Wei Huang

发表

Influence of order degree of amorphous germanium on metal induced crystallization

Cheng Li, H. Lai, Peng Wang, 2015 .

An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices

Cheng Li, X. Chi, H. Lai, 2016 .

Wet thermal annealing effect on TaN/HfO2/Ge metal - Oxide - Semiconductor capacitors with and without a GeO2 passivation layer

Cheng Li, H. Lai, G. Liu, 2012 .

Interface characteristics and electrical transport of Ge/Si heterojunction fabricated by low-temperature wafer bonding

Cheng Li, Songyan Chen, Wei Huang, 2018, Journal of Physics D: Applied Physics.

Study on crystallization mechanism of GeSn interlayer for low temperature Ge/Si bonding

Cheng Li, Songyan Chen, Wei Huang, 2021, Journal of Materials Science: Materials in Electronics.

Crystallization of GeSn thin films deposited on Ge(100) substrate by magnetron sputtering

Cheng Li, Songyan Chen, Wei Huang, 2018, Materials Science in Semiconductor Processing.

High-performing silicon-based germanium Schottky photodetector with ITO transparent electrode*

Cheng Li, Songyan Chen, Wei Huang, 2021, Chinese Physics B.

Low-Temperature Fabrication of Wafer-Bonded Ge/Si p-i-n Photodiodes by Layer Exfoliation and Nanosecond-Pulse Laser Annealing

Zhiyong Li, B. Cheng, Cheng Li, 2019, IEEE Transactions on Electron Devices.

Innovative Ge–SiO2 bonding based on an intermediate ultra-thin silicon layer

Cheng Li, Songyan Chen, Wei Huang, 2017, Journal of Materials Science: Materials in Electronics.

Strain-induced abnormal Ge/Si inter-diffusion during hetero-epitaxy process

Cheng Li, Songyan Chen, Wei Huang, 2021, Vacuum.

Simulation of the effects of defects in low temperature Ge buffer layer on dark current of Si-based Ge photodiodes

Wei Huang, Jun Li, Cheng Li, 2017 .

Depth-dependent etch pit density in Ge epilayer on Si substrate with a self-patterned Ge coalescence island template

Cheng Li, H. Lai, Songyan Chen, 2012 .

Micro Cantilever Beam Theory for Transverse Dynamics Using a Continuum Mechanics Model

Wei Huang, Cheng Li, L. Yao, 2011 .

Formation of high-Sn content polycrystalline GeSn films by pulsed laser annealing on co-sputtered amorphous GeSn on Ge substrate*

Cheng Li, Songyan Chen, Wei Huang, 2017 .

Low-temperature plasma enhanced atomic layer deposition of large area HfS2 nanocrystal thin films

Cheng Li, Songyan Chen, Wei Huang, 2020, Chinese Physics B.

A CMOS-compatible approach to fabricate an ultra-thin germanium-on-insulator with large tensile strain for Si-based light emission.

Cheng Li, H. Lai, Songyan Chen, 2013, Optics express.

Analysis of tensile strain enhancement in Ge nano-belts on an insulator surrounded by dielectrics

Chen Wang, Cheng Li, H. Lai, 2013 .

Interface characteristics of different bonded structures fabricated by low-temperature a-Ge wafer bonding and the application of wafer-bonded Ge/Si photoelectric device

Cheng Li, Songyan Chen, Wei Huang, 2018, Journal of Materials Science.

The impact of polishing on germanium-on-insulator substrates

Cheng Li, H. Lai, Songyan Chen, 2013 .

Impacts of Thermal Annealing on Hydrogen-Implanted Germanium and Germanium-on-Insulator Substrates

Cheng Li, R. Liu, H. Lai, 2011 .

Formation and optical properties of nanocrystalline selenium on Si substrate

Cheng Li, H. Lai, Songyan Chen, 2011 .

A thin transition film formed by plasma exposure contributes to the germanium surface hydrophilicity

Yihong Xu, Cheng Li, Songyan Chen, 2016 .

Physical and electrical properties of thermally oxidized dielectrics on Si-capped Ge-on-Si substrate

Cheng Li, H. Lai, Songyan Chen, 2012 .

High-specific-detectivity, low-dark-current Ge nanowire metal–semiconductor–metal photodetectors fabricated by Ge condensation method

Cheng Li, Songyan Chen, Wei Huang, 2020, Journal of Physics D: Applied Physics.

Phosphorus diffusion in germanium following implantation and excimer laser annealing

Chen Wang, Cheng Li, H. Lai, 2014 .

High-k dielectric interlayered ITO/germanium Schottky photodiodes with low dark current and high photoconductive gain

Cheng Li, Songyan Chen, Wei Huang, 2020, Journal of Materials Science.

Suppressing the formation of GeOx by doping Sn into Ge to modulate the Schottky barrier height of metal/n-Ge contact

Chen Wang, Cheng Li, Songyan Chen, 2016 .

High-performance germanium n+/p junction by nickel-induced dopant activation of implanted phosphorus at low temperature*

Chen Wang, Cheng Li, H. Lai, 2016 .

The Transition of Growth Behaviors of Moderate Sn Fraction Ge1-Xsnx (8%

Kun Qian, Cheng Li, Songyan Chen, 2022, SSRN Electronic Journal.

Thickness-dependent behavior of strain relaxation and Sn segregation of GeSn epilayer during rapid thermal annealing

Kun Qian, Cheng Li, Songyan Chen, 2022, Journal of Alloys and Compounds.

Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge n+/p Diode Achieved by Implantation and Excimer Laser Annealing

Chen Wang, Cheng Li, H. Lai, 2013 .

Schottky barrier height modulation effect on n-Ge with TaN contact

Cheng Li, Songyan Chen, Wei Huang, 2019, Materials Science in Semiconductor Processing.

Low resistivity Ta textured film formed on TaN

Cheng Li, H. Lai, Songyan Chen, 2018, Thin Solid Films.

A Variable Step Size LMS Based on Sparsity for System Identification

Wei Huang, Zhongkui Zhu, Wei Fan, 2013 .

Influence of Implantation Damages and Intrinsic Dislocations on Phosphorus Diffusion in Ge

Cheng Li, Songyan Chen, Wei Huang, 2013, IEEE Transactions on Electron Devices.

Strain evolution in SiGe-on-insulator fabricated by a modified germanium condensation technique with gradually reduced condensation temperature

Cheng Li, Songyan Chen, Wei Huang, 2019, Materials Science in Semiconductor Processing.

Spin-on doping of phosphorus on Ge with a 9 nm amorphous Si capping layer to achieve n+/p shallow junctions through rapid thermal annealing

Cheng Li, Songyan Chen, Wei Huang, 2019, Journal of Physics D: Applied Physics.

Room temperature photoluminescence from tensile-strained germanium-on-insulator fabricated by a Ge condensation technique

Cheng Li, H. Lai, Songyan Chen, 2012, 2012 Asia Communications and Photonics Conference (ACP).

Tuning the electron transport behavior at Li/LATP interface for enhanced cyclability of solid-state Li batteries

Qiaobao Zhang, Xiang Han, Shunqing Wu, 2022, Nano Research.

Microcavity effects in SiGe/Si heterogeneous nanostructures prepared by electrochemical anodization of SiGe/Si multiple quantum wells

Handong Sun, Cheng Li, H. Lai, 2011 .

Optical property investigation of SiGe nanocrystals formed by electrochemical anodization

Cheng Li, H. Lai, Songyan Chen, 2011 .

Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate

Cheng Li, Songyan Chen, Wei Huang, 2016, Materials.

Design of wafer-bonded structures for near room temperature Geiger-mode operation of germanium on silicon single-photon avalanche photodiode.

Cheng Li, Songyan Chen, Wei Huang, 2017, Applied optics.

High gain, broadband p-WSe_2/n-Ge van der Waals heterojunction phototransistor with a Schottky barrier collector

Cheng Li, Songyan Chen, Wei Huang, 2022, Nano Research.

High-Sn fraction GeSn quantum dots for Si-based light source at 1.55 μm

Cheng Li, Songyan Chen, Wei Huang, 2019, Applied Physics Express.

Dislocation nucleation triggered by thermal stress during Ge/Si wafer bonding process at low annealing temperature

Cheng Li, Songyan Chen, Wei Huang, 2021 .

Confining invasion directions of Li+ to achieve efficient Si anode material for lithium-ion batteries

Qiaobao Zhang, Cheng Li, Zi-zhong Zhu, 2021 .

Tailoring the interfaces of silicon/carbon nanotube for high rate lithium-ion battery anodes

Xiang Han, Yong Yang, Cheng Li, 2020 .

Evolution of Laser-Induced Specific Nanostructures on SiGe Compounds via Laser Irradiation Intensity Tuning

Cheng Li, H. Lai, Peng Wang, 2014, IEEE Photonics Journal.

Investigations of morphology and formation mechanism of laser-induced annular/droplet-like structures on SiGe film.

Cheng Li, H. Lai, Hanhui Liu, 2013, Optics express.

Efficient Electroabsorption Modulation of Mid- and Far-Infrared Radiation by Driving the Band-Inversion Transition of InAs / GaSb Type-II Quantum Wells

Cheng Li, Wei Huang, Zhenhua Wu, 2021, Physical Review Applied.

Self‐Powered High‐Detectivity Lateral MoS2 Schottky Photodetectors for Near‐Infrared Operation

Cheng Li, Songyan Chen, Wei Huang, 2021, Advanced Electronic Materials.

Universal absorption of two-dimensional materials within k ⋅ p method

Cheng Li, Songyan Chen, Wei Huang, 2018, Physics Letters A.

Strong electroluminescence from direct band and defects in Ge n+/p shallow junctions at room temperature

Chen Wang, Cheng Li, H. Lai, 2016 .

Low dark current broadband 360-1650 nm ITO/Ag/n-Si Schottky photodetectors.

Cheng Li, Songyan Chen, Wei Huang, 2018, Optics express.

Lateral Ge segregation and strain evolution in SiGe alloys during the formation of nickel germano-silicide on a relaxed Si0.73Ge0.27 epilayer

Chen Wang, Cheng Li, H. Lai, 2013 .

A Study of the Schottky-Barrier Height of Nickel Germanosilicide Contacts Formed on $\hbox{Si}_{1-x}\hbox{Ge}_{x}$ Epilayer on Si Substrates

Cheng Li, H. Lai, Songyan Chen, 2012, IEEE Transactions on Electron Devices.

Influence of the hydrogen implantation power density on ion cutting of Ge

Cheng Li, H. Lai, Songyan Chen, 2013 .

Strain evolution of SiGe-on-insulator fabricated by germanium condensation method with over-oxidation

Cheng Li, H. Lai, Songyan Chen, 2016 .

Effects of Mining on Urban Environmental Change: A Case Study of Panzhihua

Cheng Li, Wei Huang, Wenyu Li, 2022, Remote Sensing.

Interface State Calculation of the Wafer-Bonded Ge/Si Single-Photon Avalanche Photodiode in Geiger Mode

Cheng Li, Songyan Chen, Wei Huang, 2017, IEEE Transactions on Electron Devices.

Geiger mode theoretical study of a wafer-bonded Ge on Si single-photon avalanche photodiode

B. Cheng, Cheng Li, Songyan Chen, 2017 .

An environmental friendly cross-linked polysaccharide binder for silicon anode in lithium-ion batteries

Xiang Han, Cheng Li, Songyan Chen, 2019, Ionics.

Theoretical study of a group IV p–i–n photodetector with a flat and broad response for visible and infrared detection

Cheng Li, Songyan Chen, Wei Huang, 2020, Journal of Semiconductors.

Raman scattering study of amorphous GeSn films and their crystallization on Si substrates

Cheng Li, Songyan Chen, Wei Huang, 2016 .

High-Performance Ge p-n Photodiode Achieved With Preannealing and Excimer Laser Annealing

Wei Huang, Songyan Chen, Hongkai Lai, 2015, IEEE Photonics Technology Letters.

Self-mask fabrication of uniformly orientated SiGe island/SiGe/Si hetero-nanowire arrays with controllable sizes

Cheng Li, H. Lai, Hanhui Liu, 2013 .

Preparation for Si/Se/Si sandwich structure on Si (001)

Cheng Li, H. Lai, Songyan Chen, 2010, 7th IEEE International Conference on Group IV Photonics.

Poly‐GeSn Junctionless Thin‐Film Transistors on Insulators Fabricated at Low Temperatures via Pulsed Laser Annealing

Cheng Li, Songyan Chen, Wei Huang, 2019, physica status solidi (RRL) – Rapid Research Letters.

Insights into the Enhanced Interfacial Stability Enabled by Electronic Conductor Layers in Solid‐State Li Batteries

Qiaobao Zhang, Xiang Han, Qiulong Wei, 2023, Advanced Energy Materials.

High (1 1 1) orientation poly-Ge film fabricated by Al induced crystallization without the introduction of AlOx interlayer

Yihong Xu, Cheng Li, Peng Wang, 2015 .

Germanium n+/p Shallow Junction With Record Rectification Ratio Formed by Low-Temperature Preannealing and Excimer Laser Annealing

Chen Wang, Cheng Li, H. Lai, 2014, IEEE Transactions on Electron Devices.

Energy band design for p-type tensile strained Si/SiGe multi-quantum well infrared photodetector

Cheng Li, H. Lai, D. Qi, 2011 .

Impacts of Dislocations on the Anisotropic Etching of Ge/Si for Suspended Ge Membrane

Cheng Li, H. Lai, Songyan Chen, 2016 .

Low-dark-current, high-responsivity indium-doped tin oxide/Au/n-Ge Schottky photodetectors for broadband 800–1650 nm detection

Cheng Li, Songyan Chen, Wei Huang, 2018, Applied Physics Express.

Observation of trap-related phenomena in electrical performance of back-gated MoS2 field-effect transistors

Cheng Li, Songyan Chen, Wei Huang, 2020, Semiconductor Science and Technology.

Enhancing the interface stability of Li1.3Al0.3Ti1.7(PO4)3 and lithium metal by amorphous Li1.5Al0.5Ge1.5(PO4)3 modification

Xiang Han, Cheng Li, Songyan Chen, 2020, Ionics.

Resistive switching properties of polycrystalline HfOxNy films by plasma-enhanced atomic layer deposition

Cheng Li, H. Lai, Songyan Chen, 2017 .

Sparse Representation De-Noising Based on Morlet Wavelet Basis and its Application for Transient Feature Extraction

Zhongkui Zhu, Wei Fan, Wei Guo Huang, 2014 .

Enhanced circular photogalvanic effect in HgTe quantum wells in the heavily inverted regime

Cheng Li, Songyan Chen, Wei Huang, 2016, 1605.00308.

Controllable synthesis of Si-based GeSn quantum dots with room-temperature photoluminescence

Kun Qian, Cheng Li, Songyan Chen, 2021, Applied Surface Science.

Texture Evolution and Grain Competition in NiGe Film on Ge(001)

Jun Li, Wei Huang, Mengrao Tang, 2013 .

Growth mechanism identification of sputtered single crystalline bismuth nanowire

Cheng Li, Songyan Chen, Wei Huang, 2019, Applied Nanoscience.

Effective Strain Relaxation of Gesn Single Crystal with Sn Content of 16.5% on Ge Grown by High-Temperature Sputtering

Kun Qian, Cheng Li, Songyan Chen, 2023, SSRN Electronic Journal.

Impacts of excimer laser annealing on Ge epilayer on Si

Cheng Li, Songyan Chen, Wei Huang, 2017 .

Modulation of Schottky Barrier Height of Metal/TaN/n-Ge Junctions by Varying TaN Thickness

Cheng Li, H. Lai, Songyan Chen, 2012, IEEE Transactions on Electron Devices.

Modulation of WN x /Ge Schottky barrier height by varying N composition of tungsten nitride

Chen Wang, Cheng Li, Songyan Chen, 2015 .

Ohmic contact formation of metal/amorphous-Ge/n-Ge junctions with an anomalous modulation of Schottky barrier height

Xiang Han, Chen Wang, Cheng Li, 2014 .

Ohmic contact to n-type Ge with compositional Ti nitride

H. Lai, Songyan Chen, Wei Huang, 2013 .

Resonant-cavity-enhanced 4H-SiC thin film MSM UV photodetectors on SiO2/Si substrates

Songyan Chen, Wei Huang, Guangyang Lin, 2024, Journal of Physics D: Applied Physics.