M. Scott

Fatigue-free ferroelectric capacitors with platinum electrodes

M. C. Scott, C. Araujo, J. Cuchiaro, 1995, Nature.

ULSI DRAM Technology with Bag 7Sr0 3TiO3 Film of 1.3nm Equivalent Si02 Thickness and 10+A/cm2 Leakage Current

Y. Uemoto, E. Fujii, M. Scott, 1992 .

ULSI DRAM technology with Ba/sub 0.7/Sr/sub 0.3/TiO/sub 3/ film of 1.3nm equivalent SiO/sub 2/ thickness and 10/sup -9/ A/cm/sup 2/ leakage current

Y. Uemoto, E. Fujii, L. Mcmillan, 1992, 1992 International Technical Digest on Electron Devices Meeting.

Microstructure-induced Schottky barrier effects in barium strontium titanate (BST) thin films for 16 and 64 Mbit (DRAM cells)

E. Fujii, T. Roberts, L. Mcmillan, 1992, ISAF '92: Proceedings of the Eighth IEEE International Symposium on Applications of Ferroelectrics.

Negative differential resistivity in ferroelectric thin-film current-voltage relationships

R. Zuleeg, C. Araujo, J. Cuchiaro, 1994 .

Structure and Device Characteristics of SrBi_2Ta_2O_9-Based Nonvolatile Random-Access Memories

James F. Scott, M. C. Scott, Frances M. Ross, 1996 .

Dielectric breakdown in high-ε films for ULSI DRAMs: II. barium-strontium titanate ceramics

T. Roberts, C. Araujo, J. Scott, 1994 .

Anomalous fatigue behavior in Zn doped PZT

T. Mihara, L. Mcmillan, M. Scott, 1993 .