V. Shah

发表

Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry

M. Prunnila, A. Shchepetov, M. Myronov, 2014 .

High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry

M. R. Wagner, C. M. Torres, M. Prunnila, 2014 .

Study of 4H-SiC Superjunction Schottky Rectifiers with Implanted P-Pillars

C. W. Chan, P. Mawby, V. Shah, 2019, Materials Science Forum.

Mapping the Strain State of 3C-SiC/Si (001) Suspended Structures Using μ-XRD

M. Myronov, D. Leadley, V. Shah, 2016 .

Electrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS-compatible suspended structures

M. Myronov, D. Leadley, E. Parker, 2012 .

Silicon-Based Cooling Elements

Hung Q. Nguyen, P. Mauskopf, Qing-Tai Zhao, 2014 .

Reverse graded relaxed buffers for high Ge content SiGe virtual substrates

M. Myronov, D. Leadley, V. Shah, 2008 .

Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates

M. Myronov, D. Leadley, V. Shah, 2010 .

Ultra-high hole mobility exceeding one million in a strained germanium quantum well

M. Myronov, D. Leadley, E. Parker, 2012 .

Precision plasma etching of Si, Ge, and Ge:P by SF6 with added O2

M. Myronov, D. Leadley, E. Parker, 2014 .

Mapping the strain and tilt of a suspended 3C-SiC membrane through micro X-ray diffraction

M. Myronov, D. Leadley, V. Shah, 2016 .

Strained Si and Ge Channels

M. Myronov, D. Leadley, E. Parker, 2010 .

The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal

P. Mawby, M. Antoniou, V. Shah, 2021, Materials Science in Semiconductor Processing.

An extremely high room temperature mobility of two-dimensional holes in a strained Ge quantum well heterostructure grown by reduced pressure chemical vapor deposition

M. Myronov, D. Leadley, V. Shah, 2014 .

The Optimization of 3.3 kV 4H-SiC JBS Diodes

Y. Sharma, V. Pathirana, T. Trajkovic, 2022, IEEE Transactions on Electron Devices.

Characterization of 4H-SiC PiN Diodes Formed on Defects Identified by PL Imaging

P. Mawby, R. Bonyadi, V. Shah, 2016 .

Elimination of Microtrenching in Trenches in 4H-Silicon Carbide Using Shadow Masking

C. Fisher, P. Mawby, V. Shah, 2015 .

Ultra-High Hall Mobility (1 x 106 cm2V-1S-1) in a Two-Dimensional Hole Gas in a Strained Germanium Quantum Well Grown by Reduced Pressure CVD

M. Myronov, D. Leadley, T. Whall, 2012, 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM).

Spin transport in germanium at room temperature

D. Ritchie, T. Trypiniotis, D. Leadley, 2010 .

Interfacial Engineering of Semiconductor–Superconductor Junctions for High Performance Micro-Coolers

D Gunnarsson, J S Richardson-Bullock, M J Prest, 2015, Scientific Reports.

Superconducting platinum silicide for electron cooling in silicon

M. Prunnila, J. Muhonen, D. Leadley, 2014, 1405.4119.

Comparison of electron–phonon and hole–phonon energy loss rates in silicon

M. Prunnila, M. Myronov, D. Leadley, 2015 .

Hole-phonon energy loss rate in boron doped silicon

M. Prunnila, M. Myronov, D. Leadley, 2013, 2013 14th International Conference on Ultimate Integration on Silicon (ULIS).

Strain enhanced electron cooling in a degenerately doped semiconductor

M. Prunnila, J. Muhonen, M. Myronov, 2011, 1111.0465.

Thermal Isolation Through Nanostructuring

J. Pekola, M. Prunnila, J. Ahopelto, 2014 .

Using platinum silicide as a superconductor for silicon electron coolers

M. Prunnila, J. Muhonen, D. Leadley, 2013, 2013 14th International Conference on Ultimate Integration on Silicon (ULIS).

A First Evaluation of Thick Oxide 3C-SiC MOS Capacitors Reliability

Amador Perez-Tomas, C. Fisher, P. Mawby, 2020, IEEE Transactions on Electron Devices.

Parametric nano-electrical analysis for SiC junctions of a packaged device

V. Shah, P. Gammon, R. Germanicus, 2022, 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe).

Characterization and modeling of n-n Si∕SiC heterojunction diodes

J. Covington, P. Mawby, V. Shah, 2007 .

Reverse graded strain relaxed SiGe buffers for CMOS and optoelectronic integration

M. Myronov, D. Leadley, V. Shah, 2012 .

High doped MBE Si p-n and n-n heterojunction diodes on 4H-SiC

James A. Covington, Amador Pérez-Tomás, M. R. Jennings, 2007, Microelectron. J..

Molecular beam epitaxy Si/4H-SiC heterojunction diodes

J. Covington, P. Mawby, V. Shah, 2007, 2007 International Workshop on Physics of Semiconductor Devices.

Modelling the inhomogeneous SiC Schottky interface

Philip A. Mawby, Evgeniy Donchev, Jing S. Pang, 2013 .

A study of temperature-related non-linearity at the metal-silicon interface

Philip A. Mawby, Evgeniy Donchev, Jing S. Pang, 2012 .

Interface characteristics of n-n and p-n Ge/SiC heterojunction diodes formed by molecular beam epitaxy deposition

James A. Covington, Philip A. Mawby, Amador Pérez-Tomás, 2010 .

Analysis of inhomogeneous Ge/SiC heterojunction diodes

James A. Covington, Philip A. Mawby, Amador Pérez-Tomás, 2009 .

Flexural mode dispersion in ultra-thin Ge membranes

E. Chavez, F. Alzina, C. S. Sotomayor Torres, 2013, 2013 14th International Conference on Ultimate Integration on Silicon (ULIS).

Ultrasonic Inspection and Self-Healing of Ge and 3C-SiC Semiconductor Membranes

M. Myronov, D. Leadley, V. Shah, 2020, Journal of Microelectromechanical Systems.

Electrical properties and strain distribution of Ge suspended structures

C. M. Torres, M. Myronov, D. Leadley, 2015 .

High quality relaxed Ge layers grown directly on a Si(0 0 1) substrate

M. Myronov, D. Leadley, V. Shah, 2011 .

High quality strained Ge epilayers on a Si0.2Ge0.8/Ge/Si(100) global strain-tuning platform

M. Myronov, D. Leadley, V. Shah, 2010 .

Development of High-Quality Gate Oxide on 4H-SiC Using Atomic Layer Deposition

P. Mawby, V. Shah, P. Gammon, 2020 .

Minority carrier lifetime in indium doped silicon for photovoltaics

M. Myronov, V. Voronkov, R. Falster, 2019, Progress in Photovoltaics: Research and Applications.

Electrical activation of nitrogen heavily implanted 3C-SiC(1 0 0)

C. Fisher, P. Mawby, Y. Sharma, 2015 .

The Cryogenic Testing and Characterisation of SiC Diodes

C. Fisher, P. Mawby, M. Myronov, 2014 .

Cryogenic Characterization of Commercial SiC Power MOSFETs

C. Fisher, P. Mawby, S. Jahdi, 2015 .

3.3 kV SiC JBS diodes employing a P2O5 surface passivation treatment to improve electrical characteristics

J. Ortiz-Gonzalez, P. Mawby, V. Pathirana, 2021, 2021 IEEE Energy Conversion Congress and Exposition (ECCE).

Improved Channel Mobility by Oxide Nitridation for N-Channel MOSFET on 3C-SiC(100)/Si

P. Mawby, Y. Sharma, V. Shah, 2016 .

Tensile strain mapping in flat germanium membranes

M. Myronov, D. Leadley, V. Shah, 2014, 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM).

Design and Optimisation of Schottky Contact Integration in a 4H-SiC Trench MOSFET

P. Mawby, V. Shah, P. Gammon, 2019 .

Surface Effects of Passivation within Mo/4H-SiC Schottky Diodes through MOS Analysis

P. Mawby, M. Walker, V. Shah, 2019, Materials Science Forum.