J. Tolle

发表

CVD growth and characterization of SixGei-x-ySny alloys for high efficiency multi-junction solar cells

B. Alharthi, A. Mosleh, J. Margetis, 2017, 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).

CVD growth and characterization of SixGe1−x−ySny alloys for high efficiency multi-junction solar cells

B. Alharthi, A. Mosleh, J. Margetis, 2016, 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC).

Advanced Si-based Semiconductors for Energy and Photonic Applications

J. Tolle, J. Kouvetakis, J. Menéndez, 2009 .

Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection.

Wei Du, Seyed Amir Ghetmiri, Aboozar Mosleh, 2014, Optics express.

Abrupt SiGe-to-Si interface: influence of chemical vapor deposition processes and characterization by different metrology techniques

V. D'costa, J. Tolle, D. Kohen, 2018, Semiconductor Science and Technology.

Perfectly tetragonal, tensile-strained Ge on Ge1−ySny buffered Si(100)

V. D'costa, A. Chizmeshya, J. Tolle, 2007 .

An optically pumped 2.5 μm GeSn laser on Si operating at 110 K

Wei Du, Richard A. Soref, Wei Dou, 2016 .

Study of GeSn Mid-infrared Photodetectors for High Frequency Applications

Wei Du, David J. Thomson, Goran Z. Mashanovich, 2019, Front. Mater..

Low-temperature pre-epitaxy surface cleaning of Si and SiGe

Roger Loo, Andriy Hikavyy, Sandeep Mehta, 2015 .

LASERS, OPTICS, AND OPTOELECTRONICS 2865 Single-mode solid-state single photon source based on isolated quantum dots in pillar microcavities

Costas Fotakis, Eric Moreau, C. Kalpouzos, 2001 .

All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K

R. Soref, Jifeng Liu, Q. Guo, 2018, Applied Physics Letters.

Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K

Wei Du, Richard A. Soref, Wei Dou, 2017 .

Process impurity identification in MSI-78

J. Tolle, E. Tews, R. Miller, 1999 .

Novel synthetic pathways to wide bandgap semiconductors in the Si?C?Al?N system

David J. Smith, P. Crozier, A. Chizmeshya, 2002 .

Direct bandgap type-I GeSn/GeSn quantum well on a GeSn- and Ge- buffered Si substrate

R. Soref, Jifeng Liu, J. Margetis, 2018 .

Study of direct bandgap type-I GeSn/GeSn double quantum well with improved carrier confinement

R. Soref, Jifeng Liu, J. Margetis, 2018, Nanotechnology.

Investigation of optical transitions in a SiGeSn/GeSn/SiGeSn single quantum well structure

R. Soref, Jifeng Liu, J. Margetis, 2017 .

As doping of Si–Ge–Sn epitaxial semiconductor materials on a commercial CVD reactor

J. Margetis, J. Tolle, Nupur Bhargava, 2017 .

Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics.

R. Soref, Jifeng Liu, A. Mosleh, 2017, Optics letters.

Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications

R. Soref, A. Mosleh, J. Margetis, 2016 .

Temperature-dependent characterization of G0.94Sn0.06 light-emitting diode grown on Si via CVD

R. Soref, A. Mosleh, J. Margetis, 2015, 2015 Conference on Lasers and Electro-Optics (CLEO).

Compliant tin-based buffers for the growth of defect-free strained heterostructures on silicon

John Tolle, John Kouvetakis, Jose Menendez, 2006 .

Study of material and optical properties of Si x Ge 1-x-y Sn y alloys for Si-based optoelectronic device applications

B. Alharthi, A. Mosleh, J. Margetis, 2017 .

Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications

R. Soref, J. Margetis, H. Tran, 2019, ACS Photonics.

Infrared spectral response of a GeSn p-i-n photodiode on Si

R. Soref, A. Mosleh, J. Margetis, 2014, 11th International Conference on Group IV Photonics (GFP).

Photovoltage spectroscopy of direct and indirect bandgaps of strained Ge1-Sn thin films on a Ge/Si(001) substrate

G. Salamo, J. Margetis, H. Tran, 2019, Acta Materialia.

Simple chemical routes to diamond-cubic germanium-tin alloys

M. McCartney, J. Tolle, J. Kouvetakis, 2001 .

Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration

A. Hikavyy, E. Rosseel, B. Douhard, 2019, ECS Journal of Solid State Science and Technology.

Epitaxy-Driven Synthesis of Elemental Ge/Si Strain-Engineered Materials and Device Structures via Designer Molecular Chemistry

V. D'costa, A. Chizmeshya, J. Tolle, 2007 .

Enhanced B doping in CVD-grown GeSn:B using B δ-doping layers

R. Loo, W. Vandervorst, J. Margetis, 2018 .

Strain suppressed Sn incorporation in GeSn epitaxially grown on Ge/Si(001) substrate

G. Salamo, J. Margetis, J. Tolle, 2020, Applied Physics Letters.

Quantifying the Risk of Shallow Hazards Using a Principled Statistical Workflow

Yu Zhang, Jay Chen, Huihui Yang, 2020 .

Synthesis of Si-Ge nanoscale structures via deposition of single-source (GeH3)4−nSiHn hydrides

V. D'costa, P. Crozier, J. Tolle, 2005 .

Morphological and optical properties of Si nanostructures imbedded in SiO2 and Si3N4 films grown by single source chemical vapor deposition

C. Poweleit, T. Alford, David J. Smith, 2002 .

Chemistry and kinetics governing hydride/chloride chemical vapor deposition of epitaxial Ge1−xSnx

J. Margetis, J. Tolle, Shui-Qing Yu, 2019, Journal of Vacuum Science & Technology A.

High performance Ge0.89Sn0.11photodiodes for low-cost shortwave infrared imaging

R. Soref, J. Margetis, H. Tran, 2018, Journal of Applied Physics.

Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics

Wei Du, Richard A. Soref, Hameed A. Naseem, 2016 .

Electrically injected GeSn lasers with peak wavelength up to 2.7 micrometer at 90 K

R. Soref, Jifeng Liu, G. Salamo, 2020, 2009.12229.

Development of SiGeSn Technique Towards Integrated Mid-Infrared Photonics Applications

R. Soref, A. Mosleh, J. Margetis, 2018, Scalable Uncertainty Management.

Si-based GeSn lasers with wavelength coverage of 2 to 3 {\mu}m and operating temperatures up to 180 K

R. Soref, Jifeng Liu, A. Mosleh, 2017, 1708.05927.

GeSn-based light sources and photoconductors towards integrated photonics for the mid-infrared

R. Soref, J. Margetis, S. Al-Kabi, 2017, 2017 IEEE Photonics Society Summer Topical Meeting Series (SUM).

Growth and Characterization of Epitaxial Ge1-XSnx Alloys and Heterostructures Using a Commercial CVD System

Wei Du, Richard A. Soref, Hameed A. Naseem, 2014 .

Study of SiGeSn/GeSn single quantum well toward high-performance all-group-IV optoelectronics

B. Alharthi, J. Margetis, W. Du, 2020, Journal of Applied Physics.

Low temperature epitaxial growth of Ge:B and Ge0.99Sn0.01:B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no need for any post-epi activation treatment

A. Hikavyy, R. Loo, L. Witters, 2019, Japanese Journal of Applied Physics.

Epitaxial GeSn: impact of process conditions on material quality

R. Loo, D. Buca, J. Margetis, 2018, Semiconductor Science and Technology.

Strain engineering in epitaxial Ge1−xSnx: a path towards low-defect and high Sn-content layers

J. Margetis, W. Du, J. Tolle, 2017 .

Fundamentals of Ge1−xSnx and SiyGe1−x-ySnx RPCVD epitaxy

R. Loo, A. Mosleh, J. Margetis, 2017 .

Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H 2 and N 2 carrier gas

A. Mosleh, J. Margetis, S. Al-Kabi, 2017 .

Optical study of Ge 0.95 Sn 0.05 /Ge 0.9 Sn 0.1 /Ge 0.95 Sn 0.05 quantum well towards group-IV based light source on Si

R. Soref, A. Mosleh, J. Margetis, 2016, CLEO 2016.

Systematic study of Si-based Ge/Ge0.9Sn0.1/Ge photodiodes with 2.6 μm detector cutoff

R. Soref, J. Margetis, H. Tran, 2016, 2016 Conference on Lasers and Electro-Optics (CLEO).

Optical study of Ge0.95Sn0.05/Ge0.9Sn0.1/Ge0.95Sn0.05 quantum well towards group-IV based light source on Si

R. Soref, A. Mosleh, J. Margetis, 2016, 2016 Conference on Lasers and Electro-Optics (CLEO).

Si-based GeSn edge-emitting LEDs with Sn compositions up to 8%

R. Soref, A. Mosleh, J. Margetis, 2015, Scalable Uncertainty Management.

Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates

Wei Du, Richard A. Soref, Hameed A. Naseem, 2014 .

Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys

G. Salamo, J. Margetis, J. Tolle, 2021, Crystals.

Study of SiGeSn/GeSn/SiGeSn quantum well towards all group-IV-optoelectronics

R. Soref, Jifeng Liu, A. Mosleh, 2017, 2017 Conference on Lasers and Electro-Optics (CLEO).

Intoxication of cells from different-aged embryos by diphtheria toxin

J. Tolle, A. Taylor, W. Iglewski, 1979, Infection and immunity.

Molecular approaches to p- and n-nanoscale doping of Ge1−ySny semiconductors: Structural, electrical and transport properties

V. D'costa, A. Chizmeshya, J. Tolle, 2009 .

Effect of nitridation on the growth of GaN on ZrB2(0001)∕Si(111) by molecular-beam epitaxy

J. Tolle, J. Kouvetakis, Zhi Wang, 2006 .

Ether-like Si-Ge hydrides for applications in synthesis of nanostructured semiconductors and dielectrics.

V. D'costa, A. Chizmeshya, J. Tolle, 2009, Dalton transactions.

Optically pumped lasing at 3 μm from compositionally graded GeSn with tin up to 22.3.

R. Soref, Jifeng Liu, J. Margetis, 2018, Optics letters.

Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth

A. Mosleh, J. Margetis, S. Al-Kabi, 2018, Scientific Reports.

Structural and Optical Characteristics of GeSn Quantum Wells for Silicon-Based Mid-Infrared Optoelectronic Applications

B. Alharthi, A. Mosleh, J. Margetis, 2016, Journal of Electronic Materials.

Strain Relaxation and Material Quality Improvement of Compressively Strained GeSn Epitaxial Films through a Cyclic Rapid Thermal Annealing Process

R. Soref, A. Mosleh, J. Margetis, 2014, 2014 IEEE Photonics Society Summer Topical Meeting Series.

Elastic properties of nanocrystalline zirconium–silicon–boron thin films

B. Wilkens, David J. Smith, J. Tolle, 2001 .

Development of SiGeSn Technique towards Integrated Mid-Infrared Photonics Applications

R. Soref, A. Mosleh, J. Margetis, 2019, 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS).

WA2.3 - Development of GeSn Emitters and Detectors towards Integrated Mid-Infrared Photonics Applications (Invited)

A. Mosleh, J. Margetis, S. Ghetmiri, 2019, 2019 IEEE Photonics Society Summer Topical Meeting Series (SUM).

Optically pumped Si-based edge-emitting GeSn laser

R. Soref, Jifeng Liu, A. Mosleh, 2017, Conference on Lasers and Electro-Optics.

(Invited) Development of SiGeSn Technique Towards Mid-Infrared Devices in Silicon Photonics

Wei Du, Richard A. Soref, Hameed A. Naseem, 2016 .

Enhanced responsivity by integration of interdigitated electrodes on Ge0.93Sn0.07 infrared photodetectors

R. Soref, A. Mosleh, J. Margetis, 2014, 2014 IEEE Photonics Conference.

Temperature Dependent Spectral Response and Responsivity of GeSn Photoconductor on Si

R. Soref, A. Mosleh, J. Margetis, 2014, 2014 IEEE Photonics Society Summer Topical Meeting Series.

Growth of SiCAlN on Si(111) via a crystalline oxide interface

P. Crozier, A. Chizmeshya, J. Tolle, 2002 .

Synthesis of 8-L-tryptophan-oxytocin and determination of one of its conformational parameters.

M. Bednarek, J. Tolle, P. Schiller, 2009, International journal of peptide and protein research.

Active esters of 9-fluorenylmethyloxycarbonyl amino acids and their application in the stepwise lengthening of a peptide chain

Jean Martínez, J. Tolle, M. Bodanszky, 1980 .

SIDE REACTIONS IN PEPTIDE SYNTHESIS. 12. HYDROGENOLYSIS OF THE 9-FLUORENYLMETHYLOXYCARBONYL GROUP

Jean Martínez, J. Tolle, M. Bodanszky, 1979 .

Practical Materials Chemistry Approaches for Tuning Optical and Structural Properties of Group IV Semiconductors and Prototype Photonic Devices

A. Chizmeshya, J. Tolle, J. Kouvetakis, 2010, IEEE Photonics Journal.

Synthesis and fundamental studies of (H3Ge)xSiH4-x molecules: precursors to semiconductor hetero- and nanostructures on Si.

D. Klewer, A. Chizmeshya, J. Tolle, 2005, Journal of the American Chemical Society.

Side reactions in peptide synthesis. VI. A reexamination of the benzyl group in the protection of the side chains of tyrosine and aspartic acid.

J. Tolle, M. Bodanszky, S. Deshmane, 2009, International journal of peptide and protein research.

Agglomerative crystallization of ABT-510 in a partially miscible solvent system.

Shekhar Viswanath, J. Tolle, A. Sheikh, 2008, Journal of pharmaceutical sciences.

Surface and interface studies of GaN epitaxy on Si(111) via ZrB2 buffer layers

A. Chizmeshya, J. Tolle, J. Kouvetakis, 2005 .

Nucleation and growth of epitaxial ZrB2(0 0 0 1) on Si(1 1 1)

A. Chizmeshya, J. Tolle, J. Kouvetakis, 2004 .

Epitaxial growth of the pseudo-binary wide band gap semiconductor SiCAlN

C. Poweleit, David J. Smith, P. Crozier, 2003 .

Low-temperature growth of SiCalN films of high hardness on Si(111) substrates

David J. Smith, P. Crozier, J. Tolle, 2001 .

Low-temperature epitaxial growth of the quaternary wide band gap semiconductor SiCAlN.

C. Poweleit, P. Crozier, A. Chizmeshya, 2002, Physical review letters.

Concept and synthetic approach for a kilogram scale synthesis of octa-d-arginine amide nonahydrochloride salt

V. Kishore, J. Tolle, J. Napier, 2005 .

High level of tyrosine protein kinase in a murine lymphoma cell line induced by Moloney leukemia virus.

J. Tolle, G. Gacon, S. Gisselbrecht, 1982, The EMBO journal.

Active esters of 9-fluorenylmethyloxycarbonyl amino acids and their application in the stepwise lengthening of a peptide chain

Jean Martínez, J. Tolle, M. Bodanszky, 1980 .

Side reactions in peptide synthesis. X. Prevention of O-acylation during coupling with active esters.

J. Tolle, M. Bodanszky, J. Martinez, 2009, International journal of peptide and protein research.

Stoichiometric and non-stoichiometric films in the Si–O–N system: mechanical, electrical, and dielectric properties

S. Dey, P. Crozier, J. Tolle, 2003 .

Cholecystokinin (pancreozymin). Synthesis and properties of the N alpha-acetyl-derivative of cholecystokinin 27-33.

V. Mutt, J. Tolle, J. Gardner, 2009, International journal of peptide and protein research.

Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth

A. Mosleh, J. Margetis, S. Al-Kabi, 2018, Scientific Reports.

Raman scattering in Ge1−ySny alloys

John Tolle, John Kouvetakis, Christian D. Poweleit, 2007 .

Electrically injected GeSn lasers on Si operating up to 100 K

R. Soref, Jifeng Liu, G. Salamo, 2020, 2004.09402.

X-ray diffraction study of strain relaxation, spontaneous compositional gradient, and dislocation density in GeSn/Ge/Si(100) heterostructures

G. Salamo, J. Margetis, J. Tolle, 2020, Semiconductor Science and Technology.

Study of Si-Based GeSn Optically Pumped Lasers With Micro-Disk and Ridge Waveguide Structures

J. Margetis, W. Du, J. Tolle, 2019, Front. Phys..

Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si

Wei Du, Richard Soref, Wei Dou, 2019, ACS Photonics.

Study of High-Quality GeSn Alloys Grown by Chemical Vapor Deposition towards Mid-Infrared Applications

R. Soref, A. Mosleh, J. Margetis, 2016, Journal of Electronic Materials.

Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

Wei Du, Richard A. Soref, Hameed A. Naseem, 2014 .

Competition of optical transitions between direct and indirect bandgaps in Ge1−xSnx

Wei Du, Richard A. Soref, Hameed A. Naseem, 2014 .

Synthesis, Stability Range, and Fundamental Properties of Si—Ge—Sn Semiconductors Grown Directly on Si(100) and Ge(100) Platforms

V. D'costa, A. Chizmeshya, J. Tolle, 2010 .

Direct integration of active Ge1−x(Si4Sn)x semiconductors on Si(100)

V. D'costa, A. Chizmeshya, J. Tolle, 2009 .

Versatile buffer layer architectures based on Ge1−xSnx alloys

John Tolle, Stefan Zollner, John Kouvetakis, 2005 .

Tunable band structure in diamond–cubic tin–germanium alloys grown on silicon substrates

Corey L. Bungay, David J. Smith, John Tolle, 2003 .

Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductors

John Tolle, John Kouvetakis, Jose Menendez, 2010 .

Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff

Wei Du, Richard A. Soref, Hameed A. Naseem, 2014 .

Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection.

Wei Du, Huong Tran, Joe Margetis, 2016, Optics express.

Si based mid-infrared GeSn photo detectors and light emitters

Wei Du, Richard A. Soref, Hameed A. Naseem, 2015, SPIE NanoScience + Engineering.

Enhanced responsivity up to 2.85 A/W of Si-based Ge0.9Sn0.1 photoconductors by integration of interdigitated electrodes

R. Soref, A. Mosleh, J. Margetis, 2015, 2015 Conference on Lasers and Electro-Optics (CLEO).

Si-based Ge0.9Sn0.1 photodetector with peak responsivity of 2.85 A/W and longwave cutoff at 2.4 μm

Wei Du, Richard A. Soref, Joe Margetis, 2015 .

Material Characterization of Ge1−xSnx Alloys Grown by a Commercial CVD System for Optoelectronic Device Applications

Hameed A. Naseem, Seyed Amir Ghetmiri, Aboozar Mosleh, 2014, Journal of Electronic Materials.

Direct gap electroluminescence from Si/Ge1−ySny p-i-n heterostructure diodes

J. Tolle, R. Beeler, J. Kouvetakis, 2011 .

Epitaxial film growth of zirconium diboride on Si(0 0 1)

A. Chizmeshya, J. Tolle, J. Kouvetakis, 2005 .

Compositional dependence of Raman frequencies in ternary Ge 1-x-y Si x Sn y alloys

C. Poweleit, V. D'costa, J. Tolle, 2007 .

Ge1−ySny∕Si(100) composite substrates for growth of InxGa1−xAs and GaAs1−xSbx alloys

V. D'costa, J. Tolle, J. Kouvetakis, 2007 .

Characterization of Highly Doped Si:P, Si:As and Si:P:As Epi Layers for Source/Drain Epitaxy

A. Hikavyy, E. Rosseel, B. Douhard, 2019, ECS Transactions.

Molecular-based synthetic approach to new group IV materials for high-efficiency, low-cost solar cells and Si-based optoelectronics.

V. D'costa, Yan Fang, A. Chizmeshya, 2008, Journal of the American Chemical Society.

Ge–Sn semiconductors for band-gap and lattice engineering

Stefan Zollner, John Kouvetakis, Jose Menendez, 2002 .

Low temperature chemical vapor deposition of Si-based compounds via SiH3SiH2SiH3: Metastable SiSn∕GeSn∕Si(100) heteroepitaxial structures

V. D'costa, A. Chizmeshya, J. Tolle, 2006 .

Investigation on the Formation and Propagation of Defects in GeSn Thin Films

Wei Du, Richard A. Soref, Hameed A. Naseem, 2014 .

Characterization of Epitaxial Si:C:P and Si:P Layers for Source/Drain Formation in Advanced Bulk FinFETs

A. Hikavyy, K. Wostyn, G. Mannaert, 2014 .

Chemical routes to Ge /Si(100) structures for low temperature Si-based semiconductor applications

M. Wistey, A. Chizmeshya, J. Tolle, 2007 .

Optical Characterization of Si-Based Ge1−xSnx Alloys with Sn Compositions up to 12%

Wei Du, Richard A. Soref, Wei Dou, 2016, Journal of Electronic Materials.

SnGe superstructure materials for Si-based infrared optoelectronics

David Smith, John Tolle, Stefan Zollner, 2003 .

Optical characterization of Si1−xGex nanodots grown on Si substrates via ultrathin SiO2 buffer layers

C. Poweleit, J. Tolle, J. Kouvetakis, 2007 .

Synthesis of butane-like SiGe hydrides: enabling precursors for CVD of Ge-rich semiconductors.

A. Chizmeshya, J. Tolle, J. Kouvetakis, 2006, Journal of the American Chemical Society.

Low-temperature pathways to Ge-rich Si1−xGex alloys via single-source hydride chemistry

A. Chizmeshya, J. Tolle, J. Kouvetakis, 2005 .

Synthesis of highly coherent SiGe and Si4Ge nanostructures by molecular beam epitaxy of H3SiGeH3 and Ge(SiH3)4

M. Bauer, P. Crozier, J. Tolle, 2003 .

Electrically injected GeSn lasers with peak wavelength up to 27 µm

Jifeng Liu, Yuanhao Miao, J. Margetis, 2021, Photonics Research.

Shortwave-infrared photoluminescence from Ge1−xSnx thin films on silicon

Wei Du, Richard A. Soref, Hameed A. Naseem, 2014 .

Synthesis of a new type of cyclic peptide: a bicyclic nonapeptide

E. Blout, J. Tolle, M. Staples, 1982 .

Ge1−xSnx alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration

E. O’Reilly, I. Marko, S. Sweeney, 2019, Scientific Reports.

New IR semiconductors in the Si-Ge-Sn system

J. Tolle, J. Kouvetakis, J. Menéndez, 2004, First IEEE International Conference on Group IV Photonics, 2004..

Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon

John Tolle, John Kouvetakis, Chi Xu, 2010 .

Tunable optical gap at a fixed lattice constant in group-IV semiconductor alloys.

V. D'costa, J. Tolle, Y. Fang, 2009, Physical review letters.

Optical and structural properties of SixSnyGe1−x−y alloys

John Tolle, Stefan Zollner, John Kouvetakis, 2004 .

Fundamental Studies of P(GeH3)3, As(GeH3)3, and Sb(GeH3)3: Practical n-Dopants for New Group IV Semiconductors

A. Chizmeshya, J. Tolle, J. Kouvetakis, 2006 .

Transferability of optical bowing parameters between binary and ternary group-IV alloys

S. Zollner, V. D'costa, J. Tolle, 2006 .

Study of High Performance GeSn Photodetectors with Cutoff Wavelength Up to 3.7 μm for Low-Cost Infrared Imaging

R. Soref, J. Margetis, H. Tran, 2019, Conference on Lasers and Electro-Optics.

Sn-alloying as a means of increasing the optical absorption of Ge at the C- and L-telecommunication bands

V. D'costa, J. Tolle, J. Kouvetakis, 2009 .

Synthesis of Uniform GaN Quantum Dot Arrays via Electron Nanolithography of D2GaN3

P. Crozier, J. Tolle, J. Kouvetakis, 2004, Microscopy and Microanalysis.

Phosphorus doped SiC Source Drain and SiGe channel for scaled bulk FinFETs

R. Ritzenthaler, A. Hikavyy, G. Mannaert, 2012, 2012 International Electron Devices Meeting.

High-Performance Near-IR Photodiodes: A Novel Chemistry-Based Approach to Ge and Ge–Sn Devices Integrated on Silicon

J. Tolle, R. Beeler, J. Kouvetakis, 2011, IEEE Journal of Quantum Electronics.

A Convergent Process for the Preparation of Adamantane 11-β-HSD-1 Inhibitors

J. Tolle, S. Wagaw, Kenneth M. Engstrom, 2008 .

A Convenient Preparation of 4-t-Butyl-L-phenylalanine

J. Tolle, Jianjun Jiang, Robert B. Miller, 1998 .

A Convenient Preparation of 4-t-Butyl-L-phenylalanine.

J. Tolle, Jianjun Jiang, Robert B. Miller, 1998 .

Practical Design Considerations for Stage Length, Perforation Clusters and Limited Entry Pressure Intensities

J. Tolle, S. Mondal, P. Huckabee, 2021 .

A Machine-Learning Methodology Using Domain-Knowledge Constraints for Well-Data Integration and Well-Production Prediction

Bianca Zadrozny, Ligang Lu, Detlef Hohl, 2019, SPE Reservoir Evaluation & Engineering.

Side reactions in peptide synthesis. V.A reexamination of the mixed anhydride method.

J. Tolle, M. Bodanszky, 2009, International journal of peptide and protein research.

Ge1−xSnx alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration

E. O’Reilly, I. Marko, S. Sweeney, 2019, Scientific Reports.

Infrared dielectric function of p -type Ge 0.98 Sn 0.02 alloys

V. D'costa, J. Tolle, J. Kouvetakis, 2009 .

Sn-based group-IV semiconductors on Si: New infrared materials and new templates for mismatched epitaxy

V. D'costa, A. Chizmeshya, J. Tolle, 2005 .

New Ge-Sn materials with adjustable bandgaps and lattice constants

John Tolle, Stefan Zollner, John Kouvetakis, 2002 .

SiGe band-to-band tunneling calibration based on p-i-n diodes: Fabrication, measurement and simulation

A. Hikavyy, H. Dekkers, B. Douhard, 2013 .

Fundamental Studies of P(GeH3)3, As(GeH3)3, and Sb(GeH3)3: Practical n-Dopants for New Group IV Semiconductors.

A. Chizmeshya, J. Tolle, J. Kouvetakis, 2007 .

Strained Si films grown by chemical vapor deposition of trisilane on Ge buffered Si(100)

C. Poweleit, J. Tolle, J. Kouvetakis, 2008 .