S. Miyazaki

Takahisa Yamamoto, Y. Kurokawa, N. Usami, 2018, 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC).

Bonding and Electron Energy-Level Alignment at Metal/TiO2 Interfaces: A Density Functional Theory Study

N. Umezawa, K. Shiraishi, Jinhua Ye, 2016 .

Influence of nitrogen incorporation in ultrathin SiO2 on the structure and electronic states of the SiO2/Si(100) interface

M. Ogasawara, S. Miyazaki, M. Hirose, 2000 .

Electron and hole components of tunneling currents through an interfacial oxide-high-k gate stack in metal-oxide-semiconductor capacitors

Khairurrijal, M. Abdullah, S. Miyazaki, 2010 .

Characterization of chemical bonding features at metal/GeO2 Interfaces by X-ray photoelectron spectroscopy

S. Higashi, S. Miyazaki, H. Murakami, 2011 .

Electronic structure and energy band offsets for ultrathin silicon nitride on Si(1 0 0)

S. Miyazaki, H. Murakami, M. Narasaki, 2003 .

Native Oxide Growth and Hydrogen Bonding Features on Chemically Cleaned Silicon Surfaces

S. Miyazaki, T. Yasaka, M. Takakura, 1993 .

Theoretical Study on Leakage Current in MOS with High-K Dielectric Stack: Effects of In-plane-Longitudinal Kinetic Energy Coupling and Anisotropic Masses

Khairurrijal, M. Abdullah, S. Miyazaki, 2009 .

Structure and electronic states of ultrathin SiO2 thermally grown on Si(100) and Si(111) surfaces

Seiichi Miyazaki, M. Fukuda, L. Ley, 1997 .

Energy band diagram for SiO2/Si system as evaluated from UPS analysis under vacuum ultraviolet with variable incident photon energy

N. Taoka, K. Makihara, M. Ikeda, 2020, Japanese Journal of Applied Physics.

Direct evaluation of electrical dipole moment and oxygen density ratio at high-k dielectrics/SiO2 interface by X-ray photoelectron spectroscopy analysis

K. Makihara, M. Ikeda, S. Miyazaki, 2018 .

Photoemission study on electrical dipole at SiO2/Si and HfO2/SiO2 interfaces

K. Makihara, M. Ikeda, S. Miyazaki, 2017 .

Praseodymium silicate formed by postdeposition high-temperature annealing

S. Miyazaki, A. Sakai, S. Zaima, 2004 .

Analysis of Soft Breakdown of 2.6–4.9-nm-Thick Gate Oxides

W. Mizubayashi, S. Miyazaki, 2004 .

Quantitative Analysis of Oxide Voltage and Field Dependence of Time-Dependent Dielectric Soft Breakdown and Hard Breakdown in Ultrathin Gate Oxides

W. Mizubayashi, S. Miyazaki, M. Hirose, 2002 .

Control of self-assembling formation of nanometer silicon dots by low pressure chemical vapor deposition

M. Ikeda, S. Miyazaki, M. Hirose, 2000 .

Fundamental limit of gate oxide thickness scaling in advanced MOSFETs

W. Mizubayashi, K. Shibahara, S. Miyazaki, 2000 .

Electronic defect states at ultrathin SiO2/Si interfaces from photoelectron yield spectroscopy

S. Miyazaki, A. Kohno, M. Hirose, 1999 .

Tunneling Transport and Reliability Evaluation in Extremely Thin Gate Oxides

W. Mizubayashi, K. Morino, S. Miyazaki, 1998 .

Interface formation between hydrogen terminated Si(111) and amorphous hydrogenated carbon (a-C:H)

L. Ley, J. Ristein, S. Miyazaki, 1997 .

Evaluation of Chemical Structure and Resistance Switching Characteristics of Undoped Titanium Oxide and Titanium–Yttrium Mixed Oxide

S. Higashi, S. Miyazaki, Y. Goto, 2011 .

The Impact of Y Addition into TiO2 on Electronic States and Resistive Switching Characteristics

S. Higashi, S. Miyazaki, Y. Goto, 2011 .

Structural stability of amorphous semiconductor superlattices

S. Miyazaki, M. Hirose, Yohji Ihara, 1987 .

Complex dielectric function of Si oxide as evaluated from photoemission measurements

K. Makihara, M. Ikeda, S. Miyazaki, 2020, Japanese Journal of Applied Physics.

Photoemission Study of metal/high-k Dielectric Gate Stack

S. Miyazaki, 2008 .

The interface analysis of GaN grown on 0° off 6H-SiC with an ultra-thin buffer layer

H. Amano, Ho‐Jun Lee, S. Miyazaki, 2015 .

Characterization of remote O2-plasma-enhanced CVD SiO2/GaN(0001) structure using photoemission measurements

K. Makihara, M. Ikeda, S. Miyazaki, 2017 .

Analysis of infrared attenuated total reflection spectra from thin SiO2 films on Si

S. Miyazaki, M. Hirose, C. Bjorkman, 1995 .

High Fluidity CVD of Silicon Oxide from SiH4 + O2 Plasma

H. Shin, S. Miyazaki, M. Hirose, 1991 .

Fundamental absorption edge spectrum of ultrathin a-Si : H film in multilayer obtained from luminescence excitation spectrum

S. Miyazaki, M. Hirose, K. Murayama, 1997 .

Modulation doping in a-Si:H/a-Ge:H multilayer structures

H. Deki, S. Miyazaki, M. Hirose, 1996 .

Excitation spectrum of luminescence in a-Si:H/a-Si3N4:H multilayers

S. Miyazaki, M. Hirose, T. Toyama, 1996 .

Narrow-bandgap a-Ge:H/a-Si:H multilayers for amorphous silicon-based solar cells

H. Deki, S. Miyazaki, M. Hirose, 1994 .

Phonon interaction in the photoluminescence of a-Si:H/a-Si3N4:H multilayers

S. Miyazaki, M. Hirose, K. Murayama, 1991 .

Structural characterization of amorphous silicon multilayer interfaces

S. Miyazaki, M. Hirose, Y. Kohda, 1989 .

a-Si3N4:H/a-Si:H Superlattices produced by plasma enhanced nitridation of a-Si:H

S. Miyazaki, M. Hirose, Keiichi Yamada, 1989 .

Superlattices and multilayers in hydrogenated amorphous-silicon devices

S. Miyazaki, M. Hirose, 1989 .

The Plasma Deposition of Semiconductor Multilater Structures

S. Miyazaki, M. Hirose, 1989 .

Resonant Tunneling Through Quantized States in a-Si:H

S. Miyazaki, M. Hirose, Yohji Ihara, 1987 .

Amorphous Silicon-Based Superlattices and their Potentials to Device Applications

S. Miyazaki, M. Hirose, Yohji Ihara, 1986 .

Doping effects in a-Si:H/a-Si1−xNx:H superlattices

S. Miyazaki, M. Hirose, Naoki Murayama, 1985 .

Luminescence and transport in a-Si:H/a-Si1−xNx:H quantum well structures

S. Miyazaki, M. Hirose, 1984 .

Electronic defect states in thermally-grown SiO2/4H-SiC structure measured by total photoelectron yield spectroscopy

K. Makihara, S. Miyazaki, A. Ohta, 2015 .

Real time observations of surface reactions during a-Si:H deposition or H2 plasma annealing by using FT-IR-ATR

S. Miyazaki, M. Hirose, Y. Yoshida, 1996 .

A new deposition mode in plasma-enhanced cryogenic CVD

S. Miyazaki, M. Hirose, H. Shin, 1991 .

Formation of the interface between c-Si(111) and diamond-like carbon studied with photoelectron spectroscopy

L. Ley, J. Ristein, S. Miyazaki, 1998 .

Structure and photoelectric properties of hydrogenated amorphous silicon-germanium alloys produced by high hydrogen dilution method

S. Miyazaki, M. Hirose, Chen Kun-ji, 1997 .

Interface properties of SiO2/GaN structures formed by chemical vapor deposition with remote oxygen plasma mixed with Ar or He

N. Taoka, M. Shimizu, K. Makihara, 2018 .

High thermal stability of abrupt SiO2/GaN interface with low interface state density

N. Taoka, M. Shimizu, K. Makihara, 2017 .

Native Oxidation Growth on Ge(111) and (100) Surfaces

S. K. Sahari, K. Makihara, S. Higashi, 2011 .

Photoemission study of energy-band alignments and gap-state density distributions for high-k gate dielectrics

Seiichi Miyazaki, S. Miyazaki, 2001 .

Energy band structure and electrical properties of Ga-oxide/GaN interface formed by remote oxygen plasma

N. Taoka, M. Shimizu, K. Makihara, 2018 .

Evaluation of Chemical Bonding Features and Resistance Switching Behaviors of Ultrathin Si Oxide Dielectric Sandwiched Between Pt Electrodes

S. Higashi, S. Miyazaki, Y. Goto, 2012 .

Photoemission Study of Ultrathin GeO2/Ge Heterostructures Formed by UV-O3 Oxidation

H. Nakagawa, S. Higashi, S. Miyazaki, 2006 .

Energy band structure of Ru/(Ba,Sr)TiO3/Si capacitor deposited by inductively-coupled plasma-assisted radio-frequency-magnetron plasma sputtering

T. Kikkawa, H. Yamada, S. Miyazaki, 2002 .

Characterization of Microcrystalline Silicon Thin Film Transistors Fabricated by Thermal Plasma Jet Crystallization Technique

S. Higashi, S. Miyazaki, T. Okada, 2010 .

Fermi-level pinning position modulation by Al-containing metal gate for cost-effective dual-metal/dual-high-k CMOS

T. Chikyow, K. Shiraishi, H. Watanabe, 2007, 2007 IEEE Symposium on VLSI Technology.

Atomic scale characterization of a-Si : H/a-SiC : H interface structures

S. Miyazaki, M. Hirose, Y. Yoshida, 1997 .

Characterization of Electroluminescence from One-Dimensionally Self-Aligned Si-Based Quantum Dots

K. Makihara, M. Ikeda, S. Miyazaki, 2012 .

Electroluminescence from One-Dimensionally Self-Aligned Si-Based Quantum Dots with High Areal Dot Density

K. Makihara, H. Deki, M. Ikeda, 2011 .

Raman and Ft‐Ir Study on Structure and Its Stability of Hydrogenated Amorphous Germanium‐Nitrogen Alloys

S. Miyazaki, Jun Xu, Kunji Chen, 1996 .

Low-temperature formation of Ga-oxide/GaN interface with remote oxygen plasma and its interface properties

N. Taoka, M. Shimizu, K. Makihara, 2018 .

Preparation of hydrogenated amorphous germanium nitrogen alloys by plasma enhanced chemical vapor deposition

S. Miyazaki, Jun Xu, Kunji Chen, 1996 .

Ultrathin gate dielectrics for silicon nanodevices

Khairurrijal, W. Mizubayashi, K. Shibahara, 2000 .

Layer-by-Layer Oxidation of Silicon

S. Miyazaki, T. Yasaka, M. Takakura, 1991 .

Correlation between Light-Induced Degradation and Structural Inhomogeneities in Hydrogenated Amorphous Silicon Prepared under High-Rate Deposition Conditions

S. Miyazaki, M. Hirose, Nobuki Sakikawa, 1998 .

Structural Inhomogeneity in Hydrogenated Amorphous Silicon in Relation to Photoelectric Properties and Defect Density

S. Miyazaki, M. Hirose, Nobuki Sakikawa, 1999 .

Deposition of Hydrogenated Amorphous Silicon under Intermittent Substrate Bias

S. Miyazaki, M. Hirose, Nobuki Sakikawa, 1998 .

Infrared Spectra of Ultra-Thin SiO2 Grown on Si Surfaces

S. Miyazaki, M. Hirose, C. Bjorkman, 1993 .

Laser-induced hydrogen desorption from polysilane and its application to silicon pattern generation

S. Miyazaki, M. Hirose, K. Okamoto, 1994 .

Thermalization gaps of the ultra-thin a-Si:H well layers in a-Si:H/a-Si3N4:H multilayers

S. Miyazaki, M. Hirose, K. Murayama, 1999 .

Electrically detected magnetic resonance in a‐Si:H/a‐Ge:H multilayers

Carlos Frederico de Oliveira Graeff, M. Stutzmann, S. Miyazaki, 1996 .

Morphological fluctuations in discharge-produced μc-Si:H studied by small angle X-ray scattering

S. Miyazaki, M. Hirose, Y. Ōsaka, 1983 .

Transient Characteristics of Electron Charging in Si-Quantum-Dot Floating Gate MOS Memories

M. Ikeda, S. Miyazaki, A. Kohno, 2000 .

Optically Interconnected Kohonen Net for Pattern Recognition

Atsushi Iwata, Shin Yokoyama, Makoto Nagata, 1995 .

High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits

K. Shibahara, N. Dietz, S. Miyazaki, 1996 .

Effects of inserting ultrathin TaOx layer in Pt/TiO2 interface on resistive switching characteristics

S. Higashi, S. Miyazaki, Y. Goto, 2011, 2011 International Meeting for Future of Electron Devices.

Composition dependence of surface morphology of ultrathin a-SiGe:H alloys studying by atomic force microscopy

S. Miyazaki, Jun Xu, Kunji Chen, 1998 .

High-quality hydrogenated amorphous silicon-germanium alloys for narrow bandgap thin film solar cells

S. Miyazaki, Jun Xu, M. Hirose, 1996 .

Effect of hydrogen plasma for obtaining high quality a-SiGe:H alloys

S. Miyazaki, Jun Xu, Kunji Chen, 1996 .

Real-Time Monitoring of Surface Reactions during Plasma-Enhanced CVD of Silicon

S. Miyazaki, Masataka Hirose Masataka Hirose, H. Shin, 1995 .

Infrared attenuated-total-reflection spectroscopy of microcrystalline silicon growth

S. Miyazaki, M. Hirose, Y. Okazaki, 2000 .

Surface-sensitive Raman scattering study on a-Si:H network formation process during deposition and H2 plasma annealing

Nobuki Fukuhara, S. Miyazaki, M. Hirose, 2000 .

Insights into surface reactions during a-SiGe:H deposition and hydrogen plasma annealing as obtained from infrared attenuated total reflection spectroscopy

S. Miyazaki, M. Hirose, Y. Yoshida, 1998 .

In Situ Monitoring of Silicon Surfaces During Reactive Ion Etching

S. Miyazaki, M. Hirose, Nobuki Sakikawa, 1998 .

Surface Morphologies of Hydrogenated Amorphous Silicon at the Early Stages of Plasma-Enhanced Chemical Vapor Deposition

H. Deki, S. Miyazaki, M. Fukuda, 1995 .

Radical- and Ion-Induced Reactions on Plasma-Deposited Silicon Surfaces

S. Miyazaki, Masataka Hirose Masataka Hirose, Yoshihiro Kiriki, 1991 .

High Quality a-SiGe:H Alloys Prepared by Nanometer Deposition/H2 Plasma Annealing Method

S. Miyazaki, Jun Xu, Masataka Hirose Masataka Hirose, 1995 .

Device-grade a-SiGe:H alloys prepared by nanometer deposition/H2 plasma annealing method

S. Miyazaki, Jun Xu, Kunji Chen, 1996 .

Effects of growth rate on the microcrystalline characteristics of plasma-deposited μc-Si:H

S. Miyazaki, M. Hirose, Y. Ōsaka, 1984 .

Growth kinetics of amorphous and microcrystalline silicon studied by using radical beam

S. Miyazaki, M. Hirose, H. Hirata, 1985 .

Atomic layer growth of silicon by excimer laser induced cryogenic chemical vapor deposition

Seiichi Miyazaki, Masataka Hirose, Y. Nagasawa, 1990 .

Self-Assembling Formation of Silicon Quantum Dots by Low Pressure Chemical Vapor Deposition

S. Miyazaki, M. Hirose, M. Fukuda, 1996 .

Characterization of Multistep Electron Charging and Discharging of a Silicon Quantum Dots Floating Gate by Applying Pulsed Gate Biases

M. Ikeda, S. Higashi, S. Miyazaki, 2007 .

Self-assembling formation of silicon quantum dots with a germanium core by low-pressure chemical vapour deposition

S. Miyazaki, Y. Darma, H. Murakami, 2003 .

Control of the positioning of self-assembling Si quantum dots on ultrathin SiO/sub 2//c-Si by using scanning probe

M. Ikeda, S. Miyazaki, M. Hirose, 2001, Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468).

Nucleation Site Control in Self-Assembling Si Quantum Dots on Ultrathin SiO2/c-Si

M. Ikeda, S. Miyazaki, M. Hirose, 2001 .

Nano spin-diodes using FePt-NDs with huge on/off current ratio at room temperature

K. Makihara, M. Ikeda, S. Miyazaki, 2016, Scientific Reports.

Contribution of Carbon to Growth of Boron-Containing Cluster in Heavily Boron-Doped Silicon

M. Ikeda, S. Miyazaki, I. Mizushima, 2010 .

Characterization of plasma-deposited microcrystalline silicon

Shuichi Miyazaki, Y. Mishima, Yukio Osaka, 1982 .

Low temperature high-rate growth of crystalline Ge films on quartz and crystalline Si substrates from VHF inductively-coupled plasma of GeH4

K. Makihara, H. Deki, S. Higashi, 2008 .

Formation of microcrystalline germanium (μc-Ge:H) films from inductively coupled plasma CVD

K. Makihara, S. Higashi, S. Miyazaki, 2005 .

Quantum confinement effect in self-assembled, nanometer silicon dots

M. Ikeda, S. Miyazaki, M. Hirose, 1998 .

Resonant tunneling through a self-assembled Si quantum dot

S. Miyazaki, M. Hirose, M. Fukuda, 1997 .

Atomic Scale Morphology of Hydrogen-Terminated Si(100) Surfaces Studied by Fourier-Transform Infrared Attenuated Total Reflection Spectroscopy and Scanning Probe Microscopies

S. Miyazaki, M. Hirose, C. Bjorkman, 1995 .

Characterization of ultrathin zirconium oxide films on silicon using photoelectron spectroscopy

M. Ogasawara, S. Miyazaki, M. Hirose, 2001 .

Influence of thermal annealing on compositional mixing and crystallinity of highly selective grown Si dots with Ge core

S. Miyazaki, Y. Darma, H. Murakami, 2004 .

Room Temperature Light Emission from Superatom-like Ge–Core/Si–Shell Quantum Dots

N. Taoka, B. Tillack, M. Schubert, 2023, Nanomaterials.

Progress in determination method for ultrathin Si-based oxide bandgaps from analysis of energy loss signals for photoelectrons

K. Makihara, S. Miyazaki, H. Murakami, 2015 .

Characterization of Mg Diffusion into HfO2/SiO2/Si(100) Stacked Structures and Its Impact on Detect State Densities

Seiichiro Higashi, Seiichi Miyazaki, Akio Ohta, 2011, IEICE Trans. Electron..

Influence of BHF Treatments on Hydrogen-Terminated Si(100) Surfaces

T. Osada, S. Miyazaki, S. Miyazaki, 1997 .

Electronic Structure of Photochemically Etched Silicon Surfaces

S. Miyazaki, M. Hirose, T. Hayashi, 1988 .

Near‐surface dopant passivation after wet‐chemical preparation

L. Ley, J. Ristein, S. Miyazaki, 1996 .

Atomic Scale Flatness of Chemically Cleaned Silicon Surfaces Studied by Infrared Attenuated-Total-Reflection Spectroscopy

S. Miyazaki, M. Hirose, K. Sawara, 1992 .

Evaluation of Plasma-Induced Damage by Medium-Energy Ion Scattering

S. Miyazaki, Z. Radzimski, M. Hirose, 1994 .

Nanometer‐scale field‐induced oxidation of Si(111):H by a conducting‐probe scanning force microscope: Doping dependence and kinetics

L. Ley, S. Miyazaki, M. Hundhausen, 1995 .

Characterization of Metal/High-k Structures Using Monoenergetic Positron Beams

A. Uedono, T. Chikyow, N. Umezawa, 2007 .

Introduction of defects into HfO2 gate dielectrics by metal-gate deposition studied using x-ray photoelectron spectroscopy and positron annihilation

A. Uedono, T. Chikyow, N. Umezawa, 2006 .

Characterization of HfSiON gate dielectrics using monoenergetic positron beams

A. Uedono, T. Chikyow, N. Umezawa, 2006 .

Vacancy-fluorine complexes and their impact on the properties of metal-oxide transistors with high-k gate dielectrics studied using monoenergetic positron beams

A. Uedono, K. Yamada, T. Aoyama, 2007 .

Crystallization of Si films on glass substrate using thermal plasma jet

S. Higashi, S. Miyazaki, H. Murakami, 2005 .

Formation mechanism of metal nanodots induced by remote plasma exposure

K. Makihara, M. Ikeda, S. Higashi, 2010 .

Growth of crystallized Ge films from VHF inductively-coupled plasma of H2-diluted GeH4

K. Makihara, S. Higashi, S. Miyazaki, 2007 .

The application of very high frequency inductively coupled plasma to high-rate growth of microcrystalline silicon films

S. Miyazaki, Nihan Kosku, 2006 .

New findings in nano-scale interface physics and their relations to nano-CMOS technologies

T. Chikyow, K. Shiraishi, H. Watanabe, 2006, 2006 International Workshop on Nano CMOS.

High‐fluidity chemical vapor deposition of silicon dioxide

H. Shin, S. Miyazaki, M. Hirose, 1992 .

Diffusion and incorporation of Zr into thermally grown SiO2 on Si(1 0 0)

S. Miyazaki, H. Murakami, Masanori Yamaoka, 2003 .

Threshold voltage fluctuation induced by direct tunnel leakage current through 1.2-2.8 nm thick gate oxides for scaled MOSFETs

T. Ono, K. Iwamoto, T. Mihara, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

Photoelectron spectroscopy of ultrathin Yttrium Oxide films on Si(100)

S. Miyazaki, A. Ohta, Masanori Yamaoka, 2004 .

Activation of As Atoms in Ultrashallow Junction during Milli- and Microsecond Annealing Induced by Thermal-Plasma-Jet Irradiation

S. Higashi, S. Miyazaki, Kazuya Matsumoto, 2011 .

Activation of B and As in Ultrashallow Junction During Millisecond Annealing Induced by Thermal Plasma Jet Irradiation

S. Higashi, S. Miyazaki, Kazuya Matsumoto, 2010 .

Millisecond Rapid Thermal Annealing of Si Wafer Induced by High-Power-Density Thermal Plasma Jet Irradiation and Its Application to Ultrashallow Junction Formation

S. Higashi, S. Miyazaki, T. Okada, 2009 .

In-situ Measurement of Temperature Variation in Si Wafer during Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation

S. Higashi, S. Miyazaki, T. Okada, 2008 .

In-situ Monitoring of Si Wafer Temperature during Millisecond Rapid Thermal Annealing

S. Higashi, S. Miyazaki, T. Okada, 2008 .

Charge Storage and Optical Response of Hybrid Nanodots Floating Gate For Functional Memories

K. Makihara, M. Ikeda, S. Miyazaki, 2009 .

Insights into the high-rate growth of highly crystallized silicon films from inductively coupled plasma of H2-diluted SiH4

S. Miyazaki, Nihan Kosku, 2006 .

Crystallization of amorphous Ge films induced by semiconductor diode laser annealing

K. Sakaike, S. Higashi, S. Miyazaki, 2008 .

Influence of substrate dc bias on crystallinity of silicon films grown at a high rate from inductively-coupled plasma CVD

S. Higashi, S. Miyazaki, H. Murakami, 2005 .

Activation mechanism of TiOx passivating layer on crystalline Si

Y. Kurokawa, N. Usami, S. Miyazaki, 2018, Applied Physics Express.

X-Ray Photoemission Study of SiO2/Si/Si0.55Ge0.45/Si Heterostructures

Seiichi Miyazaki, Katsunori Makihara, Masao Sakuraba, 2013, IEICE Trans. Electron..

Wide-Gap Polysilane Produced by Plasma-Enhanced CVD at Cryogenic Temperatures

H. Shin, S. Miyazaki, M. Hirose, 1992 .

Photoluminescence decay in a-Si: H/a-Si3N4: H multilayers

S. Miyazaki, K. Murayama, A. Yamaguchi, 1989 .

Luminescence of Amorphous Silicon Superlattices

S. Miyazaki, M. Hirose, Naoki Murayama, 1985 .

Temperature Dependence of Electron Tunneling between Two Dimensional Electron Gas and Si Quantum Dots

T. Endoh, K. Shiraishi, Y. Shigeta, 2010 .

Determination of Band Discontinuity in Amorphous Silicon Heterojunctions

S. Miyazaki, M. Hirose, T. Hayashi, 1988 .

Evaluation of charge trapping properties of microcrystalline germanium thin films by Kelvin force microscopy

K. Makihara, H. Deki, M. Ikeda, 2012 .

Crystallization of Si in Millisecond Time Domain Induced by Thermal Plasma Jet Irradiation

Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki, 2006 .

Formation and characterization of high-density FeSi nanodots on SiO2 induced by remote H2 plasma

K. Makihara, M. Ikeda, S. Miyazaki, 2015 .

Evaluation of resistive switching properties of Si-rich oxide embedded with Ti nanodots by applying constant voltage and current

K. Makihara, M. Ikeda, S. Miyazaki, 2018 .

Impact of embedded Mn nanodots on resistive switching characteristics of Si-rich oxides as measured in Ni-electrode metal–insulator–metal diodes

T. Arai, K. Makihara, S. Miyazaki, 2016 .

Resistance-Switching Characteristics of Si-rich Oxide Evaluated by Using Ni Nanodots as Electrodes in Conductive AFM Measurements

Chong Liu, Seiichi Miyazaki, Katsunori Makihara, 2015, IEICE Trans. Electron..

Effect of electric field concentration using nanopeak structures on the current–voltage characteristics of resistive switching memory

T. Shimizu, S. Shingubara, K. Makihara, 2014 .

Characterization of Resistive Switching Behaviors of RF Sputtered Si Oxide Resistive Random Access Memories with Ti-Based Electrodes

K. Makihara, S. Higashi, S. Miyazaki, 2013 .

Characterization of Resistive Switching of Pt/Si-Rich Oxide/TiN System

Seiichi Miyazaki, Katsunori Makihara, Akio Ohta, 2013, IEICE Trans. Electron..

Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior

Seiichiro Higashi, Seiichi Miyazaki, Mitsuhisa Ikeda, 2013, IEICE Trans. Electron..

Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering

Seiichiro Higashi, Seiichi Miyazaki, Akio Ohta, 2012, IEICE Trans. Electron..

Impact of Annealing Ambience on Resistive Switching in Pt/TiO2/Pt Structure

Seiichiro Higashi, Seiichi Miyazaki, Katsunori Makihara, 2011, IEICE Trans. Electron..

Formation of Low-Defect-Concentration Polycrystalline Silicon Films by Thermal Plasma Jet Crystallization Technique

A. Masuda, M. Kondo, S. Higashi, 2008 .

Formation of Nanometer Silicon Dots with Germanium Core by Highly-Selective Low-Pressure Chemical Vapor Deposition

S. Miyazaki, Y. Darma, H. Murakami, 2002, 2002 International Microprocesses and Nanotechnology Conference, 2002. Digest of Papers..

Digital chemical vapor deposition and etching technologies for semiconductor processing

Seiichi Miyazaki, Haruo Shindo, Yasuhiro Horiike, 1990 .

Evaluation of energy distribution of filled defects of Si oxide thin films from total photoelectron yield spectroscopy

K. Makihara, M. Ikeda, S. Miyazaki, 2017 .

Anomalous temperature dependence of electron tunneling between a two-dimensional electron gas and Si dots

K. Shiraishi, Y. Shigeta, K. Makihara, 2010 .

Memory Operation of Silicon Quantum-Dot Floating-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

Hideki Murakami, Seiichi Miyazaki, Mitsuhisa Ikeda, 2001 .

Quantitative Analysis of Tunneling Current through Ultrathin Gate Oxides

Seiichi Miyazaki, Masataka Hirose, J. L. Alay, 1995 .

Cathode Electron Injection Breakdown Model and Time Dependent Dielectric Breakdown Lifetime Prediction in High-k/Metal Gate Stack p-Type Metal–Oxide–Silicon Field Effect Transistors

K. Shiraishi, K. Yamabe, T. Aoyama, 2008 .

Characterization of high-k gate dielectric/silicon interfaces

Seiichi Miyazaki, S. Miyazaki, 2002 .

Effects of remote hydrogen plasma on chemical bonding features and electronic states of 4H-SiC(0001) surface

K. Makihara, M. Ikeda, S. Miyazaki, 2016 .

Surface Fermi level position of hydrogen passivated Si(111) surfaces

L. Ley, J. Ristein, S. Miyazaki, 1996 .

Electron field emission from a silicon subsurface based on a generalized Airy function approach

Khairurrijal, S. Miyazaki, M. Hirose, 1999 .

Physics of Metal/High-k Interfaces

T. Chikyow, N. Umezawa, K. Shiraishi, 2006 .

Characterization of interfacial reaction and chemical bonding features of LaOx/HfO2 stack structure formed on thermally-grown SiO2/Si(100)

S. Higashi, S. Miyazaki, H. Murakami, 2009 .

Chemical and electronic structure of ultrathin zirconium oxide films on silicon as determined by photoelectron spectroscopy

M. Ogasawara, S. Miyazaki, M. Hirose, 2002 .

Study of Electron Transport Characteristics through Self-Aligned Si-Based Quantum Dots

K. Makihara, M. Ikeda, S. Miyazaki, 2012, 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM).

Self-Align Formation of Si Quantum Dots

K. Makihara, H. Deki, M. Ikeda, 2010 .

Nucleation Control for High Density Formation of Si-based Quantum Dots on Ultrathin SiO2

K. Makihara, M. Ikeda, S. Higashi, 2008 .

Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots

K. Makihara, H. Deki, S. Higashi, 2007 .

Multiple-Step Electron Charging in Silicon-Quantum-Dot Floating Gate Metal-Oxide-Semiconductor Memories

M. Ikeda, S. Miyazaki, H. Murakami, 2003 .

Improved FET characteristics by laminate design optimization of metal gates - Guidelines for optimizing metal gate stack structure -

M. Sato, N. Mise, K. Shiraishi, 2008, 2008 Symposium on VLSI Technology.

Characterization of chemical bonding features and defect state density in HfSiOx Ny /SiO2 gate stack

S. Inumiya, K. Makihara, S. Higashi, 2007 .

Processing and characterization of Si/Ge quantum dots

K. Makihara, M. Ikeda, S. Miyazaki, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Temperature dependence of capacitance of Si quantum dot floating gate MOS capacitor

K. Shiraishi, K. Makihara, M. Ikeda, 2009 .

Characterization of Interfaces between Chemically Cleaned or Thermally Oxidized Germanium and Metals

S. Higashi, S. Miyazaki, H. Murakami, 2010 .

Hafnium 4f Core-level Shifts Caused by Nitrogen Incorporation in Hf-based High-k Gate Dielectrics

T. Chikyow, N. Umezawa, K. Shiraishi, 2007 .

Amorphous silicon superlattices prepared by direct photochemical deposition

S. Miyazaki, M. Hirose, 1989 .

Band Offset in Boron-Doped Amorphous Silicon Heterostructures

S. Miyazaki, M. Hirose, T. Hayashi, 1988 .

Quantum wells and superlattices

S. Miyazaki, M. Hirose, 1987 .

Application of remote hydrogen plasma to selective processing for Ge-based devices: Crystallization, etching, and metallization

K. Makihara, M. Ikeda, S. Miyazaki, 2014 .

Excitation Time Dependence of Luminescence Decay in Thermally Oxidized Porous Si

S. Miyazaki, M. Hirose, K. Shiba, 1994 .

Collective Tunneling Model in Charge-Trap-Type Nonvolatile Memory Cell

T. Endoh, K. Shiraishi, Y. Shigeta, 2011 .

High‐Speed GaAs Epitaxial Lift‐Off and Bonding with High Alignment Accuracy Using a Sapphire Plate

Shin Yokoyama, Seiichi Miyazaki, Masataka Hirose, 1999 .

Formation of High Crystallinity Silicon Films by High Speed Scanning of Melting Region Formed by Atmospheric Pressure DC Arc Discharge Micro-Thermal-Plasma-Jet and Its Application to Thin Film Transistor Fabrication

S. Hayashi, S. Higashi, S. Miyazaki, 2010 .

Growth Kinetics of Silicon Thin Film Studied by Hydrogen Radical and Ion Irradiation

S. Miyazaki, M. Hirose, Yoshihiro Kiriki, 1989 .

Photoelectron yield spectroscopy of electronic states at ultrathin SiO 2 /Si interfaces

S. Miyazaki, A. Kohno, M. Hirose, 1999 .

Characterization of silicon surface microroughness and tunneling transport through ultrathin gate oxide

S. Miyazaki, T. Yasaka, M. Hirose, 1994 .

High-density formation of Ta nanodot induced by remote hydrogen plasma

K. Makihara, M. Ikeda, S. Miyazaki, 2015 .

Determination of Energy Band Alignment in Ultrathin Hf-based Oxide/Pt System

S. Higashi, S. Miyazaki, H. Murakami, 2013 .

Study of high-k gate dielectrics by means of positron annihilation

A. Uedono, T. Chikyow, N. Umezawa, 2007 .

Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor

Tetsuo Endoh, Seiichi Miyazaki, Mitsuhisa Ikeda, 2010, IEICE transactions on electronics.

Collective Tunneling Model between Two‐Dimensional Electron Gas to Si‐Nano Dot

T. Endoh, K. Shiraishi, Y. Shigeta, 2011 .

Self-Assembling Formation of Ni Nanodots on SiO2 Induced by Remote H2 Plasma Treatment and Their Electrical Charging Characteristics

K. Makihara, M. Ikeda, S. Higashi, 2007 .

Suppression of anomalous threshold voltage increase with area scaling for Mg- or La-incorporated high-k/Metal gate nMISFETs in deeply scaled region

A. Uedono, T. Chikyow, M. Sato, 2010, 2010 Symposium on VLSI Technology.

Formation of germanene with free-standing lattice constant

M. Araidai, S. Miyazaki, J. Yuhara, 2023, Surface Science.

Single germanene phase formed by segregation through Al(111) thin films on Ge(111)

M. Araidai, S. Miyazaki, J. Yuhara, 2021, 2D Materials.

Optical waveguides on silicon chips

M. Koyanagi, S. Miyazaki, M. Hirose, 1995 .

Unified analytic model of direct and Fowler–Nordheim tunnel currents through ultrathin gate oxides

Seiichi Miyazaki, Khairurrijal, Masataka Hirose, 2000 .

Implication of hydrogen-induced boron passivation in wet-chemically cleaned Si(111):H

L. Ley, J. Ristein, S. Miyazaki, 1997 .

Growth of Si crystalline in SiOx films induced by millisecond rapid thermal annealing using thermal plasma jet

S. Higashi, S. Miyazaki, T. Okada, 2008 .

Tight Distribution of Dielectric Characteristics of HfSiON in Metal Gate Devices

A. Uedono, T. Chikyow, N. Umezawa, 2007 .

Photoemission study of energy band alignment and gap state density distribution for high-k gate dielectrics

S. Miyazaki, M. Hirose, 2001 .

Charge trapping by oxygen-related defects in HfO/sub 2/-based high-k gate dielectrics [MOSFETs]

A. Uedono, T. Chikyow, K. Shiraishi, 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..

Study on electroluminescence from multiply-stacking valency controlled Si quantum dots

K. Makihara, M. Ikeda, S. Miyazaki, 2014 .

Characterization of Electronic Charged States of Si-Based Quantum Dots and Their Application to Floating Gate Memories

K. Makihara, M. Ikeda, S. Miyazaki, 2006 .

High-Efficiency Micromirrors and Branched Optical Waveguides on Si Chips

K. Shibahara, S. Miyazaki, S. Yokoyama, 1995 .