V. Swaaij

发表

The effect of low frequency pulse-shaped substrate bias on the remote plasma deposition of a-Si : H thin films

W. Kessels, W. Kessels, M. V. D. van de Sanden, 2010 .

Influence of transparent conductive oxides on passivation of a-Si:H/c-Si heterojunctions as studied by atomic layer deposited Al-doped ZnO

M. Zeman, D. Deligiannis, W. Kessels, 2014 .

The role of the silyl radical in plasma deposition of microcrystalline silicon

Van de Sanden, V. Swaaij, van Racmm René Swaaij, 2004 .

Importance of defect density near the p-i interface for a-Si:H solar cell performance

Ba Bas Korevaar, Van de Sanden, V. Swaaij, 2001 .

Fast deposition of microcrystalline silicon with an expanding thermal plasma

Ba Bas Korevaar, Van de Sanden, V. Swaaij, 2002 .

Hydrogenated amorphous silicon deposited under accurately controlled ion bombardment using pulse-shaped substrate biasing

M. Zeman, Van de Sanden, M. Wank, 2010 .

On the surface roughness development of hydrogenated amorphous silicon deposited at low growth rates

Van de Sanden, M. Wank, V. Swaaij, 2009 .

New insights in microcrystalline silicon deposition with expanding thermal plasma chemical vapor deposition

Van de Sanden, V. Swaaij, R. Zambrano, 2006 .

Determining the material structure of microcrystalline silicon from Raman spectra

Wmm Erwin Kessels, van de Mcm Richard Sanden, W. Kessels, 2003 .

High-rate deposition of microcrystalline silicon with an expanding thermal plasma

Van de Sanden, V. Swaaij, A. Klaver, 2005 .