's

H. Ishiwara, Sung‐Min Yoon, E. Tokumitsu, 1999 .

Electrical properties of ferroelectric BaMgF4 films grown on GaAs substrates using AlGaAs buffer layer

Tomoki Hayashi, H. Ishiwara, E. Tokumitsu, 1997 .

Ferroelectric Properties and Crystalline Structures of BaMgF 4 Thin Films Grown on Pt(111)/SiO 2 /Si(100)

H. Ishiwara, E. Tokumitsu, K. Aizawa, 1997 .

Device characterization of high-electron-mobility transistors with ferroelectric-gate structures

H. Ishiwara, E. Tokumitsu, S. Ohmi, 1996, GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996.

Electrical Properties of Ferroelectric BaMgF4 Films on Si Substrates

H. Ishiwara, K. Aizawa, 1994 .

Epitaxial growth of BaMgF4 films on Si(100) and (111) substrates: An approach to ferroelectric/semiconductor heterostructures

H. Ishiwara, M. Kumagai, Kouji Aizawa, 1993 .

Scanning Electron Beam Annealing of P-Ion-Implanted Si(100) and (111) Substrates

Kunihiro Suzuki, H. Ishiwara, 1984 .

Study of subboundary generation in silicon‐on‐insulator films recrystallized by a pseudoline electron beam

S. Horita, H. Ishiwara, K. Fukao, 1990 .

Characterization of silicon‐on‐insulator films recrystallized by an obliquely scanned pseudoline electron beam

S. Horita, H. Ishiwara, 1987 .

Capacitance-voltage and retention characteristics of Pt/SrBi2Ta2O9/HfO2/Si structures with various buffer layer thickness

Hiroshi Ishiwara, Yoshihiro Sugiyama, Y. C. Zhou, 2009 .

Fabrication of PbZrxTi1-xO3 Films on Si Structures Using Y2O3 Buffer Layers

H. Ishiwara, E. Tokumitsu, Byung-Eun Park, 1998 .

Five-day-long ferroelectric memory effect in Pt∕(Bi,La)4Ti3O12∕HfO2∕Si structures

H. Ishiwara, Byung-Eun Park, Kazuhiro Takahashi, 2004 .

Frequency-dependent electrical properties in Bi(Zn0.5Ti0.5)O3 doped Pb(Zr0.4Ti0.6)O3 thin film for ferroelectric memory application

H. Ishiwara, Y. Sugiyama, M. Tang, 2010 .

High-performance metal–ferroelectric–insulator–semiconductor structures with a damage-free and hydrogen-free silicon–nitride buffer layer

H. Ishiwara, Y. Fujisaki, T. Kijima, 2001 .

Doping Effect of Rare-Earth Ions on Electrical Properties of BiFeO3 Thin Films Fabricated by Chemical Solution Deposition

H. Ishiwara, S. Singh, 2006 .

Excellent Current Drivability and Environmental Stability in Room-Temperature-Fabricated Pentacene-Based Organic Field-Effect Transistors With ${\rm HfO}_{2}$ Gate Insulators

H. Ishiwara, M. Liao, S. Ohmi, 2014, IEEE Transactions on Electron Devices.

Room-Temperature Fabrication of HfON Gate Insulator for Low-Voltage-Operating Pentacene-Based Organic Field-Effect Transistors

H. Ishiwara, M. Liao, S. Ohmi, 2011 .

Profiles; How Well Can Experimental Results be Explained by Theories ?

H. Ishiwara, S. Furukawa, 1975 .

Growth and Device Applications of Epitaxial Insulators on Semiconductors

H. Ishiwara, 1992 .

Epitaxial Growth of Perovskite Type Oxide Films OH Si Substrates

H. Ishiwara, H. Mori, S. Ueno, 1991 .

Silicon/insulator heteroepitaxial structures formed by vacuum deposition of CaF2 and Si

H. Ishiwara, T. Asano, 1982 .

CHARACTERISTICS OF METAL-FERROELECTRIC-INSULATOR-SILICON DEVICES USING HFSION BUFFER LAYERS

H. Hoko, H. Ishiwara, K. Maruyama, 2008 .

Effect of an In-situ Process on Electrical Properties of n-Type Pentacene-Based Metal–Oxide–Semiconductor Diodes with Yb Donor Layer

H. Ishiwara, S. Ohmi, Young-Uk Song, 2012 .

Formation of LaAlO3 films on Si(100) substrates using molecular beam deposition

H. Ishiwara, Byung-Eun Park, 2003 .

Surgical treatment of Wolf-Parkinson-White syndrome, a report of three cases.

Y. Konishi, N. Tatsuta, H. Ishiwara, 1979, Nihon geka hokan. Archiv fur japanische Chirurgie.

Formation and Characterization of Epitaxial TiO2 and BaTiO3/TiO2 Films on Si Substrate

Masashi Kawasaki, Hideomi Koinuma, Hiroshi Ishiwara, 1995 .

Impurity substitution effects in BiFeO3 thin films—From a viewpoint of FeRAM applications

H. Ishiwara, 2012 .

Characteristics of Undoped and Mn-Doped BiFeO3 Films Formed on Pt and SrRuO3/Pt Electrodes by Radio-Frequency Sputtering

Jeong Hwan Kim, H. Funakubo, H. Ishiwara, 2009 .

Reduced leakage current in La and Ni codoped BiFeO3 thin films

H. Ishiwara, K. Maruyama, S. Singh, 2007 .

Room temperature ferroelectric properties of Mn-substituted BiFeO3 thin films deposited on Pt electrodes using chemical solution deposition

H. Ishiwara, K. Maruyama, S. Singh, 2006 .

Reduced Leakage Current in BiFeO3 Thin Films on Si Substrates Formed by a Chemical Solution Method

H. Ishiwara, S. Singh, 2005 .

Long Retention Performance of a MFIS Device Achieved by Introducing High-k Al 2 O 3 /Si 3 N 4 /Si Buffer Layer

H. Ishiwara, Y. Fujisaki, K. Iseki, 2003 .

Epitaxial growth of conductive strontium-vanadate films on Si(100) substrates and their electrical resistivities

H. Ishiwara, B. Moon, 1996 .

Impact of face-to-face annealing in preparation of sol-gel-derived SrBi2Ta2O9 thin films

H. Ishiwara, E. Tokumitsu, K. Aizawa, 2000 .

Consideration on the void generation mechanism in electron-beam recrystallized silicon-on-insulator films

S. Horita, H. Ishiwara, 1989 .

Thickness-dependent ferroelectric properties of Mn-doped BiFeO3 films formed on Pt and SrRuO3/Pt electrodes by RF Sputtering

Jeong Hwan Kim, H. Funakubo, H. Ishiwara, 2011 .

Electrical characteristics of Si MFIS-FETs using P(VDF-TrFE) thin films

H. Ishiwara, Sung‐Min Yoon, Joo-Won Yoon, 2011 .

Impact of Kr gas mixing in oxygen plasma etching of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer films

H. Ishiwara, S. Ohmi, Byung-Eun Park, 2008 .

Formation of Thick, Thermally-Stable High-Resistivity-Layers in GaAs by Oxygen Ion Implantation

H. Ishiwara, S. Furukawa, T. Asano, 1981 .

Resistivity control of sputtered amorphous-silicon by ion-implantation

H. Ishiwara, S. Furukawa, H. Matsumura, 1980 .

Fabrication of MFIS diodes using sol-gel derived SBT films and LaAlO3 buffer layers

H. Ishiwara, Byung-Eun Park, 2001 .

BOTTOM ELECTRODES DEPENDENCE OF FERROELECTRIC PROPERTIES IN EPITAXIAL BiFeO3/SrRuO3/SrTiO3 STRUCTURES

H. Funakubo, H. Ishiwara, S. Singh, 2007 .

Epitaxial BiFeO3 thin films fabricated by chemical solution deposition

H. Funakubo, H. Ishiwara, S. Singh, 2006 .

Ferroelectric Properties of BaZrO3 Doped Sr0.8Bi2.2Ta2O9 Thin Films

J. Cross, H. Ishiwara, K. Shinozaki, 2009 .

Ferroelectric and Electrical Properties of BaZrO3 Doped Sr0.8Bi2.2Ta2O9 Thin Films

J. Cross, H. Ishiwara, K. Shinozaki, 2008 .

Optimum Ferroelectric Film Thickness in Metal–Ferroelectric–Insulator–Semiconductor Structures Composed of Pt, (Bi,La)4Ti3O12, HfO2, and Si

H. Ishiwara, Kazuhiro Takahashi, K. Aizawa, 2006 .

Memory operations of 1T2C-type ferroelectric memory cell with excellent data retention characteristics

H. Ishiwara, Sung‐Min Yoon, 2001 .

New Line of Solid Solution System of Oxide Ferroelectrics

H. Ishiwara, T. Kijima, 2002 .

Optimization of the Growth Conditions of Heteroepitaxial GaAs Films on CaF2/Si Structures

Hee-Chul Lee, H. Ishiwara, S. Furukawa, 1986 .

Enhanced polarization and reduced leakage current in BiFeO3 thin films fabricated by chemical solution deposition

H. Ishiwara, K. Maruyama, S. Singh, 2006 .

Current Status of Fabrication and Integration of Ferroelectric-Gate Fet's

H. Ishiwara, 1999 .

Bi2SiO5 Doping Concentration Effects on the Electrical Properties of SrBi2Ta2O9 Films

H. Ishiwara, Xubing Lu, Xingsen Gao, 2014, Journal of Electronic Materials.

Site engineering in chemical-solution-deposited Bi3.25La0.75Ti3O12 thin films using Ce, Zr, Mn and Si atoms

S. Singh, H. Ishiwara, 2007 .

DEFECT ENGINEERING FOR CONTROL OF POLARIZATION FATIGUE IN Bi3.25La0.75Ti3O12 THIN FILM CAPACITORS

S. Singh, H. Ishiwara, S. Singh, 2006 .

Electrical properties of Pt/Bi_3.25La_0.75Ti_3O_12/Pt thin film capacitors tailored by cerium doping

S. Singh, H. Ishiwara, 2006 .

Properties of ferroelectric SrBi2Ta2O9–Bi4Ti3O12 thin films derived by the sol–gel method

H. Ishiwara, Xusheng Wang, 2005 .

Characterization of Si- and Mo-codoped Bi3.35La0.75Ti3O12 Ferroelectric Thin Films

H. Ishiwara, H. Ohki, Y. Fujisaki, 2005 .

Improvement of Ferroelectric Properties in Mo-Substituted Bi3.35La0.75Ti3O12 Films by Optimization of Heating Rate

H. Ishiwara, Xusheng Wang, H. Ohki, 2005 .

Ferroelectric characteristics of silicate-bound Bi4Ti3O12 thin films

Kiyotaka Tanaka, D. Fu, K. Nishizawa, 2005 .

Enhanced Electrical properties in Mn-doped Bi3.25La0.75Ti3O12 thin films

H. Ishiwara, S. Singh, 2005 .

Preparation of Si-Added SrBi2Ta2O9 Ferroelectric Thin Films by RF Magnetron Sputtering at High Temperature

H. Ishiwara, S. Kikuchi, 2004 .

Ferroelectric Thin Film Depositions for Various Types of FeRAMs (Ferroelectric Random Access Memories)

H. Ishiwara, Y. Fujisaki, 2004 .

Effects of SiO2-Based Additives on Bi-Based Layer-Structured Ferroelectrics

H. Ishiwara, K. Kato, 2003 .

Polarization enhancement and coercive field reduction in W- and Mo-doped Bi3.35La0.75Ti3O12 thin films

H. Ishiwara, Xusheng Wang, 2003 .

Significant Enhancement of Bi3.45La0.75Ti3O12 Ferroelectricity Derived by Sol-Gel Method

H. Ishiwara, Y. Fujisaki, K. Iseki, 2003 .

Fabrication and Characterization of (Bi,La)4Ti3O12 Films Using LaAlO3 Buffer Layers for MFIS Structures

H. Ishiwara, Byung-Eun Park, 2004 .

Epitaxial Growth of Ferroelectric YMnO3 Thin Films on Si (111) Substrates by Molecular Beam Epitaxy

H. Ishiwara, E. Tokumitsu, Shogo Imada, 1998 .

MBE Growth of Ferroelectric YMnO 3 Thin Films on Si(111) Using Y 2 O 3 Buffer Layers

H. Ishiwara, E. Tokumitsu, Shogo Imada, 1998 .

Ferroelectric Properties of Cr-Doped BiFeO3 Films Crystallized below 500 °C

Z. Zhong, H. Ishiwara, Y. Sugiyama, 2009 .

FREQUENCY-DEPENDENT POLARIZATION IN BiFeO3 THIN FILMS

S. Singh, H. Ishiwara, K. Maruyama, 2008 .

Micro-structure and ferroelectric properties of BiFeO3 thin films formed on Pt-coated r-plane sapphire substrates

S. Singh, H. Ishiwara, 2006 .

An electrically modifiable synapse array composed of metal-ferroelectric-semiconductor (MFS) FET's using SrBi/sub 2/Ta/sub 2/O/sub 9/ thin films

H. Ishiwara, E. Tokumitsu, Sung-Min Yoon, 1999, IEEE Electron Device Letters.

Characteristics of ferroelectric Pb(Zr,Ti)O3 films epitaxially grown on CeO2(111)/Si(111) substrates

M. Yoshimoto, H. Ishiwara, E. Tokumitsu, 2001 .

Ferroelectricity of YMnO3 Thin Films on Pt(111)/Al2O3(0001) and Pt(111)/Y2O3(111)/Si(111) Structures Grown by Molecular Beam Epitaxy

H. Ishiwara, E. Tokumitsu, Shogo Imada, 2001 .

Characterization of Metal-Ferroelectric-(Metal-)Insulator-Semiconductor (MF(M)IS) Structures Using (Pb, La)(Zr, Ti)O3 and Y2O3 Films

H. Ishiwara, E. Tokumitsu, D. Takahashi, 2000 .

Current status of FET-type ferroelectric memories

H. Ishiwara, 2000, ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on Applications of Ferroelectrics (IEEE Cat. No.00CH37076).

Current status of FET-type ferroelectric memories

H. Ishiwara, 2000, 2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400).

Fabrication and characterization of mfsfet arrays using Al/BaMgF4/Si(111) structures

H. Ishiwara, K. Aizawa, 1999 .

Electrical Characteristics of Neuron Oscillation Circuits Composed of MOSFETs and Complementary Unijunction Transistors

H. Ishiwara, Sung‐Min Yoon, E. Tokumitsu, 1998 .

Preparation and Characterization of Bi 2 VO 5.5 Films by MOD Method

H. Ishiwara, E. Tokumitsu, Yohei Takahashi, 1998 .

Current status and prospects of mfsfets and related devices

H. Ishiwara, 1997 .

Electrical properties of ferroelectric-capacitor-gate si mos transistors using p(l)zt films

H. Ishiwara, E. Tokumitsu, T. Shimamura, 1997 .

Preparation and characterization of PZT thin films on CeO2(111)/Si(111) structures

H. Ishiwara, I. Sakai, Eisuke Tokumitu, 1996 .

Fabrication of MFIS-FETs using PLZT/STO/Si(100) structures

H. Ishiwara, E. Tokumitsu, R. Nakamura, 1996, ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics.

Characterization of Pb(ZrxTi1−x)O3 films prepared by vacuum evaporation method

H. Ishiwara, E. Tokumitsu, S. Ueno, 1995 .

Study on gradual reversal of polarization in ferroelectric PZT thin films for adaptive-learning MFSFET applications

H. Ishiwara, E. Tokumitsu, Kensuke Itani, 1995 .

Adaptive-learning neuron circuits using ferroelectric thin films

K. Kim, H. Ishiwara, 1994 .

Crystal orientations of orthorhombic BaMgF4 films grown on Si substrates

H. Ishiwara, K. Aizawa, 1994 .

Preparation of PbZr x Ti 1−x O 3 Films on Si Substrates Using SrTiO 3 Buffer Layers

H. Ishiwara, E. Tokumitsu, B. Moon, 1994 .

Formation of BaMgF 4 Films on Pt/MgO, Si and GaAs Substrates

H. Ishiwara, Kouji Aizawa, T. Ichiki, 1993 .

Ferroelectric neuron integrated circuits using SrBi/sub 2/Ta/sub 2/O/sub 9/-gate FET's and CMOS Schmitt-trigger oscillators

H. Ishiwara, E. Tokumitsu, H. Ishiwara, 2000 .

REALIZATION OF ADAPTIVE LEARNING FUNCTION IN A NEURON CIRCUIT USING METAL/FERROELECTRIC (SRBI2TA2O9)/SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MFSFET)

Sung-Min Yoon, Hiroshi Ishiwara, Eisuke Tokumitsu, 1999 .

Proposal of Adaptive-Learning Neuron Circuits with High Density Synapse Array of Ferroelectric Thin Films

H. Ishiwara, 1993 .

Adaptive-Learning Synaptic Devices Using Ferroelectric-Gate Field-Effect Transistors for Neuromorphic Applications

Sung-Min Yoon, Hiroshi Ishiwara, H. Ishiwara, 2020, Topics in Applied Physics.

Improvement of Data Readout Disturbance Effect in 1T2C-Type Ferroelectric Memory

H. Ishiwara, Shuu'ichirou Yamamoto, Hyun-Soo Kim, 2004 .

Al2O3/Si3N4 stacked insulators for 0.1 μm gate metal–oxide–semiconductor transistors realized by high-density Si3N4 buffer layers

H. Ishiwara, Y. Fujisaki, M. Mao, 2003 .

Long Time Data Retention and A Mechanism in Ferroelectric-Gate Field Effect Transistors with HfO2 Buffer Layer

H. Ishiwara, K. Aizawa, Y. Kawashima, 2004 .

CHARACTERIZATION OF (Bi,Nd)4Ti3O12/HfO2/p-TYPE Si STRUCTURES FOR MFIS-FeRAM APPLICATION

Y. Arimoto, H. Hoko, H. Ishiwara, 2006 .

Formation of Ferroelectric (Bi, Nd)4Ti3O12 Thin Films on HfO2/Si(100) Structures for MFIS-type Ferroelectric Memory Applications

Y. Arimoto, H. Ishiwara, Yoshiaki Tabuchi, 2004 .

Modeling of dynamic response of ferroelectric capacitors

Y. Arimoto, H. Ishiwara, T. Tamura, 2001 .

Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films

H. Ishiwara, 1998 .

Data Retention Characteristics of Metal–Ferroelectric-Metal–Insulator–Semiconductor Diodes with SrBi2Ta2O9 Ferroelectrics and Al2O3 Buffer Layers

H. Ishiwara, Seung-Kuk Kang, 2002 .

The influence of La-substitution on the micro-structure and ferroelectric properties of chemical-solution-deposited BiFeO3 thin films

S. Singh, H. Ishiwara, K. Maruyama, 2007 .

Variation of leakage current mechanisms by ion substitution in BiFeO3 thin films

Z. Zhong, H. Ishiwara, 2009 .

Effects of Ni Substitution on Structural, Dielectrical, and Ferroelectric Properties of Chemical-Solution-Deposited Multiferroic BiFeO3 Films

S. Singh, R. Palai, H. Ishiwara, 2008 .

STRUCTURAL AND ELECTRICAL PROPERTIES OF BiFeO3 THIN FILMS

H. Uchida, H. Ishiwara, S. Singh, 2005 .

Electrical Properties of Gallium Fluoride(GaF3)/GaAs Interface with and without Sulfur Treatment

K. Kim, H. Ishiwara, Kouji Aizawa, 1990 .

Preparation of PbZrxTi1 − xO3/La1 − xSrxCoO3 heterostructures using the sol-gel method and their electrical properties

H. Ishiwara, Sung‐Min Yoon, E. Tokumitsu, 1997 .

Comparative Studies on Ferroelectric Properties of Mn-Substituted BiFeO3 Thin Films Deposited on Ir and Pt Electrodes

Zhiyong Zhong, Hiroshi Ishiwara, Kenji Maruyama, 2008 .

Formation and electrical properties of heteroepitaxial SrTiO3/SrVO3−x/Si(100) structures

H. Ishiwara, B. Moon, 1995 .

Ion-beam-induced epitaxy in the Pd/Si system

H. Ishiwara, N. Kuzuta, 1980 .

Double heteroepitaxy in the Si (111)/CoSi2/Si structure

H. Ishiwara, S. Furukawa, Shyuichi Saitoh, 1980 .

Channeling and backscattering studies of the crystalline perfection and the thermal stability of epitaxial PtSi films on Si

K. Hikosaka, H. Ishiwara, S. Furukawa, 1979 .

Characterization of epitaxial metal silicide films grown on silicon

K. Hikosaka, H. Ishiwara, S. Furukawa, 1979 .

(Invited) Epitaxial Silicide Films for Integrated Circuits and Future Devices

H. Ishiwara, S. Furukawa, 1982 .

Single Crystalline Silicide Formation

H. Ishiwara, S. Furukawa, T. Asano, 1981 .

Channeled ion implantation through metallic films

K. Hikosaka, H. Ishiwara, S. Furukawa, 1979 .

Epitaxial relations in group‐IIa fluoride/Si(111) heterostructures

Tanemasa Asano, Hiroshi Ishiwara, H. Ishiwara, 1983 .

Theoretical Considerations on Ion Channeling Effect through Silicide-Silicon Interface

Hiroshi Ishiwara, Kohki Hikosaka, K. Hikosaka, 1981 .

Epitaxial growth of Pd2Si films on Si(111) substrates by scanning electron‐beam annealing

H. Ishiwara, H. Yamamoto, 1982 .

An epitaxial Si/insulator/Si structure prepared by vacuum deposition of CaF2 and silicon☆

Hiroshi Ishiwara, H. Ishiwara, T. Asana, 1982 .

Epitaxial Silicide Formation by Scanning Electron Beam Annealing

H. Ishiwara, H. Yamamoto, 1981 .

An Epitaxial Si/insulator/Si Structure Prepared by Vacuum Deposition of CaF 2 and Silicon

H. Ishiwara, T. Asano, 1981 .

Laser Annealing of the Double-Hetero Si(lll)/CoSi 2 /Si Structure

H. Ishiwara, S. Furukawa, S. Saitoh, 1980 .

Growth mechanisms and thermal stability of ion-beam-induced epitaxial Pd2Si films

H. Ishiwara, 1982 .

Channeling studies of radiation damage in metal‐silicides

K. Hikosaka, H. Ishiwara, S. Furukawa, 1978 .

Preparation of Bi3.25+xLa0.75Ti3O12+y Films on Ruthenium Electrodes

H. Ishiwara, Takehiko Sato, K. Sugahara, 2002 .

Ferroelectric-Gate Field Effect Transistor Memories

M. Okuyama, H. Ishiwara, S. Sakai, 2020, Topics in Applied Physics.

Formation of Highly-Doped Thin Layers by Using Knock-on Effect

H. Ishiwara, S. Furukawa, 1977 .

A structure modeling of metal-silicide layers by using axial and planar channeling techniques

H. Ishiwara, S. Furukawa, M. Nagatomo, 1978 .

Separate estimate of crystalline orientations and scattering centers in polycrystals by backscattering technique

H. Ishiwara, S. Furukawa, 1976 .

Formation of a Double-Hetero Si/CoSi2/Si Structure Using Molecular Beam and Solid Phase Epitaxies

H. Ishiwara, S. Furukawa, S. Saitoh, 1980 .

Low temperature annealing of B and P ions incorporated into deposited- and self-implanted amorphous Si

K. Naruke, H. Ishiwara, S. Furukawa, 1983 .

Annealing behavior of radiation damages in metal-silicides

K. Hikosaka, H. Ishiwara, S. Furukawa, 1980 .

On the Mechanisms of Lateral Solid Phase Epitaxial Growth of Amorphous Si Films Evaporated on SiO2 Patterns

H. Ishiwara, S. Furukawa, H. Yamamoto, 1985 .

Characterization of Solid-Phase Epitaxially-Grown Silicon Films on SiO2

H. Ishiwara, S. Furukawa, T. Tokuyama, 1984 .

Lateral solid phase epitaxy of amorphous Si films on Si substrates with SiO2 patterns

H. Ishiwara, S. Furukawa, T. Tokuyama, 1983 .

Growth Conditions of Deposited Si Films in Solid Phase Epitaxy

T. Sugii, H. Ishiwara, S. Furukawa, 1981 .

Study on Formation of Solid-Phase-Epitaxial CoSi2, Films and Patterning Effects

H. Ishiwara, S. Furukawa, K. Ishibashi, 1983 .

Mass Dependence of Critical Amorphizing Dose in Ion Implantation

H. Ishiwara, S. Furukawa, 1972 .

A Novel Electron-Beam Exposure Epitaxy for Growing GaAs Films on Fluoride/Si Structures

Hee-Chul Lee, H. Ishiwara, S. Furukawa, 1987 .

Electrical properties of LaAlO3/Si and Sr0.8Bi2.2Ta2O9/LaAlO3/Si structures

Byung-Eun Park, Hiroshi Ishiwara, H. Ishiwara, 2001 .

Preparation of Yb-Ba-Cu-O Superconducting Films Using an Arc Discharge Evaporation Method

H. Nohira, H. Ishiwara, 1989 .

Epitaxial Growth of Ba 1−x Sr,TiO 3 Films on Si by Pulsed Laser Deposition and Their Dielectric Properties

H. Koinuma, M. Yoshimoto, M. Kawasaki, 1994 .

Flattening the Surface of CaF2/Si(100) Structures by Post-Growth Annealing

H. Ishiwara, S. Furukawa, T. Asano, 1988 .

Ultrathin Poly(4-vinylphenol) Interfacial Layer Evaporation for Low-Voltage Operation of Organic Field-Effect Transistors with HfO2 Gate Insulator

H. Ishiwara, S. Ohmi, Kousuke Kamino, 2013 .

Heteroepitaxy on silicon

H. Choi, R. Nemanich, H. Ishiwara, 1988 .

MESFET's on a GaAs-on-insulator structure

H. Ishiwara, S. Furukawa, K. Tsutsui, 1987, IEEE Electron Device Letters.

Back-scattering study of heavy-ion distribution in semiconductors☆

H. Ishiwara, S. Furukawa, H. Matsumura, 1973 .

Surgical treatment of common atrium associated with asplenia, with special reference to the abnormal conduction system.

Y. Konishi, N. Tatsuta, H. Ishiwara, 1979, Nihon geka hokan. Archiv fur japanische Chirurgie.

Dependence of Ferroelectric Properties on Thickness of BiFeO3 Thin Films Fabricated by Chemical Solution Deposition

H. Funakubo, H. Uchida, H. Ishiwara, 2005 .

Crystal structure and ferroelectric properties of (Bi,La)4(Ti,Si)3O12 as a bulk ferroelectric material

Y. Idemoto, N. Koura, H. Ishiwara, 2003 .

Epitaxial growth of Si films on CaF2/Si structures with thin Si layers predeposited at room temperature

H. Ishiwara, T. Asano, 1984 .

Microstructure and frequency dependent electrical properties of Mn-substituted BiFeO3 thin films

Hiroshi Ishiwara, Sushil Kumar Singh, Keisuke Sato, 2007 .

Croconic Acid Thin Film Formation for Ferroelectric Gate OFETs

H. Ishiwara, S. Ohmi, K. Takayama, 2013 .

Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors

Shun'ichiro Ohmi, Hiroshi Ishiwara, Min Liao, 2012, IEICE Trans. Electron..

Fully Room-Temperature-Fabricated Low-Voltage Operating Pentacene-Based Organic Field-Effect Transistors With HfON Gate Insulator

H. Ishiwara, M. Liao, S. Ohmi, 2011, IEEE Electron Device Letters.

Investigation of n-Type Pentacene Based MOS Diodes with Ultra-Thin Metal Interface Layer

Shun'ichiro Ohmi, Hiroshi Ishiwara, Young-Uk Song, 2010, IEICE Trans. Electron..

Performance improvement of pentacene based organic field-effect transistor with HfON gate insulator

Shun'ichiro Ohmi, Hiroshi Ishiwara, Min Liao, 2011, IEICE Electron. Express.

Heteroepitaxial Growth of Group-IIa-Fluoride Films on Si Substrates

Tanemasa Asano, Hiroshi Ishiwara, Noriyuki Kaifu, 1983 .

Improved fatigue endurance in Mn-doped Bi3.25La0.75Ti3O12 thin films

S. Singh, H. Ishiwara, 2006 .

Effect of High-Pressure Oxygen Annealing on Bi2SiO5-Added Ferroelectric Thin Films

Y. Idemoto, H. Ishiwara, T. Kijima, 2002 .

Boron Doping Effects in Lateral Solid Phase Epitaxy of Amorphous Si Films

H. Ishiwara, S. Furukawa, H. Yamamoto, 1985 .

"111…-textured Mn-substituted BiFeO 3 thin films on SrRuO 3 /Pt/Ti/SiO 2 /Si structures

H. Funakubo, H. Ishiwara, K. Maruyama, 2007 .

Improved ferroelectric property of very thin Mn-doped BiFeO3 films by an inlaid Al2O3 tunnel switch

Jeong Hwan Kim, C. Hwang, H. Funakubo, 2011 .

Electrical Properties of MFS-FETs using SrBi2 Ta2O9 Films Directly Grown on Si Substrates by Sol-Gel Method

H. Ishiwara, E. Tokumitsu, Gen Fujii, 1997 .

Comparison of Ferroelectric and Insulating Properties of Mn-Doped BiFeO3 Films Formed on Pt, SrRuO3/Pt, and LaNiO3/Pt Bottom Electrodes by Radio-Frequency Sputtering

Jeong Hwan Kim, H. Funakubo, H. Ishiwara, 2011 .

High Fatigue Endurance and Large Remanent Polarization in Pt/SrRuO3/BiFe0.95Mn0.05O3/SrRuO3/Pt Ferroelectric Capacitors Formed on SiO2-Coated Si Substrates

Jeong Hwan Kim, H. Funakubo, H. Ishiwara, 2011 .

Thickness Dependences of Polarization Characteristics in Mn-Substituted BiFeO3 Films on Pt Electrodes

Z. Zhong, H. Ishiwara, Y. Sugiyama, 2008 .

Cr-Doping Effects to Electrical Properties of BiFeO3 Thin Films Formed by Chemical Solution Deposition

Keisuke Sato, H. Ishiwara, K. Maruyama, 2006 .

Improved multiferroic properties in Sm-doped BiFeO3 thin films deposited using chemical solution deposition method

M. Itoh, H. Ishiwara, S. Singh, 2012 .

Proposal of a Single-Transistor-Cell-Type Ferroelectric Memory Using an SOI Structure and Experimental Study on the Interference Problem in the Write Operation

Toshishige Shimamura, Hiroshi Ishiwara, Eisuke Tokumitsu, 1997 .

Intrinsic Characteristics of Bi(Zn1/2Ti1/2)O3 - substituted Pb(Zr0.4Ti0.6)O3 Thin Films

Yoshitaka Ehara, H. Ishiwara, M. Chentir, 2011 .

Characterization of La2 O 3 and Yb2 O 3 Thin Films for High-k Gate Insulator Application

H. Iwai, H. Ishiwara, S. Ohmi, 2003 .

Fabrication of MOSFETs in Si/CaF2/Si heteroepitaxial structures

H. Ishiwara, T. Asano, Y. Kuriyama, 1985 .

Epitaxial Relations in Lattice-Matched (Ca, Sr)F2 Films Grown on GaAs{111} and Ge(111) Substrates

H. Ishiwara, S. Furukawa, K. Tsutsui, 1984 .

Heteroepitaxial Growth of GaAs Films on CaF2/Si(511) Structures Prepared with Rapid Thermal Annealing

H. Ishiwara, S. Furukawa, T. Asano, 1989 .

Formation of Ferroelectric BaMgF4 Films on GaAs Substrates

Hiroshi Ishiwara, H. Ishiwara, Kouji Aizawa, 1992 .

Improvement of interface electronic properties of GaF3/GaAs MIS structures

H. Ishiwara, Kouji Aizawa, H. Ricard, 1992 .

Improvement of the Interface Properties of Fluoride/GaAs(100) Structures by Postgrowth Annealing

K. Kim, H. Ishiwara, S. Furukawa, 1988 .

Epitaxial relations in CaxSr1−xF2 films grown on GaAs {111} and Ge(111) substrates

H. Ishiwara, S. Furukawa, K. Tsutsui, 1985 .

Growth of crystalline SrTiO3 films on Si substrates using thin fluoride buffer layers and their electrical properties

H. Ishiwara, B. Moon, 1994 .

Electron-Beam Exposure(EBE) and Epitaxy of GaAs Films on CaF2/Si Structures

Hee-Chul Lee, H. Ishiwara, S. Furukawa, 1988 .

Ferroelectric random access memories.

Hiroshi Ishiwara, H. Ishiwara, 2012, Journal of nanoscience and nanotechnology.

Preparation of PbTiO3 films utilizing self-control mechanism of stoichiometric composition in dual-beam vacuum evaporation method

H. Ishiwara, S. Ueno, 1992 .

Low Voltage Operation of Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-Field-Effect-Transistors (FETs) Using Pt/SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si Structures

Hiroshi Ishiwara, Eisuke Tokumitsu, H. Ishiwara, 2001 .

Damage-Free and Hydrogen-Free Nitridation of Silicon Substrate by Nitrogen Radical Source

H. Ishiwara, Y. Fujisaki, 2000 .

Epitaxial growth of elemental semiconductor films onto silicide/Si and fluoride/Si structures

H. Ishiwara, S. Furukawa, T. Asano, 1983 .

Recrystallization of Silicon-on-Insulator Structures by Sinusoidally-Scanned Electron Beams

K. Ohyu, S. Horita, H. Ishiwara, 1985 .

Ferroelectric properties enhancement in niobium-substituted Bi3.25La0.75Ti3O12 thin films prepared by chemical solution route

S. Singh, H. Ishiwara, 2006 .

Projected Range Distribution of Implanted Ions in a Double-Layer Substrate

S. Furukawa, H. Ishiwara, J. Yamada, 1975 .

Fabrication and Characterization of Pt/(Bi, La)4Ti3O12/Si3N4/Si Metal Ferroelectric Insulator Semiconductor Structure for FET-Type Ferroelectric Memory Applications

H. Ishiwara, Y. Fujisaki, T. Kijima, 2001 .

Leakage current characteristics of Pt∕Bi4−xLaxTi3O12∕Ru ferroelectric capacitors fabricated on metal-organic chemical vapor deposited Ru films

H. Ishiwara, Takehiko Sato, Y. Fujisaki, 2006 .

Fabrication and characterization of metal-ferroelectric-insulator-Si diodes and transistors with different HfSiON buffer layer thickness

H. Ishiwara, Xubing Lu, K. Maruyama, 2008 .

Positron Annihilation Study on Defects in HfSiON Films Deposited by Electron-Beam Evaporation

A. Uedono, H. Ishiwara, G. Yuan, 2009 .

Chapter 3 – Status of Metal-Ferroelectric- Semiconductor Field Effect Transistors (MFSFETs) and Related Devices

H. Ishiwara, 2000 .

Low-voltage operation and excellent data retention characteristics of metal-ferroelectric-insulator-Si devices based on organic ferroelectric films

H. Ishiwara, Xubing Lu, Joo-Won Yoon, 2009 .

Electrical properties and x-ray photoelectron spectroscopy studies of Bi(Zn0.5Ti0.5)O3 doped Pb(Zr0.4Ti0.6)O3 thin films

H. Funakubo, H. Ishiwara, Y. Sugiyama, 2010 .

Lateral solid phase epitaxy of amorphous Si films by selective surface doping method of P atoms

H. Ishiwara, S. Furukawa, T. Dan, 1988 .

Lateral solid phase epitaxy in selectively P‐doped amorphous Si films

Makoto Tanaka, H. Ishiwara, S. Furukawa, 1986 .

Lateral solid phase epitaxy of amorphous Si films onto nonplanar SiO2 patterns on Si substrates

H. Ishiwara, S. Furukawa, A. Tamba, 1986 .

Nonvolatile Memory Thin Film Transistors Using Spin-Coated Amorphous Zinc Indium Oxide Channel and Ferroelectric Copolymer

C. Hwang, H. Ishiwara, C. Byun, 2010 .

Impact of HfO2 buffer layers on data retention characteristics of ferroelectric-gate field-effect transistors

Byung-Eun Park, Hiroshi Ishiwara, Koji Aizawa, 2004 .

Nonvolatile memory operations of metal-ferroelectric-insulator-semiconductor (MFIS) FETs using PLZT/STO/Si(100) structures

H. Ishiwara, E. Tokumitsu, H. Ishiwara, 1997, IEEE Electron Device Letters.

FeFET and ferroelectric random access memories

H. Ishiwara, 2012 .

Current status and prospects of FET-type ferroelectric memories

H. Ishiwara, H. Ishiwara, 1999, 1999 57th Annual Device Research Conference Digest (Cat. No.99TH8393).

Lattice-Matched Epitaxial Growth of Semiconductor Films onto Insulator (Mixed Fluoride)/Si Structures

H. Ishiwara, T. Asano, 1983 .

Si-Substituted Ultrathin Ferroelectric Films

H. Ishiwara, T. Kijima, 2002 .

Fabrication and Characterization of Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS) Structures Using Ferroelectric (Bi, La)4Ti3O12 Films

H. Ishiwara, E. Tokumitsu, T. Kijima, 2001 .

Characterization of ferroelectric BaMgF4 films grown on AlGaAs/GaAs(100) high-electron-mobility transistor structures

H. Ishiwara, E. Tokumitsu, S. Ohmi, 1995 .

30-day-long Data Retention in Ferroelectric-gate FETs with HfO2 Buffer Layers

H. Ishiwara, Byung-Eun Park, Kazuhiro Takahashi, 2004 .

Electrical Properties of Metal-Ferroelectric-Insulator-Semiconductor (MFIS)- and Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-FETs Using Ferroelectric SrBi2Ta2O9 Film and SrTa2O6/SiON Buffer Layer

H. Ishiwara, E. Tokumitsu, Gen Fujii, 2000 .

Approximate Analysis of Cylindrical Ferroelectric Capacitor and Derivation of Drain Current Characteristics in Ferroelectric Gate-All-Around Carbon Nanotube Transistor

H. Ishiwara, Masakazu Ibata, 2011 .

Low-Voltage Operation of Ferroelectric Gate Thin Film Transistors Using Indium Gallium Zinc Oxide-Channel and Ferroelectric Polymer Poly(vinylidene fluoride–trifluoroethylene)

H. Ishiwara, Y. Fujisaki, E. Tokumitsu, 2011 .

The flexible non-volatile memory devices using oxide semiconductors and ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene)

H. Ishiwara, Y. Fujisaki, Sung‐Min Yoon, 2011 .

Solution-Processed Zinc Indium Oxide Transparent Nonvolatile Memory Thin-Film Transistors with Polymeric Ferroelectric Gate Insulator

C. Hwang, H. Ishiwara, C. Byun, 2010 .

[Jaundice, vomiting and abdominal pain (nephrotic syndrome): intussusception (with lipoid nephrosis)].

T. Takano, H. Ishiwara, M. Nakagawa, 1975, Nihon rinsho. Japanese journal of clinical medicine.

Electrical and memory window properties of Sr0.8-xBaxBi2.2Ta2-yZryO9 ferroelectric gate in metal-ferroelectric-insulator-semiconductor structure

J. Cross, H. Ishiwara, K. Shinozaki, 2012, Journal of Electroceramics.

Characteristics of metal-ferroelectric-insulator-semiconductor structure using Sr0.8Bi2.2Ta2O9 and Sr0.8Bi2.2Ta2O9-BaZrO3 for ferroelectric gates

J. Cross, H. Ishiwara, K. Shinozaki, 2010 .

Effect of Ba and Zr doping in Sr0.8Bi2.2Ta2O9 thin films

J. Cross, H. Ishiwara, K. Shinozaki, 2009 .

Metal–ferroelectric–insulator–Si devices using HfTaO buffer layers

Xubing Lu, Hiroshi Ishiwara, Kenji Maruyama, 2008 .

Characterization of HfTaO films for gate oxide and metal-ferroelectric-insulator-silicon device applications

H. Ishiwara, Xubing Lu, K. Maruyama, 2008 .

Thirty-Day-Long Data Retention in Ferroelectric-Gate Field-Effect Transistors with HfO2 Buffer Layers

H. Ishiwara, Byung-Eun Park, Kazuhiro Takahashi, 2005 .

Formation of Shallow p+n Junctions by B-Ion Implantation in Si substrates with Amorphous Layers

S. Horita, H. Ishiwara, 1985 .

Heteroepitaxy Of Semiconductor/Fluoride/Si Structures

H. Ishiwara, S. Furukawa, T. Asano, 1989 .

Fabrication and electrical properties of Pt/(Bi, La)4Ti3O12/HfO2/Si structures

H. Ishiwara, Byung-Eun Park, Kazuhiro Takahashi, 2005 .

Investigation of the CaF2/p-type Si(100) interface by conductance and deep level transient spectroscopy

H. Ishiwara, A. Barrière, G. Couturier, 1991 .

Low-voltage operation of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer capacitors and metal-ferroelectric-insulator-semiconductor diodes

H. Ishiwara, Y. Fujisaki, S. Fujisaki, 2007 .

Excellent ferroelectricity of thin poly(vinylidene fluoride-trifluoroethylene) copolymer films and low voltage operation of capacitors and diodes

H. Ishiwara, Y. Fujisaki, S. Fujisaki, 2007, IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control.

Excellent Ferroelectricity of Thin Poly(Vinylidene Fluoride-Trifluoroetylene) Copolymer Films and Low Voltage Operation of Capacitors and Diodes

H. Ishiwara, Y. Fujisaki, S. Fujisaki, 2007, 2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics.

Improvement of Crystallinity in Sol-Gel Derived (Bi,La)4Ti3O12 Films by Optimizing Dry-Gel Structures

H. Ishiwara, Y. Fujisaki, K. Iseki, 2003 .

Advanced MFIS Structure with Al 2 O 3 /Si 3 N 4 Stacked Buffer Layer

H. Ishiwara, Y. Fujisaki, S. Ogasawara, 2003 .

Open air plasma chemical vapor deposition of highly dielectric amorphous TiO2 films

H. Koinuma, M. Yoshimoto, H. Ishiwara, 1996 .

Electrical Characteristics for Lu2O3 Thin Films Fabricated by E-Beam Deposition Method

H. Iwai, H. Ishiwara, M. Takeda, 2004 .

Characteristics of LaAlO3 as Insulating Buffer Layers of Ferroelectric-Gate Field Effect Transistors

H. Ishiwara, Seung-Kuk Kang, 2002 .

Structure and electric properties of TiO2 films prepared by cold plasma torch under atmospheric pressure

H. Koinuma, T. Horiuchi, H. Ishiwara, 1996 .

Reduced leakage current in BiFeO3–BiCrO3 nanocomposite films formed by chemical solution deposition

H. Ishiwara, S. Singh, S. Shanthy, 2010 .

Nonvolatile memory transistors using solution-processed zinc-tin oxide and ferroelectric poly(vinylidene fluoride-trifluoroethylene)

C. Hwang, H. Ishiwara, C. Byun, 2010 .

Orientation Dependence of Lateral Solid-Phase-Epitaxial Growth in Amorphous Si Films

H. Ishiwara, S. Furukawa, H. Yamamoto, 1986 .

‥Recent Progress in Ferroelectic-gate FETs

H. Ishiwara, Byung-Eun Park, 2002 .

Improvement of Memory Retention Characteristics in Ferroelectric Neuron Circuits Using a Pt/SrBi2Ta2O9/Pt/Ti/SiO2/Si Structure-Field Effect Transistor as a Synapse Device.

Sung-Min Yoon, Hiroshi Ishiwara, Eisuke Tokumitsu, 2000 .

Influence of SiO2 cap layers on lateral solid-phase epitaxy of implanted amorphous Si films

H. Ishiwara, S. Furukawa, N. Tomita, 1989 .

Perforation seed structure in electron beam recrystallized silicon-on-insulator films

S. Horita, H. Ishiwara, 1987 .

Pseudoline electron beam recrystallization of silicon-on-insulator

S. Horita, H. Ishiwara, 1989 .

Formation of GaAs-on-Insulator Structures on Si Substrates by Heteroepitaxial Growth of CaF2 and GaAs

Hee-Chul Lee, H. Ishiwara, S. Furukawa, 1986 .

Growth of single domain GaAs/fluoride/Si structures

H. Ishiwara, S. Furukawa, K. Tsutsui, 1989 .

Growth and Characterization of Compositionally Graded (Ca, Sr)F2 Layers on Si(111) Substrates

H. Ishiwara, S. Furukawa, S. Kanemaru, 1987 .

Distribution of interfacial As atoms in the electron-beam exposure and epitaxy (EBE-epitaxy) technique for growing GaAs films on CaF2/Si(111) structures

Hee-Chul Lee, H. Ishiwara, S. Furukawa, 1990 .

Heteroepitaxial Growth of High Quality GaAs Films on Rapid-Thermal-anealing Processed CaF 2 /Si(511) Structures

H. Ishiwara, S. Furukawa, T. Asano, 1988 .

Layered Structures Composed of Si, Ge, GaAs, and Fluorides

Hee-Chul Lee, H. Ishiwara, S. Furukawa, 1987 .

Heteroepitaxial Si-, Ge-, and Gaas-On-Insulator Structures on Si Substrates by Use of Fluoride Insulators

H. Ishiwara, S. Furukawa, T. Asano, 1987 .

GaAs-on-Insulator Structure Prepared by Heteroepitaxy of Fluorides and GaAs

H. Ishiwara, S. Furukawa, K. Tsutsui, 1986 .

Control of Crystal Orientations in Lattice-Mismatched SrF2 and (Ca, Sr)F2 Films on Si Substrates by Intermediate CaF2 Films

H. Ishiwara, S. Furukawa, S. Kanemaru, 1985 .

Lattice matching at elevated substrate temperature for growth of GaAs films with good electrical properties on CaxSr1−xF2/GaAs(100) structures

H. Ishiwara, S. Furukawa, K. Tsutsui, 1986 .

A novel heteroepitaxy method of Ge films on CaF2 by electron beam exposure

H. Ishiwara, S. Furukawa, S. Kanemaru, 1988 .

Improvement of the quality of Ge films on CaF2/Si(111) structures by predeposited thin Ge layers

H. Ishiwara, S. Furukawa, S. Kanemaru, 1986 .

Control of the Initial Stage of Ge Overgrowth on CaF 2 /Si Structures by Electron Beam Exposure

H. Ishiwara, S. Furukawa, S. Kanemaru, 1987 .

Epitaxial Growth of Ge Films onto CaF2/Si Structures

H. Ishiwara, T. Asano, 1982 .

Radiation Damage in Epitaxial CaF2 Films on Si Substrates by Ar+ Ion Implantation

H. Ishiwara, T. Asano, Kouzo Orihara, 1983 .

Improvement of Crystalline Quality of Si Films on CaF2/Si Structures by Ion Implantation and Solid Phase Recrystallization

H. Ishiwara, S. Furukawa, T. Asano, 1983 .

Epitaxial Growth of Fluoride Films on Silicon Substrates

H. Ishiwara, T. Asano, 1983 .

Ion-irradiation-enhanced dissolution of epitaxial fluoride films: A new class of inorganic single-crystal ion resist

H. Ishiwara, S. Furukawa, T. Asano, 1989 .

New ferroelectric material for embedded FRAM LSIs

Masao Kondo, Hiroshi Ishiwara, Kenji Maruyama, 2007 .

Bending characteristics of ferroelectric poly(vinylidene fluoride trifluoroethylene) capacitors fabricated on flexible polyethylene naphthalate substrate

Sung-Min Yoon, Hiroshi Ishiwara, Shinhyuk Yang, 2011 .

Impact of interface controlling layer of Al2O3 for improving the retention behaviors of In-Ga-Zn oxide-based ferroelectric memory transistor

Sung-Min Yoon, Hiroshi Ishiwara, Chi-Sun Hwang, 2010 .

Preparation of self‐supporting Si thin single crystals by solid phase epitaxy and selective etching

H. Ishiwara, M. Fujii, 1984 .

An Electrically Modifiable Synapse Array Composed of Metal-Ferroelectric-Semiconductor (MFS) FET's Using SrBi Ta O Thin Films

Sung-Min Yoon, Hiroshi Ishiwara, Eisuke Tokumitsu, 1999 .