Pan Jiaoqing

发表

Growth of High-Quality GaAs on Ge by Controlling the Thickness and Growth Temperature of Buffer Layer

Zhou Xuliang, Pan Jiaoqing, Yu Hongyan, 2014 .

Monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators

Pan Jiaoqing, Zhu Hongliang, Zhang Yun-xiao, 2010 .

Monolithic integration of electroabsorption modulators and tunnel injection distributed feedback lasers using quantum well intermixing

Pan Jiaoqing, Zhu Hongliang, Wang Wei, 2010 .

Effect of annealing on optical properties of InAs quantum dots grown by MOCVD on GaAs (100) vicinal substrates

Pan Jiaoqing, Zhu Hongliang, Liang Song, 2005 .

Selective Area Growth of GaAs in V-Grooved Trenches on Si(001) Substrates by Aspect-Ratio Trapping

Zhou Xuliang, Pan Jiaoqing, L. Shiyan, 2015 .

Lattice Strain Induced by Ion Implantation in AlGaAs/AlGaInAs Quantum Well Samples

Pan Jiaoqing, Liu Xiangdong, Zhao Ming-wen, 2002 .

Design and fabrication of 1.55 μm broad area slotted single-mode Fabry–Perot lasers

Kan Qiang, Li Mengke, Yuan Lijun, 2016 .

InP Based PD/EAM Integrated Photonic Switch

Zhou Fan, Wang Wei, Zhu Hongliang, 2009 .