L. Shiyan

Growth of High-Quality GaAs on Ge by Controlling the Thickness and Growth Temperature of Buffer Layer

Zhou Xuliang, Pan Jiaoqing, Yu Hongyan, 2014 .

Low Ron,sp.diff and Ultra-high Voltage 4H-SiC n-channel IGBTs with carrier lifetime enhancement process

L. Shiyan, Yang Xiaolei, Liu Hao, 2020, 2020 17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

Current mechanism and band alignment of Al (Pt)/HfGdO/Ge capacitors

L. Shiyan, Zhu Yanyan, Y. Junjun, 2016 .

Selective Area Growth of GaAs in V-Grooved Trenches on Si(001) Substrates by Aspect-Ratio Trapping

Zhou Xuliang, Pan Jiaoqing, L. Shiyan, 2015 .

Optical absorption of hexagonal boron nitride involving nitrogen vacancies and their complexes

V. V. Lopatin, L. Shiyan, S. Grinyaev, 2004 .

Fabrication and dynamic switching characteristics of 6.5kV400A SiC MOSFET module

L. Shiyan, Du Yujie, Li Cui, 2020, 2020 17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

Design and fabrication of 1.55 μm broad area slotted single-mode Fabry–Perot lasers

Kan Qiang, Li Mengke, Yuan Lijun, 2016 .