A. Arehart

发表

Impact of moisture ingress on the degradation and trap spectrum in Cu(In,Ga)Se2 solar cells

P. Paul, S. Karki, G. Rajan, 2018, 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC).

A . 1 Assessment of Distributed-Cycling Schemes on 45 nm NOR Flash Memory Arrays

S. Ringel, U. Mishra, J. Speck, 2012 .

Capture Kinetics of Electron Traps in MBE‐Grown n‐GaN

Steven A. Ringel, James S. Speck, Umesh K. Mishra, 2001 .

$\beta$ -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz

S. Lodha, S. Ringel, S. Rajan, 2019, IEEE Electron Device Letters.

Toward a physical understanding of the reliability-limiting EC-0.57 eV trap in GaN HEMTs

S. Keller, U. K. Mishra, D. W. Cardwell, 2014, 2014 IEEE International Reliability Physics Symposium.

Epitaxial growth of large area single-crystalline few-layer MoS 2 with high space charge mobility of 192 cm 2 V − 1 s − 1

Mingzhe Yu, Yiying Wu, S. Rajan, 2014 .

Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor

Steven A. Ringel, Christiane Poblenz, James S. Speck, 2012 .

Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices

S. Ringel, S. Rajan, Hyunsoo Lee, 2020 .

Identification of Carbon-related Bandgap States in GaN Grown by MOCVD

S. Denbaars, S. Ringel, U. Mishra, 2003 .

Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition

X. Liu, S. Ringel, S. Keller, 2016 .

Mechanism of Si doping in plasma assisted MBE growth of β-Ga2O3

S. Ringel, S. Rajan, S. Krishnamoorthy, 2019, Applied Physics Letters.

Local trap spectroscopy on cross-sectioned AlGaN/GaN devices with in situ biasing

S. Ringel, A. Arehart, E. Heller, 2019, Applied Physics Letters.

Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN

peixiong zhao, E. Zhang, D. Fleetwood, 2015 .

Impact of Traps on the Adjacent Channel Power Ratios of GaN HEMTs

A. Arehart, J. Jimenez, W. Sun, 2020, IEEE Electron Device Letters.

S. Ringel, U. Mishra, J. Speck, 2004 .

Impact of growth pressure on defects in GaN grown by metalorganic chemical vapor deposition

S. Denbaars, S. Ringel, U. Mishra, 2003, 2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767).

Defect-mediated metastability and carrier lifetimes in polycrystalline (Ag,Cu)(In,Ga)Se2 absorber materials

R. Farshchi, D. Kuciauskas, P. Paul, 2020 .

Analysis of Recombination Mechanisms in RbF-Treated CIGS Solar Cells

A. Rockett, F. Castellano, P. Paul, 2019, IEEE Journal of Photovoltaics.

Characterization of Electronic Defects in RbF treated CIGS Solar cells

A. Rockett, P. Paul, S. Karki, 2018, 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC).

Investigation of traps density and position in alkali treated Cu(In,Ga)Se2 thin films and solar cells

A. Rockett, S. Ringel, P. Paul, 2017 .

Impact of the Ga/In ratio on defects in Cu(In, Ga)Se2

S. Ringel, P. Paul, S. Marsillac, 2016, 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC).

Impact of Surface Treatment on Interface States of ALD Al2O3/GaN Interfaces

S. Ringel, J. Speck, T. Grassman, 2017 .

Effect of threading dislocation density on Ni∕n-GaN Schottky diode I-V characteristics

S. Denbaars, S. Ringel, U. Mishra, 2006 .

Characterization of traps in InAlN by optically and thermally stimulated deep level defect spectroscopies

S. Ringel, J. Speck, E. Farzana, 2018, Journal of Applied Physics.

Deep level traps in semi‐polar n‐GaN grown on patterned sapphire substrate by metalorganic vapor phase epitaxy

E. Fitzgerald, S. Ringel, P. Vennégués, 2016 .

Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition

S. Ringel, E. Farzana, Hongping Zhao, 2020 .

Deep levels in a-plane, high Mg-content MgxZn1−xO epitaxial layers grown by molecular beam epitaxy

S. Ringel, J. Chauveau, A. Hierro, 2012 .

Epitaxial Growth of Large Area Single-Crystalline Few-Layer MoS2 with Room Temperature Mobility of 192 cm2V-1s-1

Yiying Wu, S. Rajan, A. Arehart, 2014, 1405.2479.

Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field

S. Ringel, S. Rajan, A. Arehart, 2019, Applied Physics Letters.

Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor β−Ga2O3

Jared M. Johnson, D. Muller, C. Walle, 2019, Physical Review X.

Nanoscale Detection of Deep Levels in CIGS using Electron Energy Loss Spectroscopy

T. Grassman, D. McComb, P. Paul, 2017 .

Direct Nanoscale Characterization of Deep Levels in AgCuInGaSe2 Using Electron Energy‐Loss Spectroscopy in the Scanning Transmission Electron Microscope

R. Farshchi, T. Grassman, D. McComb, 2019, Advanced Energy Materials.

Layer-transferred MoS2/GaN PN diodes

Yiying Wu, W. McCulloch, S. Rajan, 2015, 1505.05196.

Growth and electrical characterization of two-dimensional layered MoS2/SiC heterojunctions

Yiying Wu, S. Rajan, A. Arehart, 2014 .

Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy

S. Ringel, E. Farzana, A. Arehart, 2016 .

Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor

Jared M. Johnson, S. Lodha, S. Rajan, 2017, 1706.09492.

Access-Region Defect Spectroscopy of DC-Stressed N-Polar GaN MIS-HEMTs

S. Kolluri, S. P. DenBaars, U. K. Mishra, 2012, IEEE Electron Device Letters.

Investigation of trapping effects on AlGaN/GaN HEMT under DC accelerated life testing

S. Ringel, P. Saunier, A. Arehart, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

Correlative Defect Characterization in Semiconductors via Electron Channeling Contrast Imaging and Scanning Deep Level Transient Spectroscopy

S. Ringel, T. Grassman, A. Arehart, 2018, Microscopy and Microanalysis.

Spatial correlation of the EC-0.57 eV trap state with edge dislocations in epitaxial n-type gallium nitride

S. Ringel, J. Speck, T. Grassman, 2018, Journal of Applied Physics.

Investigation of Trap-Induced Threshold Voltage Instability in GaN-on-Si MISHEMTs

S. Ringel, S. Krishnan, S. Pendharkar, 2019, IEEE Transactions on Electron Devices.

Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3

S. Ringel, S. Rajan, S. Krishnamoorthy, 2019, 1908.01101.

Influence of growth temperature on defect states throughout the bandgap of MOCVD-grown β-Ga2O3

S. Ringel, Hongping Zhao, A. Arehart, 2020 .

Breakdown Characteristics of $\beta$ -(Al0.22Ga0.78)2O3/Ga2O3 Field-Plated Modulation-Doped Field-Effect Transistors

S. Lodha, S. Ringel, S. Rajan, 2019, IEEE Electron Device Letters.

Effect of buffer iron doping on delta-doped β-Ga2O3 metal semiconductor field effect transistors

S. Lodha, S. Ringel, S. Rajan, 2018, Applied Physics Letters.

Electrical Properties 3

S. Ringel, A. Arehart, 2020 .

Identification of critical buffer traps in Si δ-doped β-Ga2O3 MESFETs

S. Lodha, S. Ringel, S. Rajan, 2019, Applied Physics Letters.

Electrostatic Engineering Using Extreme Permittivity Materials for Ultra-Wide Bandgap Semiconductor Transistors

S. Ringel, S. Rajan, Hongping Zhao, 2020, IEEE Transactions on Electron Devices.

Fast C-V method to mitigate effects of deep levels in CIGS doping profiles

P. Paul, A. Arehart, G. Zapalac, 2017, 1706.09946.

Large-area SnSe2/GaN heterojunction diodes grown by molecular beam epitaxy

S. Rajan, S. Krishnamoorthy, M. Brenner, 2017 .

Comparison of deep level incorporation in ammonia and rf‐plasma assisted molecular beam epitaxy n‐GaN films

Steven A. Ringel, Christiane Poblenz, James S. Speck, 2008 .

Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors

Steven A. Ringel, Umesh K. Mishra, Siddharth Rajan, 2013 .

Deep level optical and thermal spectroscopy of traps in n-GaN grown by ammonia molecular beam epitaxy

Steven A. Ringel, Christiane Poblenz, James S. Speck, 2008 .

Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon

Steven A. Ringel, James S. Speck, Daniel S. Green, 2005 .

Deep level traps in GaN LEDs grown by metal organic vapour phase epitaxy on an 8 inch Si(111) substrate

Steven A. Ringel, Soo Jin Chua, Eugene A. Fitzgerald, 2016 .

Separation of bulk and surface electron transport in metamorphic InAs layers using quantitative mobility spectrum analysis

Andrew M. Carlin, S. Ringel, A. Arehart, 2008 .

Investigations of metamorphic (Al)GaInP for III–V multijunction photovoltaics

S. Ringel, T. Grassman, P. Paul, 2015, 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC).

Correlation of a generation-recombination center with a deep level trap in GaN

E. Fitzgerald, S. Chua, S. Ringel, 2015 .

Electrical characterization of n-type Al0.30Ga0.70N Schottky diodes

Steven A. Ringel, A. A. Allerman, Aaron R. Arehart, 2011 .

Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy

Steven A. Ringel, James S. Speck, Umesh K. Mishra, 2002 .

Growth and electrical characterization of two-dimensional layered MoS2/SiC heterojunctions

Yiying Wu, S. Rajan, A. Arehart, 2014 .

Deep levels and their impact on generation current in Sn-doped InGaAsN

Steven A. Ringel, Andrew A. Allerman, R. M. Sieg, 2001 .

Impact of proton irradiation on deep level states in n-GaN

En Xia Zhang, Steven A. Ringel, James S. Speck, 2013 .

Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition

Steven A. Ringel, James S. Speck, Umesh K. Mishra, 2004 .

Metalorganic Chemical Vapor Deposition Gallium Nitride with Fast Growth Rate for Vertical Power Device Applications

S. Ringel, Hongping Zhao, A. Arehart, 2021, physica status solidi (a).

Effect of nitrogen plasma power on defect levels in Ni/n-GaN Schottky diodes grown by molecular beam epitaxy

S. Ringel, J. Speck, C. Poblenz, 2010 .

Investigation of electrically active defects in GaN, AlGaN, and AlGaN/GaN high electron mobility transistors

Aaron R. Arehart, A. Arehart, 2009 .

Deep trap-induced dynamic on-resistance degradation in GaN-on-Si power MISHEMTs

W. Sun, Z. Zhang, D. W. Cardwell, 2016, Microelectron. Reliab..

High Al-Content AlGaN Transistor With 0.5 A/mm Current Density and Lateral Breakdown Field Exceeding 3.6 MV/cm

A. Allerman, S. Rajan, W. Lu, 2018, IEEE Electron Device Letters.

Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy

Steven A. Ringel, Umesh K. Mishra, S. P. DenBaars, 2013 .

Next generation defect characterization in nitride HEMTs

Steven A. Ringel, Christiane Poblenz, James S. Speck, 2011 .

Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy

En Xia Zhang, Steven A. Ringel, James S. Speck, 2015 .

β-Gallium oxide power electronics

O. Bierwagen, V. Mehrotra, S. Ringel, 2022, APL Materials.

Degradation Mechanism in Cu(In,Ga)Se2 Material and Solar Cells Due to Moisture and Heat Treatment of the Absorber Layer

A. Rockett, F. Castellano, T. Grassman, 2019, IEEE Journal of Photovoltaics.

Identifying the source of reduced performance in 1-stage-grown Cu(In, Ga)Se2 solar cells

S. Ringel, T. Grassman, P. Paul, 2016, 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC).

Direct nm-scale spatial mapping of traps in CIGS

S. Ringel, T. Grassman, P. Paul, 2015, 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC).

Direct nm-Scale Spatial Mapping of Traps in CIGS

S. Ringel, T. Grassman, P. Paul, 2015, IEEE Journal of Photovoltaics.

Identifying the source of reduced performance in 1-stage-grown Cu(In,Ga)Se2 solar cells

S. Ringel, T. Grassman, P. Paul, 2017, 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).

Evaluation of Low-Temperature Saturation Velocity in $\beta$ -(AlxGa1–x)2O3/Ga2O3 Modulation-Doped Field-Effect Transistors

S. Ringel, S. Rajan, A. Arehart, 2019, IEEE Transactions on Electron Devices.

Erratum: “Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy” [Appl. Phys. Lett. 108, 052105 (2016)]

S. Ringel, E. Farzana, A. Arehart, 2016 .

Probing charge transport and background doping in MOCVD grown (010) ${\beta}$-Ga$_{2}$O$_{3}$

S. Ringel, S. Rajan, Hongping Zhao, 2020, 2004.13089.

Trapping Effects in Si -Doped -Ga2O3 MESFETs on an Fe-Doped -Ga2O3 Substrate

S. Lodha, S. Ringel, S. Rajan, 2018, IEEE Electron Device Letters.

High electron density β-(Al0.17Ga0.83)2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer

S. Ringel, S. Rajan, A. Arehart, 2020, Journal of Applied Physics.

Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy

Steven A. Ringel, James S. Speck, Esmat Farzana, 2018 .

Direct Determination of Energy Band Alignments of Ni/Al2O3/GaN MOS Structures Using Internal Photoemission Spectroscopy

S. Ringel, J. Speck, A. Arehart, 2014, Journal of Electronic Materials.

Interface trap characterization of atomic layer deposition Al2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies

Steven A. Ringel, James S. Speck, Aaron R. Arehart, 2013 .

A method to determine deep level profiles in highly compensated, wide band gap semiconductors

S. Ringel, A. Arehart, A. Armstrong, 2005 .

Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga2O3

S. Ringel, G. Burns, A. Arehart, 2023, Journal of Applied Physics.

Deep level defects in low-pressure chemical vapor deposition grown (010) β-Ga2O3

S. Ringel, A. Arehart, H. Ghadi, 2022, APL Materials.

Influence of neutron irradiation on deep levels in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy

S. Ringel, J. Speck, E. Farzana, 2019, APL Materials.

Impact of deep level defects induced by high energy neutron radiation in β-Ga2O3

S. Ringel, E. Farzana, A. Arehart, 2019, APL Materials.

Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga2O3

S. Ringel, S. Rajan, Hongping Zhao, 2020, physica status solidi (RRL) – Rapid Research Letters.

Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures

En Xia Zhang, Steven A. Ringel, James S. Speck, 2016 .

In Situ and Ex Situ Investigations of KF Postdeposition Treatment Effects on CIGS Solar Cells

A. Rockett, S. Ringel, R. Collins, 2017, IEEE Journal of Photovoltaics.

Interface trap evaluation of Pd/Al2O3/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen

Steven A. Ringel, Yoshio Nishi, T. P. Ma, 2013 .

Spatially-discriminating trap characterization methods for HEMTs and their application to RF-stressed AlGaN/GaN HEMTs

S. A. Ringel, B. Winningham, S. Ringel, 2010, 2010 International Electron Devices Meeting.

Influence of metal choice on (010) β-Ga2O3 Schottky diode properties

Steven A. Ringel, Esmat Farzana, Pran K. Paul, 2017 .

Large‐Area (Ag,Cu)(In,Ga)Se2 Thin‐Film Solar Cells with Increased Bandgap and Reduced Voltage Losses Realized with Bulk Defect Reduction and Front‐Grading of the Absorber Bandgap

A. Rockett, R. Farshchi, D. Kuciauskas, 2022, Solar RRL.

Velocity saturation in La-doped BaSnO3 thin films

A. Janotti, S. Stemmer, S. Ringel, 2019, Applied Physics Letters.

Deep traps in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy

Steven A. Ringel, James S. Speck, Z. Zhang, 2012 .

Influence of V/III growth flux ratio on trap states in m-plane GaN grown by ammonia-based molecular beam epitaxy

S. Ringel, J. Speck, A. Arehart, 2012 .

Effects of Applied Bias and High Field Stress on the Radiation Response of GaN/AlGaN HEMTs

En Xia Zhang, Rong Jiang, Steven A. Ringel, 2015, IEEE Transactions on Nuclear Science.

Additive phase noise measurements of AlGaN/GaN HEMTs using a large signal network analyzer and a tunable monochromatic light source

Patrick Roblin, Andrew Malonis, Christiane Poblenz, 2009, 2009 74th ARFTG Microwave Measurement Conference.

High-Field Stress, Low-Frequency Noise, and Long-Term Reliability of AlGaN/GaN HEMTs

En Xia Zhang, Steven A. Ringel, James S. Speck, 2016, IEEE transactions on device and materials reliability.

Bandgap Dependence of Near-Conduction Band State in $(\text{Ag}_{\mathrm{y}}\text{Cu}_{1-\mathrm{y}})(\text{In}_{\mathrm{X}}\text{Ga}_{1-\mathrm{x}})\text{Se}_{2}$ Solar Cells

R. Farshchi, S. Paetel, D. Kuciauskas, 2022, 2022 IEEE 49th Photovoltaics Specialists Conference (PVSC).

Defects in RbF - Treated Cu(InxGal-x)Se2 Solar Cells and Their Impact on Voc

S. Paetel, D. Kuciauskas, Alexandra M. Bothwell, 2023, 2023 IEEE 50th Photovoltaic Specialists Conference (PVSC).

Optical Characterization of Defects in High-efficiency (Ag,Cu)(In,Ga)Se2

R. Farshchi, D. Kuciauskas, A. Arehart, 2020, 2020 47th IEEE Photovoltaic Specialists Conference (PVSC).

Spatially-resolved spectroscopic measurements of Ec − 0.57 eV traps in AlGaN/GaN high electron mobility transistors

Steven A. Ringel, James S. Speck, Umesh K. Mishra, 2013 .

Nanoscale Electronic Structure Characterization in CIGS with Electron Energy-Loss Spectroscopy

T. Grassman, D. McComb, P. Paul, 2018, 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC).