F. Akyol

发表

Low resistance GaN/InGaN/GaN tunnel junctions

Siddharth Rajan, Pil Sung Park, Sriram Krishnamoorthy, 2012, 1211.4905.

Polarity in GaN and ZnO: Theory, measurement, growth, and devices

M. R. Wagner, H. Renevier, T. Palacios, 2016 .

InGaN/GaN Tunnel Junctions For Hole Injection in GaN Light Emitting Diodes

S. Rajan, S. Krishnamoorthy, F. Akyol, 2014, 1403.3932.

Tunnel-injected sub-260 nm ultraviolet light emitting diodes

Michael W. Moseley, Siddharth Rajan, Andrew A. Allerman, 2017, 1703.00117.

Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency

Jared M. Johnson, A. Allerman, S. Rajan, 2018 .

Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs

Michael W. Moseley, Siddharth Rajan, Andrew A. Allerman, 2017, 1705.08414.

Enhanced light extraction in tunnel junction-enabled top emitting UV LEDs

Michael W. Moseley, Siddharth Rajan, Yuewei Zhang, 2015, 1512.02260.

Design and Demonstration of Ultra Wide Bandgap AlGaN Tunnel Junctions

A. Allerman, S. Rajan, S. Krishnamoorthy, 2016, 1608.08653.

Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes

A. Allerman, S. Rajan, S. Krishnamoorthy, 2016, 1609.06240.

Sub 300 nm wavelength III-Nitride tunnel-injected ultraviolet LEDs

A. Allerman, S. Rajan, S. Krishnamoorthy, 2015, 2015 73rd Annual Device Research Conference (DRC).

Graded AlGaN Channel Transistors for Improved Current and Power Gain Linearity

S. Rajan, S. Krishnamoorthy, F. Akyol, 2017, IEEE Transactions on Electron Devices.

Simulation of Enhancement Mode GaN HEMTs with Threshold > 5 V using P-type Buffer

S. Rajan, S. Krishnamoorthy, F. Akyol, 2015, 1511.04438.

Power switching transistors based on GaN and AlGaN channels

A. Allerman, S. Rajan, S. Krishnamoorthy, 2015, 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

Modeling of High Composition AlGaN Channel HEMTs with Large Threshold Voltage

S. Rajan, F. Akyol, D. Nath, 2014, 1411.1447.

Ultralow-voltage-drop GaN/InGaN/GaN tunnel junctions with 12% indium content

S. Rajan, S. Krishnamoorthy, F. Akyol, 2017 .

Density-dependent electron transport and precise modeling of GaN high electron mobility transistors

J. Khurgin, S. Rajan, S. Reza, 2015, 1508.07050.

Design and Demonstration of Ultra Wide Bandgap AlGaN Tunnel Junctions

A. Allerman, S. Rajan, S. Krishnamoorthy, 2016, 1608.08653.

Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes

A. Allerman, S. Rajan, S. Krishnamoorthy, 2016, 1609.06240.

Record low tunnel junction specific resistivity (< 3×10−4 Ωcm2) in GaN inter-band tunnel junctions

S. Rajan, S. Krishnamoorthy, F. Akyol, 2012, 70th Device Research Conference.

Simulation of Enhancement Mode GaN HEMTs with Threshold > 5 V using P-type Buffer

S. Rajan, S. Krishnamoorthy, F. Akyol, 2015, 1511.04438.

Close oxygen coupled low-pressure chemical vapor deposition growth of high quality β−Ga

F. Akyol, I. Demir, 2022, Materials Science in Semiconductor Processing.

Simulation of β-Ga2O3 vertical Schottky diode based photodetectors revealing average hole mobility of 20 cm2 V−1 s−1

F. Akyol, 2020 .

Modeling of High Composition AlGaN Channel HEMTs with Large Threshold Voltage

S. Rajan, F. Akyol, D. Nath, 2014, 1411.1447.

Polarization-engineered GaN/InGaN/GaN tunnel diodes

S. Rajan, S. Krishnamoorthy, F. Akyol, 2010, 1008.4124.

N-Polar III–Nitride Green (540 nm) Light Emitting Diode

Siddharth Rajan, Pil Sung Park, Fatih Akyol, 2011 .

Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes

Siddharth Rajan, Pil Sung Park, Sriram Krishnamoorthy, 2012 .

AlGaN Channel Field Effect Transistors with Graded Heterostructure Ohmic Contacts

S. Rajan, S. Krishnamoorthy, F. Akyol, 2016, 1608.06686.

Interband tunneling for hole injection in III-nitride ultraviolet emitters

Michael W. Moseley, Siddharth Rajan, Jinwoo Hwang, 2015, 1502.02080.

High Al-Content AlGaN Transistor With 0.5 A/mm Current Density and Lateral Breakdown Field Exceeding 3.6 MV/cm

A. Allerman, S. Rajan, W. Lu, 2018, IEEE Electron Device Letters.

Örgütsel Adalet Algısının Örgütsel Bağlılığa Etkisi: Bahşiş Havuzu ile Bireysel Bahşiş Sisteminin Karşılaştırılması (The Effect of Organizational Justice Perception on Organizational Commitment: Comparison of Pooling and Individual Tip Distribution Systems)

F. Akyol, Z. Aslan, 2019, Journal of Tourism and Gastronomy Studies.

Tunneling-based carrier regeneration in cascaded GaN light emitting diodes to overcome efficiency droop

S. Rajan, S. Krishnamoorthy, F. Akyol, 2013 .

Low-resistance GaN tunnel homojunctions with 150 kA/cm2 current and repeatable negative differential resistance

Jared M. Johnson, S. Rajan, S. Krishnamoorthy, 2016, 1601.04353.

GaN-based three-junction cascaded light-emitting diode with low-resistance InGaN tunnel junctions

S. Rajan, S. Krishnamoorthy, F. Akyol, 2015 .