Zhaohao Zhang

发表

Influence of Rapid Thermal Annealing on Ge-Si Interdiffusion in Epitaxial Multilayer Ge0.3Si0.7/Si Superlattices with Various GeSi Thicknesses

Guilei Wang, H. Yin, Jiang Yan, 2018 .

FinFET With Improved Subthreshold Swing and Drain Current Using 3-nm Ferroelectric Hf0.5Zr0.5O2

Tianchun Ye, H. Yin, Huilong Zhu, 2019, IEEE Electron Device Letters.

Quantum Dot With a Diamond-Shaped Channel MOSFET on a Bulk Si Substrate

Tianchun Ye, Junfeng Li, H. Yin, 2021, IEEE Transactions on Electron Devices.

Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs

Tianchun Ye, Guilei Wang, Jun Luo, 2021, Nanomaterials.

Fabrication of Low Cost and Low Temperature Poly-Silicon Nanowire Sensor Arrays for Monolithic Three-Dimensional Integrated Circuits Applications

H. Yin, Wenwu Wang, H. Tu, 2020, Nanomaterials.

Si Nanowire Biosensors Using a FinFET Fabrication Process for Real Time Monitoring Cellular Ion Actitivies

Q. Han, R. Zhao, Junfeng Li, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

Improved Ferroelectricity and Endurance of Hf0.5Zr0.5O2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

J. Bi, Jinbiao Liu, H. Yin, 2022, Advanced Materials Interfaces.

Impact of Electron trapping on Energy Distribution Characterization of NBTI-Related Defects for Si p-FinFETs

Z. Ji, A. Du, H. Yin, 2020, 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).

A Gd-doped HfO2 single film for a charge trapping memory device with a large memory window under a low voltage

H. Yin, F. Wei, Qingzhu Zhang, 2020, RSC advances.

Improved Subthreshold Characteristics by Back-Gate Coupling on Ferroelectric ETSOI FETs

H. Yin, Wenwu Wang, Qingzhu Zhang, 2022, Nanoscale research letters.

Quasi-Volatile MoS2 Barristor Memory for 1T Compact Neuron by Correlative Charges Trapping and Schottky Barrier Modulation.

H. Yin, Qingzhu Zhang, Zhaohao Zhang, 2022, ACS applied materials & interfaces.

Neogene Land Mammal Stages/Ages of China

Zhaohao Zhang, Z. Qiu, T. Deng, 2013 .

Near-ideal subthreshold swing MoS2 back-gate transistors with an optimized ultrathin HfO2 dielectric layer

Huaxiang Yin, Zhenhua Wu, Qingzhu Zhang, 2019, Nanotechnology.

Ultradense One-Memristor Ternary-Content-Addressable Memory Based on Ferroelectric Diodes

Tianchun Ye, H. Yin, Wenwu Wang, 2023, IEEE Electron Device Letters.

Evolution of the Interfacial Layer and Its Impact on Electric-Field-Cycling Behaviors in Ferroelectric Hf1-xZrxO2.

Y. Liu, Fei Liu, G. Han, 2022, ACS applied materials & interfaces.

Endurance Characteristics of Negative Capacitance FinFETs With Negligible Hysteresis

Tianchun Ye, H. Yin, Wenwu Wang, 2021, IEEE Electron Device Letters.

Influences of Encapsulated HfO2 Film on the Performance of Graphene Filed Effect Transistors

Qingzhu Zhang, Zhaohao Zhang, Qianhui Wei, 2020, Journal of Physics: Conference Series.

Novel 10-nm Gate Length MoS2 Transistor Fabricated on Si Fin Substrate

Tianchun Ye, Junfeng Li, H. Yin, 2019, IEEE Journal of the Electron Devices Society.

O2 plasma treated biosensor for enhancing detection sensitivity of sulfadiazine in a high-к HfO2 coated silicon nanowire array

H. Yin, Jiang Yan, Wenwu Wang, 2020 .

Stacked HZO/α-In2Se3 Ferroelectric Dielectric/Semiconductor FET With Ultrahigh Speed and Large Memory Window

H. Yin, Qingzhu Zhang, Zhaohao Zhang, 2023, IEEE Transactions on Electron Devices.

Layout Optimization of Complementary FET 6T-SRAM Cell Based on a Universal Methodology Using Sensitivity With Respect to Parasitic - and -Values

Yu Cao, Weihai Bu, Lei Cao, 2022, IEEE Transactions on Electron Devices.

Improving Driving Current with High-Efficiency Landing Pads Technique for Reduced Parasitic Resistance in Gate-All-Around Si Nanosheet Device

Guilei Wang, Lei Cao, Jinbiao Liu, 2022, ECS Journal of Solid State Science and Technology.

Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices

Guilei Wang, Xiaobin He, Jun Luo, 2021, Nanomaterials.

Influence of the hard masks profiles on formation of nanometer Si scalloped fins arrays

H. Yin, Jiang Yan, H. Tu, 2018, Microelectronic Engineering.

Understanding Frequency Dependence of Trap Generation Under AC Negative Bias Temperature Instability Stress in Si p-FinFETs

E. Simoen, Z. Ji, Jun Luo, 2020, IEEE Electron Device Letters.

Narrow Sub-Fin Technique for Suppressing Parasitic-Channel Effect in Stacked Nanosheet Transistors

Lei Cao, Jun Luo, H. Yin, 2022, IEEE Journal of the Electron Devices Society.

An Ultra-Dense One-Transistor Ternary-Content-Addressable Memory Array Based on Non-Volatile and Ambipolar Fin Field-Effect Transistors

Tianchun Ye, H. Yin, Qingzhu Zhang, 2023, IEEE Transactions on Electron Devices.

Large memory window with low operating voltages using Hf 1.5 Gd 2 O 6 charge trapping layer and thin MoS 2 channel

H. Yin, F. Wei, Junjie Li, 2021, Electronics Letters.

Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications

Qingzhu Zhang, Zhaohao Zhang, Gaobo Xu, 2023, Science China Information Sciences.

Three-Dimensional Graphene Field-Effect Transistors as High-Performance Photodetectors.

Hao Li, Zewen Liu, Tao Deng, 2019, Nano letters.

Ultrasensitive Silicon Nanowire Biosensor with Modulated Threshold Voltages and Ultra-Small Diameter for Early Kidney Failure Biomarker Cystatin C

H. Yin, Xufang Zhang, Qingzhu Zhang, 2023, Biosensors.