H. Jia

发表

Photoluminescence characteristics of InGaP/GaAs dual-junction solar cells under current mismatch conditions

Wenxue Huo, Minglong Zhao, Xiansheng Tang, 2019, Applied Physics Express.

Characteristics of InGaP/GaAs double junction thin film solar cells on a flexible metallic substrate

Wenxue Huo, Xiansheng Tang, Yang Jiang, 2018, Solar Energy.

Monolithic light emitting device and light detecting device fabricated with a commercial LED wafer

Xiansheng Tang, Wenxin Wang, H. Jia, 2020 .

Direct Observation of Carrier Transportation Process in InGaAs/GaAs Multiple Quantum Wells Used for Solar Cells and Photodetectors*

Yang Jiang, Wenxin Wang, Hong Chen, 2016 .

The enhanced photo absorption and carrier transportation of InGaN/GaN Quantum Wells for photodiode detector applications

Yang Jiang, H. Jia, P. Zuo, 2017, Scientific Reports.

Room-temperature operating extended short wavelength infrared photodetector based on interband transition of InAsSb/GaSb quantum well*

Z. Hao, Wenxin Wang, H. Jia, 2018 .

Improvement of Breakdown Characteristics of a GaN HEMT with AlGaN Buffer Layer

W. Luo, T. He, H. Jia, 2012, Journal of Electronic Materials.

Recent progress of GaN growth on maskless chemical-etched grooved sapphire substrate

Yang Jiang, Wenxin Wang, H. Jia, 2011 .

White light-emitting diodes based on a single InGaN emission layer

Xuan Wang, Hong Chen, H. Jia, 2007 .

Stripping GaN/InGaN epitaxial films and fabricating vertical GaN-based light-emitting diodes

Xiansheng Tang, L. Han, Z. Deng, 2021 .

Effect of Stair-Case Electron Blocking Layer on the Performance of Blue InGaN Based LEDs

Yang Jiang, Hong Chen, Chunhua Du, 2014, Journal of Display Technology.

Recent progress in single chip white light-emitting diodes with the InGaN underlying layer

Hong Chen, H. Jia, Xiaoli Wang, 2010 .

Dark current investigation in individual planar In0.53Ga0.47As/InP detector and fine pixel-pitch array with spacing variations

L. Han, Z. Deng, Wenxin Wang, 2021, Results in Optics.

Effect of H2 treatment in barrier on interface, optical and electrical properties of InGaN light emitting diodes

Yimeng Song, Z. Deng, Yang Jiang, 2020 .

Alleviation of parasitic reactions for III-nitride epitaxy in MOCVD with a spatial separated source delivery method by controlling the main reaction type

Yang Jiang, Wenxin Wang, H. Jia, 2017 .

Characteristic improvements of thin film AlGaInP red light emitting diodes on a metallic substrate

Wenxue Huo, Minglong Zhao, Xiansheng Tang, 2018 .

Temperature-dependent photoluminescence in light-emitting diodes

Yang Jiang, Chunhua Du, H. Jia, 2014, Scientific Reports.

Temperature-dependent photoluminescence in light-emitting

Yang Jiang, Hong Chen, H. Jia, 2014 .

Optimization of p-GaP reflective electrode for vertical LED

L. Han, Z. Deng, H. Jia, 2021, Results in Physics.

Growth and Characterization of InAs 1 −x Sb x with Different Sb Compositions on GaAs Substrates

Meicheng Li, Wenxin Wang, Hong Chen, 2015 .

Wing-tilt-free gallium nitride laterally grown on maskless chemical-etched sapphire-patterned substrate

H. Jia, J. Zhou, L. W. Guo, 2005 .

Improvement of light power and efficiency droop in GaN-based LEDs using graded InGaN hole reservoir layer

Yang Jiang, Hong Chen, Chunhua Du, 2014 .

Effect of SU-8 Passivation Layer Induced Stress on the Performance of GaSb Diode

Yang Jiang, Wenxin Wang, Hong Chen, 2018, IEEE Photonics Technology Letters.

The origin of wing tilt for uncoalesced GaN grown on maskless grooved sapphire fabricated by wet chemical etching

N. Yu, Lihua Tang, Xiujian Zhu, 2007 .

Fabrication of Patterned Sapphire Substrate by Wet Chemical Etching for Maskless Lateral Overgrowth of GaN

H. Jia, Junming Zhou, Wanyun Li, 2006 .

Luminescence study in InGaAs/AlGaAs multi-quantum-well light emitting diode with p–n junction engineering

Wenxue Huo, Minglong Zhao, Xiansheng Tang, 2020 .

High performance visible-SWIR flexible photodetector based on large-area InGaAs/InP PIN structure

Xiansheng Tang, Z. Deng, Yang Jiang, 2022, Scientific Reports.

Anomalous tunneling effect on photoluminescence of asymmetric coupled double InGaN∕GaN quantum wells

Hong Chen, H. Jia, J. Zhou, 2007 .

Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption

Yang Jiang, Hong Chen, Chunhua Du, 2014 .

Characterization of different-Al-content AlGaN/GaN heterostructures on sapphire

Liwei Guo, Hong Chen, H. Jia, 2010 .

Characterization of a-plane InN film grown on r-plane sapphire by MOCVD

Liwei Guo, B. Ge, Xiujian Zhu, 2008 .

Investigation of temperature-dependent photoluminescence in multi-quantum wells

Z. Deng, Yang Jiang, Wenxin Wang, 2015, Scientific Reports.

Demonstration of SWIR Silicon-Based Photodetection by Using Thin ITO/Au/Au Nanoparticles/n-Si Structure

Z. Deng, Yang Jiang, Wenxin Wang, 2022, Sensors.

Structural characterization of InN films grown on different buffer layers by metalorganic chemical vapor deposition

N. Yu, Xiujian Zhu, H. Jia, 2007 .

The flexible LED fabrication by transferring epitaxial film onto PET

Xiansheng Tang, Z. Deng, Yang Jiang, 2021, Optical Materials.

Characteristics of the improved a-plane GaN films grown on r-plane sapphire with two-step AlN buffer layer

Xiujian Zhu, H. Jia, J. Zhou, 2007 .

Surface Morphology Improvement of Non-Polar a-Plane GaN Using a Low-Temperature GaN Insertion Layer

Z. Deng, Yang Jiang, Wenxin Wang, 2020 .

Visualizing light-to-electricity conversion process in InGaN/GaN multi-quantum wells with a p–n junction

Yang Jiang, Wenxin Wang, H. Jia, 2018, Chinese Physics B.

Enhanced absorption in the space charge region of GaAs solar cells

Yimeng Song, Yang Jiang, Wenxin Wang, 2021, EPL (Europhysics Letters).

Fabrication of large-scale uniform submicron inverted pyramid pit arrays on silicon substrates by laser interference lithography

Sen Wang, Z. Deng, Yang Jiang, 2019, Vacuum.

Role of low temperature Al(Ga)N interlayers on the polarity and quality control of GaN epitaxy

Xinyu Liu, Yimeng Song, Z. Deng, 2022, Journal of Crystal Growth.

N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation

Yimeng Song, Z. Deng, Yang Jiang, 2022, Materials.

Lateral epitaxial overgrowth of GaN films on patterned sapphire substrates fabricated by wet chemical etching

Limin Guo, H. Jia, Hong Chen, 2006 .

Investigation of characteristics of laterally overgrown GaN on striped sapphire substrates patterned by wet chemical etching

H. Jia, Haohong Chen, L. W. Guo, 2006 .

Characterization and optimization of AlN nucleation layer for nonpolar a-plane GaN grown on r-plane sapphire substrate

Z. Deng, Yang Jiang, Wenxin Wang, 2019, Superlattices and Microstructures.

Superior Optoelectronic Performance of N-Polar GaN LED to Ga-Polar Counterpart in the “Green Gap” Range

Yang Jiang, Wenxin Wang, H. Jia, 2022, IEEE Access.

The influence of temperature of nitridation and AlN buffer layer on N-polar GaN

Yimeng Song, Yang Jiang, Wenxin Wang, 2022, Materials Science in Semiconductor Processing.

The role of AlN thickness in MOCVD growth of N-polar GaN

Yimeng Song, Yang Jiang, Wenxin Wang, 2021 .

Epitaxy N-polar GaN on vicinal Sapphire substrate by MOCVD

Yimeng Song, Yang Jiang, Wenxin Wang, 2021, Vacuum.

Characteristics of silent B1H mode in AlxGa1−xN alloys observed by Raman scattering

N. Yu, Xiujian Zhu, H. Jia, 2009 .

An AlGaN/GaN HEMT with sputter-SiN passivation for the on-state performance improvement

H. Jia, Haojun Yang, Xiaohui Wang, 2022, Micro and Nanostructures.

Reducing dislocations of Al-rich AlGaN by combining AlN buffer and AlN/Al0.8Ga0.2N superlattices

Liwei Guo, N. Yu, H. Jia, 2008 .

Characteristics of AlGaN/GaN high electron mobility transistors on metallic substrate

Wenxue Huo, Minglong Zhao, Xiansheng Tang, 2020 .

Effects of reactor pressure on GaN-based light-emitting diodes grown on a-plane sapphire substrates

H. Jia, J. Zhou, Qizhang Huang, 2004 .

Modulating emission intensity of GaN-based green light emitting diodes on c-plane sapphire

Yang Jiang, Hong Chen, Chunhua Du, 2014 .

Improvement of green InGaN-based LEDs efficiency using a novel quantum well structure*

Yang Jiang, Wenxin Wang, H. Jia, 2017 .

Direct Observation of Carrier Transportation between Localized States in InGaN Quantum Wells

Jie Zhang, Yi Wang, Yixiao Li, 2022, Crystals.

Characterization of edge dislocation density through X-ray diffraction rocking curves

Yimeng Song, Yang Jiang, Wenxin Wang, 2020 .

Realizing Single Chip White Light InGaN LED via Dual-Wavelength Multiple Quantum Wells

Yimeng Song, Yang Jiang, Wenxin Wang, 2022, Materials.

Characterization of periodicity fluctuations in InGaN/GaN MQWs by the kinematical simulation of X-ray diffraction

Yang Jiang, Wenxin Wang, H. Jia, 2019, Applied Physics Express.

Realization of high-luminous-efficiency InGaN light-emitting diodes in the “green gap” range

Yang Jiang, Wenxin Wang, H. Jia, 2015, Scientific Reports.

Recent Progress in GaN‐Based Light‐Emitting Diodes

Liwei Guo, Wenxin Wang, H. Jia, 2009 .

Dependence of leakage current on dislocations in GaN-based light-emitting diodes

Haiqiang Jia, Qizhang Huang, H. Jia, 2004 .

A novel wavelength-adjusting method in InGaN-based light-emitting diodes

Yang Jiang, Wenxin Wang, Hong Chen, 2013, Scientific Reports.

Fabrication of 4-Inch Nano Patterned Wafer with High Uniformity by Laser Interference Lithography

H. Jia, Hong Chen, Gen Yue, 2018 .

Improved thermal stability of wet-oxidized AlAs

Junming Zhou, Haiqiang Jia, Weike Wang, 2002 .

Effects of barrier growth temperature ramp-up time on the photoluminescence of InGaN∕GaN quantum wells

Hong Chen, H. Jia, J. Zhou, 2007 .

Near ultraviolet InGaN/GaN MQWs grown on maskless periodically grooved sapphire substrates fabricated by wet chemical etching

N. Yu, B. Ge, H. Jia, 2007 .

Rectifying behavior in the GaN/graded-AlxGa1−xN/GaN double heterojunction structure

Yang Jiang, Wenxin Wang, H. Jia, 2018 .

Tunable emission wavelength of InGaN/GaN multiquantum wells employing strain-accommodative structures

Hui Li, Hong Chen, Tao He, 2010, SPIE/COS Photonics Asia.

Improvement in the crystal quality of non-polar a-plane GaN directly grown on an SiO2 stripe-patterned r-plane sapphire substrate

Yang Jiang, Chunhua Du, H. Jia, 2019, CrystEngComm.

Improved crystal quality of non-polar a-plane GaN epi-layers directly grown on optimized hole-array patterned r-sapphire substrates

Yang Jiang, H. Jia, Ziguang Ma, 2019, CrystEngComm.

Control performance of a single-chip white light emitting diode by adjusting strain in InGaN underlying layer

Xuan Wang, Liwei Guo, H. Jia, 2009 .

Influence of Sb2 soaking on strained InAs0.8Sb0.2/Al0.2Ga0.8Sb multiple quantum well interfaces

Wenxin Wang, Hong Chen, H. Jia, 2021, AIP Advances.

Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD

Yang Jiang, Wenxin Wang, Hong Chen, 2012, Nanoscale Research Letters.

Effect of growth temperature of initial AlN buffer on the structural and optical properties of Al-rich AlGaN

Liwei Guo, N. Yu, H. Jia, 2007 .

Reduction in crystalline quality anisotropy for non-polar a-plane GaN directly grown on titanium patterned sapphire substrate

Yang Jiang, Wenxin Wang, Chunhua Du, 2018, Applied Physics Express.

An Ultralow Turn-On GaN Lateral Field-Effect Rectifier With Schottky-MIS Cascode Anode

Bo Zhang, Wanjun Chen, Fangzhou Wang, 2022, IEEE Transactions on Electron Devices.

Improvement on InGaN‐based light emitting diodes using p‐GaN layer grown at low temperature in full N2 environment

Yang Jiang, Hong Chen, H. Jia, 2014 .

Visualizing carrier transitions between localization states in a InGaN yellow–green light-emitting-diode structure

Yang Jiang, Wenxin Wang, Hong Chen, 2019, Journal of Applied Physics.

p -n Junction Rectifying Characteristics of Purely n -Type GaN-Based Structures

W. X. Wang, H. Jia, P. Zuo, 2017 .

Numerical and Experimental Study on the Device Geometry Dependence of Performance of Heterjunction Phototransistors

Xuan Li, Wenxin Wang, Hong Chen, 2019, Chinese Physics Letters.

Indium segregation measured in InGaN quantum well layer

W. Lu, Wei Li, Yang Jiang, 2014, Scientific Reports.

Infrared detector based on interband transition of semiconductor quantum well within p-n junction

Jie Liu, Lu Wang, Wenxin Wang, 2017, Security + Defence.

Enhancement of light extraction efficiency of AlGaInP-based light emitting diodes by silicon oxide hemisphere array

Wenxue Huo, Minglong Zhao, Xiansheng Tang, 2021 .

Analysis of Photo-Generated Carrier Escape in Multiple Quantum Wells

Xiansheng Tang, Chunhua Du, H. Jia, 2023, Crystals.

The impact of nanoporous SiNx interlayer growth position on high-quality GaN epitaxial films

Yang Jiang, H. Jia, Ziguang Ma, 2011 .

Research on photo-generated carriers escape in PIN and NIN structures with quantum wells

Xiansheng Tang, Yang Jiang, Wenxin Wang, 2020, Applied Physics Express.

Direct observation of the carrier transport process in InGaN quantum wells with a pn-junction

Yang Jiang, Wenxin Wang, Hong Chen, 2016 .

Carrier transport in III-V quantum-dot structures for solar cells or photodetectors

Yang Jiang, Wenxin Wang, Hong Chen, 2016 .

A novel method to reduce the period limitation in laser interference lithography

Yang Jiang, Wenxin Wang, H. Jia, 2015 .

A novel method to reduce the period limitation in laser interference lithography

Yang Jiang, Wenxin Wang, H. Jia, 2015, Optical and quantum electronics.

Influence of Si doping on the structural and optical properties of InGaN epilayers

S. Su, Yang Jiang, H. Jia, 2013 .

The influence of pressure on the growth of a-plane GaN on r-plane sapphire substrates by MOCVD

T. He, Yang Jiang, Wenxin Wang, 2011 .

Absorption Enhancement of Silicon Solar Cell in a Positive-Intrinsic-Negative Junction

Sen Wang, Yang Jiang, Wenxin Wang, 2019, Chinese Physics Letters.

The influence of excessive H2 during barrier growth on InGaN light-emitting diodes

Yimeng Song, Yang Jiang, Wenxin Wang, 2020, Materials Research Express.

Hybrid nano-scale Au with ITO structure for a high-performance near-infrared silicon-based photodetector with ultralow dark current

Q. Meng, Yang Jiang, Wenxin Wang, 2020 .

Fabrication, structural and optical properties of a virtual GeSi template by Ge filling the porous Si prepared by EC etching

Sen Wang, Yang Jiang, Wenxin Wang, 2020, Japanese Journal of Applied Physics.

Efficiency enhancement of InGaN/GaN multiple quantum wells with graphene layer

Yang Jiang, Wenxin Wang, H. Jia, 2015 .

Fabrication of large-area nano-scale patterned sapphire substrate with laser interference lithography

H. Jia, Hong Chen, Mingjun Xuan, 2014 .

Stress Control in GaN Grown on 6H-SiC by Metalorganic Chemical Vapor Deposition

Yang Jiang, Hong Chen, H. Jia, 2011 .

Characteristics of GaN grown on 6H-SiC with different AlN buffers

Jia Haiqiang, H. Jia, P. Xu, 2010 .