M. Yamanaka

发表

Fabrication of 0.9 eV bandgap a-Si/c-Si1−xGex heterojunction solar cells

K. Matsubara, H. Kawanami, R. Oshima, 2014, 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC).

Stress as a governing parameter to control the crystallization of amorphous silicon films by thermal annealing

E. Suzuki, M. Yamanaka, I. Sakata, 2002 .

Deep defect states in hydrogenated amorphous silicon studied by a constant photocurrent method

Y. Hayashi, M. Yamanaka, I. Sakata, 1992 .

Band Lineup at the Interface between Boron-Doped P-Type Hydrogenated Amorphous Silicon and Crystalline Silicon Studied by Internal Photoemission

M. Yamanaka, I. Sakata, R. Shimokawa, 2004 .

Relationship between carrier diffusion lengths and defect density in hydrogenated amorphous silicon

T. Sekigawa, M. Yamanaka, I. Sakata, 1997 .

Very Low Temperature Epitaxial Growth of Silicon Films for Solar Cells

M. Yamanaka, I. Sakata, R. Shimokawa, 2007 .

Effects of Optical Confinement in Textured Antireflection Coating using ZnO Films for Solar Cells

Yutaka Hayashi, Hideyuki Tsuboi, Y. Hayashi, 1992 .

Optical and electrical properties of hydrogenated amorphous silicon prepared by glow discharge decomposition of disilane

Y. Hayashi, M. Yamanaka, I. Sakata, 1984 .

Photo-induced effects in hydrogenated amorphous silicon P-I-N diodes

Y. Hayashi, M. Yamanaka, I. Sakata, 1982 .

MBE growth of crystalline SiGe thin films for solar cell applications with precisely controlled heterojunction

Zhengxin Liu, H. Kawanami, M. Yamanaka, 2011, 2011 37th IEEE Photovoltaic Specialists Conference.

Characterization of heterojunctions in crystalline-silicon-based solar cells by internal photoemission

H. Kawanami, M. Yamanaka, I. Sakata, 2009 .

Low-Temperature Back-Surface-Field Structures Applied to Crystalline Silicon Solar Cells: Two-Step Growth with Hydrogen Plasma Treatment for Improving the Reproducibility

H. Kawanami, H. Takato, M. Yamanaka, 2012 .

Properties of plasma‐deposited hydrogenated amorphous silicon prepared under visible light illumination

Y. Hayashi, M. Yamanaka, I. Sakata, 1990 .

Observation of field quenching of photo-induced effects in hydrogenated amorphous silicon

Y. Hayashi, M. Yamanaka, I. Sakata, 1983 .

Formation of nanocrystallites governed by the initial stress in the ultrathin hydrogenated amorphous silicon films

E. Suzuki, M. Yamanaka, I. Sakata, 2001 .

High efficiency a-Si:H p-i-n solar cell using a SnO2/glass substrate

Y. Hayashi, M. Yamanaka, H. Karasawa, 1982, IEEE Electron Device Letters.

A new characterization parameter for hydrogenated amorphous silicon: B (the square of the gradient of the (αh/ω)1/2 versus h/ω plot)

Y. Hayashi, M. Yamanaka, I. Sakata, 1981 .

Relationship between optical and structural properties of hydrogenated amorphous silicon

Yutaka Hayashi, Y. Hayashi, M. Yamanaka, 1989 .

Raman Scattering Studies on Hydrogenated Amorphous Silicon Prepared under High Deposition Rate Conditions

Y. Hayashi, M. Yamanaka, I. Sakata, 1985 .

Highly Sensitive Etchants for Delineation of Defects in Single‐ and Polycrystalline Silicon Materials

M. Yamanaka, R. Shimokawa, Y. Kashiwagi, 1996 .

Electrical characteristics of amorphous Si:H/crystalline Si0.3Ge0.7 heterojunction solar cells grown on compositionally graded buffer layers

K. Matsubara, H. Kawanami, T. Sugaya, 2015 .

Fabrication of hydrogenated amorphous Si/crystalline Si1−xGex (x ≤ 0.84) heterojunction solar cells grown by solid source molecular beam epitaxy

K. Matsubara, H. Kawanami, T. Sugaya, 2014 .

Fine crystalline grain model for the determination of the morphology of ultrathin amorphous silicon films

E. Suzuki, M. Yamanaka, I. Sakata, 2002 .

Spectroscopic Ellipsometry for the Characterization of the Morphology of Ultra-thin Thermal CVD Amorphous and Nanocrystalline Silicon Thin Films

E. Suzuki, Hirohisa Taguchi, M. Yamanaka, 2000 .

Effects of visible light illumination during plasma enhanced chemical vapor deposition growth on the film properties of hydrogenated amorphous silicon

M. Yamanaka, I. Sakata, 2002 .

Efficiency of the a-Si:H solar cell and grain size of SnO2transparent conductive film

Y. Hayashi, H. Karasawa, Y. Hayashi, 1983, IEEE Electron Device Letters.

Evolution of an amorphous silicon network from silicon paracrystallites studied by spectroscopic ellipsometry

E. Suzuki, M. Yamanaka, I. Sakata, 2004 .

Single electron memory characteristic of silicon nanodot nanowire transistor

Hiroshi Hiroshima, Kenichi Ishii, Toshiyuki Tsutsumi, 2000 .

Effects of oxygen impurity on the energy distribution of gap states in hydrogenated amorphous silicon studied by post-transit photocurrent spectroscopy

M. Yamanaka, I. Sakata, T. Kamei, 2007 .

Energy distribution of gap states in hydrogenated amorphous silicon by post-transit photocurrent spectroscopy: Validity of an indium-tin oxide/silicon oxide double-layer gate

M. Yamanaka, I. Sakata, 2005 .

Sb-Doped SnO2 films deposited by the CMD (chemical mist deposition) method

Y. Hayashi, M. Yamanaka, H. Iida, 1988 .

ELECTRICAL PROPERTIES OF SI NANOCRYSTALS EMBEDDED IN AN ULTRATHIN OXIDE

E. Suzuki, K. Ishii, M. Yamanaka, 1999 .

Post-transit photocurrent spectroscopy studies on the gap state distribution in hydrogenated amorphous silicon: Trap occupation problems in leaky junctions and high-defect-density samples

M. Yamanaka, I. Sakata, 2003 .

High-quality SiGe films grown with compositionally graded buffer layers for solar cell applications

K. Matsubara, H. Kawanami, R. Oshima, 2013 .

Back-Surface-Field Effects at the Heterojunctions between Boron-Doped p-Type Hydrogenated Amorphous Silicon and Crystalline Silicon in Thin-Film Crystalline Silicon Solar Cells

M. Yamanaka, I. Sakata, R. Shimokawa, 2005 .

Characterization of hydrogenated amorphous silicon by capacitance‐voltage and surface photovoltage measurements using liquid Schottky barriers

Yutaka Hayashi, Y. Hayashi, T. Saitoh, 1987 .

Light-induced annealing of hole trap states: A new aspect of light-induced changes in hydrogenated amorphous silicon

M. Yamanaka, I. Sakata, T. Kamei, 2012 .

Fabrication technology of a Si nanowire memory transistor using an inorganic electron beam resist process

E. Suzuki, K. Ishii, Hirohisa Taguchi, 2000 .

Properties of Si nanowire devices fabricated by using an inorganic EB resist process

Hiroshi Hiroshima, Kenichi Ishii, Toshiyuki Tsutsumi, 2000 .

Reduced nonradiative recombination rates in c-plane Al0.83In0.17N films grown on a nearly lattice-matched GaN substrate by metalorganic vapor phase epitaxy

A. Uedono, T. Egawa, S. Ishibashi, 2021, Applied Physics Letters.