J. Barnes

发表

Role of the chemical composition and structure on the electrical properties of a solid state electrolyte: Case of a highly conductive LiPON

Steve W. Martin, F. Sabary, L. Van-Jodin, 2018 .

Impact of the TiN electrode deposition on the HfO2 band gap for advanced MOSFET gate stacks

M. Gros-Jean, S. Lhostis, N. Rochat, 2011 .

Reliability improvements of TiN/Al2O3/TiN for linear high voltage metal–insulator–metal capacitors using an optimized thermal treatment

J. Barnes, G. Parat, A. Lefèvre, 2017 .

Back-end-of-line integration approaches for resistive memories

J. Nodin, H. Grampeix, B. De Salvo, 2009, 2009 IEEE International Interconnect Technology Conference.

Undoped SiGe material calibration for numerical nanosecond laser annealing simulations

S. Kerdilès, F. Cristiano, K. Huet, 2020, 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Investigation of sidewall damage induced by reactive ion etching on AlGaInP MESA for micro-LED application

N. Rochat, C. Licitra, J. Barnes, 2021 .

Anisotropic and low damage III-V/Ge heterostructure etching for multijunction solar cell fabrication with passivated sidewalls

V. Aimez, M. Volatier, A. Jaouad, 2021 .

ToF-SIMS imaging of Cl at Cu grain boundaries in interconnects for microelectronics

S. Maitrejean, J. Barnes, V. Carreau, 2008 .

Comparative study of non-polar switching behaviors of NiO- and HfO2-based Oxide Resistive-RAMs

J. Nodin, H. Grampeix, A. Roule, 2010, 2010 IEEE International Memory Workshop.

Thin-Wall GaN/InAlN Multiple Quantum Well Tubes.

J. Eymery, J. Carlin, N. Grandjean, 2017, Nano letters.

Study of defects in Al2O3 blocking layers of TANOS memories by atomistic simulation, electrical characterization and physico-chemical material analyses

G. Molas, E. Vianello, P. Blaise, 2011, Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications.

Defects-induced gap states in hydrogenated γ-alumina used as blocking layer for non-volatile memories

G. Molas, P. Blaise, G. Ghibaudo, 2011 .

Investigation of the role of H-related defects in Al2O3 blocking layer on charge-trap memory retention by atomistic simulations and device physical modelling

G. Molas, E. Vianello, P. Blaise, 2010, 2010 International Electron Devices Meeting.

The influence of grain size on the creep of uranium dioxide

J. Barnes, B. Burton, G. Reynolds, 1973 .

Structural properties of tensile-strained Si layers grown on Si1−xGex virtual substrates (x = 0.2, 0.3, 0.4 and 0.5)

J. Hartmann, D. Rouchon, M. Mermoux, 2008 .

Carrier mobility degradation due to high dose implantation in ultrathin unstrained and strained silicon-on-insulator films

O. Faynot, G. Ghibaudo, J. Hartmann, 2007 .

Interface stability of thin, dense CGO film coating on YSZ for solid oxide fuel cells

E. Djurado, C. Rossignol, J. Barnes, 2013 .

Direct examination of Si atoms spatial distribution and clustering in GaAs thin films with atom probe tomography

Mickael Martin, T. Baron, R. Alcotte, 2018, Scripta Materialia.

Specifications for Hard Condensed Matter Specimens for Three-Dimensional High-Resolution Tomographies

P. Bleuet, H. Dansas, J. Barnes, 2013, Microscopy and Microanalysis.

Influence of implantation temperature on the formation of hydrogen-related defects in InP

T. Salvetat, N. Rochat, J. Barnes, 2014, 2014 20th International Conference on Ion Implantation Technology (IIT).

Disilane-based cyclic deposition/etch of Si, Si:P and Si1−yCy:P layers: I. The elementary process steps

J. Hartmann, J. Barnes, C. Deguet, 2013 .

Drying Impact on Semiconductor Surfaces after Innovative Solvent Exposure

F. Fournel, L. Clavelier, I. Radu, 2009 .

nanometer-scale chemistry of fluid-silicate interfaces

T. Epicier, J. Barnes, R. Wirth, 2012 .

Fracture in Epitaxial InP on Si for InGaAs on Insulator Fabrication via Smart Cut™

S. Sollier, J. Widiez, B. Colombeau, 2016, 2016 21st International Conference on Ion Implantation Technology (IIT).

Resputtering and morphological changes of Au nanoparticles in nanocomposites as a function of the deposition conditions of the oxide capping layer

P. Midgley, M. Weyland, A. Petford-Long, 2005 .

GaAs WET and Siconi Cleaning Sequences for an Efficient Oxide Removal

P. Besson, V. Loup, Mickael Martin, 2019, ECS Journal of Solid State Science and Technology.

p-on-n HgCdTe Infrared Focal-Plane Arrays: From Short-Wave to Very-Long-Wave Infrared

J. Barnes, O. Gravrand, N. Baier, 2014, Journal of Electronic Materials.

Strain measurement at the nanoscale: Comparison between convergent beam electron diffraction, nano-beam electron diffraction, high resolution imaging and dark field electron holography.

J. Barnes, J. Rouviere, D. Cooper, 2013, Ultramicroscopy.

Program at a glance

T. Ernst, É., K. Tachi, 1972, 2009 International Conference on Intelligent Agent & Multi-Agent Systems.

Nanofibrillated cellulose surface grafting in ionic liquid

M. Brochier-Salon, J. Bras, J. Barnes, 2012 .

3D correlative morphological and elemental characterization of materials at the deep submicrometre scale

P. Bleuet, J. Barnes, G. Audoit, 2016, Journal of microscopy.

GeTe phase change material and Ti based electrode: Study of thermal stability and adhesion

A. Roule, S. Maitrejean, M. Verdier, 2011 .

Experiments and simulation of the diffusion and activation of the n-type dopants P, As, and Sb implanted into germanium

P. Scheiblin, P. Pichler, L. Frey, 2011 .

M-plane core-shell InGaN/GaN multiple-quantum-wells on GaN wires for electroluminescent devices.

J. Eymery, M. Tchernycheva, C. Bougerol, 2011, Nano letters.

Local redistribution of dopants and defects induced by annealing in polycrystalline compound semiconductors

G. Feuillet, V. Consonni, J. Barnes, 2009 .

(Invited) Cyclic Deposition/Etch Processes for the Formation of Si Raised Sources and Drains in Advanced MOSFETs

N. Cherkashin, J. Hartmann, B. Previtali, 2010 .

Strain mapping with nm-scale resolution for the silicon-on-insulator generation of semiconductor devices by advanced electron microscopy

J. Hartmann, L. Hutin, T. Denneulin, 2012 .

Mushroom-Free Selective Epitaxial Growth of Si, SiGe and SiGe:B Raised Sources and Drains on FD-SOI MOSFETs

D. Dutartre, J. Hartmann, N. Loubet, 2012, 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM).

Dopant profiling of focused ion beam milled semiconductors using off-axis electron holography; reducing artifacts, extending detection limits and reducing the effects of gallium implantation

Rafal E. Dunin-Borkowski, Jean-Michel Hartmann, Jean-Paul Barnes, 2010 .

Identifying exposition to low oxygen environment in human macrophages using secondary ion mass spectrometry and multivariate analysis.

J. Barnes, M. Court, A. Millet, 2017, Rapid communications in mass spectrometry : RCM.

Efficiency of reducing and oxidizing ash plasmas in preventing metallic barrier diffusion into porous SiOCH

N. Possémé, T. Chevolleau, C. Licitra, 2008 .

Bulk and interface band diagrams of advanced intermetal dielectrics

A. Toffoli, D. Lafond, E. Martinez, 2007, 2007 IEEE International Electron Devices Meeting.

Study on C60 Doped PMMA for Organic Memory Devices

Gerard Ghibaudo, C. Licitra, Raluca Tiron, 2010 .

Tunneling spectroscopy of p-type doping in silicon from boron-containing molecular monolayer

B. Grandidier, C. Copéret, J. Barnes, 2016 .

Structure and thermal stability of Fe :A l 2 O 3 nanocomposite films

R. Serna, J. Barnes, J. Gonzalo, 2002 .

BORON CONCENTRATION MEASUREMENTS AT THE I/P INTERFACE IN NIP A-SI SOLAR CELLS

C. Boothroyd, J. Barnes, M. Duchamp, 2011 .

The Shallow Implantation of Bismuth During the Growth of Bismuth Nanocrystals in Al 2 O 3 by Pulsed Laser Deposition

C. Afonso, A. Petford-Long, R. Serna, 2003 .

Characterization of advanced ALD-based thin film barriers for organic electronics using ToF-SIMS analysis

T. Maindron, T. Terlier, J. Barnes, 2018, Organic Electronics.

Measuring Compositions in Organic Depth Profiling: Results from a VAMAS Interlaboratory Study.

M. Alexander, A. Benayad, D. Scurr, 2015, The journal of physical chemistry. B.

Quantitative analysis of Si/SiGeC superlattices using atom probe tomography.

J. Hartmann, T. Terlier, J. Barnes, 2015, Ultramicroscopy.

CHAPTER 15:Secondary Ion Mass Spectrometry

H. Jungnickel, J. Audinot, J. Barnes, 2014 .

ToF-SIMS Depth Profiling of PS-b-PMMA Block Copolymers Using Arn+, C60++, and Cs+ Sputtering Ions.

T. Terlier, J. Barnes, D. Léonard, 2017, Analytical chemistry.

Particular structural defects in Ta2O5 from crystallisation of amorphous thin films in O2–H2O atmosphere

J. Barnes, M. Audier, L. Rapenne, 2015 .

Demonstration of Phase Change Memories devices using Ge2Sb2Te5 films deposited by Atomic Layer Deposition

A. Toffoli, S. Maitrejean, L. Perniola, 2011, 2011 IEEE International Interconnect Technology Conference.

Suppression of self-organized surface nanopatterning on GaSb/InAs multilayers induced by low energy oxygen ion bombardment by using simultaneously sample rotation and oxygen flooding

Mickael Martin, T. Baron, J. Barnes, 2018 .

Ti impact in C-doped phase-change memories compliant to Pb-free soldering reflow

E. Souchier, A. Roule, S. Maitrejean, 2012, 2012 International Electron Devices Meeting.

Unifying natural and laboratory chemical weathering with interfacial dissolution–reprecipitation: A study based on the nanometer-scale chemistry of fluid–silicate interfaces

Thierry Epicier, Jean-Paul Barnes, Roland Hellmann, 2012 .

Advanced backside sample preparation for multi-technique surface analysis

J. Barnes, B. Pélissier, M. Veillerot, 2011 .

Preparation and Analysis of Atom Probe Tips by Xenon Focused Ion Beam Milling

J. Barnes, D. Blavette, G. Audoit, 2016, Microscopy and Microanalysis.

Elemental characterization of Al nanoparticles buried under a Cu thin film - TOF-SIMS vs. STEM/EDX.

T. Edwards, J. Michler, J. Barnes, 2020, Analytical chemistry.

Tensile creep of beta-phase zircaloy-2

G. L. Reynolds, J. Barnes, B. Burton, 1978 .

The influence of grain size on the creep of uranium dioxide

J. Barnes, B. Burton, G. Reynolds, 1973 .

Impact of Pt on the phase formation sequence, morphology, and electrical properties of Ni(Pt)/Ge0.9Sn0.1 system during solid-state reaction

J. Hartmann, F. Nemouchi, V. Loup, 2018, Journal of Applied Physics.

3D analysis of advanced nano-devices using electron and atom probe tomography.

S. Barraud, G. Audoit, L. Arnoldi, 2014, Ultramicroscopy.

3 D analysis of advanced nano-devices using electron and atom probe tomography

S. Barraud, L. Arnoldi, F. Bertin, 2013 .

Quantitative depth profiling of ultrathin high-k stacks with full spectrum time of flight–secondary ion mass spectrometry

J. Barnes, K. Kimura, K. Nakajima, 2011 .

Backside medium energy ion scattering study of the lanthanum diffusion in advanced gate stacks for the 32nm node

F. Bertin, J. Barnes, D. Jalabert, 2013 .

Atom probe tomography for advanced nanoelectronic devices: Current status and perspectives

Sylvain Barraud, Wilfried Vandervorst, Didier Blavette, 2017 .

3D imaging of nanoparticles in an inorganic matrix using TOF-SIMS validated with STEM and EDX.

T. Edwards, J. Michler, J. Barnes, 2019, Analytical chemistry.

Three dimensional imaging and analysis of a single nano-device at the ultimate scale using correlative microscopy techniques

P. Gouraud, J. Barnes, N. Rolland, 2015 .

Combining plasma profiling TOFMS with TOF-SIMS depth profiling for microelectronic applications

A. Tempez, J. Barnes, E. Nolot, 2016 .

Quantitative profiling of SiGe/Si superlattices by time-of-flight secondary ion mass spectrometry: the advantages of the extended Full Spectrum protocol.

J. Hartmann, D. Lafond, J. Barnes, 2011, Rapid communications in mass spectrometry : RCM.

Quantification of SiGe layer composition using MCs+ and MCs2+ secondary ions in ToF-SIMS and magnetic SIMS

J. Hartmann, J. Barnes, F. Fillot, 2008 .

Spin injection from the Heusler alloy Co2MnGe into Al0.1Ga0.9As∕GaAs heterostructures

C. Adelmann, X. Lou, A. Petford-Long, 2004, cond-mat/0410751.

Growth kinetics of SiGe/Si superlattices on bulk and silicon-on-insulator substrates for multi-channel devices

J. Hartmann, A. Papon, J. Barnes, 2009 .

Competing processes during the production of metal nanoparticles by pulsed laser deposition

C. Afonso, P. Townsend, A. Petford-Long, 2005 .

Analysis of IGZO Thin-Film Transistors by XPS and Relation With Electrical Characteristics

Olivier Renault, Bernard Aventurier, Francois Templier, 2013, Journal of Display Technology.

Experimental off-axis electron holography of focused ion beam-prepared Si p-n junctions with different dopant concentrations

R. Truche, J. Hartmann, F. Bertin, 2008 .

3D Auger quantitative depth profiling of individual nanoscaled III–V heterostructures

T. Baron, E. Martinez, J. Barnes, 2016 .

99.992% 28Si CVD-grown epilayer on 300 mm substrates for large scale integration of silicon spin qubits

J. Hartmann, L. Hutin, V. Mazzocchi, 2018, Journal of Crystal Growth.

Boron and Phosphorus dopant activation in Germanium using laser annealing with and without preamorphization implant

M. Vinet, L. Hutin, C. Le Royer, 2009, 2009 17th International Conference on Advanced Thermal Processing of Semiconductors.

Dark field electron holography for strain measurement.

J. Barnes, J. Rouviere, D. Cooper, 2011, Ultramicroscopy.

Characterization of micro-pixelated InGaP/AlGaInP quantum well structures

Badhise Ben Bakir, Bruno Masenelli, Christophe Licitra, 2020, OPTO.

Multitechnique elemental depth profiling of InAlGaN and InAlN films

M. Charles, A. Tempez, J. Barnes, 2018 .

Impact of growth conditions on AlN/GaN heterostructures with in-situ SiN capping layer

M. Charles, J. Barnes, C. Leroux, 2019, Journal of Crystal Growth.

Analysis of High Aspect Ratio through Silicon via (TSV) Diffusion and Stress Impact Profile during 3D Advanced Integration

L. Vandroux, D. Rouchon, J. Barnes, 2014 .

A novel PFIB sample preparation protocol for correlative 3D X-ray CNT and FIB-TOF-SIMS tomography.

J. Barnes, G. Audoit, A. Priebe, 2017, Ultramicroscopy.

Characterization and modeling of structural properties of SiGe/Si superlattices upon annealing

P. Rivallin, J. Hartmann, P. Rivallin, 2011 .

Dark field electron holography for quantitative strain measurements with nanometer-scale spatial resolution

J. Hartmann, J. Barnes, J. Rouviere, 2009 .

Functionalization of Silica Nanoparticles and Native Silicon Oxide with Tailored Boron-Molecular Precursors for Efficient and Predictive p-Doping of Silicon

S. Kerdiles, Hervé Fontaine, François Martin, 2015 .

Accurate depth profiling of dry oxidized SiGeC thin films by extended Full Spectrum ToF-SIMS

J. Hartmann, E. Saracco, J. Damlencourt, 2011 .

Impact of the H2 anneal on the structural and optical properties of thin and thick Ge layers on Si; Low temperature surface passivation of Ge by Si

Laurent Vivien, J. M. Fedeli, Jean-Paul Barnes, 2010 .

Dopant Effect On NiGe Texture During Nickel Germanide Growth

O. Kermarrec, Y. Campidelli, F. Nemouchi, 2007 .

Very Low Temperature Epitaxy of Heavily In Situ Phosphorous Doped Ge Layers and High Sn Content GeSn Layers

Jean-Michel Hartmann, Matthias Bauer, Jean-Paul Barnes, 2017 .

Planar p-on-n HgCdTe FPAs by Arsenic Ion Implantation

J. Rothman, Gérard Destefanis, Michael Tchagaspanian, 2009 .

Off-axis electron holography of Si semiconductors prepared using FIB milling

J. Hartmann, F. Bertin, J. Barnes, 2010 .

Status of p-on-n Arsenic-Implanted HgCdTe Technologies

O. Gravrand, Gérard Destefanis, A. Kerlain, 2011 .

Ultrathin (5 nm) SiGe-On-Insulator with high compressive strain (−2 GPa): From fabrication (Ge enrichment process) to in-depth characterizations

W. Schwarzenbach, O. Bonnin, J. Hartmann, 2014 .

MBE growth and interfaces characterizations of strained HgTe/CdTe topological insulators

P. Jouneau, J. Barnes, S. Pouget, 2015 .

Structural, electrical and optical properties of in-situ phosphorous-doped Ge layers

J. M. Fedeli, Marc Veillerot, Jean-Paul Barnes, 2012 .

Low temperature boron and phosphorous doped SiGe for recessed and raised sources and drains

J. Hartmann, P. Batude, B. Previtali, 2011 .

Photoemission induced bias in two-dimensional silicon pn junctions

J. Hartmann, D. Mariolle, J. Barnes, 2011 .

Experimental Investigation of the Impact of Implanted Phosphorus Dose and Anneal on Dopant Diffusion and Activation in Germanium

P. Scheiblin, V. Mazzocchi, M. Hopstaken, 2008 .

Measuring the diffusion of Ti and Cu in low-k materials for microelectronic devices by EELS, EFTEM and EDX

S. Maitrejean, D. Lafond, N. Possémé, 2006 .

Two-step cycling process alternating implantation and remote plasma etching for topographically selective etching: Application to Si3N4 spacer etching

V. Renaud, J. Barnes, E. Pargon, 2019 .

High density and taper-free boron doped Si1−xGex nanowire via two-step growth process

T. Baron, B. Salem, J. Barnes, 2014 .

Focused ion beam time-of-flight secondary ion mass spectroscopy tomography of through-silicon vias for 3D integration

J. Barnes, G. Audoit, S. Minoret, 2016 .

State-of-the-Art Three-Dimensional Chemical Characterization of Solid Oxide Fuel Cell Using Focused Ion Beam Time-of-Flight Secondary Ion Mass Spectrometry Tomography

P. Bleuet, J. Barnes, J. Laurencin, 2016, Microscopy and Microanalysis.

Investigation of nBTI degradation on GaN-on-Si E-mode MOSc-HEMT

J. Cluzel, G. Ghibaudo, R. Modica, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

Low defect InGaAs quantum well selectively grown by metal organic chemical vapor deposition on Si(100) 300 mm wafers for next generation non planar devices

X. Bao, C. Vizioz, V. Loup, 2014 .

Structural studies of Ag nanocrystals embedded in amorphous Al2O3 grown by pulsed laser deposition

Carmen N. Afonso, Rosalía Serna, D. E. Hole, 2002 .

Optical response of mixed Ag-Cu nanocrystals produced by pulsed laser deposition

C. Afonso, J. Barnes, J. Gonzalo, 2004 .

Impact of Passivation Conditions on Characteristics of Bottom-Gate IGZO Thin-Film Transistors

Bernard Aventurier, Francois Templier, Thi Thu Thuy Nguyen, 2015, Journal of Display Technology.

Impact of hydrogen diffusion on electrical characteristics of IGZO TFTs passivated by SiO2 or Al2O3

Thi Thu Thuy Nguyen, T. Terlier, J. Barnes, 2014, 2014 21st International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).

Structure and thermal stability of Fe : Al2O3 nanocomposite films

A. Petford-Long, R. Serna, J. Barnes, 2002 .

Measuring Compositions in Organic Depth Profiling: Results from a VAMAS Interlaboratory Study.

A. Benayad, D. Scurr, Gautam Mishra, 2015, The journal of physical chemistry. B.

M-plane core-shell InGaN/GaN multiple-quantum-wells on GaN wires for electroluminescent devices.

J. Eymery, M. Tchernycheva, C. Bougerol, 2011, Nano letters.

New insights on bottom layer thermal stability and laser annealing promises for high performance 3D VLSI

X. Garros, P. Batude, M. Vinet, 2014, 2014 IEEE International Electron Devices Meeting.