I. Sakata

发表

Fabrication of 0.9 eV bandgap a-Si/c-Si1−xGex heterojunction solar cells

K. Matsubara, H. Kawanami, R. Oshima, 2014, 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC).

Strain-compensated Ge/Si1−xCx quantum dots with Si mediating layers grown by molecular beam epitaxy

M. Kondo, K. Matsubara, T. Sugaya, 2015 .

Effect of deposition rate on the characteristics of Ge quantum dots on Si (001) substrates

M. Kondo, K. Matsubara, T. Sugaya, 2014 .

Optical and structural studies of highly uniform Ge quantum dots on Si (001) substrate grown by solid-source molecular beam epitaxy

M. Kondo, K. Matsubara, T. Sugaya, 2013 .

Stress as a governing parameter to control the crystallization of amorphous silicon films by thermal annealing

E. Suzuki, M. Yamanaka, I. Sakata, 2002 .

Deep defect states in hydrogenated amorphous silicon studied by a constant photocurrent method

Y. Hayashi, M. Yamanaka, I. Sakata, 1992 .

Theoretical analysis on the limitations of the open-circuit voltage of a hydrogenated amorphous silicon p-i-n solar cell

Y. Hayashi, I. Sakata, 1986 .

Real-time monitoring of surface passivation of crystalline silicon during growth of amorphous and epitaxial silicon layer

K. Koga, M. Shiratani, S. Nunomura, 2020 .

Band Lineup at the Interface between Boron-Doped P-Type Hydrogenated Amorphous Silicon and Crystalline Silicon Studied by Internal Photoemission

M. Yamanaka, I. Sakata, R. Shimokawa, 2004 .

Hydrogen-induced defects in crystalline silicon during growth of an ultrathin a-Si:H layer

K. Matsubara, S. Nunomura, I. Sakata, 2020, Japanese Journal of Applied Physics.

Relationship between carrier diffusion lengths and defect density in hydrogenated amorphous silicon

T. Sekigawa, M. Yamanaka, I. Sakata, 1997 .

Properties of hydrogenated amorphous silicon prepared by alternatively repeating chemical-vapor deposition from disilane and hydrogen plasma treatment

Y. Hayashi, I. Sakata, M. Yamanaka, 1993 .

Very Low Temperature Epitaxial Growth of Silicon Films for Solar Cells

M. Yamanaka, I. Sakata, R. Shimokawa, 2007 .

Optical and electrical properties of hydrogenated amorphous silicon prepared by glow discharge decomposition of disilane

Y. Hayashi, M. Yamanaka, I. Sakata, 1984 .

Photo-induced effects in hydrogenated amorphous silicon P-I-N diodes

Y. Hayashi, M. Yamanaka, I. Sakata, 1982 .

Modified Triode Plasma Configuration Allowing Precise Control of Ion-Energy for Preparing High Mobility a-Si:H

A. Matsuda, I. Sakata, G. Ganguly, 1996 .

Light-induced hydrogen evolution from hydrogenated amorphous silicon: Hydrogen diffusion by formation of bond centered hydrogen

I. Sakata, M. Yamanaka, H. Mizubayashi, 2014 .

Internal quantum efficiency mapping for evaluation of rear surface of passivated emitter and rear cell

H. Takato, T. Mochizuki, I. Sakata, 2018, Applied Physics Express.

MBE growth of crystalline SiGe thin films for solar cell applications with precisely controlled heterojunction

Zhengxin Liu, H. Kawanami, M. Yamanaka, 2011, 2011 37th IEEE Photovoltaic Specialists Conference.

Open-Circuit Voltage Decay (OCVD) Measurement Applied to Hydrogenated Amorphous Silicon Solar Cells

Y. Hayashi, I. Sakata, 1990 .

Validity of quasi-static capacitance-voltage measurements applied to hydrogenated amorphous silicon diodes

Y. Hayashi, I. Sakata, S. Okazaki, 1986 .

Effects of the low temperature grown buffer layer thickness on the growth of GaAs on Si by MBE

H. Kawanami, K. Baskar, I. Sakata, 2003 .

Si Surface Preparation with Si Beam Irradiation on the Growth of III-V on Si

T. Sekigawa, H. Kawanami, K. Baskar, 1997 .

Characterization of heterojunctions in crystalline-silicon-based solar cells by internal photoemission

H. Kawanami, M. Yamanaka, I. Sakata, 2009 .

Band Discontinuities in Gallium Phosphide/Crystalline Silicon Heterojunctions Studied by Internal Photoemission

H. Kawanami, I. Sakata, 2008 .

Ion bombardment-induced defect reduction at a-Si:H/c-Si interfaces: possible microstructural changes and mobile hydrogen roles

S. Nunomura, I. Sakata, 2022, Japanese Journal of Applied Physics.

Ion-induced interface defects in a-Si:H/c-Si heterojunction: possible roles and kinetics of hot mobile hydrogens

M. Hori, S. Nunomura, I. Sakata, 2022, Japanese Journal of Applied Physics.

Low-Temperature Back-Surface-Field Structures Applied to Crystalline Silicon Solar Cells: Two-Step Growth with Hydrogen Plasma Treatment for Improving the Reproducibility

H. Kawanami, H. Takato, M. Yamanaka, 2012 .

Properties of plasma‐deposited hydrogenated amorphous silicon prepared under visible light illumination

Y. Hayashi, M. Yamanaka, I. Sakata, 1990 .

Dependence of photoinduced changes in photovoltaic and dark electrical properties of hydrogenated amorphous silicon diodes on changes in the film properties of hydrogenated amorphous silicon

Y. Hayashi, I. Sakata, 1985, IEEE Transactions on Electron Devices.

Observation of field quenching of photo-induced effects in hydrogenated amorphous silicon

Y. Hayashi, M. Yamanaka, I. Sakata, 1983 .

Oxygen-atmosphere heat treatment in spin-on doping process for improving the performance of crystalline silicon solar cells

Zhengxin Liu, H. Takato, I. Sakata, 2010 .

Formation of nanocrystallites governed by the initial stress in the ultrathin hydrogenated amorphous silicon films

E. Suzuki, M. Yamanaka, I. Sakata, 2001 .

Initial Buffer Layers on the Growth of InGaP on Si by MBE

T. Sekigawa, H. Kawanami, I. Sakata, 1996 .

Absence of Correlation between Disorder and Defect Density in Hydrogenated Amorphous Silicon

I. Sakata, G. Ganguly, H. Okushi, 1995 .

Relationship between Carrier Diffusion Length and Light-Induced Defects in Hydrogenated Amorphous Silicon

I. Sakata, Mitsuyuki Yamanaka Mitsuyuki Yamanaka, Toshihiro Sekigawa Toshihiro Sekigawa, 1994 .

Ambient stability of wet chemically passivated germanium wafer for crystalline solar cells

Zhengxin Liu, H. Takato, I. Sakata, 2011 .

Characterization of polycrystalline silicon wafers for solar cells sliced with novel fixed‐abrasive wire

Y. Kondo, H. Takato, I. Sakata, 2010 .

Light-induced anelastic change in a-Si(H)

I. Sakata, M. Yamanaka, H. Kasai, 2006 .

Mechanical Spectroscopy Study on the Light Soaking Effect on Hydrogenated Amorphous Silicon

I. Sakata, H. Mizubayashi, H. Tanimoto, 2012 .

Impact of band tail distribution on carrier trapping in hydrogenated amorphous silicon for solar cell applications

K. Matsubara, S. Nunomura, I. Sakata, 2016 .

In-situ characterization of trapped charges in amorphous semiconductor films during plasma-enhanced chemical vapor deposition

S. Nunomura, I. Sakata, 2014 .

Theoretical analysis of trapping and recombination of photogenerated carriers in amorphous silicon solar cells

Y. Hayashi, Y. Hayashi, I. Sakata, 1985 .

A new characterization parameter for hydrogenated amorphous silicon: B (the square of the gradient of the (αh/ω)1/2 versus h/ω plot)

Y. Hayashi, M. Yamanaka, I. Sakata, 1981 .

Relationship between optical and structural properties of hydrogenated amorphous silicon

Yutaka Hayashi, Y. Hayashi, M. Yamanaka, 1989 .

Electronic properties of ultrathin hydrogenated amorphous silicon

K. Matsubara, S. Nunomura, I. Sakata, 2017 .

In situ Photocurrent Measurements of Thin-Film Semiconductors during Plasma-Enhanced Chemical Vapor Deposition

M. Kondo, S. Nunomura, I. Sakata, 2013 .

Raman Scattering Studies on Hydrogenated Amorphous Silicon Prepared under High Deposition Rate Conditions

Y. Hayashi, M. Yamanaka, I. Sakata, 1985 .

Electrical characteristics of amorphous Si:H/crystalline Si0.3Ge0.7 heterojunction solar cells grown on compositionally graded buffer layers

K. Matsubara, H. Kawanami, T. Sugaya, 2015 .

Fabrication of hydrogenated amorphous Si/crystalline Si1−xGex (x ≤ 0.84) heterojunction solar cells grown by solid source molecular beam epitaxy

K. Matsubara, H. Kawanami, T. Sugaya, 2014 .

Fine crystalline grain model for the determination of the morphology of ultrathin amorphous silicon films

E. Suzuki, M. Yamanaka, I. Sakata, 2002 .

Spectroscopic Ellipsometry for the Characterization of the Morphology of Ultra-thin Thermal CVD Amorphous and Nanocrystalline Silicon Thin Films

E. Suzuki, Hirohisa Taguchi, M. Yamanaka, 2000 .

Effects of visible light illumination during plasma enhanced chemical vapor deposition growth on the film properties of hydrogenated amorphous silicon

M. Yamanaka, I. Sakata, 2002 .

Evolution of an amorphous silicon network from silicon paracrystallites studied by spectroscopic ellipsometry

E. Suzuki, M. Yamanaka, I. Sakata, 2004 .

Capturing by self-assembled block copolymer thin films: transfer printing of metal nanostructures on textured surfaces.

K. Matsubara, H. Mizuno, T. Kaneko, 2014, Chemical communications.

Passivation of Germanium Surfaces by a Quinhydrone–Methanol Solution Treatment

H. Takato, I. Sakata, B. Swain, 2011 .

Wet Chemical Surface Passivation of Germanium Wafers by Quinhydrone–Methanol Treatment for Minority Carrier Lifetime Measurements

H. Takato, I. Sakata, B. Swain, 2009 .

Hot hole effect on surface-state density and minority-carrier generation rates in Si-MOS diodes measured by DLTS

T. Ikoma, I. Sakata, T. Katsube, 1980, IEEE Transactions on Electron Devices.

Stimulated resonance Raman scattering from dye-doped polymer waveguides

H. Yanagi, I. Sakata, Shuhei Fujimoto, 2006 .

Single electron memory characteristic of silicon nanodot nanowire transistor

Hiroshi Hiroshima, Kenichi Ishii, Toshiyuki Tsutsumi, 2000 .

Formation of electronic defects in crystalline silicon during hydrogen plasma treatment

K. Matsubara, S. Nunomura, I. Sakata, 2019, AIP Advances.

Effects of oxygen impurity on the energy distribution of gap states in hydrogenated amorphous silicon studied by post-transit photocurrent spectroscopy

M. Yamanaka, I. Sakata, T. Kamei, 2007 .

Changes in photovoltaic and dark electrical properties of hydrogenated amorphous silicon diodes induced by forward bias carrier injection

Y. Hayashi, I. Sakata, 1982 .

Energy distribution of gap states in hydrogenated amorphous silicon by post-transit photocurrent spectroscopy: Validity of an indium-tin oxide/silicon oxide double-layer gate

M. Yamanaka, I. Sakata, 2005 .

Passivating antireflection coating of crystalline silicon using i/n a-Si:H/SiN trilayer

M. Shiratani, N. Itagaki, M. Lozac’h, 2021 .

ELECTRICAL PROPERTIES OF SI NANOCRYSTALS EMBEDDED IN AN ULTRATHIN OXIDE

E. Suzuki, K. Ishii, M. Yamanaka, 1999 .

Post-transit photocurrent spectroscopy studies on the gap state distribution in hydrogenated amorphous silicon: Trap occupation problems in leaky junctions and high-defect-density samples

M. Yamanaka, I. Sakata, 2003 .

Simple Analytical Methods for Determining Optical Constants of Thin Films–Their Application to Amorphous Silicon–

Y. Hayashi, I. Sakata, 1981 .

Polarization Dependence of Stimulated Resonance Raman Scattering from a Single Crystal of Biphenyl-Capped Thiophene

S. Hotta, S. Kobayashi, H. Yanagi, 2006 .

Quinhydrone/Methanol Treatment for the Measurement of Carrier Lifetime in Silicon Substrates

H. Takato, I. Sakata, R. Shimokawa, 2002 .

Rutherford backscattering studies of strain-relaxed SiGe films grown on Si substrate with compositionally graded buffer layers

K. Matsubara, R. Oshima, I. Sakata, 2013 .

In-situ detection of interface defects in a-Si:H/c-Si heterojunction during plasma processing

K. Matsubara, S. Nunomura, I. Sakata, 2019, Applied Physics Express.

Time of flight mobility measurements in a-Si:H grown under controlled-energy ion-bombardment

A. Matsuda, I. Sakata, G. Ganguly, 1996 .

Near Infrared Light Amplification in Dye-Doped Polymer Waveguide

K. Oe, H. Yanagi, I. Sakata, 2006 .

High-quality SiGe films grown with compositionally graded buffer layers for solar cell applications

K. Matsubara, H. Kawanami, R. Oshima, 2013 .

Back-Surface-Field Effects at the Heterojunctions between Boron-Doped p-Type Hydrogenated Amorphous Silicon and Crystalline Silicon in Thin-Film Crystalline Silicon Solar Cells

M. Yamanaka, I. Sakata, R. Shimokawa, 2005 .

Surface Passivation Effect of Silicon Substrates due to Quinhydrone/Ethanol Treatment

H. Takato, I. Sakata, R. Shimokawa, 2001 .

Electrical properties of C-doped p-type GaP and GaPN grown by molecular beam epitaxy

Zhengxin Liu, H. Kawanami, I. Sakata, 2010 .

Characterization of hydrogenated amorphous silicon by capacitance‐voltage and surface photovoltage measurements using liquid Schottky barriers

Yutaka Hayashi, Y. Hayashi, T. Saitoh, 1987 .

Light-induced annealing of hole trap states: A new aspect of light-induced changes in hydrogenated amorphous silicon

M. Yamanaka, I. Sakata, T. Kamei, 2012 .

Fabrication technology of a Si nanowire memory transistor using an inorganic electron beam resist process

E. Suzuki, K. Ishii, Hirohisa Taguchi, 2000 .

Properties of Si nanowire devices fabricated by using an inorganic EB resist process

Hiroshi Hiroshima, Kenichi Ishii, Toshiyuki Tsutsumi, 2000 .

Plasma-Induced Electronic Defects: Generation and Annihilation Kinetics in Hydrogenated Amorphous Silicon

K. Matsubara, S. Nunomura, I. Sakata, 2018, Physical Review Applied.

Surface passivation of silicon substrates using quinhydrone/methanol treatment

H. Takato, I. Sakata, R. Shimokawa, 2003, 3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of.

Anomalous Gate Current Oscillation due to Hot Carrier Effect in MOS Diodes

I. Sakata, T. Ikoma, 1978 .

Plasma processing and annealing for defect management at SiO2/Si interface

M. Hori, S. Nunomura, I. Sakata, 2023, Journal of Vacuum Science & Technology B.

Silicon surface passivation with a-Si:H by PECVD: growth temperature effects on defects and band offset

K. Koga, M. Shiratani, K. Kamataki, 2023, Japanese Journal of Applied Physics.