J. Simon

发表

Molecular beam epitaxy of metamorphic InyGa1−yP solar cells on mixed anion GaAsxP1−x/GaAs graded buffers

P. Simmonds, M. Lee, S. Tomasulo, 2011 .

The fabrication of large-area, free-standing GaN by a novel nanoetching process

Qian Sun, M. Lee, J. Simon, 2011, Nanotechnology.

Polarization-induced Zener tunnel junctions in wide-band-gap heterostructures.

Patrick Fay, Debdeep Jena, Huili Xing, 2009 .

Polarization-Engineering in III-V Nitride Heterostructures: New Opportunities For Device Design

Patrick Fay, Debdeep Jena, Yu Cao, 2010 .

Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor Heterostructures

Debdeep Jena, Vladimir Protasenko, Huili Xing, 2010, Science.

Optical study of hot electron transport in GaN: Signatures of the hot-phonon effect

D. Jena, N. Goel, J. Simon, 2006 .

Measurements and Modeling of III-V Solar Cells at High Temperatures up to 400 ${}^{\circ}$C

M. Steiner, D. Friedman, M. Lee, 2016, IEEE Journal of Photovoltaics.

Coincident site lattice-matched InGaN on (111) spinel substrates

A. Norman, A. Ptak, J. Simon, 2012 .

(Al)GaInP/GaAs Tandem Solar Cells for Power Conversion at Elevated Temperature and High Concentration

M. Steiner, D. Friedman, M. Lee, 2018, IEEE Journal of Photovoltaics.

Hot phonons in Si-doped GaN

D. Jena, H. Xing, N. Goel, 2006 .

Effect of growth conditions on the conductivity of Mg doped p‐type GaN by Molecular Beam Epitaxy

D. Jena, J. Simon, 2008 .

Effect of dislocation scattering on the transport properties of InN grown on GaN substrates by molecular beam epitaxy

J. Merz, D. Jena, T. Kosel, 2006 .

Near-field transport imaging applied to photovoltaic materials

B. Gorman, N. Haegel, S. Johnston, 2017 .

Increased fracture depth range in controlled spalling of (100)-oriented germanium via electroplating

C. Packard, Dustin R. Crouse, D. Young, 2018 .

III–V Solar Cells Grown on Unpolished and Reusable Spalled Ge Substrates

C. Packard, Dustin R. Crouse, S. Johnston, 2018, IEEE Journal of Photovoltaics.

Carrier transport and confinement in polarization-induced three-dimensional electron slabs: Importance of alloy scattering in AlGaN

D. Jena, H. Xing, S. Rajan, 2006 .

Growth of metamorphic GaAsP solar cells on GaP

S. Tomasulo, J. Simon, K. N. Yaung, 2012, 2012 38th IEEE Photovoltaic Specialists Conference.

Gallium arsenide solar cells grown at rates exceeding 300 µm h−1 by hydride vapor phase epitaxy

S. Johnston, A. Ptak, J. Simon, 2019, Nature Communications.

Tunnel Junction Development Using Hydride Vapor Phase Epitaxy

A. Ptak, N. Jain, J. Simon, 2018, IEEE Journal of Photovoltaics.

Development of GaInP Solar Cells Grown by Hydride Vapor Phase Epitaxy

C. Packard, B. Gorman, A. Ptak, 2017, IEEE Journal of Photovoltaics.

Identification of the limiting factors for high-temperature GaAs, GaInP, and AlGaInP solar cells from device and carrier lifetime analysis

M. Steiner, D. Friedman, D. Kuciauskas, 2017 .

AlGaInP/GaAs Tandem Solar Cells for Power Conversion at 400°C and 1000X Concentration

M. Steiner, D. Friedman, M. Lee, 2017 .

GaN and InGaN Nanowires on Si Substrates by Ga-Droplet Molecular Beam Epitaxy

D. Jena, T. Kosel, J. Simon, 2008 .

InGaAsP solar cells grown by hydride vapor phase epitaxy

D. Young, A. Ptak, N. Jain, 2016, 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).

Polarization-engineered N-face III–V nitride quantum well LEDs

D. Jena, V. Protasenko, J. Simon, 2010, 68th Device Research Conference.

Polarization-Induced 3-Dimensional Electron Slabs in Graded AlGaN Layers

D. Jena, H. Xing, S. Rajan, 2005 .

Computational fluid dynamics-aided analysis of a hydride vapor phase epitaxy reactor

R. Reedy, T. Kuech, D. Young, 2016 .

Thin, high quality GaInP compositionally graded buffer layers grown at high growth rates for metamorphic III–V solar cell applications

J. Geisz, I. García, J. Simon, 2014 .

Growth of Metamorphic InGaP for Wide-Bandgap Photovoltaic Junction by MBE

P. Simmonds, M. Lee, M. Romero, 2010 .

Measurements and modeling of III-V solar cells at high temperatures up to 400°C

M. Steiner, D. Friedman, M. Lee, 2017, 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).

High growth rate hydride vapor phase epitaxy at low temperature through use of uncracked hydrides

A. Ptak, J. Simon, K. Schulte, 2018 .

Controlled exfoliation of (100) GaAs-based devices by spalling fracture

C. Packard, M. Steiner, D. Young, 2016 .

Effect of material choice on spalling fracture parameters to exfoliate thin PV devices

C. Packard, D. Young, A. Ptak, 2014, 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC).

Germanium-on-Nothing for Epitaxial Liftoff of GaAs Solar Cells

Jihun Oh, D. Young, A. Ptak, 2019, Joule.

Reformed Mesoporous Ge for Substrate Reuse in III-V Solar Cells

C. Packard, D. Young, A. Ptak, 2019, 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC).

Tunable Bandgap GaInAsP Solar Cells With 18.7% Photoconversion Efficiency Synthesized by Low-Cost and High-Growth Rate Hydride Vapor Phase Epitaxy

C. Packard, D. Friedman, D. Young, 2018, IEEE Journal of Photovoltaics.

III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy

D. Young, A. Ptak, J. Simon, 2018, Crystals.

Metamorphic GaAsP buffers for growth of wide-bandgap InGaP solar cells

M. Lee, P. Simmonds, M. Romero, 2011 .

Compositionally graded Ga1−xInxP buffers grown by static and dynamic hydride vapor phase epitaxy at rates up to 1 μm/min

C. Packard, H. Guthrey, A. Ptak, 2021 .

GaAsP solar cells on GaP substrates by molecular beam epitaxy

M. Lee, S. Tomasulo, J. Simon, 2012 .

Metamorphic InGaP on GaAs and GaP for wide-bandgap photovoltaic junctions

P. Simmonds, M. Romero, S. Tomasulo, 2010, 2010 35th IEEE Photovoltaic Specialists Conference.

N-polar III-nitride quantum well light-emitting diodes with polarization-induced doping

Huili Grace Xing, Debdeep Jena, Vladimir Protasenko, 2011 .

Analysis of Crystalline Defects Caused by Growth on Partially Planarized Spalled (100) GaAs Substrates

C. Packard, M. Steiner, H. Guthrey, 2023, Crystals.

Lattice-Mismatched 0.7-eV GaInAs Solar Cells Grown on GaAs Using GaInP Compositionally Graded Buffers

D. Friedman, W. McMahon, A. Norman, 2014, IEEE Journal of Photovoltaics.

Development of a 2.0 eV AlGaInP solar cell grown by OMVPE

M. Steiner, D. Friedman, J. Geisz, 2015, 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC).

High Performance GaAs Solar Cells Grown at High Growth Rates by Atmospheric-Pressure Dynamic Hydride Vapor Phase Epitaxy

A. Ptak, J. Simon, W. Metaferia, 2019, 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC).

Upright and Inverted Single-Junction GaAs Solar Cells Grown by Hydride Vapor Phase Epitaxy

M. Young, D. Young, A. Ptak, 2017, IEEE Journal of Photovoltaics.

A kinetic model for GaAs growth by hydride vapor phase epitaxy

D. Young, A. Ptak, N. Jain, 2016, 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).

Control of Surface Morphology during the Growth of (110)-Oriented GaAs by Hydride Vapor Phase Epitaxy

C. Packard, A. Ptak, J. Simon, 2021 .

GaAs growth rates of 528 μm/h using dynamic-hydride vapor phase epitaxy with a nitrogen carrier gas

A. Ptak, J. Simon, W. Metaferia, 2020 .

Kinetically limited growth of GaAsBi by molecular-beam epitaxy

A. Mascarenhas, A. Ptak, J. Simon, 2012 .

AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance

Yu Cao, D. Jena, P. Fay, 2008, IEEE Electron Device Letters.

Patterning Metal Grids for GaAs Solar Cells with Cracked Film Lithography: Quantifying the Cost/Performance Tradeoff.

L. Mansfield, A. Ptak, C. Muzzillo, 2020, ACS applied materials & interfaces.

Growth of AlGaAs, AlInP, and AlGaInP by Hydride Vapor Phase Epitaxy

A. Ptak, J. Simon, W. Metaferia, 2019 .

Graphitized carbon on GaAs(100) substrates

M. Lee, J. Woodall, P. Simmonds, 2011 .

Molecular beam epitaxy approach to the graphitization of GaAs(100) surfaces

M. Lee, J. Woodall, P. Simmonds, 2011 .

GaAs solar cells grown on intentionally contaminated GaAs substrates

M. Steiner, M. Young, A. Ptak, 2020, 2020 47th IEEE Photovoltaic Specialists Conference (PVSC).

Thermal stability of GaAs solar cells for high temperature applications

M. Steiner, D. Friedman, M. Vaisman, 2016, 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC).

Polarization-induced zener tunnel junctions in wide-bandgap heterostructures

Ze Zhang, D. Jena, P. Fay, 2009, 2009 Device Research Conference.

Development of High-Bandgap AlGaInP Solar Cells Grown by Organometallic Vapor-Phase Epitaxy

John F. Geisz, Myles A. Steiner, Daniel J. Friedman, 2016, IEEE Journal of Photovoltaics.

Short‐period AlN/GaN p‐type superlattices: hole transport use in p‐n junctions

Yu Cao, D. Jena, J. Simon, 2010 .

Low-cost III–V solar cells grown by hydride vapor-phase epitaxy

D. Young, A. Ptak, J. Simon, 2014, 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC).

AlInP‐passivated III–V solar cells grown by dynamic hydride vapor‐phase epitaxy

M. Young, A. Ptak, J. Simon, 2022, Progress in Photovoltaics: Research and Applications.

Modeling and design of III-V heterojunction solar cells for enhanced performance

M. Steiner, A. Ptak, J. Simon, 2023, Cell Reports Physical Science.

Low cost GaAs solar cells grown by hydride vapor phase epitaxy and the development of GaInP cladding layers

D. Young, A. Ptak, J. Simon, 2015, 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC).

GaAs Solar Cells Grown by Hydride Vapor-Phase Epitaxy and the Development of GaInP Cladding Layers

N. Haegel, D. Young, A. Ptak, 2016, IEEE Journal of Photovoltaics.

Dopant Diffusion Control for Improved Tandem Cells Grown by D-HVPE

M. Young, A. Ptak, J. Simon, 2021, IEEE Journal of Photovoltaics.

Demonstration of passivation using a low-temperature-grown, Al-containing window layer by HVPE

A. Ptak, J. Simon, W. Metaferia, 2020, Photovoltaic Specialists Conference.

Multijunction Ga0.5In0.5P/GaAs solar cells grown by dynamic hydride vapor phase epitaxy

A. Ptak, J. Simon, K. Schulte, 2018, Progress in Photovoltaics: Research and Applications.

AlGaInP/GaAs tandem solar cells for power conversion at 400°C and high concentration

Nikhil Jain, Myles A. Steiner, Daniel J. Friedman, 2017 .

Uniformity of GaAs solar cells grown in a kinetically-limited regime by dynamic hydride vapor phase epitaxy

A. Ptak, J. Simon, W. Metaferia, 2019, Solar Energy Materials and Solar Cells.

Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations

H. Sitaraman, A. Ptak, J. Simon, 2021, Journal of Applied Physics.

Effect of hydride vapor phase epitaxy growth conditions on the degree of atomic ordering in GaInP

C. Packard, A. Ptak, J. Simon, 2020 .

Analysis of GaAs Solar Cells Grown on 50 mm Wafers at 700 °C by Dynamic Hydride Vapor Phase Epitaxy

A. Ptak, J. Simon, W. Metaferia, 2019, 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC).

Improvement of Short-Circuit Current Density in GaInP Solar Cells Grown by Dynamic Hydride Vapor Phase Epitaxy

M. Young, A. Ptak, J. Simon, 2018, IEEE Journal of Photovoltaics.

GaLnAsP Solar Cells Grown by Hydride Vapor Phase Epitaxy for One-Sun & Low-Concentration III-V/Si Photovoltaics

C. Packard, D. Young, A. Ptak, 2017, 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).

Light-trapping structures fabricated in situ for ultrathin III-V solar cells

C. Packard, A. Ptak, J. Simon, 2023, Journal of Applied Physics.

InGaN Nanowires on Si Substrates by Ga-Droplet Molecular Beam Epitaxy

D. Jena, T. Kosel, J. Simon, 2008 .

Analysis of GaInP Solar Cells Grown by Hydride Vapor Phase Epitaxy

D. Young, A. Ptak, J. Simon, 2017 .

Control of CuPt ordering in GaInP grown by hydride vapor phase epitaxy

C. Packard, A. Ptak, J. Simon, 2020, Photovoltaic Specialists Conference.

Toward Low-Cost 4-Terminal GaAs//Si Tandem Solar Cells

A. Tamboli, E. Warren, J. Geisz, 2019, ACS Applied Energy Materials.