G. Fan

发表

Study of GaP single crystal layers grown on GaN by MOCVD

Shuti Li, Chao Liu, Yong Zhang, 2011 .

Shuti Li, Chao Liu, Jun Su, 2010 .

Investigation of AlGaN-based deep-ultraviolet light-emitting diodes with composition-varying AlGaN multilayer barriers

Yong Zhang, G. Fan, Yi’an Yin, 2014 .

The influence of thermal annealing to the characteristics of AlGaInP/GaInP multiple quantum wells light-emitting diode wafers

Shuti Li, Guanghan Fan, Shuwen Zheng, 2008, Microelectron. J..

Metamorphosis of InP self-organized islands and the two-dimensional distribution modified by mismatched GaInP buffer layers

Song-hao Liu, Jiye Cai, G. Zeng, 2004 .

Performance enhancement of blue light-emitting diodes without an electron-blocking layer by using special designed p-type doped InGaN barriers.

G. Fan, Yi’an Yin, Yun-yan Zhang, 2012, Optics express.

First-principles study of Mg incorporation at wurtzite InN (0 0 0 1) and (0001¯) surfaces

X. Qu, G. Fan, S. Ding, 2009 .

The static and dynamic analysis of GaN-based blue light-emitting diodes used in visible light communication

Huai-min Gu, G. Fan, Shuwen Zheng, 2019, Journal of Optics.

Advantages of deep-UV AlGaN light-emitting diodes with an AlGaN/AlGaN superlattices electron blocking layer

Shuti Li, Yong Zhang, G. Fan, 2015 .

Numerical simulation of blue InGaN light-emitting diode with gradual Al and In composition p-AlInGaN electron-blocking layer

G. Fan, Shuwen Zheng, S. Zeng, 2015, Journal of Materials Science: Materials in Electronics.

Investigation of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes with AlInGaN/AlInGaN Superlattice Electron Blocking Layer

G. Fan, Yi’an Yin, Dunnian Wang, 2019, Journal of Electronic Materials.

Electronic structures and energy band properties of Be- and S-doped wurtzite ZnO

G. Fan, Shuwen Zheng, M. He, 2014 .

A study of the mechanism of the reaction of trimethylgallium with hydrogen selenide

G. Fan, T. Ng, A. Wright, 1999 .

Thermal decomposition of di-tertiarybutyl selenide and dimethylzinc in a metalorganic vapour phase epitaxy reactor

G. Fan, D. Cole-Hamilton, T. Ng, 1997 .

Optical spectroscopy of epitaxial Ga2Se3 layers from the far infrared to the ultraviolet

D. Zahn, G. Fan, T. Ng, 1996 .

Mass-spectrometric study of the pyrolysis reactions in the MOVPE of Ga2Se3 by in-situ gas sampling

G. Fan, T. Ng, A. Wright, 1996 .

In assisted realization of p-type C-doped ZnO: A first-principles study

Jiahong Ma, G. Fan, Shuwen Zheng, 2012 .

Al composition dependency of interface phonon in the wurtzite quantum cascade laser

G. Fan, Gui-chu Chen, 2010 .

On the growth of ZnSe on (100) GaAs by atmospheric pressure movpe

G. Fan, J. O. Williams, 1985 .

Metal-organic vapor phase epitaxial growth of cubic Gallium selenide, Ga2Se3†

G. Fan, D. Cole-Hamilton, T. Ng, 1996 .

Electrical and photo-luminescence properties of ZnSe epitaxial layers grown on GaAs (100) by atmospheric pressure MOVPE: The role of substrate temperature

J. I. Davies, G. Fan, N. Maung, 1986 .

First-principles analysis on V-doped GaN

Jiahong Ma, S. Su, Shuti Li, 2012 .

MOCVD growth of MgSe thin films on GaAs substrates

G. Fan, F. Jiang, Q. Liao, 1998 .

Investigation of GaN-based light-emitting diodes using a p-GaN/i-InGaN short-period superlattice structure as last quantum barrier

G. Fan, Shuwen Zheng, Xiaoping Liu, 2013 .

Spice simulation of a large-signal model for quantum cascade laser

G. Fan, Shu Ti Li, Gui-chu Chen, 2008 .

Electronic structure and magnetism of V-doped AlN

Jiahong Ma, Yong Zhang, G. Fan, 2013 .

Advantages of GaN-Based Light-Emitting Diodes With Polarization-Reduced Chirped Multiquantum Barrier

Shuti Li, G. Fan, Yi’an Yin, 2014, IEEE Transactions on Electron Devices.

Homogeneous thermal decomposition of dimethylzinc in a metal–organic vapour phase epitaxy reactor

G. Fan, T. Ng, A. Wright, 1995 .

Study of the influence of photon recycling on extraction efficiency in a slab light-emitting diode

Tianming Zhou, Guanghan Fan, Yichen Shuai, 2007, SPIE/COS Photonics Asia.

Study of the blue luminescence in unintentional doped GaN films grown by MOCVD

Shuti Li, G. Fan, Li Wang, 2004 .

Theoretical study of BexZn1-xOBexZn1-xO alloys

G. Fan, S. Ding, Shuti Li, 2007 .

The influence of the Al pre-deposition on the properties of AlN buffer layer and GaN layer grown on Si (1 1 1) substrate

Shuti Li, Yong Zhang, Ju-Ping Huang, 2010 .

Efficiency enhancement of an InGaN light-emitting diode with a u-InGaN/AlInGaN superlattice last quantum barrier

G. Fan, Shuwen Zheng, Jian-Yong Xiong, 2015 .

Numerical Investigation of InGaN Light-Emitting Diode with Al/In-Graded p-AlGaN/InGaN Superlattice Electron-Blocking Layer

G. Fan, Shuwen Zheng, S. Zeng, 2017, Journal of Electronic Materials.

Investigation of blue InGaN light-emitting diodes with AlGaN barriers of the increasing Al composition

G. Fan, Shuwen Zheng, Jian-Yong Xiong, 2013 .

Performance improvement of GaN-based light-emitting diode with a p-InAlGaN hole injection layer

G. Fan, Shuwen Zheng, Jian-Yong Xiong, 2014 .

Improvement of Efficiency Droop in Blue InGaN Light-Emitting Diodes With p-InGaN/GaN Superlattice Last Quantum Barrier

G. Fan, Shuwen Zheng, W. Pang, 2012, IEEE Photonics Technology Letters.

Investigation of GaN-based light-emitting diodes using a p-GaN/i-InGaN short-period superlattice structure as last quantum barrier

G. Fan, Shuwen Zheng, Yi-qin Xu, 2012, Science China Technological Sciences.

Advantage of dual wavelength light-emitting diodes with dip-shaped quantum wells

G. Fan, Shuwen Zheng, Yi-qin Xu, 2012 .

Performance improvement of InGaN blue light-emitting diodes with several kinds of electron-blocking layers

G. Fan, Shuwen Zheng, W. Pang, 2012 .

Improvement of characteristics of an InGaN light-emitting diode by using a staggered AlGaN electron-blocking layer

G. Fan, Jun Chen, Yunyan Zhang, 2013 .

Investigation of blue InGaN light-emitting diodes with gradual wide wells and thin barriers

G. Fan, Shuwen Zheng, S. Zeng, 2016 .

Performance enhancement of an InGaN light-emitting diode with an AlGaN/InGaN superlattice electron-blocking layer

G. Fan, Shuwen Zheng, Yi-qin Xu, 2013 .

Performance Enhancement of Blue InGaN Light-Emitting Diodes With InGaN Barriers and Dip-Shaped Last Barrier

G. Fan, Shuwen Zheng, Jian-Yong Xiong, 2013, IEEE Transactions on Electron Devices.

Efficiency enhancement of an InGaN light-emitting diode with a p-AlGaN/GaN superlattice last quantum barrier

G. Fan, Shuwen Zheng, Jian-Yong Xiong, 2013 .

Advantages of GaN based light-emitting diodes with p-AlGaN/InGaN superlattice last quantum barrier

G. Fan, Shuwen Zheng, Yi-qin Xu, 2014 .

First-principles prediction of a new class of photovoltaic materials: I-III-IV2-V4 phosphides

Yu-Jun Zhao, Jiahong Ma, G. Fan, 2012 .

Influence of growth rate in the early stage of high temperature GaN layer growth on quality of GaN films

Jianxing Cao, Guanghan Fan, Shuwen Zheng, 2008 .

FERROMAGNETIC PROPERTIES IN V-DOPED AlN FROM FIRST PRINCIPLES

Jiahong Ma, G. Fan, Shuwen Zheng, 2012 .