Qingzhu Zhang

发表

Influence of Rapid Thermal Annealing on Ge-Si Interdiffusion in Epitaxial Multilayer Ge0.3Si0.7/Si Superlattices with Various GeSi Thicknesses

Guilei Wang, H. Yin, Jiang Yan, 2018 .

Physical Insights on Quantum Confinement and Carrier Mobility in Si, Si0.45Ge0.55, Ge Gate-All-Around NSFET for 5 nm Technology Node

H. Yin, Wenwu Wang, Jiahan Yu, 2018, IEEE Journal of the Electron Devices Society.

FinFET With Improved Subthreshold Swing and Drain Current Using 3-nm Ferroelectric Hf0.5Zr0.5O2

Tianchun Ye, H. Yin, Huilong Zhu, 2019, IEEE Electron Device Letters.

A novel three-layer graded SiGe strain relaxed buffer for the high crystal quality and strained Si0.5Ge0.5 layer epitaxial grown

A. Du, Guilei Wang, Jun Luo, 2019, Journal of Materials Science: Materials in Electronics.

Study on technology of ultrasonic vibration aided electrical discharge machining in gas

S. F. Ren, Qingzhu Zhang, X. Ai, 2004 .

Comparative Investigation of Flat-Band Voltage Modulation by Nitrogen Plasma Treatment for Advanced HKMG Technology

Jianfeng Gao, H. Yin, Qingzhu Zhang, 2018 .

Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors

Jianfeng Gao, A. Du, Guilei Wang, 2020, Nanomaterials.

Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs

Tianchun Ye, Guilei Wang, Jun Luo, 2021, Nanomaterials.

Design and Simulation of Steep-Slope Silicon Cold Source FETs With Effective Carrier Distribution Model

Tianchun Ye, H. Yin, Huilong Zhu, 2020, IEEE Transactions on Electron Devices.

Biocompatible Hydrogel Modified Silicon Nanowire Field Transistor for Highly Sensitive pH Detection

F. Wei, Qingzhu Zhang, Qianhui Wei, 2022, Journal of Physics: Conference Series.

Fabrication of Low Cost and Low Temperature Poly-Silicon Nanowire Sensor Arrays for Monolithic Three-Dimensional Integrated Circuits Applications

H. Yin, Wenwu Wang, H. Tu, 2020, Nanomaterials.

A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm

Jianfeng Gao, A. Du, Guilei Wang, 2020, Materials.

Si Nanowire Biosensors Using a FinFET Fabrication Process for Real Time Monitoring Cellular Ion Actitivies

Q. Han, R. Zhao, Junfeng Li, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

Using Intrinsic Intracrystalline Tunnels for Near‐Infrared and Visible‐Light Selective Electrochromic Modulation

Zhigang Chen, Fengxia Geng, Mei Yang, 2017 .

Bottom Dielectric Isolation to Suppress Sub-Fin Parasitic Channel of Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices

Weihai Bu, Lei Cao, H. Yin, 2022, 2022 China Semiconductor Technology International Conference (CSTIC).

Impact of Electron trapping on Energy Distribution Characterization of NBTI-Related Defects for Si p-FinFETs

Z. Ji, A. Du, H. Yin, 2020, 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).

Selective wet etching in fabricating SiGe nanowires with TMAH solution for gate-all-around MOSFETs

A. Du, Jun Luo, Wenwu Wang, 2020, Journal of Materials Science: Materials in Electronics.

Design of flexible multi‐level topography for enhancing mechanical property

Lei Wang, Jing Liu, Shile Feng, 2020 .

Coadsorption of oxygen with a submonolayer of Fe on GaAs(100): a HREELS investigation

Qingzhu Zhang, Zhangda Lin, Nan Li, 1992 .

Improved Operation Characteristics for Nonvolatile Charge-Trapping Memory Capacitors with High-κ Dielectrics and SiGe Epitaxial Substrates*

Guilei Wang, H. Yin, Qingzhu Zhang, 2017 .

A Gd-doped HfO2 single film for a charge trapping memory device with a large memory window under a low voltage

H. Yin, F. Wei, Qingzhu Zhang, 2020, RSC advances.

Improved Subthreshold Characteristics by Back-Gate Coupling on Ferroelectric ETSOI FETs

H. Yin, Wenwu Wang, Qingzhu Zhang, 2022, Nanoscale research letters.

Quasi-Volatile MoS2 Barristor Memory for 1T Compact Neuron by Correlative Charges Trapping and Schottky Barrier Modulation.

H. Yin, Qingzhu Zhang, Zhaohao Zhang, 2022, ACS applied materials & interfaces.

Morphology Evolution of Monolayer MoS 2 Flakes with Seed Promotor Grown by CVD

F. Wei, Hongbin Zhao, Qingzhu Zhang, 2017 .

Effects of a carbon implant on thermal stability of Ni0.95(Pt0.05)Si

Jiang Yan, Qingzhu Zhang, Zhaoyun Tang, 2015 .

Miniaturization of CMOS

Xiaobin He, Yong Du, Junjie Li, 2019, Micromachines.

Near-ideal subthreshold swing MoS2 back-gate transistors with an optimized ultrathin HfO2 dielectric layer

Huaxiang Yin, Zhenhua Wu, Qingzhu Zhang, 2019, Nanotechnology.

Scanning tunneling microscopy study of superlattice domain boundaries on graphite surface

Q. Xue, J. Jia, Qingzhu Zhang, 2003 .

Ultradense One-Memristor Ternary-Content-Addressable Memory Based on Ferroelectric Diodes

Tianchun Ye, H. Yin, Wenwu Wang, 2023, IEEE Electron Device Letters.

Hybrid 1T e-DRAM and e-NVM Realized in One 10 nm node Ferro FinFET device with Charge Trapping and Domain Switching Effects

Qi Liu, S. Long, Ming Liu, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

Acrylamide Hydrogel-Modified Silicon Nanowire Field-Effect Transistors for pH Sensing

Jing Zhang, H. Tu, F. Wei, 2022, Nanomaterials.

Effectiveness of Repairing Hot Carrier Degradation in Si p-FinFETs Using Gate Induced Drain Leakage

A. Du, Junfeng Li, H. Yin, 2023, IEEE Electron Device Letters.

Process variation dependence of total ionizing dose effects in bulk nFinFETs

Bo Li, Ling Yang, Haibin Wang, 2018, Microelectron. Reliab..

4-Levels Vertically Stacked SiGe Channel Nanowires Gate-All-Around Transistor with Novel Channel Releasing and Source and Drain Silicide Process

H. Yin, Wenwu Wang, Qingzhu Zhang, 2022, Nanomaterials.

Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics

Jun Luo, Wenwu Wang, Junjie Li, 2021, Nanomaterials.

Key Process Technologies for Stacked Double Si0.7Ge0.3 Channel Nanowires Fabrication

Guilei Wang, H. Yin, Wenwu Wang, 2020 .

Investigation on the formation technique of SiGe Fin for the high mobility channel FinFET device

A. Du, Guilei Wang, Jun Luo, 2019, Journal of Materials Science: Materials in Electronics.

Influences of Encapsulated HfO2 Film on the Performance of Graphene Filed Effect Transistors

Qingzhu Zhang, Zhaohao Zhang, Qianhui Wei, 2020, Journal of Physics: Conference Series.

Novel 10-nm Gate Length MoS2 Transistor Fabricated on Si Fin Substrate

Tianchun Ye, Junfeng Li, H. Yin, 2019, IEEE Journal of the Electron Devices Society.

Two methods of tuning threshold voltage of bulk FinFETs with replacement high-k metal-gate stacks

Tianchun Ye, Jun Luo, Changliang Qin, 2017 .

O2 plasma treated biosensor for enhancing detection sensitivity of sulfadiazine in a high-к HfO2 coated silicon nanowire array

H. Yin, Jiang Yan, Wenwu Wang, 2020 .

Fabrication and Characterization of p-Channel Charge Trapping Type FOI-FinFET Memory with MAHAS Structure

Jie Gu, Huaxiang Yin, Changliang Qin, 2017 .

Process optimization of the Si0.7Ge0.3 Fin Formation for the STI first scheme

A. Du, Guilei Wang, Junfeng Li, 2019, Semiconductor Science and Technology.

Study of Selective Dry Etching Effects of 15-Cycle Si0.7Ge0.3/Si Multilayer Structure in Gate-All-Around Transistor Process

R. Chen, Jianfeng Gao, Guilei Wang, 2023, Nanomaterials.

FOI FinFET with ultra-low parasitic resistance enabled by fully metallic source and drain formation on isolated bulk-fin

Tianchun Ye, Junjie Li, Chao Zhao, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Stacked HZO/α-In2Se3 Ferroelectric Dielectric/Semiconductor FET With Ultrahigh Speed and Large Memory Window

H. Yin, Qingzhu Zhang, Zhaohao Zhang, 2023, IEEE Transactions on Electron Devices.

Influence of Parasitic Capacitance and Resistance on Performance of 6T-SRAM for Advanced CMOS Circuits Design

Lei Cao, H. Yin, Qingzhu Zhang, 2022, China Semiconductor Technology International Conference.

Layout Optimization of Complementary FET 6T-SRAM Cell Based on a Universal Methodology Using Sensitivity With Respect to Parasitic - and -Values

Yu Cao, Weihai Bu, Lei Cao, 2022, IEEE Transactions on Electron Devices.

Investigation of Novel Hybrid Channel Complementary FET Scaling Beyond 3-nm Node From Device to Circuit

Yu Cao, Lei Cao, H. Yin, 2022, IEEE Transactions on Electron Devices.

Investigation of Fabricated CMOS FishboneFETs and TreeFETs With Strained SiGe Nano-Fins on Bulk-Si Substrate

Jianfeng Gao, Xiaobin He, Lei Cao, 2023, IEEE Electron Device Letters.

Improving Driving Current with High-Efficiency Landing Pads Technique for Reduced Parasitic Resistance in Gate-All-Around Si Nanosheet Device

Guilei Wang, Lei Cao, Jinbiao Liu, 2022, ECS Journal of Solid State Science and Technology.

Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices

Guilei Wang, Xiaobin He, Jun Luo, 2021, Nanomaterials.

Novel Channel-First Fishbone FETs With Symmetrical Threshold Voltages and Balanced Driving Currents Using Single Work Function Metal Process

Weihai Bu, Lei Cao, H. Yin, 2022, IEEE Transactions on Electron Devices.

Influence of the hard masks profiles on formation of nanometer Si scalloped fins arrays

H. Yin, Jiang Yan, H. Tu, 2018, Microelectronic Engineering.

Understanding Frequency Dependence of Trap Generation Under AC Negative Bias Temperature Instability Stress in Si p-FinFETs

E. Simoen, Z. Ji, Jun Luo, 2020, IEEE Electron Device Letters.

Comparison of Total Ionizing Dose Effects in SOI FinFETs Between Room and High Temperature

H. Yin, Qingzhu Zhang, Jinxing Cheng, 2022, IEEE Transactions on Nuclear Science.

Total Ionizing Dose Response and Annealing Behavior of Bulk nFinFETs With ON-State Bias Irradiation

Qi Guo, Zhengsheng Han, Jiajun Luo, 2018, IEEE Transactions on Nuclear Science.

Investigation on negative capacitance FinEFT beyond 7 nm node from device to circuit

Qiang Huo, Huilong Zhu, Huaxiang Yin, 2021, Microelectron. J..

Narrow Sub-Fin Technique for Suppressing Parasitic-Channel Effect in Stacked Nanosheet Transistors

Lei Cao, Jun Luo, H. Yin, 2022, IEEE Journal of the Electron Devices Society.

High crystal quality strained Si0.5Ge0.5 layer with a thickness of up to 50 nm grown on the three-layer SiGe strain relaxed buffer

Guilei Wang, Jun Luo, Junfeng Li, 2019, Materials Science in Semiconductor Processing.

Leakage Reduction of GAA Stacked SI Nanosheet CMOS Transistors and 6T-SRAM Cell Via Spacer Bottom Footing Optimization

Lei Cao, H. Yin, Qingzhu Zhang, 2023, China Semiconductor Technology International Conference.

Record 7(N)+7(P) Multiple VTs Demonstration on GAA Si Nanosheet n/pFETs using WFM-Less Direct Interfacial La/Al-Dipole Technique

Lei Cao, Junfeng Li, H. Yin, 2022, 2022 International Electron Devices Meeting (IEDM).

Geometric Variability Aware Quantum Potential based Quasi-ballistic Compact Model for Stacked 6 nm-Thick Silicon Nanosheet GAA-FETs

Ming Liu, Ling Li, H. Yin, 2021, 2021 IEEE International Electron Devices Meeting (IEDM).

Optimization of zero-level interlayer dielectric materials for gate-all-around silicon nanowire channel fabrication in a replacement metal gate process

Guilei Wang, H. Yin, Jiang Yan, 2021 .

Physical Insights of Si-Core-SiGe-Shell Gate-All-Around Nanosheet pFET for 3 nm Technology Node

A. Du, Lei Cao, H. Yin, 2023, IEEE Transactions on Electron Devices.

An Ultra-Dense One-Transistor Ternary-Content-Addressable Memory Array Based on Non-Volatile and Ambipolar Fin Field-Effect Transistors

Tianchun Ye, H. Yin, Qingzhu Zhang, 2023, IEEE Transactions on Electron Devices.

High-performance multilayer WSe2 p-type field effect transistors with Pd contacts for circuit applications

H. Yin, Qingzhu Zhang, Zhenhua Wu, 2021, Journal of Materials Science: Materials in Electronics.

Large memory window with low operating voltages using Hf 1.5 Gd 2 O 6 charge trapping layer and thin MoS 2 channel

H. Yin, F. Wei, Junjie Li, 2021, Electronics Letters.

Improvement of Operation Characteristics for MONOS Charge Trapping Flash Memory with SiGe Buried Channel

Guilei Wang, H. Yin, Qingzhu Zhang, 2018 .

Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications

Qingzhu Zhang, Zhaohao Zhang, Gaobo Xu, 2023, Science China Information Sciences.

Ultrasensitive Silicon Nanowire Biosensor with Modulated Threshold Voltages and Ultra-Small Diameter for Early Kidney Failure Biomarker Cystatin C

H. Yin, Xufang Zhang, Qingzhu Zhang, 2023, Biosensors.