Yi’an Yin

发表

Shuti Li, Chao Liu, Jun Su, 2010 .

Water-bath assisted convective assembly of aligned silver nanowire films for transparent electrodes.

Yong Zhang, Yi’an Yin, S. Duan, 2015, Physical chemistry chemical physics : PCCP.

Investigation of AlGaN-based deep-ultraviolet light-emitting diodes with composition-varying AlGaN multilayer barriers

Yong Zhang, G. Fan, Yi’an Yin, 2014 .

2.2 kV Breakdown Voltage AlGaN/GaN Schottky Barrier Diode with Polarization Doping Modulated 3D Hole Gas Cap Layer and Polarization Junction Structure

Yi’an Yin, Fengbo Liao, Keming Zhang, 2022, Journal of Electronic Materials.

Performance Analysis of GaN-Based Light-Emitting Diodes With Lattice-Matched InGaN/AlInN/InGaN Quantum-Well Barriers

Bijun Zhao, Yi’an Yin, T. Mei, 2015, Journal of Display Technology.

Enhanced photovoltaic performance of organic/silicon nanowire hybrid solar cells by solution-evacuated method.

Yong Zhang, Yi’an Yin, Bin Zhang, 2014, Optics letters.

Performance enhancement of blue light-emitting diodes without an electron-blocking layer by using special designed p-type doped InGaN barriers.

G. Fan, Yi’an Yin, Yun-yan Zhang, 2012, Optics express.

Enhanced Performance of Blue Light-Emitting Diodes With InGaN/GaN Superlattice as Hole Gathering Layer

Yugang Zhou, Chao Liu, Guowei Xiao, 2012, IEEE Photonics Technology Letters.

Improvement of Output Power of AlGaN-Based Ultraviolet Light Emitting Diodes with Sawtooth Barriers

Yi’an Yin, Dunnian Wang, Ximeng Chen, 2019, Journal of Electronic Materials.

Normally-off AlGaN/AlN/GaN HEMT with a composite recessed gate

Yi’an Yin, Fengbo Liao, Keming Zhang, 2021, Superlattices and Microstructures.

Polarization doping modulated heterojunction electron gas in AlGaN/GaN CAVETs

Yi’an Yin, Huolin Huang, Fengbo Liao, 2020, Semiconductor Science and Technology.

2.2 kV Breakdown Voltage AlGaN/GaN Schottky Barrier Diode with Polarization Doping Modulated 3D Hole Gas Cap Layer and Polarization Junction Structure

Yi’an Yin, Fengbo Liao, Keming Zhang, 2022, Journal of Electronic Materials.

A dual-gate and Γ-type field plate GaN base E-HEMT with high breakdown voltage on simulation investigation

Yong Zhang, Yi’an Yin, Fengbo Liao, 2021, Semiconductor Science and Technology.

Graded AlGaN/AlGaN Superlattice Insert Layer Improved Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Huai-min Gu, Yi’an Yin, Naiyin Wang, 2016, Journal of Display Technology.

The Effects of Polarization-Modulated Quaternary AlInGaN Barriers in Deep-UV-LED

Yi’an Yin, Jingqing Zhang, Fengbo Liao, 2021, Journal of Electronic Materials.

High quality (In)GaN films on homoepitaxial substrates

Yong Zhang, Yi’an Yin, Liu Li, 2017 .

The static and dynamic analysis of GaN-based blue light-emitting diodes used in visible light communication

Huai-min Gu, G. Fan, Shuwen Zheng, 2019, Journal of Optics.

Advantages of deep-UV AlGaN light-emitting diodes with an AlGaN/AlGaN superlattices electron blocking layer

Shuti Li, Yong Zhang, G. Fan, 2015 .

Research on the effect of gate etching depth on the performance of GaN-based HEMTs under medium source-drain etching

Yi’an Yin, Fengbo Liao, Keming Zhang, 2022, Micro and Nanostructures.

2.57GW/cm2 normally-off composite stepped gate GaN-based HEMT with p-GaN buried layer and field plate

Yi’an Yin, Fengbo Liao, Keming Zhang, 2023, Materials Science in Semiconductor Processing.

Ultraviolet light-emitting diodes with polarization-doped p-type layer

Shuti Li, Weidong Song, Ping-Li Qin, 2016 .

Investigation of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes with AlInGaN/AlInGaN Superlattice Electron Blocking Layer

G. Fan, Yi’an Yin, Dunnian Wang, 2019, Journal of Electronic Materials.

Advantages of an InGaN-based light emitting diode with a p-InGaN/p-GaN superlattice hole accumulation layer

Xingfu Wang, Shuti Li, Xin Chen, 2013 .

Effect of the thickness of undoped GaN interlayers between multiple quantum wells and the p-doped layer on the performance of GaN light-emitting diodes.

Shuti Li, Chao Liu, Guowei Xiao, 2011, Optics express.

Ultrafast, superhigh gain visible-blind UV detector and optical logic gates based on nonpolar a-axial GaN nanowire.

Chao Liu, Xingfu Wang, Shuti Li, 2014, Nanoscale.

Performance enhancement of blue light-emitting diodes with a special designed AlGaN/GaN superlattice electron-blocking layer

Yi’an Yin, Yun-Yan Zhang, Yi An Yin, 2011 .

Improved performance of near UV light-emitting diodes with a composition-graded p-AlGaN irregular sawtooth electron-blocking layer

S. Su, Shuti Li, Weidong Song, 2016 .

Advantages of GaN-Based Light-Emitting Diodes With Polarization-Reduced Chirped Multiquantum Barrier

Shuti Li, G. Fan, Yi’an Yin, 2014, IEEE Transactions on Electron Devices.

The influence of the Al pre-deposition on the properties of AlN buffer layer and GaN layer grown on Si (1 1 1) substrate

Shuti Li, Yong Zhang, Ju-Ping Huang, 2010 .

9 mV/V ultra-low DIBL of suppressing SCEs in InAlN/GaN HEMT with lattice-matched InxAlyGa(1-x-y)N back-barrier for RF device

Yi’an Yin, Keming Zhang, Mengxiao Lian, 2023, Microelectron. J..

Study of InGaN/GaN Light Emitting Diodes With Step-Graded Electron Blocking Layer

Xingfu Wang, Shuti Li, Xin Chen, 2014, IEEE Photonics Technology Letters.

Study of blue InGaN multiple quantum wells light-emitting diodes with p-type quantum barriers

Shuti Li, Jinhui Tong, Xin Chen, 2012, Asia Communications and Photonics conference and Exhibition.

Performance Enhancement of Near-UV Light-Emitting Diodes With an InAlN/GaN Superlattice Electron-Blocking Layer

Jun Ma, Yi’an Yin, Jun Ma, 2012, IEEE Electron Device Letters.

Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers

Shuti Li, Chao Liu, Guowei Xiao, 2012 .

Advantages of GaN based light-emitting diodes with a p-InGaN hole reservoir layer

Yugang Zhou, Chao Liu, Guowei Xiao, 2012 .

Blue InGaN Light-emitting Diodes with Dip-shaped Quantum Wells

Yugang Zhou, Chao Liu, Shuwen Zheng, 2011 .

The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer

Shuti Li, Chao Liu, Guowei Xiao, 2011 .

Investigations on deep ultraviolet light-emitting diodes with quaternary AlInGaN streamlined quantum barriers for reducing polarization effect

Yi’an Yin, Fengbo Liao, Kai Li, 2020 .