H. Cho

发表

Microscopic Analysis of Inherent Void Passivation in Perovskite Solar Cells

Kihong Kim, M. Nazeeruddin, Dongho Lee, 2017 .

Band alignment and defect states in amorphous GaInZnO thin films grown on SiO2/Si substrates

Jae Cheol Lee, G. Park, Kihong Kim, 2016 .

Origin of positive Vth shift and mobility effects in amorphous GaInZnO thin films

Jae Cheol Lee, G. Park, Kihong Kim, 2016 .

Fabrication and characterization of silicon-nanocrystal using platinum-nanomask

Kang L. Wang, Sejoon Lee, D. Kim, 2004 .

Metastable behavior of deep levels in hydrogenated GaAs

K. Chang, H. Cho, E. Kim, 1991 .

Electrical and optical characterization of the influence of chemical bath deposition time and temperature on CdS/Cu(In,Ga)Se2 junction properties in Cu(In,Ga)Se2 solar cells

T. Seong, J. Jeong, W. Kim, 2013 .

Full surface embedding of gold clusters on silicon nanowires for efficient capture and photothermal therapy of circulating tumor cells.

Kinam Kim, G. Park, X. Li, 2012, Nano letters.

Deep levels in GaAs grown on Si during rapid thermal annealing

H. Cho, E. Kim, Y. Kim, 1990 .

Analysis of electronic memory traps in the oxide-nitride-oxide structure of a polysilicon-oxide-nitride-oxide-semiconductor flash memory

Tae Geun Kim, K. Kim, Y. Seo, 2008 .

Defect states in amorphous SiNx:H compounds using thermally stimulated exo-electron emission

G. Park, Kihong Kim, P. Choi, 2016 .

Deep electron traps in GaAs layers grown on (100)Si substrates by metalorganic chemical vapor deposition

H. Cho, E. Kim, Y. Kim, 1990 .

GaN metal–oxide–semiconductor structures using Ga-oxide dielectrics formed by photoelectrochemical oxidation

Chan‐Jin Park, D. Shin, T. Kang, 2002 .

Hydrogenation effect on silicon on sapphire grown by rapid thermal chemical vapor deposition

H. Cho, C. J. Park, 2003 .

Enhancement of a rectifying characteristic of InGaP diodes by hydrogenation

T. Kang, H. Cho, Y. H. Kwon, 1999 .

Effect of Si-spacer thickness on optical properties of multistacked Ge quantum dots grown by rapid thermal chemical vapor deposition

Sung Kim, S. Choi, H. Cho, 2007 .

Preparation and luminescence properties of Ce3+-doped Gd5Si3O12N phosphor emerging red shift

Zhi-Jun Zhang, H. Cho, Woochul Yang, 2017 .

Large capacitance-voltage hysteresis loops in SiO2 films containing Ge nanocrystals produced by ion implantation and annealing

S. Choi, R. Elliman, H. Cho, 2006 .

Deep level transient spectroscopy in plasma-assisted molecular beam epitaxy grown Al0.2Ga0.8N/GaN interface and the rapid thermal annealing effect

Y. S. Park, Minyoung Lee, H. Im, 2010 .

Memory effects related to deep levels in metal-oxide-semiconductor structure with nanocrystalline si

Kang L. Wang, Dejun Fu, C. J. Park, 2002 .

Origin of Luminescence from Si - Implanted (1102) Al 2 O 3

S. Choi, R. Elliman, T. Kang, 2004 .

Annealing temperature dependence of capacitance-voltage characteristics in Ge-nanocrystal-based nonvolatile memory structures

Sung Kim, S. Choi, R. Elliman, 2006 .

Deep levels in undoped bulk InP after rapid thermal annealing

Young Lae Jung, H. Cho, E. Kim, 1990 .

Deep levels in Si‐ and Be‐coimplanted GaAs

H. Cho, E. Kim, S. Min, 1991 .

Defect visualization of Cu(InGa)(SeS)2 thin films using DLTS measurement

G. Park, Jong-bong Park, J. Nam, 2016, Scientific Reports.

Deep levels in Si-implanted and rapid thermal annealed semi-insulating gaAs

Ho Sub Lee, T. Kang, H. Cho, 1991, Journal of Electronic Materials.

Isothermal capacitance transient spectroscopy (ICTS) study for midgap levels in Hb-GaAs by rapid thermal annealing

H. Cho, E. Kim, S. Min, 1989 .

Abnormal behavior of midgap electron trap in HB‐GaAs during thermal annealing

H. Cho, E. Kim, S. Min, 1988 .

A relation between EL2(Ec-0.81 eV) and EL6(Ec-0.35 eV) in annealed HB-GaAs by hydrogen plasma exposure

H. Cho, E. Kim, S. Min, 1989 .

HYDROGENATION EFFECTS ON N+-P INP SOLAR CELL

H. Cho, M. Yamaguchi, W. Choi, 1994 .

Hydrogenation effects on n/sup +/-p InP solar cells

T. Takamoto, H. Cho, M. Yamaguchi, 1993, Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9).

Schottky diode characteristics and deep levels on hydrogenated n-type GaAs

H. Cho, E. Kim, S. Min, 1992 .

Effects of leakage current on isothermal capacitance transient spectroscopy signals for midgap levels in GaAs

S. Namba, H. Cho, E. Kim, 1990 .

Creation of deep levels in horizontal Bridgman‐grown GaAs by hydrogenation

Jin Jang, H. Cho, E. Kim, 1988 .

Positively charged states of a hydrogen atom in p‐type InP

H. Cho, W. Choi, S. Min, 1993 .

Electric-field-enhanced dissociation of the hydrogen-Si donor complex in GaAs

H. Cho, E. Kim, K. Chang, 1990 .

First-principles calculation the electronic structure and the optical properties of Mn-decorated g-C3N4 for photocatalytic applications

Zhi-Jun Zhang, Ki Kang Kim, H. Cho, 2016 .

Analysis of Deep-Level Defects on Proton Implanted Polycrystalline Silicon Thin Films Using Photoinduced Current Transient Spectroscopy

Y. H. Lee, D. W. Kwak, H. Cho, 2010 .

Role of Insertion Layer Controlling Wavelength in InGaAs Quantum Dots

Young Ju Park, H. Cho, E. Kim, 2001, Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468).

Behavior of deep level defects on voltage-induced stress of Cu(In,Ga)Se2 solar cells

J. Jeong, H. Cho, Dong Wha Lee, 2015 .

Hydrogenation effects on the structural and optical properties of Si+-implanted fused silica

S. Choi, H. Cho, Jung Nam Kim, 2001 .

Levitation Time Measurement of Water Drops on the Surface of Liquid Nitrogen

H. Cho, Heetae Kim, Young Hee Lee, 2011 .

Post-Annealing Effects on Fixed Charge and Slow/Fast Interface States of TiN/Al2O3/p-Si Metal–Oxide–Semiconductor Capacitor

Ho-Kyu Kang, C. Hwang, Jong-Ho Lee, 2003 .

Formation mechanism of ferromagnetism in Si1−xMnx diluted magnetic semiconductors

T. Kang, T. W. Kim, H. Cho, 2005 .

Deep Level Defects in AlxGa1-xN/GaN Heterointerfaces Grown by Molecular Beam Epitaxy

Tae Whan Kim, T. Kang, H. Cho, 2007 .

Oxygen- and photoresist-related interface states of 4H-SiC Schottky diode observed by deep-level transient spectroscopy

Sang-Mo Koo, Jeong Hyun Moon, Wook Bahng, 2017 .

Native hole traps of ferromagnetic Ga1−xMnxAs layers on (100) GaAs substrates

T. Kang, H. Cho, Dojin Kim, 2003 .

Deep level defects in Si-doped AlxGa1−xN films grown by molecular-beam epitaxy

T. Kang, H. Cho, C. M. Park, 2005 .

Observation of Au nanoparticles on the surface of silicon nanowire grown by rapid thermal chemical vapour deposition

D. W. Kwak, H. Cho, Dong Wha Lee, 2015 .

Characteristics of molecular beam epitaxy-grown GaFeAs

Young Ju Park, R. Moriya, H. Cho, 2002 .

Effect of Si Growth Temperature on Fabrication of Si-ZnO Coaxial Nanorod Heterostructure on (100) Si Substrate

Sejoon Lee, D. W. Kwak, H. Cho, 2017, Journal of Electronic Materials.

Dimensional evolution of silicon nanowires synthesized by Au–Si island-catalyzed chemical vapor deposition

D. W. Kwak, H. Cho, Woochul Yang, 2007 .

Hydrogen effects on deep level defects in proton implanted Cu(In,Ga)Se2 based thin films

M. Seol, J. Jeong, D. W. Kwak, 2012 .