K. Yamane

发表

Growth of phosphide-based type-II stacked quantum dots for III–V/Si photovoltaic applications

Jose A. Piedra-Lorenzana, K. Yamane, Akihito Hori, 2021 .

Alternately double‐sided growth of low‐curvature GaN templates on sapphire substrates using hydride vapor phase epitaxy

K. Yamane, H. Ihara, N. Okada, 2016 .

Growth of semipolar {20–21} GaN and {20–2–1} GaN for GaN substrate

Y. Hashimoto, K. Yamane, N. Okada, 2016 .

Estimation of Ga adatom diffusion length for GaP growth by molecular beam epitaxy

Jose A. Piedra-Lorenzana, K. Yamane, A. Wakahara, 2019, Journal of Crystal Growth.

Fabrication of Si/SiO2/GaN structure by surface-activated bonding for monolithic integration of optoelectronic devices

K. Yamane, A. Wakahara, H. Okada, 2016 .

Successful natural stress-induced separation of hydride vapor phase epitaxy-grown GaN layers on sapphire substrates

H. Furuya, K. Yamane, N. Okada, 2012 .

Self-Separation of Large Freestanding Semipolar {112̄2} GaN Films Using r-Plane Patterned Sapphire Substrates

H. Furuya, K. Yamane, N. Okada, 2013 .

Characterization of structural defects in semipolar GaN layers grown on patterned sapphire substrates

Y. Hashimoto, K. Yamane, N. Okada, 2014 .

Mechanism of improved crystallinity by defect-modification in proton-irradiated GaAsPN photovoltaics: Experimental and first-principle calculations approach

M. Imaizumi, E. Pavelescu, K. Yamane, 2022, Journal of Applied Physics.

Origin of lattice bowing of freestanding GaN substrates grown by hydride vapor phase epitaxy

K. Yamane, A. Wakahara, Takeshi Yamamoto, 2016 .

Improved utilization efficiency of Ga source and flatness of GaN layer by pulsed-GaCl flow modulation on hydride vapor phase epitaxy

Y. Hashimoto, K. Yamane, N. Okada, 2014 .

InGaN-Based Light-Emitting Diodes Fabricated on Nano Patterned Sapphire Substrates with Pillar Height of More than 600 nm by Nanoimprint Lithography

K. Yamane, N. Okada, K. Tadatomo, 2013 .

GaN‐Based Monolithic Inverter Consisting of Enhancement‐ and Depletion‐Mode MOSFETs by Si Ion Implantation

K. Yamane, A. Wakahara, H. Okada, 2019, physica status solidi (a).

Observation of single optical site of Eu and Mg codoped GaN grown by NH3-source molecular beam epitaxy

K. Yamane, A. Wakahara, H. Okada, 2019, Journal of Applied Physics.

Evaluation of Heteroepitaxially Grown Semipolar {20-21} GaN on Patterned Sapphire Substrate

Y. Hashimoto, K. Yamane, N. Okada, 2014 .

Operation of Monolithically-Integrated Digital Circuits with Light Emitting Diodes Fabricated in Lattice-Matched Si/III–V–N/Si Heterostructure

K. Yamane, A. Wakahara, H. Okada, 2010 .

Growth of low defect density GaP layers on Si substrates within the critical thickness by optimized shutter sequence and post-growth annealing

K. Yamane, A. Wakahara, H. Okada, 2010 .

Growth of pit-free GaP on Si by suppression of a surface reaction at an initial growth stage

Yuzo Furukawa, Hiroshi Okada, Akihiro Wakahara, 2009 .

Influence of electron irradiation and rapid thermal annealing on photoluminescence from GaAsNBi alloys

R. Goldman, E. Pavelescu, K. Yamane, 2020 .

Structural and optical properties of Eu-doped GaN nanocolumns on (111) Si substrates grown by RF-plasma-assisted molecular beam epitaxy

K. Yamane, A. Wakahara, K. Kishino, 2016 .

Eu3+ luminescence properties of Eu- and Mg-codoped AlGaN

K. Yamane, A. Wakahara, H. Okada, 2015 .

Regularly arranged Eu-doped GaN nanocolumns grown by RF-plasma-assisted molecular beam epitaxy through Ti-mask selective-area growth technique

K. Yamane, A. Wakahara, K. Kishino, 2019, Journal of Crystal Growth.

Growth of semipolar {11$ \bar 2 $2} GaN using SiNx intermediate layer by hydride vapor phase epitaxy

Y. Hashimoto, K. Yamane, N. Okada, 2014 .

Investigation of HCl-based surface treatment for GaN devices

K. Yamane, A. Wakahara, H. Okada, 2016 .

Formation of SiO2 film by chemical vapor deposition enhanced by atomic species extracted from a surface-wave generated plasma

K. Yamane, A. Wakahara, H. Okada, 2017 .

Crystalline property analysis of semipolar (20–21) GaN on (22–43) patterned sapphire substrate by X‐ray microdiffraction and transmission electron microscopy

Y. Hashimoto, Y. Imai, S. Kimura, 2015 .

Thickness and growth condition dependence of crystallinity in semipolar (20–21) GaN films grown on (22–43) patterned sapphire substrates

Y. Hashimoto, K. Yamane, S. Takeuchi, 2015 .

Monolithic integration of Si-MOSFET and GaN-LED using Si/SiO2/GaN-LED wafer

K. Yamane, A. Wakahara, H. Okada, 2016 .

Bulk GaN substrate with overall dislocation density on the order of 105/cm2 fabricated by hydride vapor phase epitaxy

K. Yamane, T. Ezaki, N. Okada, 2017 .

Metal‐organic vapor phase epitaxy of GaPN alloys via surface nitridation using ammonia

K. Yamane, A. Wakahara, H. Okada, 2017 .

Improved External Quantum Efficiency and Controlled Light Distribution for Light-Emitting Diodes with Cone Array Composed of SiOxNy

K. Yamane, N. Okada, K. Tadatomo, 2012 .

Impact of temperature and nitrogen composition on the growth of GaAsPN alloys

S. Mugikura, K. Yamane, A. Wakahara, 2018 .

Performance of InGaN/GaN light-emitting diodes grown using NH3 with oxygen-containing impurities

K. Yamane, N. Okada, K. Tadatomo, 2014 .

Improved crystallinity of GaP-based dilute nitride alloys by proton/electron irradiation and rapid thermal annealing

M. Imaizumi, T. Sumita, E. Pavelescu, 2022, Japanese Journal of Applied Physics.

Doping control of GaAsPN alloys by molecular beam epitaxy for monolithic III-V/Si tandem solar cells

K. Yamane, A. Wakahara, H. Okada, 2017 .

Growth of a lattice-matched GaAsPN p–i–n junction on a Si substrate for monolithic III–V/Si tandem solar cells

K. Yamane, A. Wakahara, H. Okada, 2017 .

High-quality {20-21} GaN layers on patterned sapphire substrate with wide-terrace

K. Yamane, N. Okada, K. Tadatomo, 2011 .