S. Furukawa

发表

Enhancement of lateral solid phase epitaxial growth in evaporated amorphous Si films by phosphorus implantation

Hiroshi M. Yamamoto, H. Ishiwara, S. Furukawa, 1985 .

Development of fast response bi-luminophore pressure-sensitive paint by means of an inkjet printing technique

Y. Egami, S. Furukawa, J. Ueyama, 2015 .

Theoretical Considerations on Lateral Spread of Implanted Ions

Hiroshi Ishiwara, Hideki Matsumura, Seijiro Furukawa, 1972 .

Backscattering study on lateral spread of implanted ions

S. Furukawa, H. Matsumura, 1973 .

Range Distribution Theory Based on Energy Distribution of Implanted Ions

H. Ishiwara, S. Furukawa, 1972 .

Surface modification of CaF2 in atomic layer scale by electron beam exposure

A. Izumi, S. Furukawa, S. M. Hwang, 1994 .

Antiphase disorder in epitaxial GaAs films grown on CaxSr1−xF2 (100) with higher crystallographic symmetry

H. Ishiwara, S. Furukawa, K. Tsutsui, 1986 .

Measurement of boron diffusivity in hydrogenated amorphous silicon by using nuclear reaction 10B(n,α)7Li

S. Furukawa, H. Matsumura, K. Sakai, 1983 .

Optimum Growth Conditions of GaAs(111)B Layers for Good Electrical Properties by Molecular Beam Epitaxy

S. Furukawa, K. Tsutsui, H. Mizukami, 1990 .

Profiles; How Well Can Experimental Results be Explained by Theories ?

H. Ishiwara, S. Furukawa, 1975 .

Study on impurity diffusion in the glow-discharged hydrogenated amorphous silicon

S. Furukawa, H. Matsumura, Masaaki Maeda, 1983 .

Preparation and Electrical Properties of An Amorphous SiC/Crystalline Si P+n Heterostructure

S. Furukawa, M. Rahman, 1984 .

Formation of Thick, Thermally-Stable High-Resistivity-Layers in GaAs by Oxygen Ion Implantation

H. Ishiwara, S. Furukawa, T. Asano, 1981 .

Conductivity and p-n type control of fluorinated amorphous silicon (a-Si:F) without incorporating hydrogen

Y. Nakagome, S. Furukawa, H. Matsumura, 1981 .

Resistivity control of sputtered amorphous-silicon by ion-implantation

H. Ishiwara, S. Furukawa, H. Matsumura, 1980 .

Amorphous/crystalline heterostructure as a novel approach to fabrication of a solar cell

S. Furukawa, M. Rahman, M. M. Rahman, 1984 .

Optimization of the Growth Conditions of Heteroepitaxial GaAs Films on CaF2/Si Structures

Hee-Chul Lee, H. Ishiwara, S. Furukawa, 1986 .

Investigation of inkjet printing conditions for microdot pressure-sensitive sensor on anodized aluminum substrate

Y. Egami, S. Furukawa, J. Ueyama, 2014 .

Theoretical Considerations in Lateral Damage Distribution Formed by Ion-Implantation

S. Furukawa, H. Matsumura, 1975 .

An amorphous SiC:H emitter heterojunction bipolar transistor

S. Furukawa, M.M. Rahman, K. Sasaki, 1985, IEEE Electron Device Letters.

Study of the uniformity and stoichiometry of CoSi2 films using Rutherford backscattering spectroscopy and scanning electron microscopy

S. Furukawa, K. Ishibashi, 1983 .

MOLECULAR BEAM EPITAXY OF CDF2 LAYERS ON CAF2(111) AND SI(111)

S. V. Gastev, A. Izumi, S. Furukawa, 1994 .

Double heteroepitaxy in the Si (111)/CoSi2/Si structure

H. Ishiwara, S. Furukawa, Shyuichi Saitoh, 1980 .

Channeling and backscattering studies of the crystalline perfection and the thermal stability of epitaxial PtSi films on Si

K. Hikosaka, H. Ishiwara, S. Furukawa, 1979 .

Characterization of epitaxial metal silicide films grown on silicon

K. Hikosaka, H. Ishiwara, S. Furukawa, 1979 .

(Invited) Epitaxial Silicide Films for Integrated Circuits and Future Devices

H. Ishiwara, S. Furukawa, 1982 .

Single Crystalline Silicide Formation

H. Ishiwara, S. Furukawa, T. Asano, 1981 .

Channeled ion implantation through metallic films

K. Hikosaka, H. Ishiwara, S. Furukawa, 1979 .

Investigation on solid phase epitaxy and its application

S. Furukawa, 1984 .

Laser Annealing of the Double-Hetero Si(lll)/CoSi 2 /Si Structure

H. Ishiwara, S. Furukawa, S. Saitoh, 1980 .

Channeling studies of radiation damage in metal‐silicides

K. Hikosaka, H. Ishiwara, S. Furukawa, 1978 .

Formation of Highly-Doped Thin Layers by Using Knock-on Effect

H. Ishiwara, S. Furukawa, 1977 .

A structure modeling of metal-silicide layers by using axial and planar channeling techniques

H. Ishiwara, S. Furukawa, M. Nagatomo, 1978 .

Formation of Uniform Solid-Phase Epitaxial CoSi2 Films by Patterning Method

Seijiro Furukawa, S. Furukawa, Kouichirou Ishibashi, 1985 .

Separate estimate of crystalline orientations and scattering centers in polycrystals by backscattering technique

H. Ishiwara, S. Furukawa, 1976 .

Lateral spread of damage formed by ion implantation

S. Furukawa, H. Matsumura, 1976 .

Formation of a Double-Hetero Si/CoSi2/Si Structure Using Molecular Beam and Solid Phase Epitaxies

H. Ishiwara, S. Furukawa, S. Saitoh, 1980 .

Low temperature annealing of B and P ions incorporated into deposited- and self-implanted amorphous Si

K. Naruke, H. Ishiwara, S. Furukawa, 1983 .

Annealing behavior of radiation damages in metal-silicides

K. Hikosaka, H. Ishiwara, S. Furukawa, 1980 .

On the Mechanisms of Lateral Solid Phase Epitaxial Growth of Amorphous Si Films Evaporated on SiO2 Patterns

H. Ishiwara, S. Furukawa, H. Yamamoto, 1985 .

Characterization of Solid-Phase Epitaxially-Grown Silicon Films on SiO2

H. Ishiwara, S. Furukawa, T. Tokuyama, 1984 .

Lateral solid phase epitaxy of amorphous Si films on Si substrates with SiO2 patterns

H. Ishiwara, S. Furukawa, T. Tokuyama, 1983 .

Growth Conditions of Deposited Si Films in Solid Phase Epitaxy

T. Sugii, H. Ishiwara, S. Furukawa, 1981 .

Formation of SPE-CoSi2 Submicron Line by Lift Off Using Selective Reaction

S. Furukawa, K. Ishibashi, 1984 .

Study on Formation of Solid-Phase-Epitaxial CoSi2, Films and Patterning Effects

H. Ishiwara, S. Furukawa, K. Ishibashi, 1983 .

Mass Dependence of Critical Amorphizing Dose in Ion Implantation

H. Ishiwara, S. Furukawa, 1972 .

A Novel Electron-Beam Exposure Epitaxy for Growing GaAs Films on Fluoride/Si Structures

Hee-Chul Lee, H. Ishiwara, S. Furukawa, 1987 .

Flattening the Surface of CaF2/Si(100) Structures by Post-Growth Annealing

H. Ishiwara, S. Furukawa, T. Asano, 1988 .

A heat‐resisting new amorphous silicon

Y. Nakagome, S. Furukawa, H. Matsumura, 1980 .

A new hydro-fluorinated amorphous silicon produced by using intermediate species SiF2

S. Furukawa, H. Matsumura, 1983 .

Mechanism of impurity diffusion in a-Si:H and diffusion blocking by fluorine inclusion

S. Furukawa, H. Matsumura, K. Sakai, 1983 .

Structural model of sputtered fluorinated amorphous silicon

S. Furukawa, H. Matsumura, Y. Kawakyu, 1981 .

MESFET's on a GaAs-on-insulator structure

H. Ishiwara, S. Furukawa, K. Tsutsui, 1987, IEEE Electron Device Letters.

Back-scattering study of heavy-ion distribution in semiconductors☆

H. Ishiwara, S. Furukawa, H. Matsumura, 1973 .

Theoretical and Experimental Studies on Lateral Spread of Implanted Ions

S. Furukawa, H. Matsumura, 1973 .

Boron Doping Effects in Lateral Solid Phase Epitaxy of Amorphous Si Films

H. Ishiwara, S. Furukawa, H. Yamamoto, 1985 .

Genuine wide-bandgap microcrystalline emitter Si-HBT with enhanced current gain by suppressing homocrystallization

S. Furukawa, Y. Kubota, K. Sasaki, 1992 .

Epitaxial Relations in Lattice-Matched (Ca, Sr)F2 Films Grown on GaAs{111} and Ge(111) Substrates

H. Ishiwara, S. Furukawa, K. Tsutsui, 1984 .

Heteroepitaxial Growth of GaAs Films on CaF2/Si(511) Structures Prepared with Rapid Thermal Annealing

H. Ishiwara, S. Furukawa, T. Asano, 1989 .

Sm2+ Photoluminescence and X-Ray Scattering Studies of A- and B-Type Epitaxial CaF2 Layers on Si(111)

S. Furukawa, J. Harada, I. Takahashi, 1994 .

Improvement of the Interface Properties of Fluoride/GaAs(100) Structures by Postgrowth Annealing

K. Kim, H. Ishiwara, S. Furukawa, 1988 .

Epitaxial relations in CaxSr1−xF2 films grown on GaAs {111} and Ge(111) substrates

H. Ishiwara, S. Furukawa, K. Tsutsui, 1985 .

Two Kinds of CdS High-Field Domain Modes

S. Furukawa, T. Hata, T. Motosugi, 1970 .

Ion beam mixing of Pt/GaAs and formation of ohmic contacts

S. Furukawa, K. Tsutsui, 1984 .

Electron-Beam Exposure(EBE) and Epitaxy of GaAs Films on CaF2/Si Structures

Hee-Chul Lee, H. Ishiwara, S. Furukawa, 1988 .

Excitation of surface‐wave acoustoelectric domains triggered by external signal

S. Furukawa, S. Matsumoto, 1974 .

GaInAsP/InP DH Laser with a Current Blocking Layer Made by Be Implantation

K. Iga, S. Furukawa, K. Moriki, 1982 .

Epitaxial growth of elemental semiconductor films onto silicide/Si and fluoride/Si structures

H. Ishiwara, S. Furukawa, T. Asano, 1983 .

Recrystallization of Silicon-on-Insulator Structures by Sinusoidally-Scanned Electron Beams

K. Ohyu, S. Horita, H. Ishiwara, 1985 .

Projected Range Distribution of Implanted Ions in a Double-Layer Substrate

S. Furukawa, H. Ishiwara, J. Yamada, 1975 .

HBTs Using a-SiC and µc-Si

S. Furukawa, K. Sasaki, 1992 .

Behaviors of Ga and P Damages Introduced by Ion-Implantation into GaP

S. Furukawa, H. Matsumura, 1975 .

Lateral solid phase epitaxy of amorphous Si films by selective surface doping method of P atoms

H. Ishiwara, S. Furukawa, T. Dan, 1988 .

Lateral solid phase epitaxy in selectively P‐doped amorphous Si films

Makoto Tanaka, H. Ishiwara, S. Furukawa, 1986 .

Lateral solid phase epitaxy of amorphous Si films onto nonplanar SiO2 patterns on Si substrates

H. Ishiwara, S. Furukawa, A. Tamba, 1986 .

Surface modification of CaF2 on Si(111) by low‐energy electron beam for over growth of GaAs films

A. Izumi, S. Furukawa, K. Tsutsui, 1994 .

Enhancement of Post-Cu-Chemical Mechanical Polishing Cleaning Process for Low-k Substrate

S. Furukawa, M. Miyamoto, S. Hirano, 2006 .

Improvement of thermal stability of boron in SiGeB/Si heterostructure by stress compensation

J. Sakano, S. Furukawa, 1994 .

Study of Shallow p+n Junction Formation Using SiGe/Si System

J. Sakano, S. Furukawa, 1993 .

Heteroepitaxy Of Semiconductor/Fluoride/Si Structures

H. Ishiwara, S. Furukawa, T. Asano, 1989 .

Study of Optimum Condition for Microcrystalline SiC Film Formation by ECR Plasma CVD Method

S. Furukawa, K. Sasaki, T. Miyajima, 1992 .

Performance of millimeter-wave detector using hot carriers in semiconductor

Kazuo Kikuchi, Seijiro Furukawa, S. Furukawa, 1981 .

Orientation Dependence of Lateral Solid-Phase-Epitaxial Growth in Amorphous Si Films

H. Ishiwara, S. Furukawa, H. Yamamoto, 1986 .

Influence of SiO2 cap layers on lateral solid-phase epitaxy of implanted amorphous Si films

H. Ishiwara, S. Furukawa, N. Tomita, 1989 .

Formation of GaAs-on-Insulator Structures on Si Substrates by Heteroepitaxial Growth of CaF2 and GaAs

Hee-Chul Lee, H. Ishiwara, S. Furukawa, 1986 .

Crystallinity of heteroepitaxial GaAs layers grown on (Ca, Sr)F2/CaF2/Si(100) structures by molecular beam epitaxy

S. Furukawa, K. Tsutsui, Junko Asano, 1991 .

Influence of off‐oriented substrates on the crystallinity of (Ca,Sr)F2 layers grown on Si (100)

S. Furukawa, K. Tsutsui, Junko Asano, 1990 .

Growth of single domain GaAs/fluoride/Si structures

H. Ishiwara, S. Furukawa, K. Tsutsui, 1989 .

Growth and Characterization of Compositionally Graded (Ca, Sr)F2 Layers on Si(111) Substrates

H. Ishiwara, S. Furukawa, S. Kanemaru, 1987 .

Heteroepitaxial growth of (Ca,Sr)F2 on Si(100) substrates by molecular beam epitaxy

S. Furukawa, K. Tsutsui, Junko Asano, 1990 .

Distribution of interfacial As atoms in the electron-beam exposure and epitaxy (EBE-epitaxy) technique for growing GaAs films on CaF2/Si(111) structures

Hee-Chul Lee, H. Ishiwara, S. Furukawa, 1990 .

Influence of Off-Oriented Substrates on Heteroepitaxial Growth of (Ca, Sr)F2 Layers on Si (100)

S. Furukawa, K. Tsutsui, Junko Asano, 1989 .

Heteroepitaxial Growth of High Quality GaAs Films on Rapid-Thermal-anealing Processed CaF 2 /Si(511) Structures

H. Ishiwara, S. Furukawa, T. Asano, 1988 .

Layered Structures Composed of Si, Ge, GaAs, and Fluorides

Hee-Chul Lee, H. Ishiwara, S. Furukawa, 1987 .

Heteroepitaxial Si-, Ge-, and Gaas-On-Insulator Structures on Si Substrates by Use of Fluoride Insulators

H. Ishiwara, S. Furukawa, T. Asano, 1987 .

GaAs-on-Insulator Structure Prepared by Heteroepitaxy of Fluorides and GaAs

H. Ishiwara, S. Furukawa, K. Tsutsui, 1986 .

Control of Crystal Orientations in Lattice-Mismatched SrF2 and (Ca, Sr)F2 Films on Si Substrates by Intermediate CaF2 Films

H. Ishiwara, S. Furukawa, S. Kanemaru, 1985 .

Lattice matching at elevated substrate temperature for growth of GaAs films with good electrical properties on CaxSr1−xF2/GaAs(100) structures

H. Ishiwara, S. Furukawa, K. Tsutsui, 1986 .

A novel heteroepitaxy method of Ge films on CaF2 by electron beam exposure

H. Ishiwara, S. Furukawa, S. Kanemaru, 1988 .

Improvement of the quality of Ge films on CaF2/Si(111) structures by predeposited thin Ge layers

H. Ishiwara, S. Furukawa, S. Kanemaru, 1986 .

Control of the Initial Stage of Ge Overgrowth on CaF 2 /Si Structures by Electron Beam Exposure

H. Ishiwara, S. Furukawa, S. Kanemaru, 1987 .

Control of rotational twins in a SOI-GaAs film grown on surface modified fluoride/Si(111)

S. Furukawa, K. Tsutsui, Atsuki Ono, 1992 .

A Novel Growth Method for High Quality GaAs/CaF 2 /Si(111) Structures by Using “Type-A” CaF 2 Film

S. Furukawa, K. Tsutsui, H. Mizukami, 1991 .

Improvement of Crystalline Quality of Si Films on CaF2/Si Structures by Ion Implantation and Solid Phase Recrystallization

H. Ishiwara, S. Furukawa, T. Asano, 1983 .

Ion-irradiation-enhanced dissolution of epitaxial fluoride films: A new class of inorganic single-crystal ion resist

H. Ishiwara, S. Furukawa, T. Asano, 1989 .