Guanjie Li

发表

Intrinsic stress-induced adaptive ferroelectric domain rearrangement in the monoclinic Pb(Mg1/3Nb2/3)O3–PbTiO3 single crystal

K. Zhao, H. Zeng, H. Luo, 2009 .

Epitaxial growth mechanism of perovskite (1 1 1) SrTiO3 on wurtzite (0 0 0 2) GaN with single unit-cell TiN buffer layers

Xiaomin Li, Guanjie Li, S. Jia, 2019, Applied Surface Science.

Integration of BaTiO3/CoFe2O4 multiferroic heterostructure on GaN semiconductor

Xiaomin Li, Guanjie Li, Xiangdong Gao, 2019, CrystEngComm.

Heteroepitaxy of perovskite (111) SrTiO3 on wurtzite (0002) GaN using an artificial interface lattice design

Xiaomin Li, Guanjie Li, Xiangdong Gao, 2019, CrystEngComm.

Epitaxial integration of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (111) thin films on GaN (0002) with La0.5Sr0.5CoO3/TiO2 buffer layers

Xiaomin Li, Z. Bi, Guanjie Li, 2018 .

3D nanotube-structured Ni@MnO2 electrodes: Toward enhanced areal capacitance of planar supercapacitors

Xiaomin Li, Guanjie Li, Xiangdong Gao, 2019, Applied Surface Science.

Stamp-assisted printing of nanotextured electrodes for high-performance flexible planar micro-supercapacitors

Xiaoli He, Xiaomin Li, Z. Bi, 2018, Chemical Engineering Journal.

Epitaxial growth of perovskite (111) 0.65PMN-0.35PT films directly on wurtzite GaN (0002) surface

Xiaomin Li, Jiayue Xu, Guanjie Li, 2018, Applied Physics A.

Strong interfacial coupling effects of ferroelectric polarization with two-dimensional electron gas in BaTiO3/MgO/AlGaN/GaN/Si heterostructures

Xiaomin Li, Guanjie Li, Yongbo Chen, 2019, Journal of Materials Chemistry C.

Design and Construction of Hierarchical TiO 2 Nanorod Arrays by Combining Layer-by-Layer and Hydrothermal Crystallization Techniques for Electrochromic Application

Xiaomin Li, Z. Bi, Guanjie Li, 2018 .

Direct and simultaneous observation of ferroelectric and magnetic domains

Yongxiang Li, K. Zhao, Q. Yin, 2009 .

Heteroepitaxy of Hf0.5Zr0.5O2 ferroelectric gate layer on AlGaN/GaN towards normally-off HEMTs

Xinke Liu, Guanjie Li, A. Gao, 2022, Applied Surface Science.

Design principle for a p-type oxide gate layer on AlGaN/GaN toward normally-off HEMTs: Li-doped NiO as a model

Xiaomin Li, Guanjie Li, Xiangdong Gao, 2020, Journal of Materials Chemistry C.

Epitaxial growth of (111) BaTiO3 thin films on (0002) GaN substrates with SrTiO3/TiN buffer layers

Xiaomin Li, Guanjie Li, S. Jia, 2019, Journal of Materials Science: Materials in Electronics.