I. Tångring

发表

A study of the doping influence on strain relaxation of graded composition InGaAs layers grown by molecular beam epitaxy

A. Larsson, M. Sadeghi, Shumin Wang, 2009 .

Metamorphic Heterostructures and Lasers on GaAs

I. Tångring, 2008 .

Metamorphic InGaAs quantum wells for light emission at 1.3-1.6 μm

I. Buyanova, Weimin M. Chen, A. Larsson, 2007 .

1.58 mu m InGaAs quantum well laser on GaAs

A. Larsson, S. Wang, H. Ni, 2007 .

Optimization of 1.3 μm metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy

A. Larsson, M. Sadeghi, I. Tångring, 2005 .

Strong 1.3–1.6μm light emission from metamorphic InGaAs quantum wells on GaAs

A. Larsson, J. Berggren, M. Sadeghi, 2005 .

Effects of doping and grading slope on surface and structure of metamorphic InGaAs buffers on GaAs substrates

M. Sadeghi, Shumin Wang, I. Tångring, 2009 .

Metamorphic growth of 1.25–1.29 μm InGaAs quantum well lasers on GaAs by molecular beam epitaxy

A. Larsson, M. Sadeghi, I. Tångring, 2007 .

Low threshold current density 1.3 μm metamorphic InGaAs/GaAs quantum well laser diodes

Shumin Wang, H. Ni, I. Tångring, 2008 .