D. Johnson

发表

Technology Development for Self-Powered Sensors

Khai D. T. Ngo, Louis N. Cattafesta, Anurag Kasyap, 2002 .

Aspect ratio dependent etching lag reduction in deep silicon etch processes

Shouliang Lai, R. Westerman, D. Johnson, 2006 .

Damage to III–V devices during electron cyclotron resonance chemical vapor deposition

F. Ren, S. Pearton, J. Lee, 1999 .

Electron cyclotron resonance plasma deposition of silicon nitride: Effect of very low rf substrate bias

K. Buckle, D. Johnson, C. Constantine, 1992 .

Degradation-free electron cyclotron resonance plasma etching of InP

S. Pearton, D. Johnson, U. Chakrabarti, 1991 .

Electron cyclotron resonance plasma etching of InP in CH4/H2/Ar

S. Pearton, D. Johnson, U. Chakrabarti, 1990 .

Plasma Etching of InP and Related Materials in Electron Cyclotron Resonance CH 4 /H 2 /Ar Discharges

S. Pearton, D. Johnson, U. Chakrabarti, 1990 .

Selective dry etching of InGaP over GaAs in inductively coupled plasmas

C. R. Abernathy, S. Pearton, J. Lee, 2000 .

Device degradation during low temperature ECR-CVD. Part II: GaAs/AlGaAs HBTs

C. R. Abernathy, F. Ren, S. Pearton, 1998 .

Understanding of etch mechanism and etch depth distribution in inductively coupled plasma etching of GaAs

F. Ren, S. Pearton, J. Lee, 2001 .

Low damage dry etching of III–V compound semiconductors using electron cyclotron resonance discharges

Stephen J. Pearton, W. S. Hobson, D. D. Johnson, 1991 .

Reduction of dry etch damage to GaAs using pulse-time modulated plasmas

F. Ren, S. Pearton, H. T. Wang, 2007 .

Parametric Study of NiFe and NiFeCo High Density Plasma Etching Using CO / NH 3

J. Childress, D. Johnson, S. Onishi, 1999 .

Advanced selective dry etching of GaAs/AlGaAs in high density inductively coupled plasmas

Stephen J. Pearton, D. D. Johnson, Mike Devre, 2000 .

Low Temperature Silicon Nitride and Silicon Dioxide Film Processing by Inductively Coupled Plasma Chemical Vapor Deposition

Stephen J. Pearton, D. D. Johnson, J. W. Lee, 2000 .

Development of advanced plasma process with an optical emission spectroscopy-based end-point technique for etching of AlGaAs over GaAs in manufacture of heterojunction bipolar transistors

S. Pearton, J. Lee, M. Jeon, 2002 .

Comparison of the effects of H2 and D2 plasma exposure on GaAs MESFETs

F. Ren, S. Pearton, C. S. Wu, 2001 .

Comparison of the effects of H2 and D2 plasma exposure on AlGaAs/GaAs high electron mobility transistors

F. Ren, R. Kopf, D. Johnson, 2001 .

High selectivity Inductively Coupled Plasma etching of GaAs over InGaP

L. C. Meyer, F. Ren, S. Pearton, 2000 .

Plasma etching of III–V semiconductors in CH4/H2/Ar electron cyclotron resonance discharges

S. J. Pearton, W. S. Hobson, D. D. Johnson, 1990 .

Effect of high density H2 plasmas on InGaP/GaAs and AlGaAs/GaAs HEMTs

R. F. Kopf, J. M. Kuo, S. J. Pearton, 1998 .

Development of Low Temperature Silicon Nitride and Silicon Dioxide Films by Inductively-Coupled Plasma Chemical Vapor Deposition

F. Ren, S. Pearton, J. Lee, 1999 .