P. Wijewarnasuriya

发表

High Efficiency c-Silicon Solar Cells Based on Micro-Nanoscale Structure

F. Semendy, P. Wijewarnasuriya, N. Dhar, 2011 .

Sulfur Implanted Black Silicon for Metal Semiconductor Metal (MSM) Photodetectors

F. Semendy, P. Wijewarnasuriya, G. Meissner, 2012 .

Nanostructured Detector Technology for Optical Sensing Applications

D. Polla, A. Sood, M. Dubey, 2014 .

EO/IR sensors development using zinc oxide and carbon nanostructures

Nibir K. Dhar, Zhong Lin Wang, Ashok K. Sood, 2009, Defense + Commercial Sensing.

1/f noise in very-long-wavelength infrared Hg1−xCdx Te detectors

P. S. Wijewarnasuriya, M. G. Stapelbroek, M. Stapelbroek, 2002 .

Modeling of HgCdTe photodetectors in the LWIR region

Dragica Vasileska, Priyalal S. Wijewarnasuriya, D. Vasileska, 2012, 2012 15th International Workshop on Computational Electronics.

OPTODET - tool to model LWIR and MWIR region for HgCdTe photodetectors

D. Vasileska, P. Wijewarnasuriya, P. Muralidharan, 2011, 2011 11th IEEE International Conference on Nanotechnology.

Molecular beam epitaxial growth and characterization of HgCdTe, HgZnTe, and HgMnTe on GaAs(100)

J. Reno, S. Sivananthan, P. Wijewarnasuriya, 1986 .

Low Temperature, Rapid Thermal Cycle Annealing of HgCdTe Grown on CdTe/Si

M. V. Rao, P. Wijewarnasuriya, S. Simingalam, 2015, Journal of Electronic Materials.

Processing, Fabrication and Characterization of Advanced Target Sensors Using Mercury Cadmium Telluride (MCT)

N. Bambha, F. Semendy, P. Wijewarnasuriya, 2010 .

HgCdTe intrared detectors

P. Wijewarnasuriya, J. Poksheva, A. D'Souza, 2001 .

Analysis of the variation in the composition as a function of growth parameters in the MBE growth of indium doped Hg1−xCdxTe

Latika S. R. Becker, S. Sivananthan, P. Wijewarnasuriya, 1998 .

Modeling of LWIR HgCdTe Auger-Suppressed Infrared Photodiodes under Nonequilibrium Operation

J. Phillips, C. Grein, P. Wijewarnasuriya, 2008 .

The doping of mercury cadmium telluride grown by molecular‐beam epitaxy

S. Sivananthan, P. Wijewarnasuriya, Mi-Yeon Kim, 1988 .

Dark Currents in a Fully-Depleted LWIR HgCdTe P-on-n Heterojunction: Analytical and Numerical Simulations

P. Wijewarnasuriya, R. DeWames, J. Schuster, 2017, Journal of Electronic Materials.

Spectral Response Model of Backside-Illuminated HgCdTe Detectors

M. Stapelbroek, P. Wijewarnasuriya, A. D'Souza, 2011 .

Monte Carlo Modeling of VLWIR HgCdTe Interdigitated Pixel Response

M. Stapelbroek, P. Wijewarnasuriya, A. D'Souza, 2010 .

Correlation between visual defects and increased dark current in large-area Hg1−xCdxTe photodiodes

J. E. Andrews, J. C. Ehlert, M. Stapelbroek, 2005 .

1/f noise in large-area Hg1−xCdxTe photodiodes

J. C. Ehlert, D. Smith, M. Stapelbroek, 2003 .

Current mechanisms in VLWIR Hg1−xCdxTe photodiodes

P. Wijewarnasuriya, A. D'Souza, R. DeWames, 2001 .

Large VLWIR Hg1−xCdxTe photovoltaic detectors

W. Mclevige, C. Staller, P. Wijewarnasuriya, 2000 .

Excess low frequency noise/I-V studies in p-on-n MBE LWIR Hg1−xCdxTe detectors

J. Bajaj, P. Wijewarnasuriya, A. D'Souza, 1999 .

MBE-Grown ZnTe/Si, a Low-Cost Composite Substrate

Nibir K. Dhar, Priyalal S. Wijewarnasuriya, David J. Smith, 2012, Journal of Electronic Materials.

Microstructural Characterization of Defects and Chemical Etching for HgCdSe/ZnTe/Si (211) Heterostructures

David J. Smith, S. Trivedi, P. Wijewarnasuriya, 2018, Journal of Electronic Materials.

Mercury cadmium selenide for infrared detection

B. Vanmil, C. Swartz, P. Wijewarnasuriya, 2013 .

Topography and Dislocations in (112)B HgCdTe/CdTe/Si

M. Groenert, P. Smith, P. Wijewarnasuriya, 2009 .

Model Development of p-i-n Germanium Devices for Infrared Detection

A. Sood, H. Efstathiadis, J. Zeller, 2018 .

Improve molecular beam epitaxy growth of HgCdTe on CdZnTe (211)B substrates using interfacial layers of HgTe∕CdTe superlattices

David J. Smith, Changzhen Wang, C. Grein, 2006 .

Light-hole and heavy-hole transitions for high-temperature long-wavelength infrared detection

Y. Lao, Hui C. Liu, M. Buchanan, 2010 .

Arsenic incorporation in MBE grown Hg1−xCdxTe

J. Garland, S. Sivananthan, C. Grein, 1999 .

Arsenic incorporation in HgCdTe grown by molecular beam epitaxy

S. Sivananthan, P. S. Wijewarnasuriya, S. Sivananthan, 1998 .

Nonequilibrium Operation of Arsenic Diffused Long-Wavelength Infrared HgCdTe Photodiodes

M. Stapelbroek, S. Sivananthan, C. Grein, 2008, 2007 International Semiconductor Device Research Symposium.

Evidence that arsenic is incorporated as As4 molecules in the molecular beam epitaxial growth of Hg1−xCdxTe:As

B. Yang, J. Garland, S. Sivananthan, 1999 .

Analysis of low doping limitation in molecular beam epitaxially grown HgCdTe(211)B epitaxial layers

S. Sivananthan, P. Wijewarnasuriya, J. Faurie, 1995 .

Electrical properties of intrinsic p‐type shallow levels in HgCdTe grown by molecular‐beam epitaxy in the (111)B orientation

S. Sivananthan, P. Wijewarnasuriya, I. Sou, 1989 .

Device Modeling for Split-Off Band Detectors

P. Jayaweera, P. Wijewarnasuriya, A. Perera, 2009 .

Minority carrier lifetime in indium-doped HgCdTe(211)B epitaxial layers grown by molecular beam epitaxy

S. Sivananthan, P. Wijewarnasuriya, J. Faurie, 1995 .

Dislocation Reduction of HgCdTe/Si Through Ex Situ Annealing

Nibir K. Dhar, Priyalal S. Wijewarnasuriya, M. V. Rao, 2010 .

Comparison of the Schaake and Benson Etches to Delineate Dislocations in HgCdTe Layers

M. V. Rao, P. Wijewarnasuriya, N. Dhar, 2013, Journal of Electronic Materials.

Hg based II–VI compounds on non‐standard substrates

P. Wijewarnasuriya, G. Brill, Yuanping Chen, 2012 .

Effect of Cycle Annealing Parameters on Dislocation Density Reduction for HgCdTe on Si

M. V. Rao, P. Wijewarnasuriya, N. Dhar, 2011 .

Dislocation Analysis in (112)B HgCdTe/CdTe/Si

E. A. Patten, D. Lofgreen, P. Smith, 2011 .

Ex Situ Thermal Cycle Annealing of Molecular Beam Epitaxy Grown HgCdTe/Si Layers

M. V. Rao, P. Wijewarnasuriya, N. Dhar, 2010 .

Development of Low Dark Current SiGe Near-Infrared PIN Photodetectors on 300 mm Silicon Wafers

A. Sood, H. Efstathiadis, J. Zeller, 2016 .

Impact of Tellurium Precipitates in CdZnTe Substrates on MBE HgCdTe Deposition

D. Lofgreen, P. Smith, M. Carmody, 2014, Journal of Electronic Materials.

Impurity Gettering in (112)B HgCdTe/CdTe/Alternate Substrates

E. A. Patten, J. Bangs, D. Lofgreen, 2013, Journal of Electronic Materials.

Reduction of Dislocation Density by Producing Novel Structures

P. Smith, M. Carmody, P. Wijewarnasuriya, 2012, Journal of Electronic Materials.

Recent Results on Growth of (211)B CdTe on (211)Si with Intermediate Ge and ZnTe Buffer Layers by Metalorganic Vapor-Phase Epitaxy

S. Trivedi, I. Bhat, P. Wijewarnasuriya, 2012, Journal of Electronic Materials.

Observation of Reciprocity between Photovoltaic External Quantum Efficiency and Radiative Luminescence in III-V Nanostructured Solar Cells

A. Sood, P. Wijewarnasuriya, N. Dhar, 2017 .

HgCdTe(211)B Grown on CdTe(211)B/ZnTe(211)B/Si(211) by MBE

S. Sivananthan, P. Wijewarnasuriya, S. Rujirawat, 1996 .

GaAs High Breakdown Voltage Front and Back Side Processed Schottky Detectors for X-Ray Detection

Satpal Singh, M. Litz, F. Semendy, 2007 .

Passivation effect on optical and electrical properties of molecular beam epitaxy-grown HgCdTe/CdTe/Si layers

S. Sivananthan, P. Wijewarnasuriya, R. Kiran, 2006 .

Molecular beam epitaxial growth and characterization of a novel superlattice system: Hg1−xCdxTe‐CdTe

J. Reno, P. Wijewarnasuriya, I. Sou, 1986 .

Molecular beam epitaxial growth of a novel strained layer type III superlattice system: HgTe-ZnTe

S. Sivananthan, P. Wijewarnasuriya, J. Faurie, 1986 .

Development and fabrication of extended short wavelength infrared HgCdTe sensors grown on CdTe/Si substrates by molecular beam epitaxy

M. V. Rao, B. Vanmil, P. Wijewarnasuriya, 2014 .

Analysis of Current–Voltage Measurements on Long-Wavelength HgCdTe Photodiodes Fabricated on Si Composite Substrates

P. Wijewarnasuriya, N. Dhar, D. Edwall, 2010 .

Hall electron density and mobility in HgCdTe alloys with anomalous behavior of the Hall coefficient in weak magnetic field

S. Sivananthan, P. Wijewarnasuriya, J. Faurie, 1993 .

Shubnikov-de Haas oscillations on as-grown and annealed molecular-beam-epitaxy-grown Hg1-xCdxTe alloys doped with indium

S. Sivananthan, P. Wijewarnasuriya, I. Sou, 1993 .

Synthesis and Characterization of Large PbSe Colloidal Quantum Dots

S. Trivedi, S. Thon, P. Wijewarnasuriya, 2021, Particle & Particle Systems Characterization.

MWIR DLPH HgCdTe photodiode performance dependence on substrate material

J. Bajaj, P. Wijewarnasuriya, A. D'Souza, 1998 .

Atomic Model of CdSe QDs Containing Density Waves as Derived from PDF Analysis

S. Gierlotka, P. Wijewarnasuriya, W. Palosz, 2013 .

Band offsets and carrier dynamics of type-II InAs/GaSb superlattice photodetectors studied by internal photoemission spectroscopy

S. Krishna, Y. Lao, E. Plis, 2013 .

HgTe Quantum Dots for Near-, Mid-, and Long-Wavelength IR Devices

S. Trivedi, P. Wijewarnasuriya, G. Meissner, 2017, Journal of Electronic Materials.

Arsenic incorporation in HgCdTe grown by molecular beam epitaxy

S. Sivananthan, P. Wijewarnasuriya, F. Aqariden, 1998 .

Electrical properties of Li-doped Hg(1-x)Cd(x)Te(100) by molecular beam epitaxy

S. Sivananthan, P. Wijewarnasuriya, I. Sou, 1987 .

CdTe Photovoltaic Devices for Solar Cell Applications by Priyalal Wijewarnasuriya

P. Wijewarnasuriya, 2011 .

Intrinsic Exciton-Phonon Coupling and Tuning in ZnTe Nanowires Probed by Resonant Raman Scattering

Fan Zhang, P. Wijewarnasuriya, J. Marmon, 2020 .

Molecular beam epitaxial growth and characterization of Cd1−xZnxTe, Hg1−xCdxTe, Hg1−xMnxTe, and Hg1−xZnxTe on GaAs(100)

J. Reno, S. Sivananthan, P. Wijewarnasuriya, 1986 .

Role of the crystallographic orientation on the incorporation of indium in HgCdTe epilayers grown by molecular beam epitaxy

P. Wijewarnasuriya, I. Sou, J. Faurie, 1989 .

Surface Morphology and Defect Formation Mechanisms for HgCdTe (211)B Grown by Molecular Beam Epitaxy

Vaidya Nathan, Nibir K. Dhar, S. Sivananthan, 2008 .

Correlation of CdZnTe(211)B substrate surface morphology and HgCdTe(211)B epilayer defects

S. Sivananthan, P. Wijewarnasuriya, J. Zhao, 2004 .

As-Received CdZnTe Substrate Contamination

D. Lofgreen, P. Smith, M. Carmody, 2015, Journal of Electronic Materials.

Carrier recombination in indium‐doped HgCdTe(211)B epitaxial layers grown by molecular beam epitaxy

S. Sivananthan, Jean-Pierre Faurie, P. S. Wijewarnasuriya, 1994 .

Annealing experiments in heavily arsenic-doped (Hg,Cd)Te

S. Sivananthan, P. Wijewarnasuriya, P. Faurie, 1995 .

High‐quality p‐type HgCdTe grown by molecular beam epitaxy

Jean-Pierre Faurie, P. S. Wijewarnasuriya, M. Boukerche, 1990 .

Study of HgCdSe Material Grown by Molecular Beam Epitaxy

G. Brill, P. S. Wijewarnasuriya, P. Wijewarnasuriya, 2011 .

Overview of detector technologies for EO/IR sensing applications

Nibir K. Dhar, Ashok K. Sood, Yash R. Puri, 2016, SPIE Commercial + Scientific Sensing and Imaging.

Nanostructured detector technologies for optical sensing applications

Madan Dubey, Nibir K. Dhar, Ashok K. Sood, 2014, Sensing Technologies + Applications.

Electrical properties of molecular beam epitaxy produced HgCdTe layers doped during growth

J. Reno, P. Wijewarnasuriya, I. Sou, 1986 .

Growth and characterization of Hg1−xMnxTe grown by molecular beam epitaxy

J. Reno, P. Wijewarnasuriya, I. Sou, 1985 .

IV–VI device arrays: Microfabrication and specific contact resistivity

M. Tidrow, T. Harman, P. Taylor, 2004 .

Growth and Analysis of HgCdTe on Alternate Substrates

L. O. Bubulac, J. D. Benson, J. M. Arias, 2012, Journal of Electronic Materials.

Multispectral EO/IR sensor model for evaluating UV, visible, SWIR, MWIR and LWIR system performance

Ashok K. Sood, Robert A. Richwine, Yash R. Puri, 2009, Defense + Commercial Sensing.

Microscopic defects on MBE grown LWIR Hg1−xCdxTe material and their impact on device performance

D. B. Young, M. Zandian, D. D. Edwall, 1999 .

The Distribution Tail of LWIR HgCdTe-on-Si FPAs: a Hypothetical Physical Mechanism

M. Carmody, P. Wijewarnasuriya, S. Johnson, 2011 .

Dislocation reduction in CdTe/Si by molecular beam epitaxy through in-situ annealing

Nibir K. Dhar, Priyalal S. Wijewarnasuriya, G. Brill, 2008 .

Analysis of Mesa Dislocation Gettering in HgCdTe/CdTe/Si(211) by Scanning Transmission Electron Microscopy

P. Smith, P. Wijewarnasuriya, J. Benson, 2013, Journal of Electronic Materials.

High Resolution X-ray Diffraction Studies of MBE-Grown HgCdTe Layers on Bulk-Grown CdZnTe Substrate

P. Wijewarnasuriya, S. Qadri, P. Amarasinghe, 2015, Journal of Electronic Materials.

Dislocation Reduction in HgCdTe Mesa Structures Formed on CdTe/Si

M. V. Rao, P. Wijewarnasuriya, S. Simingalam, 2016, Journal of Electronic Materials.

Reduction of Dislocation Density in HgCdTe on Si by Producing Highly Reticulated Structures

M. Carmody, J. D. Benson, G. Brill, 2011 .

Characterization of Dislocations in (112)B HgCdTe/CdTe/Si

L. O. Bubulac, E. A. Patten, P. M. Goetz, 2010 .

MBE growth and characterization of in situ arsenic doped HgCdTe

A. Chen, S. Sivananthan, P. Wijewarnasuriya, 1998 .

Junction optimization in HgCdTe: Shockley-Read-Hall generation-recombination suppression

E. Bellotti, P. Wijewarnasuriya, R. DeWames, 2015 .

Mode of arsenic incorporation in HgCdTe grown by MBE

Majid Zandian, Sivalingam Sivananthan, Jose M. Arias, 1997 .

Summary Abstract: Type III–type I transition in Hg1−xCdxTe–CdTe, Hg1−xMnxTe–CdTe, and Hg1−xZnxTe–CdTe superlattices

J. Reno, S. Sivananthan, P. Wijewarnasuriya, 1987 .

Mercury Cadmium Telluride for High Operating Temperature Infrared Detectors

S. Sivananthan, P. Wijewarnasuriya, N. Dhar, 2004 .

High-performance SWIR sensing from colloidal quantum dot photodiode arrays

Ethan Klem, Jay Lewis, Chris Gregory, 2013, Optics & Photonics - Optical Engineering + Applications.

Development of graphene based detectors for EO/ IR applications

Nibir K. Dhar, Ashok K. Sood, Yash R. Puri, 2016, SPIE Commercial + Scientific Sensing and Imaging.

Fabrication of freestanding SWCNT networks for fast microbolometric focal plane array sensor

V. Swaminathan, Jiri Cech, P. Wijewarnasuriya, 2010, Defense + Commercial Sensing.

Ultra-thin super absorbing photon trapping materials for high-performance infrared detection

Nibir K. Dhar, Priyalal S. Wijewarnasuriya, M. Saif Islam, 2019, Defense + Commercial Sensing.

Band Offsets of III–V and II–VI Materials Studied by Temperature-Dependent Internal Photoemission Spectroscopy

Y. Lao, A. Perera, P. Wijewarnasuriya, 2016, Journal of Electronic Materials.

Plasmon-enhanced optical photodiodes based on MEH-PPV polymer and fullerene blend on ITO

Priyalal S. Wijewarnasuriya, Fred Semendy, Greg Meissner, 2012, Other Conferences.

Nanostructure-based EO/IR focal plane array development for unattended ground sensor applications

Zhong Lin Wang, Ashok K. Sood, Robert A. Richwine, 2011, Defense + Commercial Sensing.

Review of Graphene Technology and Its Applications for Electronic Devices

D. Polla, A. Sood, E. Zakar, 2015 .

Electrooptical Characterization of MWIR InAsSb Detectors

E. Robinson, A. C. Ionescu, D. Okerlund, 2012, Journal of Electronic Materials.

Infrared (1-12 μm) atomic and molecular emission signatures from energetic materials using laser-induced breakdown spectroscopy

P. S. Wijewarnasuriya, E. Brown, S. B. Trivedi, 2013, Defense, Security, and Sensing.

Design and development of carbon nanotube and graphene based microbolometer for IR imaging applications

Madan Dubey, Nibir K. Dhar, Xi Shao, 2012, Other Conferences.