Van de Sanden

发表

Microcrystalline silicon solar cells with an open circuit voltage above 600 mV

B. Rech, W. Kessels, F. Finger, 2007 .

Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3

Wmm Erwin Kessels, van de Mcm Richard Sanden, Sbs Stephan Heil, 2006 .

The effect of low frequency pulse-shaped substrate bias on the remote plasma deposition of a-Si : H thin films

W. Kessels, W. Kessels, M. V. D. van de Sanden, 2010 .

Absolute density of the argon first excited states in plasmas used for carbon deposition as determined by absorption spectroscopy

Van de Sanden, A. Buuron, D. Otorbaev, 1995 .

In situ spectroscopic ellipsometry as a versatile tool for studying atomic layer deposition

Sbs Stephan Heil, W. Keuning, W. Kessels, 2009 .

Deposition of TiN and TaN by Remote Plasma ALD for Cu and Li Diffusion Barrier Applications

Phl Peter Notten, Hcm Harm Knoops, Rah Rogier Niessen, 2008 .

Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition

Wmm Erwin Kessels, Fred Roozeboom, van de Mcm Richard Sanden, 2006 .

The atomic hydrogen flux to silicon growth flux ratio during microcrystalline silicon solar cell deposition

G. Dingemans, W. Kessels, A. Gordijn, 2008 .

Probing the phase composition of silicon films in situ by etch product detection

G. Dingemans, W. Kessels, A. Gordijn, 2007 .

Hidden parameters in the plasma deposition of microcrystalline silicon solar cells

B. Rech, M. Sanden, R. Schmitz, 2007 .

Microcrystalline silicon deposition: Process stability and process control

B. Rech, W. Kessels, L. Houben, 2007 .

The role of plasma induced substrate heating during high rate deposition of microcrystalline silicon solar cells

B. Rech, R. Schmitz, W. Appenzeller, 2006 .

Highly efficient microcrystalline silicon solar cells deposited from a pure SiH4 flow

B. Rech, W. Kessels, F. Finger, 2005 .

Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

Se Stephen Potts, Wmm Erwin Kessels, van de Mcm Richard Sanden, 2011 .

Optical constants of graphene measured by spectroscopic ellipsometry

van de Mcm Richard Sanden, Van de Sanden, Jw Jan-Willem Weber, 2010 .

Absence of the enhanced intra-4f transition cross section at 1.5μm of Er3+ in Si-rich SiO2

Imp Igor Aarts, A. Polman, H. Mertens, 2005 .

Er3+ and Si luminescence of atomic layer deposited Er-doped Al2O3 thin films on Si(100)

G. Dingemans, W. Kessels, Van de Sanden, 2011 .

Optical properties of Y2O3 thin films doped with spatially controlled Er3+ by atomic layer deposition

Kang L. Wang, Jane P. Chang, R. Ostroumov, 2007 .

Novel in situ and real-time optical probes to detect (surface) defect states of a-Si:H

Jpm Johan Hoefnagels, Imp Igor Aarts, W. Kessels, 2005 .

Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides

W. Kessels, Van de Sanden, P. Kudlacek, 2011 .

Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks

G. Dingemans, W. Kessels, Van de Sanden, 2010 .

On the growth mechanism of a-Si:H

Ahm Arno Smets, E. Aydil, W. Kessels, 2001 .

Formation of cationic silicon clusters in a remote silane plasma and their contribution to hydrogenated amorphous silicon film growth

W. Kessels, Van de Sanden, D. Schram, 1999 .

Ion densities in a high-intensity, low flow nitrogen-argon plasma

G. Brussaard, Van de Sanden, D. Schram, 1997 .

Studies into the Growth Mechanism of a‐Si:H Using in situ Cavity Ring‐Down Techniques

Jpm Johan Hoefnagels, Imp Igor Aarts, B. Hoex, 2010 .

Absolute in situ measurement of surface dangling bonds during a-Si:H growth

Imp Igor Aarts, W. Kessels, Van de Sanden, 2007 .

Vacancies and voids in hydrogenated amorphous silicon

Ahm Arno Smets, W. Kessels, Van de Sanden, 2003 .

Plasma and surface chemistry effects during high rate deposition of hydrogenated amorphous silicon

Rj René Severens, W. Kessels, Van de Sanden, 1999 .

Vibrational Population of Hydrogen Molecules Excited by an RF Discharge in an Expanding Thermal Arc Plasma as Determined by Emission Spectroscopy

Van de Sanden, D. Otorbaev, D. Schram, 1995 .

Heterogeneous and homogeneous hydrogen kinetics in plasma chemistry

Van de Sanden, D. Otorbaev, D. Schram, 1995 .

Hot electrons in an expanding magnetized hydrogen plasma

G. Brussaard, Van de Sanden, D. Otorbaev, 2002 .

Diagnostics of the magnetized low-pressure hydrogen plasma jet: Molecular regime

G. Brussaard, Van de Sanden, D. Otorbaev, 1996 .

Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor

Sbs Stephan Heil, J. L. Hemmen, J. Klootwijk, 2007 .

Cavity ring down detection of SiH3 on the broadband Ã 2A1′ ←X 2A1 transition in a remote Ar–H2–SiH4 plasma

W. Kessels, Van de Sanden, D. Schram, 2000 .

An improved thin film approximation to accurately determine the optical conductivity of graphene from infrared transmittance

A. Bol, Van de Sanden, Jw Jan-Willem Weber, 2014 .

New temporary superstrate process for roll-to-roll production of thin film solar cells

Rj René Severens, M. Zeman, H. Meiling, 1998 .

Real time spectroscopic ellipsometry on ultrathin (<50Å) hydrogenated amorphous silicon films on Si(100) and GaAs(100)

W. Kessels, Van de Sanden, van den Pj Peter Oever, 2007 .

Property control of expanding thermal plasma deposited textured zinc oxide with focus on thin film solar cell applications

R. Schropp, R. Schropp, Van de Sanden, 2005 .

Low temperature plasma-enhanced atomic layer deposition of metal oxide thin films

W. Keuning, G. Dingemans, W. Kessels, 2010 .

Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD

G. Dingemans, W. Kessels, Van de Sanden, 2010 .

Bulk and surface defects in a-Si:H films studied by means of the cavity ring down absorption technique

Ahm Arno Smets, Van de Sanden, V. P. Helden, 2002 .

Cavity ring down detection of SiH3 in a remote SiH4 plasma and comparison with model calculations and mass spectrometry

Jpm Johan Hoefnagels, W. Kessels, Van de Sanden, 2001 .

Relation between Growth Precursors and Film Properties for Plasma Deposition of a-Si:H at Rates up to 100 Å/s

Jpm Johan Hoefnagels, Ahm Arno Smets, W. Kessels, 2000 .

Dielectric barrier discharges revisited: the case for mobile surface charge

Fjj Floran Peeters, Van de Sanden, F. Peeters, 2016 .

Hot-wire deposition of a-Si:H thin films on wafer substrates studied by real-time spectroscopic ellipsometry and infrared spectroscopy

W. Kessels, Van de Sanden, J. Gielis, 2008 .

Real-time study of HWCVD a-Si:H film growth using optical second harmonic generation spectroscopy

Imp Igor Aarts, W. Kessels, Van de Sanden, 2006 .

Surface roughness evolution of a-Si:H growth and its relation to the growth mechanism

Ahm Arno Smets, Van de Sanden, D. Schram, 2000 .

Cavity ring down study of the densities and kinetics of Si and SiH in a remote Ar-H2-SiH4 plasma

Jpm Johan Hoefnagels, W. Kessels, Van de Sanden, 2001 .

Improvement of hydrogenated amorphous silicon properties with increasing contribution of SiH3 to film growth

Jpm Johan Hoefnagels, W. Kessels, Van de Sanden, 2001 .

Temperature and growth-rate effects on the hydrogen incorporation in a-Si:H

Rj René Severens, W. Kessels, Van de Sanden, 1998 .

Hydrogenated amorphous silicon deposited at very high growth rates by an expanding Ar-H2-SiH4 plasma

Ba Bas Korevaar, Rj René Severens, Ahm Arno Smets, 2001 .

CHARACTERIZATION OF PLASMA BEAM DEPOSITED AMORPHOUS HYDROGENATED SILICON

Rj René Severens, G. Brussaard, Van de Sanden, 1995 .

X-Ray photoelectron spectroscopy reference data for identification of the C3N4 phase in carbon–nitrogen films

van de Mcm Richard Sanden, Konstantin I. Maslakov, de A Ariël Graaf, 2000 .

High rate (∼3 nm/s) deposition of dense silicon nitride films at low substrate temperatures (<150 °C) using the expanding thermal plasma and substrate biasing

W. Kessels, Van de Sanden, van Fjh Ferdie Assche, 2005 .

Plasma chemistry aspects of a-Si:H deposition using an expanding thermal plasma

Rj René Severens, W. Kessels, Van de Sanden, 1998 .

Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3

G. Dingemans, W. Kessels, D. Pierreux, 2011 .

Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma

F. Roozeboom, L. Lamagna, S. Rushworth, 2011 .

A new and fast in-situ spectroscopic infrared absorption measurement technique

Van de Sanden, A. Klaver, van Mfam Maikel Hest, 2001 .

The a-Si:H growth mechanism and the role of H abstraction from the surface by SiH3 radicals via an Eley–Rideal mechanism

Ahm Arno Smets, W. Kessels, Van de Sanden, 2004 .

The role of H in the growth mechanism of PECVD a-Si:H

Ba Bas Korevaar, Rj René Severens, Ahm Arno Smets, 1999 .

Stability of Al2O3 and Al2O3/a-SiNx:H stacks for surface passivation of crystalline silicon

B. Hoex, F. Einsele, G. Dingemans, 2009 .

Conformality of Plasma-Assisted ALD: Physical Processes and Modeling

Hcm Harm Knoops, W. Kessels, Van de Sanden, 2010 .

Role of field-effect on c-Si surface passivation by ultrathin (2–20 nm) atomic layer deposited Al2O3

G. Dingemans, W. Kessels, Van de Sanden, 2010 .

Relation of the Si-H stretching frequency to the nanostructural Si-H bulk environment

Ahm Arno Smets, Van de Sanden, 2007 .

An Expanding Thermal Plasma for Deposition of a-Si:H

Rj René Severens, G. Brussaard, Van de Sanden, 1995 .

Probing hydrogenated amorphous silicon surface states by spectroscopic and real-time second-harmonic generation

Imp Igor Aarts, W. Kessels, Van de Sanden, 2006 .

High hole drift mobility in a-Si:H deposited at high growth rates for solar cell application

Ba Bas Korevaar, Ahm Arno Smets, W. Kessels, 2000 .

An expanding thermal plasma for deposition of surface textured ZnO:Al with focus on thin film solar cell applications

Van de Sanden, D. Schram, A. D. Kuypers, 2001 .

Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition

M. Verheijen, G. Dingemans, W. Kessels, 2011 .

The growth kinetics of silicon nitride deposited from the SiH4-N2 reactant mixture in a remote plasma

W. Kessels, Van de Sanden, van den Pj Peter Oever, 2004 .

High-rate deposition of a-SiNx:H for photovoltaic applications by the expanding thermal plasma

T. Lauinger, W. Kessels, Van de Sanden, 2002 .

Microfocus infrared ellipsometry characterization of air-exposed graphene flakes

K. Hinrichs, Van de Sanden, M. Gensch, 2011 .

Fluid modelling of CO2 dissociation in a dielectric barrier discharge

Van de Sanden, M. Becker, D. Loffhagen, 2016 .

Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas

Hcm Harm Knoops, W. Kessels, Van de Sanden, 2012 .

Plasma diagnostic study of silicon nitride film growth in a remote Ar-H2-N2-SiH4 plasma: Role of N and SiHn radicals

W. Kessels, Van de Sanden, D. Schram, 2004 .

Erratum: “Plasma chemistry aspects of a-Si:H deposition using an expanding thermal plasma” [J. Appl. Phys. 84, 2426 (1998)]

Rj René Severens, W. Kessels, Van de Sanden, 1999 .

Fundamentals and application of an expanding hydrogen low-pressure plasma jet

G. Brussaard, Van de Sanden, D. Otorbaev, 1996 .

Quality improvement of plasma-beam-deposited amorphous hydrogenated carbon with higher growth rate

Prm Patrick Kleuskens, Van de Sanden, D. Schram, 1996 .

Fast deposition of amorphous carbon films by an expanding cascaded arc plasma jet

Van de Sanden, A. Buuron, D. Schram, 1995 .

Analysis of the expanding thermal argon?oxygen plasma gas phase

Van de Sanden, D. Schram, J. Haartsen, 2003 .

Silicon surface passivation by hot-wire CVD Si thin films studied by in situ surface spectroscopy

B. Hoex, W. Kessels, Van de Sanden, 2009 .

The role of the silyl radical in plasma deposition of microcrystalline silicon

Van de Sanden, V. Swaaij, van Racmm René Swaaij, 2004 .

Density and production of NH and NH2 in an Ar-NH3 expanding plasma jet

W. Kessels, Van de Sanden, D. Schram, 2005 .

CO and byproduct formation during CO2 reduction in dielectric barrier discharges

Van de Sanden, R. Engeln, S. Welzel, 2014 .

Reaction mechanisms during plasma-assisted atomic layer deposition of metal oxides : a case study for Al2O3

Sbs Stephan Heil, W. Kessels, Van de Sanden, 2008 .

In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3

Sbs Stephan Heil, W. Kessels, Van de Sanden, 2006 .

Stripping of photoresist using a remote thermal Ar/O2 and Ar/N2/O2 plasma

G. Brussaard, Van de Sanden, D. Schram, 2003 .

Importance of defect density near the p-i interface for a-Si:H solar cell performance

Ba Bas Korevaar, Van de Sanden, V. Swaaij, 2001 .

High-Rate Anisotropic Silicon Etching with the Expanding Thermal Plasma Technique

F. Roozeboom, M. Blauw, Van de Sanden, 2006, ECS Transactions.

Fast deposition of microcrystalline silicon with an expanding thermal plasma

Ba Bas Korevaar, Van de Sanden, V. Swaaij, 2002 .

Atomic hydrogen and argon ground state density determination in a recombining plasma using visible light absorption spectroscopy

Van de Sanden, A. Buuron, D. Otorbaev, 1995 .

Absorption spectroscopy measurements of atomic and molecular carbon population densities in an expanding thermal arc plasma

Van de Sanden, A. Buuron, D. Otorbaev, 1995 .

A new absorption spectroscopy setup for the sensitive monitoring of atomic and molecular densities

Van de Sanden, A. Buuron, D. Otorbaev, 1995 .

Spectroscopic measurement of atomic hydrogen level populations and hydrogen dissociation degree in expanding cascaded arc plasmas

Van de Sanden, A. Buuron, D. Otorbaev, 1994 .

Amorphous silicon solar cells on natively textured ZnO grown by PECVD

R. Schropp, R. Schropp, Van de Sanden, 2001 .

Plasma chemistry of an expanding Ar/C2H2 plasma used for fast deposition of a-C:H

de A Ariël Graaf, Ahm Arno Smets, Van de Sanden, 1999 .

Material properties and growth process of microcrystalline silicon with growth rates in excess of 1 nm/s

Jpm Johan Hoefnagels, Ahm Arno Smets, W. Kessels, 2001 .

High-rate deposition of nanocrystalline silicon using the expanding thermal plasma technique

W. Kessels, Van de Sanden, Ij Houston, 2006 .

SiHx film growth precursors during high-rate nanocrystalline silicon deposition

W. Kessels, Van de Sanden, K. Nadir, 2006 .

Film growth precursors in a remote SiH/sub 4/ plasma used for high-rate deposition of hydrogenated amorphous silicon

W. Kessels, Van de Sanden, D. Schram, 2000 .

Optical second-harmonic generation in thin film systems

Imp Igor Aarts, W. Kessels, Van de Sanden, 2008 .

Hydrogenated amorphous silicon deposited under accurately controlled ion bombardment using pulse-shaped substrate biasing

M. Zeman, Van de Sanden, M. Wank, 2010 .

The effect of ion-surface and ion-bulk interactions during hydrogenated amorphous silicon deposition

Ahm Arno Smets, W. Kessels, Van de Sanden, 2007 .

External rf substrate biasing during a-Si:H film growth using the expanding thermal plasma technique

Ahm Arno Smets, W. Kessels, Van de Sanden, 2004 .

Investigation of processes in low-pressure expanding thermal plasmas used for carbon nitride deposition: II. Ar/N2 plasma with graphite nozzle

de A Ariël Graaf, G. Dinescu, Van de Sanden, 2001 .

Temperature dependence of the surface roughness evolution during hydrogenated amorphous silicon film growth

Ahm Arno Smets, W. Kessels, Van de Sanden, 2003 .

Design of a fast in situ infrared diagnostic tool

Van de Sanden, D. Schram, A. Klaver, 2003 .

In situ probing of surface hydrides on hydrogenated amorphous silicon using attenuated total reflection infrared spectroscopy

E. Aydil, W. Kessels, Van de Sanden, 2002 .

Surface hydride composition of plasma deposited hydrogenated amorphous silicon: in situ infrared study of ion flux and temperature dependence

E. Aydil, W. Kessels, Van de Sanden, 2003 .

Experimental characterization of a hydrogen/argon cascaded arc plasma source

Van de Sanden, D. Otorbaev, D. Schram, 1994 .

Surface reactions during atomic layer deposition of Pt derived from gas phase infrared spectroscopy

Hcm Harm Knoops, W. Kessels, Van de Sanden, 2009 .

Atmospheric glow stabilization. Do we need pre-ionization?

van de Mcm Richard Sanden, Eugen Aldea, Van de Sanden, 2005 .

Plasma Roadmap : Low temperature plasma science and technology

Moreau, Mason, Cappelli, 2017 .

Time-resolved cavity ring-down spectroscopic study of the gas phase and surface loss rates of Si and SiH3 plasma radicals

Jpm Johan Hoefnagels, W. Kessels, Van de Sanden, 2002 .

Time-resolved cavity ringdown study of the Si and SiH3 surface reaction probability during plasma deposition of a-Si:H at different substrate temperatures

Jpm Johan Hoefnagels, W. Kessels, Van de Sanden, 2004 .

Temperature dependence of the surface reactivity of SiH3 radicals and the surface silicon hydride composition during amorphous silicon growth

Jpm Johan Hoefnagels, W. Kessels, Van de Sanden, 2003 .

Surface reaction probability during fast deposition of hydrogenated amorphous silicon with a remote silane plasma

Rj René Severens, W. Kessels, Van de Sanden, 2000 .

Modeling of the formation of cationic silicon clusters in a remote Ar/H2/SiH4 plasma

W. Kessels, Van de Sanden, D. Schram, 2000 .

Thermal Discharges: Experiments and Diagnostics

Van de Sanden, D. Schram, van der J.J.A.M. Mullen, 1993 .

Deposition of organosilicon thin films using a remote thermal plasma

Van de Sanden, D. Schram, B. Mitu, 2004 .

On the surface roughness development of hydrogenated amorphous silicon deposited at low growth rates

Van de Sanden, M. Wank, V. Swaaij, 2009 .

Plasma chemistry during deposition of a-C:H

M. Wisse, Van de Sanden, J. Benedikt, 2002 .

Deposition of amorphous carbon layers from C2H2 and CF4 with an expanding thermal arc plasma beam set-up

Van de Sanden, D. Schram, Jwam John Gielen, 1995 .

The role of hydrogen during plasma beam deposition of amorphous thin films

Rj René Severens, Van de Sanden, D. Otorbaev, 1995 .

The behaviour of heavy particles in the expanding plasma jet in argon

Van de Sanden, D. Schram, D. Regt, 1994 .

The heating mechanism of electrons in the shock front of an expanding plasma

van den D Bercken, Van de Sanden, D. Schram, 1994 .

Role of carbon atoms in the remote plasma deposition of hydrogenated amorphous carbon

M. Wisse, Van de Sanden, J. Benedikt, 2003 .

Detection of CH in an expanding argon/acetylene plasma using cavity ring down absorption spectroscopy

Van de Sanden, D. Schram, R. Engeln, 1999 .

Absorption spectroscopy on an expanding argon arc plasma

Van de Sanden, A. Buuron, D. Otorbaev, 1993 .

Argon–oxygen plasma treatment of deposited organosilicon thin films

Van de Sanden, D. Schram, A. Klaver, 2004 .

Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth

Wmm Erwin Kessels, van de Mcm Richard Sanden, W. Kessels, 2013 .

Stationary supersonic plasma expansion: continuum fluid mechanics versus direct simulation Monte Carlo method

Dc Daan Schram, Maher I. Boulos, van de Mcm Richard Sanden, 2002 .

The argon-hydrogen expanding plasma : model and experiments

Van de Sanden, M. Beurskens, D. Schram, 1995 .

The expanding thermal arc plasma : the low-flow regime

Van de Sanden, J. Tobin, 1998 .

Plasma-enhanced Chemical Vapor Deposition of Aluminum Oxide Using Ultrashort Precursor Injection Pulses

G. Dingemans, W. Kessels, Van de Sanden, 2012 .

Threshold ionization mass spectrometry study of hydrogenated amorphous carbon films growth precursors

Van de Sanden, S. Agarwal, J. Benedikt, 2005 .

Substrate Biasing during Plasma-Assisted ALD for Crystalline Phase-Control of TiO2 Thin Films

W. Kessels, Van de Sanden, Hb Harald Profijt, 2011 .

Application of atmospheric pressure glow discharge (APGD) for deposition of thin silica like films on polymeric webs

M. Creatore, Van de Sanden, E. Aldea, 2007 .

Investigation of processes in low-pressure expanding thermal plasmas used for carbon nitride deposition: I. Ar/N2/C2H2 plasma

de A Ariël Graaf, G. Dinescu, Van de Sanden, 2001 .

Plasma chemistry during the deposition of a-C:H films and its influence on film properties

Van de Sanden, J. Benedikt, van Slm Siebe Mensfoort, 2003 .

Formation of large positive silicon-cluster ions in a remote silane plasma

W. Kessels, Van de Sanden, D. Schram, 1999 .

Hydrogen poor cationic silicon clusters in an expanding argon–hydrogen–silane plasma

W. Kessels, Van de Sanden, D. Schram, 1998 .

New insights in microcrystalline silicon deposition with expanding thermal plasma chemical vapor deposition

Van de Sanden, V. Swaaij, R. Zambrano, 2006 .

In situ ellipsometric studies of the a-Si:H growth using an expanding thermal plasma

Ahm Arno Smets, Van de Sanden, D. Schram, 1999 .

N, NH, and NH2 radical densities in a remote Ar-NH3-SiH4 plasma and their role in silicon nitride deposition

W. Kessels, Van de Sanden, D. Schram, 2006 .

Surface-diffusion-controlled incorporation of nanosized voids during hydrogenated amorphous silicon film growth

Ahm Arno Smets, W. Kessels, Van de Sanden, 2005 .

Hard amorphous hydrogenated carbon films deposited with an expanding thermal plasma

van de Mcm Richard Sanden, Prm Patrick Kleuskens, Dc Daan Schram, 1995 .

A combined Thomson–Rayleigh scattering diagnostic using an intensified photodiode array

Dc Daan Schram, van der Jjam Joost Mullen, van de Mcm Richard Sanden, 1992 .

In situ single wavelength ellipsometry studies of high rate hydrogenated amorphous silicon growth using a remote expanding thermal plasma

Ahm Arno Smets, Van de Sanden, D. Schram, 2000 .

Determining the material structure of microcrystalline silicon from Raman spectra

Wmm Erwin Kessels, van de Mcm Richard Sanden, W. Kessels, 2003 .

Optical diagnostics for high electron density plasmas

G. Dinescu, Van de Sanden, A. Buuron, 1993 .

On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3

Wmm Erwin Kessels, van de Mcm Richard Sanden, Bram Hoex, 2008 .

B-spline parametrization of the dielectric function applied to spectroscopic ellipsometry on amorphous carbon

Van de Sanden, R. Engeln, T. Hansen, 2009 .

Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films

W. Keuning, G. Dingemans, Van de Sanden, 2009, ECS Transactions.

Influence of the high-temperature “firing” step on high-rate plasma deposited silicon nitride films used as bulk passivating antireflection coatings on silicon solar cells

A. Weeber, W. Kessels, Van de Sanden, 2003 .

Negative charge and charging dynamics in Al2O3 films on Si characterized by second-harmonic generation

B. Hoex, W. Kessels, Van de Sanden, 2008 .

Synergistic etch rates during low-energetic plasma etching of hydrogenated amorphous carbon

Van de Sanden, R. Engeln, T. Hansen, 2012 .

Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3

P. Altermatt, B. Hoex, Jan Schmidt, 2007 .

Plasma and thermal ALD of Al2O3 in a commercial 200 mm ALD reactor

Wmm Erwin Kessels, Fred Roozeboom, van de Mcm Richard Sanden, 2007 .

The Physics of Plasma Expansion

Van de Sanden, D. Schram, R. Engeln, 2001 .

Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy

Wmm Erwin Kessels, van de Mcm Richard Sanden, E Erik Langereis, 2008 .

Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition

Hcm Harm Knoops, F. Roozeboom, W. Kessels, 2007 .

Roughening during XeF2 etching of Si(100) through interface layers: H:Si(100) and a-Si∕Si(100)

W. Kessels, Van de Sanden, A. Stevens, 2009 .

Amorphous silicon layer characteristics during 70-2000 eV Ar+-ion bombardment of Si(100)

W. Kessels, Van de Sanden, A. Stevens, 2006 .

Accurate control of ion bombardment in remote plasmas using pulse- shaped biasing

Van de Sanden, P. Kudlacek, Rf Rein Rumphorst, 2009 .

Silicon surface passivation by atomic layer deposited Al2O3

Wmm Erwin Kessels, van de Mcm Richard Sanden, Bram Hoex, 2008 .

Fabry-Perot line shape analysis on an expanding cascaded arc plasma in argon

Van de Sanden, D. Schram, van der Paa Paul Heijden, 1994 .

Atomic layer deposition for nanostructured Li-ion batteries

Phl Peter Notten, Me Merijn Donders, Hcm Harm Knoops, 2012 .

Local deposition of high-purity Pt nanostructures by combining electron beam induced deposition and atomic layer deposition

W. Kessels, Van de Sanden, Ajm Adrie Mackus, 2010 .

Remote plasma ALD of platinum and platinum oxide films

Phl Peter Notten, Me Merijn Donders, Hcm Harm Knoops, 2009 .

Amorphization of Si(100) by Ar+-ion bombardment studied with spectroscopic and time-resolved second-harmonic generation

W. Kessels, Van de Sanden, Hcw Herman Beijerinck, 2010 .

Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes

Sbs Stephan Heil, Hcm Harm Knoops, W. Kessels, 2010 .

In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition

Sbs Stephan Heil, W. Kessels, Van de Sanden, 2006 .

Composition and bonding structure of plasma-assisted ALD Al2O3 films

V. Verlaan, G. Dingemans, W. Kessels, 2010 .

Real-time study of α-Si:H/c-Si heterointerface formation and epitaxial Si growth by spectroscopic ellipsometry, infrared spectroscopy, and second-harmonic generation

B. Hoex, W. Kessels, Van de Sanden, 2008 .

Argon ion-induced dissociation of acetylene in an expanding Ar/C2H2 plasma

de A Ariël Graaf, Van de Sanden, D. Schram, 1999 .

Effect of substrate conditions on the plasma beam deposition of amorphous hydrogenated carbon

Dc Daan Schram, Wmm Erwin Kessels, van de Mcm Richard Sanden, 1997 .

Plasma beam deposited amorphous hydrogenated carbon: Improved film quality at higher growth rate

Van de Sanden, D. Schram, Jwam John Gielen, 1996 .

Plasma-Assisted Atomic Layer Deposition of Low Temperature SiO2

G. Dingemans, Van de Sanden, van Caa Cristian Helvoirt, 2011 .

Supersonically expanding cascaded arc plasma properties: comparison of Ne, Ar and Xe

Van de Sanden, D. Schram, M. Boulos, 2003 .

Influence of the addition of CF4 on the deposition of a-C:H layers using the expanding thermal plasma technique

Van de Sanden, D. Schram, Jwam John Gielen, 1995 .

On expanding recombining plasma for fast deposition of a-Si:H thin films

Rp Raj Dahiya, G. Dinescu, Van de Sanden, 1994 .

Characterization of carbon nitride thin films deposited by a combined RF and DC plasma beam

van de Mcm Richard Sanden, Eugen Aldea, A. Andrei, 1998 .

Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films

J. Klootwijk, F. Roozeboom, W. Kessels, 2011 .

The Staebler-Wronski Effect: New Physical Approaches and Insights as a Route to Reveal its Origin

Ahm Arno Smets, M. Zeman, C. Wronski, 2010 .

Relation of the SiH stretching frequency to the nanostructural SiH bulk environment

Van de Sanden, Smets, 2007 .

Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications

F. Roozeboom, W. Kessels, Van de Sanden, 2009 .

Spectroscopic second harmonic generation measured on plasma-deposited hydrogenated amorphous silicon thin films

Imp Igor Aarts, W. Kessels, Van de Sanden, 2004 .

High-rate deposition of microcrystalline silicon with an expanding thermal plasma

Van de Sanden, V. Swaaij, A. Klaver, 2005 .

Carbon nitride thin films prepared by a capacitively coupled RF plasma jet

Maria Dinescu, Dc Daan Schram, van de Mcm Richard Sanden, 1996 .

a-Si:H∕c-Si heterointerface formation and epitaxial growth studied by real time optical probes

W. Kessels, Van de Sanden, J. Gielis, 2007 .

Molecular dynamics simulations for the growth of diamond-like carbon films from low kinetic energy species

A. Bogaerts, Van de Sanden, J. Benedikt, 2004 .

Surface textured ZnO films for thin film solar cell applications by expanding thermal plasma CVD

R. Schropp, Van de Sanden, J. Loffler, 2001 .

Remote plasma ALD of SrTiO3 using cyclopentadienlyl-based Ti and Sr precursors

F. Roozeboom, W. Kessels, Van de Sanden, 2011 .

Initial growth and properties of atomic layer deposited TiN films studied by in situ spectroscopic ellipsometry

W. Kessels, Van de Sanden, E. Langereis, 2005 .

Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry

Sbs Stephan Heil, F. Roozeboom, W. Kessels, 2005 .

Atomic layer deposition of Ru from CpRu ( CO 2 ) Et using O 2 gas and O 2 plasma

Van de Sanden, Kessels, Leick-Marius, 2011 .

Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma

Se Stephen Potts, Fred Roozeboom, F. Roozeboom, 2010 .

Plasma-assisted atomic layer deposition of Ta2O5 from alkylamide precursor and remote O2 plasma

Sbs Stephan Heil, F. Roozeboom, W. Kessels, 2008 .

The influence of partial surface discharging on the electrical characterization of DBDs

Fjj Floran Peeters, F. Peeters, M. V. D. van de Sanden, 2014 .

Oscillatory vapour shielding of liquid metal walls in nuclear fusion devices

Van de Sanden, T. Morgan, V. Kvon, 2017, Nature Communications.

Plasma and thermal ALD of Al2O3 in a commercial 200 mm ALD reactor

Sbs Stephan Heil, J. Klootwijk, Van de Sanden, 2007 .

In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd

J. Weber, M. V. D. van de Sanden, W. Kessels, 2016 .

Deposition of TiN and HfO2 in a commercial 200mm remote plasma atomic layer deposition reactor

Sbs Stephan Heil, J. Klootwijk, Van de Sanden, 2007 .

Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition

Wmm Erwin Kessels, Peter Engelhart, van de Mcm Richard Sanden, 2010 .

Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks

G. Dingemans, W. Kessels, Van de Sanden, 2010 .

Experimental characterization of a hydrogen/argon cascaded arc plasma source

Van de Sanden, D. Otorbaev, De Graaf, 1994 .

Effect of hydrogen on the growth of thin hydrogenated amorphous carbon films from thermal energy radicals

A. Bogaerts, Van de Sanden, E. Neyts, 2006 .

Unraveling the deposition mechanism in a-C:H thin-film growth: A molecular-dynamics study for the reaction behavior of C3 and C3H radicals with a-C:H surfaces

A. Bogaerts, Van de Sanden, E. Neyts, 2006 .

Reaction mechanisms and thin a-C:H film growth from low energy hydrocarbon radicals

A. Bogaerts, Van de Sanden, E. Neyts, 2007 .

Hydrogenated amorphous silicon deposited at very high growth rates by an expanding Ar-H2-SiH4 plasma

Rj René Severens, Ahm Arno Smets, W. Kessels, 2001 .

Influence of the high-temperature “firing” step on high-rate plasma deposited silicon nitride films used as bulk passivating antireflection coatings on silicon solar cells

A. Weeber, W. Kessels, Van de Sanden, 2003 .

Ion-radical synergy in HfO 2 etching studied with a XeF 2 /Ar + beam setup

M. Sanden, W. Kessels, Van de Sanden, 2008 .

High-rate deposition of a-SiN x :H films for photovoltaic applications

T. Lauinger, W. Kessels, Van de Sanden, 2001 .

Silicon surface passivation by hot-wire CVD Si thin films studied by in situ surface spectroscopy

B. Hoex, Van de Sanden, J. Gielis, 2009 .

Time-of-flight photocurrents in expanding-thermal-plasma-deposited a-Si:H

Ahm Arno Smets, A. Stesmans, W. Kessels, 2002 .

In situ single wavelength ellipsometry studies of high rate hydrogenated amorphous silicon growth using a remote expanding thermal plasma

Ahm Arno Smets, Van de Sanden, D. Schram, 2000 .